2SK2114, 2SK2115 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator 1. Gate 2. Drain 3. Source Table 1 Ordering Information Type No. VDSS ———————————————————— 2SK2114 450 V ———————————————————— 2SK2115 500 V ———————————————————— Table 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK2114 VDSS ————— 2SK2115 450 V ——— VDSS 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 5 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 2SK2114, 2SK2115 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage 2SK2114 V(BR)DSS 450 ———— —— 2SK2115 500 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current 2SK2114 IDSS — — 250 µA VDS = 360 V, VGS = 0 ———— ————————— 2SK2115 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source 2SK2114 RDS(on) on state resistance ———— 2SK2115 — 1.0 1.4 Ω ID = 2.5 A, VGS = 10 V * ——————————— — 1.2 1.5 ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.5 4.0 — S ID = 2.5 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 640 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 160 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 20 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = 2.5 A ———————————————————————————————— Rise time tr — 25 — ns ———————————————————————————————— Turn–off delay time td(off) — 50 — ns VGS = 10 V RL = 12 Ω ———————————————————————————————— Fall time tf — 30 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — 0.95 — V IF = 5 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 300 — ns IF = 5 A, VGS = 0, diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test ■ See characteristics curve of 2SK1155, 2SK1156. 2SK2114, 2SK2115 Power vs. Temperature Derating Maximum Safe Operation Area 40 Drain Current ID (A) 10 0 1 5 1 0.5 Operation in this Area is Limited by RDS (on) 0.1 Ta = 25°C 0.05 50 100 Normalized Transient Thermal Impedance γS (t) Case Temperature 150 200 µs s 2 0.2 0 m µs 20 10 10 ) ) ot °C Sh 25 (1 C= s m n (T 10 tio = ra e PW Op C D Channel Dissipation 20 30 10 Pch (W) 50 1 2SK1627 2SK1626 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Tc (°C) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.2 θch–c (t) = γ S (t) · θch–c θch–c = 3.57°C/W, TC = 25°C 0.1 0.1 0.03 0.01 10 µ 0.05 PDM 0.02 0.01 ulse P hot 1S 100 µ T 1m 10 m Pulse Width PW (s) 100 m D = PW T PW 1 10