2SC5025 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————————————————————————— Collector to base voltage VCBO 30 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 20 V ——————————————————————————————————————————— Emitter to base voltage VEBO 3.5 V ——————————————————————————————————————————— Collector current IC 0.3 A ——————————————————————————————————————————— Collector peak current ic(peak) 0.5 A ——————————————————————————————————————————— Collector power dissipation PC 1 W ——————————————————————————————————————————— Collector power dissipation PC*1 5 W ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— Note: 1. Value at TC = 25°C. 2SC5025 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 20 — — V IC = 10 mA, RBE = ∞ ——————————————————————————————————————————— Collector cutoff current ICBO — — 1.0 mA VCB = 25 V, IE = 0 ——————————————————————————————————————————— Emitter cutoff current IEBO — — 1.0 mA VEB = 3 V, IC = 0 ——————————————————————————————————————————— DC current transfer ratio hFE 40 — 200 VCE = 5 V, IC = 50 mA ——————————————————————————————————————————— Base to emitter voltage VBE — — 1.2 V VCE = 5 V, IC = 300 mA ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — — 2.0 V IC = 300 mA, IB = 60 mA ——————————————————————————————————————————— Gain bandwidth product fT — 1.2 — GHz VCE = 5 V, IC = 100 mA ——————————————————————————————————————————— Collector output capacitance Cob — 5.0 — pF VCB = 10 V, IE = 0, f = 1 MHz ——————————————————————————————————————————— Input capacitance Cib — 10 — pF VEB = 2 V, IC = 0, f = 1 MHz ——————————————————————————————————————————— See characteristic curves of 2SC3652. 2SC5025 Maximum Collector Power Dissipation Curve Collector Power Dissipation Pc (W) 8 6 Tc 4 2 Ta 0 50 100 150 Temperature T (°C) 200