HITACHI 4AK22

4AK22
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A
R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
• Discrete packaged devices of same die: 2SK1254(L), 2SK1254(S)
4AK22
Outline
SP-10
3
D
5
D
4
G
7
D
12
34
56
78
9 10
9
D
6
G
8
G
2G
1S
S 10
1, 10.
Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Item
Symbol
Rating
Unit
Drain to source voltage
VDSS
120
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
3
A
12
A
3
A
28
W
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
Channel dissipation
1
Pch (Tc = 25°C)*
2
2
Channel dissipation
Pch*
4
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 devices operation
2
4AK22
Electrical Characteristics (Ta = 25°C) (1 Unit)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
120
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
100
µA
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
RDS(on)
—
0.3
0.4
Ω
I D = 1.5 A, VGS = 10 V*1
—
0.35
0.55
Ω
I D = 1.5 A, VGS = 4 V*1
resistance
Forward transfer admittance
|yfs|
2.0
3.5
—
S
I D = 1.5 A, VDS = 10 V*1
Input capacitance
Ciss
—
420
—
pF
VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
190
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
25
—
pF
Turn-on delay time
t d(on)
—
5
—
ns
I D = 1.5 A, VGS = 10 V,
Rise time
tr
—
20
—
ns
RL = 20 Ω
Turn-off delay time
t d(off)
—
160
—
ns
Fall time
tf
—
40
—
ns
Body to drain diode forward
voltage
VDF
—
0.95
—
V
I F = 3 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
160
—
ns
I F = 3 A, VGS = 0
dIF/dt = 50 A/µs
Note:
1. Pulse Test
See characteristic curves of 2SK1254(L), 2SK1254(S)
3
4AK22
Maximum Channel Dissipation Curve
Maximum Channel Dissipation Curve
5
4
3
30
Condition : Channel Dissipation of
each die is identical
Channel Dissipation Pch (W)
Channel Dissipation Pch (W)
6
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
2
1
0
25
75
50
100 125
Ambient Temperature Ta (°C)
20
Condition : Channel Dissipation
of each die is identical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
10
0
150
50
100 125
25
75
Case Temperature TC (°C)
Maximum Safe Operation Area
50
Operation in this area
is limited by RDS (on)
10
10
µs µs
0
10
5
s
10
m
=
C
s
pe
m
O
1
1
PW
2
D
(1
ra
0.5
=
0.2
)
(T C
ot
n
sh
tio
Drain Current ID (A)
20
)
Ta = 25°C
°C
25
0.1
0.05
1
4
3
10
30
100 300 1,000
Drain to Source Voltage VDS (V)
150
Unit: mm
26.5 ± 0.3
1.82
2.54
1
2
3
4
0.55 ± 0.1
1.4
5
6
7
10.5 ± 0.5
2.5
10.0 ± 0.3
4.0 ± 0.2
8
9
1.5 ± 0.2
+0.1
0.55 –0.06
10
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SP-10
—
—
2.9 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
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traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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