Transistors IC SMD Type Silicon P-Channel MOS FET 2SJ130S TO-252 Features Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 ultrasonic power oscillators 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 +0.25 2.65-0.1 Suitable for switching regulator, DC-DC converter and +0.28 1.50-0.1 +0.2 9.70-0.2 No secondary breakdown +0.15 0.50-0.15 Low drive current 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Symbol Rating Unit VDSS -300 V V Gate to source voltage VGSS Drain current ID(DS) -1 A ID(pulse) -2 A Drain peak current 20 Body to drain diode reverse drain current IDR -1 A Channel dissipation (Tc=25 ) Pch 20 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SJ130S Electrical Characteristics Ta = 25 Parameter Testconditons Drain to source breakdown voltage V(BR)DSS ID = -10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS IG = 100 Min Typ Max -300 A, VDS = 0 Unit V V 20 Gate to source leak current IGSS VGS = 16 V, VDS = 0 10 A Zero gate voltage drain current IDSS VDS = -240 V, VGS = 0 -100 A Gate to source cutoff voltage VGS(off) ID = -1 mA, VDS = -10 V Static Drain to source on stateresistance RDS(on) ID = -0.5 A, VGS = -10 V Forward transfer admittance |yfs| ID = -0.5 A, VDS = -20 V Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time 2 Symbol www.kexin.com.cn tr -2 0.25 S VDS = -10 V, VGS = 0, 235 pF f = 1 MHz 65 pF 16 pF ID = -0.5 A, VGS = -10 V, 10 ns RL = 60 Ù 25 ns 35 ns tf trr V 8.5 0.4 td(off) VDF -4 6.0 IF = -1 A, VGS = 0 IF = -1 A, VGS = 0, diF/dt = 50 A/ s 45 ns -0.9 V 200 ns