HITACHI 2SK1698

2SK1698
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device - - - can be driven from 5 V source.
Suitable for DC – DC converter, motor drive, power switch, solenoid drive
Outline
UPAK
3
2 1
4
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SK1698
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
0.3
A
1.2
A
0.3
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
Channel dissipation
Pch*
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm)
3. Marking is “FY”.
2
2SK1698
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
100
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
50
µA
VDS = 80 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
3.5
4.5
Ω
I D = 0.2 A, VGS = 10 V *1
—
4.5
6.5
Ω
I D = 0.2 A, VGS = 4 V *1
Forward transfer admittance
|yfs|
0.22
0.35
—
S
I D = 0.2 A, VDS = 10 V *1
Input capacitance
Ciss
—
35
—
pF
VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
14
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
3.5
—
pF
Turn-on delay time
t d(on)
—
2
—
ns
I D = 0.2 A, VGS = 10 V,
Rise time
tr
—
4
—
ns
RL = 150 Ω
Turn-off delay time
t d(off)
—
17
—
ns
Fall time
tf
—
15
—
ns
Body to drain diode forward
voltage
VDF
—
0.9
—
V
I F = 0.3 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
80
—
ns
I F = 0.3 A, VGS = 0,
diF/dt = 50 A/µs
Note
1. Pulse test
See characteristic curve of 2SK1337.
3
2SK1698
Maximum Safe Operation Area
Power vs. Temperature Derating
5
3
ar
(o ea
n)
DS
Drain Current I D (A)
O
is per
lim at
ite ion
d in
by th
R is
1
3
10
t)
0.3
(T
c
o
sh
Ambient Temperature Ta (°C)
150
Ta = 25°C
(1
100
O
pe
ra
tio
n
s
m
50
0.005
0.1
10
0.03
0.01
0
4
0.1
DC
=
0.5
0.3
µs µs
10 100 s
m
1
1.0
1
PW
Channel Dissipation Pch (W)
1.5
=
25
°C
)
30
100
Drain to Source Voltage VDS (V)
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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products.
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