HITACHI 4AK25

4AK25
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R DS(on) 0.45 , VGS = 10 V, I D = 1 A
• Low drive current
• High speed switching
• High density mounting
Outline
SP-10
3
D
5
D
4
G
2G
1S
7
D
6
G
12
34
56
78
9 10
9
D
8
G
S 10
1, 10.
Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
4AK25
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
1.5
A
4.5
A
1.5
A
24
W
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
Channel dissipation
1
Pch (Tc = 25°C)*
2
2
Channel dissipation
Pch*
3.6
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 Devices operation
2
4AK25
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
250
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.35
0.45
Ω
ID = 1 A
VGS = 10 V*1
—
0.47
0.65
Ω
ID = 1 A
VGS = 4 V*1
Forward transfer admittance
|yfs|
0.9
1.5
—
S
ID = 1 A
VDS = 10 V*1
Input capacitance
Ciss
—
140
—
pF
VDS = 10 V
Output capacitance
Coss
—
70
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
20
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
3
—
ns
ID = 1 A
Rise time
tr
—
12
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
50
—
ns
RL = 30 Ω
Fall time
tf
—
30
—
ns
Body to drain diode forward
voltage
VDF
—
1.1
—
V
I F = 1.5 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
70
—
µs
I F = 1.5 A, VGS = 0,
dIF/dt = 50 A/µs
Note:
1. Pulse Test
See characteristic curves of 2SK975
3
4AK25
Maximum Channel Dissipation Curve
4
Maximum Channel Dissipation Curve
30
Condition : Channel Dissipation of
each die is identical
Channel Dissipation Pch (W)
Channel Dissipation Pch (W)
6
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
2
0
50
100
150
Condition : Channel Dissipation of
each die is identical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device
Operation
20
10
0
Ambient Temperature Tc (°C)
50
Maximum Safe Operation Area
Drain Current I D (A)
µs
)
ot
µs
0
Sh
s
10
1
(
m
n
s
1
tio
m
ra )
10
pe °C
=
O 25
C
D c=
(T
)
n
io is on
at ea S (
r
pe ar D
O his y R
t b
in ited
m
li
PW
1
10
10
3
0.3
0.1
0.03
Ta = 25°C
0.01
0.1 0.2 0.5 1
2
5 10 20 50 100
Drain to Source Voltage VDS (V)
4
100
Case Temperature Tc (°C)
150
Unit: mm
26.5 ± 0.3
1.82
2.54
1
2
3
4
0.55 ± 0.1
1.4
5
6
7
10.5 ± 0.5
2.5
10.0 ± 0.3
4.0 ± 0.2
8
9
1.5 ± 0.2
+0.1
0.55 –0.06
10
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SP-10
—
—
2.9 g
Cautions
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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