2SK1622 L , 2SK1622 S Silicon N-Channel MOS FET Application LDPAK High speed power switching Features 1 • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 3 1 2, 4 S type 2 3 L type 1. Gate 2. Drain 3. Source 4. Drain 1 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 25 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 100 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 25 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 2SK1622 L , 2SK1622 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to source on state resistance RDS(on) — 0.033 0.04 Ω ID = 15 A, VGS = 10 V * ——————————— ——————————– — ID = 15 A, VGS = 4 V * 0.05 0.06 ——————————————————————————————————————————— Forward transfer admittance |yfs| 12 20 — S ID = 15 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1400 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 720 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 220 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 15 — ns ———————————————————————————————— Rise time tr — 130 — ns ID = 15 A, VGS = 10 V, RL = 2 Ω ———————————————————————————————— Turn-off delay time td(off) — 270 — ns ———————————————————————————————— Fall time tf — 180 — ns ——————————————————————————————————————————— Body to drain diode forward voltage VDF — 1.3 — V IF = 25 A, VGS = 0 ——————————————————————————————————————————— Body to drain diode reverse recovery time trr — 135 — ns IF = 25 A, VGS = 0, diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK972. 2SK1622 L , 2SK1622 S Power vs. Temperature Derating Channel Dissipation Pch (W) 60 40 20 0 50 100 Case Temperature TC (°C) 150