KEXIN 2SB1000

Transistors
SMD Type
Silicon PNP Epitaxial
2SB1000
Features
Low frequency amplifier.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-25
V
Collector to emitter voltage
VCEO
-20
V
Emitter to base voltage
VEBO
-5
V
IC
-1
A
Collector current
ICP *
-1.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
peak collector current
* PW
10 ms; d
0.02.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO IC = -10 ìA, IE = 0
-25
Collector to emitter breakdown voltage
V(BR)CEO IC = -1 mA, RBE =
-20
V
Emitter to base breakdown voltage
V(BR)EBO IE = -10 ìA, IC = 0
-5
V
V
Collector cutoff current
ICBO
VCB = -20 V, IE = 0
-0.1
ìA
Emitter cutoff current
IEBO
VEB = -4 V, IC = 0
-0.1
ìA
DC current transfer ratio *
hFE
VCE = -2 V, IC = -0.5 A
85
240
Collector to emitter saturation voltage *
VCE(sat) IC = -0.8 A, IB = -0.08 A
-0.2
-0.3
V
Base to emitter saturation voltage *
VBE(sat) IC = -0.8 A, IB = -0.08 A
-0.94
-1.1
V
VCE = -2 V, IC = -0.15 A
200
MHz
VCB = -10 V, IE = 0 f=1MHz
38
pF
Gain bandwidth product
fT
Collector output capacitance
Cob
hFE Classification
Marking
AH
AJ
hFE
85 170
120 240
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