4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver • Discrete packaged devices of same die: 2SK1254(L), 2SK1254(S) 4AK22 Outline SP-10 3 D 5 D 4 G 7 D 12 34 56 78 9 10 9 D 6 G 8 G 2G 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Symbol Rating Unit Drain to source voltage VDSS 120 V Gate to source voltage VGSS ±20 V Drain current ID 3 A 12 A 3 A 28 W Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR Channel dissipation 1 Pch (Tc = 25°C)* 2 2 Channel dissipation Pch* 4 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 devices operation 2 4AK22 Electrical Characteristics (Ta = 25°C) (1 Unit) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 120 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — 100 µA VDS = 100 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V I D = 1 mA, VDS = 10 V Static drain to source on state RDS(on) — 0.3 0.4 Ω I D = 1.5 A, VGS = 10 V*1 — 0.35 0.55 Ω I D = 1.5 A, VGS = 4 V*1 resistance Forward transfer admittance |yfs| 2.0 3.5 — S I D = 1.5 A, VDS = 10 V*1 Input capacitance Ciss — 420 — pF VDS = 10 V, VGS = 0, Output capacitance Coss — 190 — pF f = 1 MHz Reverse transfer capacitance Crss — 25 — pF Turn-on delay time t d(on) — 5 — ns I D = 1.5 A, VGS = 10 V, Rise time tr — 20 — ns RL = 20 Ω Turn-off delay time t d(off) — 160 — ns Fall time tf — 40 — ns Body to drain diode forward voltage VDF — 0.95 — V I F = 3 A, VGS = 0 Body to drain diode reverse recovery time t rr — 160 — ns I F = 3 A, VGS = 0 dIF/dt = 50 A/µs Note: 1. Pulse Test See characteristic curves of 2SK1254(L), 2SK1254(S) 3 4AK22 Maximum Channel Dissipation Curve Maximum Channel Dissipation Curve 5 4 3 30 Condition : Channel Dissipation of each die is identical Channel Dissipation Pch (W) Channel Dissipation Pch (W) 6 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 2 1 0 25 75 50 100 125 Ambient Temperature Ta (°C) 20 Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 10 0 150 50 100 125 25 75 Case Temperature TC (°C) Maximum Safe Operation Area 50 Operation in this area is limited by RDS (on) 10 10 µs µs 0 10 5 s 10 m = C s pe m O 1 1 PW 2 D (1 ra 0.5 = 0.2 ) (T C ot n sh tio Drain Current ID (A) 20 ) Ta = 25°C °C 25 0.1 0.05 1 4 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) 150 Unit: mm 26.5 ± 0.3 1.82 2.54 1 2 3 4 0.55 ± 0.1 1.4 5 6 7 10.5 ± 0.5 2.5 10.0 ± 0.3 4.0 ± 0.2 8 9 1.5 ± 0.2 +0.1 0.55 –0.06 10 Hitachi Code JEDEC EIAJ Weight (reference value) SP-10 — — 2.9 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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