2SK2206 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • • • • Low on–resistance Low drive current High speed switching 4 V gate drive device can be driven from 5 V source • Suitable for DC – DC converter, Motor control 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 45 A ——————————————————————————————————————————— Drain peak current ID* 180 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 45 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 2SK2206 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.011 0.015 Ω ID = 25 A VGS = 10 V * ———————————————————————— — 0.016 0.022 Ω ID = 25 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 23 38 — S ID = 25 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3600 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 2000 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 400 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = 25 A ———————————————————————————————— Rise time tr — 230 — ns ———————————————————————————————— Turn–off delay time td(off) — 435 — ns VGS = 10 V RL = 1.2 Ω ———————————————————————————————— Fall time tf — 360 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — 1.1 — V IF = 45 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 75 — ns IF = 45 A, VGS = 0, diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test ■ See characteristic curve of 2SK2204. 2SK2206 Power vs. Temperature Derating I D (A) 20 10 100 PW 50 DC 20 100 150 5 Case Temperature Tc (°C) s( 1s h Ta = 25 °C 0.5 0.5 200 0m Op ot) tio n( Operation in Tc this area is =2 5° limited by R DS(on) C) 10 1 50 =1 era 2 0 10 µs 10 0µ s 1m s 200 Drain Current 30 1 2 5 10 20 50 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Pch (W) Channel Dissipation Maximum Safe Operation Area 500 40 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.03 0.2 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 3.57 °C/W, Tc = 25 °C 0.1 0.05 PDM 0.02 1 0.0 e p ot T h 0.01 10 µ 100 µ PW T PW uls 1s D= 1m 10 m Pulse Width 100 m PW (S) 1 10