2SB1688 Silicon PNP Epitaxial High voltage amplifier ADE-208-975A (Z) 2nd. Edition Mar. 2001 Features • High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB1688 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO -300 V Collector to emitter voltage VCEO -300 V Emitter to base voltage VEBO -5 V Collector current IC -50 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector cutoff current I CBO — — -0.1 µA VCB = -300V, IE = 0 I CEO — — -0.1 µA VCE = -300V, RBE =∞ Emitter cutoff current I EBO — — -10 µA VEB = -5 V, IC = 0 Base to emitter voltage VBE — — -0.75 V VCE = -6V, I C = -1mA DC current transfer raito hFE 80 — 160 — VCE = -6V, IC = -2mA — — -0.9 V I C = -30mA, IB = -3mA Collector to emitter saturation VCE(sat) voltage 2 1.5 1.0 0.5 0 -100 -10 -1.0 -0.1 -0.01 -0.4 Ta = 75°C VCE = -6 V Pulse test -0.2 25°C -0.6 -0.8 -25°C Typical Transfer Characteristics 50 100 Ambient Temperature Ta (°C) -1.0 150 Maximum Collector Dissipation Curve 0 Base to Emitter Voltage VBE (V) -10 -50 µA 3 2SB1688 Typical Output Characteristics -60 µA -70 µA -40 µA -30 µA -8 -6 -20 µA -100 -20 -40 -60 -80 -100 Collector to Emitter Voltage VCE (V) Pulse Test IB = -10 µA -4 -2 0 -25°C DC Current Transfer Ratio vs. Collector Current 25°C -10 Collector Current IC (mA) -1.0 VCE = -6 V Pulse Test Ta = 75°C 1 -0.1 10 100 1,000 Collector Current IC (mA) DC Current Transfer Ratio hFE Main Characteristics Collector Power Dissipation PC (W) Collector Current IC (mA) 2SB1688 -10 -1.0 25°C Ta = 75°C -0.1 -0.01 -0.1 Gain Bandwidth Product vs. Collector Current 1,000 IC/IB = 10 Pulse Test Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE (sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current -25°C -1.0 -10 VCE = -6 V 100 10 1 -0.1 -100 -1.0 -10 Collector Current IC (mA) Collector Output Capacitance Cob (pF) Collector Current IC (mA) 100 Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz IE = 0 10 1.0 0.1 -0.1 -1.0 -10 -100 Collector to Base Voltage VCB (V) 4 -100 2SB1688 Package Dimensions As of January, 2001 Unit: mm 4.8 ± 0.4 0.7 0.60 Max 0.55Max 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.4 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 (1) Conforms Conforms 0.25 g 5 2SB1688 Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 6 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.