HITACHI 2SD2337

2SD2337
Silicon NPN Triple Diffused
Application
Low frequency high voltage power amplifier TV vertical deflection output complementary pair with
2SB1530
Outline
TO-220FM
12
3
1. Base
2. Collector
3. Emitter
2SD2337
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
200
V
Collector to emitter voltage
VCEO
150
V
Emitter to base voltage
VEBO
6
V
Collector current
IC
2
A
Collector peak current
I C(peak)
5
A
Collector power dissipation
PC
1.5
W
PC *
1
20
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
150
—
—
V
I C = 50 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
6
—
—
V
I E = 5 mA, IC = 0
Collector cutoff current
I CBO
—
—
1
µA
VCB = 120 V, IE = 0
60
—
320
VCE = 4 V, IC = 50 mA
hFE2
60
—
—
VCE = 10 V, IC = 500 mA*2
Collector to emitter saturation
voltage
VCE(sat)
—
—
3.0
V
I C = 500 mA, IB = 50 mA*2
Base to emitter voltage
VBE
—
—
1.0
V
VCE = 4 V, IC = 50 mA
DC current transfer ratio
hFE1*
1
Notes: 1. The 2SD2337 is grouped by hFE1 as follows.
2. Pulse test.
B
C
D
60 to 120
100 to 200
160 to 320
2
2SD2337
Maximum Collector Dissipation Curve
Area of Safe Operation
10
20
TC
(60, 0.4 A)
0.2
)
100
50
Ambient temperature Ta (°C)
Case temperature TC (°C)
0.5
0.1
150
(150 V, 65 mA)
0.05
2
5
10 20
50 100 200
Collector to emitter voltage VCE (V)
Typical Output Characteristics
0.8
0.6
TC = 25°C
10
9
8
7
6
5
4
0.4
3
2
0.2
Typical Transfer Characteristics
1,000
1 mA
IB = 0
Collector current IC (mA)
Collector current IC (A)
1.0
°C
25
0
Ta
(15, 2 A)
1.0
=
1.5 W
2
(T C
10
IC (max)
(Continuous)
n
tio
ra
pe
O
Collector current IC (A)
5
DC
Collector power dissipation Pc (W)
30
VCE = 4 V
Pulse
500
200
TC = 75°C 25
100
–25
50
20
10
5
2
1
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
0
0.2
0.4
0.6
0.8
1.0
Base to emitter voltage VBE (V)
3
DC Current Transfer Ratio
vs. Collector Current
DC current transfer ratio hFE
500
200
TC = 75°C
25
100
–25
50
20
10
5
10
4
VCE = 4 V
Pulse
20
50 100 200
500 1,000 2,000
Collector current IC (mA)
Collector to emitter saturation voltage VCE (sat) (V)
2SD2337
Collector to Emitter Saturation Voltage
vs. Collector Current
0.5
lC = 10 lB
Pulse
0.2
TC = 75°C
0.1
0.05
–25
25
0.02
0.01
0.005
10
30
100
300
1,000 2,000
Collector current IC (mA)
10.0 ± 0.3
2.8 ± 0.2
7.0 ± 0.3
φ 3.2 ± 0.2
Unit: mm
0.7 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
4.45 ± 0.3
2.5
14.0 ± 1.0
5.0 ± 0.3
1.2 ± 0.2
1.4 ± 0.2
2.0 ± 0.3
12.0 ± 0.3
17.0 ± 0.3
0.6
2.5 ± 0.2
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220FM
—
Conforms
1.8 g
Cautions
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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