2SD1135 Silicon NPN Triple Diffused ADE-208-906 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB859 Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Collector current IC 4 A Collector peak current I C(peak) 8 A 40 W 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –45 to +150 °C Note: 1. Value at TC = 25°C. 2SD1135 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage 80 — — V I C = 50 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.1 mA VCB = 80 V, IE = 0 60 — 200 VCE = 5 V, IC = 1 A*2 hFE2 35 — — VCE = 5 V, IC = 0.1 A*2 Base to emitter voltage VBE — — 1.5 V VCE = 5 V, IC = 1 A*2 Collector to emitter saturation voltage VCE(sat) — — 2 V I C = 2 A, IB = 0.2 A*2 Gain bandwidth product fT — 10 — MHz VCE = 5 V, IC = 0.5 A*2 Collector output capacitance Cob — 40 — pF VCB = 20 V, IE = 0, f = 1 MHz DC current transfer ratio hFE1* 1 Notes: 1. The 2SD1135 is grouped by h FE1 as follows. 2. Pulse test. B C 60 to 120 100 to 200 Maximum Collector Dissipation Curve Area of Safe Operation 5 Collector current IC (A) Collector power dissipation Pc (W) 60 40 20 (10 V, 4 A) IC max (Continuous) D (33 V, 1.2 A) 2 (T C O C p = er 25 at 1.0 °C ion ) 0.5 0.2 0.1 (80 V, 0.06 A) 0.05 0 2 50 100 Case temperature TC (°C) 150 1 2 5 10 20 50 100 Collector to emitter voltage VCE (V) 2SD1135 Typical Output Characteristics PC = 40 W 4 160 140 100 80 60 3 40 2 20 mA 1 0.3 0.1 0.01 2 4 6 8 10 Collector to emitter voltage VCE (V) 1,000 300 100 TC = 75°C 25 –25 VCE = 5 V 30 10 3 1 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) 10 Collector to emitter saturation voltage VCE (sat) (V) 0 DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE VCE = 5 V 1.0 0.03 IB = 0 0 3 TC = 75°C 25 –25 TC = 25°C Typical Transfer Characteristics 10 Collector current IC (A) Collector current IC (A) 5 0.2 0.4 0.6 0.8 1.0 1.2 Base to emitter voltage VBE (V) 1.4 Collector to Emitter Saturation Voltage vs. Collector Current 10 3 1.0 IC = 10 IB TC = 75°C 0.3 0.1 –25 0.03 25 0.01 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) 10 3 2SD1135 Package Dimensions Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 φ 3.6 -0.08 +0.1 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 MAX 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 MAX 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 4 TO-220AB Conforms Conforms 1.8 g 2SD1135 Cautions 1. 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