6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 (Z) 1st. Edition February 1999 Features • • • • Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density mounting Outline 6AM15 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Nch Pch Drain to source voltage VDSS 60 –60 V Gate to source voltage VGSS ±20 ±20 V Drain current ID 10 –10 A Drain peak current ID(pulse)Note1 40 –40 A Body-drain diode reverse drain current IDR 10 –10 A Avalanche current IAP Note3 10 –10 A Avalanche energy EAR Note3 8.5 mJ Channel dissipation Pch (Tc = 25°C) Note2 42 W Channel dissipation Pch Note2 4.8 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 6 Devices operation 3. Value at Ta = 25°C, Rg ≥ 50 Ω Electrical Characteristics (N Channel) (Ta = 25°C) Item Symbol Drain to source breakdown voltage Typ Max Unit Test Conditions V(BR)DS 60 S — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GS ±20 S — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V VDS = 10 V, I D = 1 mA Static drain to source on state RDS(on) — 0.045 0.060 Ω ID = 5 A, VGS = 10 V Note5 resistance RDS(on) — 0.070 0.115 Ω ID = 5 A, VGS = 4 V Note5 Forward transfer admittance |yfs| 5.5 9 — S ID = 5 A, VDS = 10 V Note5 Input capacitance Ciss — 500 — pF VDS = 10 V Output capacitance Coss — 260 — pF VGS = 0 Reverse transfer capacitance Crss — 110 — pF f = 1 MHz Turn-on delay time td(on) — 10 — ns VGS =10 V, ID = 5 A 2 Min 6AM15 RL = 6 Ω Rise time tr — 50 — ns Turn-off delay time td(off) — 90 — ns Fall time tf — 100 — ns Body–drain diode forward voltage VDF — 0.9 — V IF =10 A, VGS = 0 Body–drain diode reverse recovery time trr — 52 — ns IF =10 A, VGS = 0 Note: diF/ dt = 50A/ µs 5. Pulse test Electrical Characteristics (P Channel) (Ta = 25°C) Item Symbol Drain to source breakdown voltage Typ Max Unit Test Conditions V(BR)DS –60 S — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GS ±20 S — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V VDS = –10 V, I D = –1 mA Static drain to source on state RDS(on) — 0.085 0.105 Ω ID = –5 A, VGS = –10 V Note5 resistance RDS(on) — 0.115 0.165 Ω ID = –5 A, VGS = –4 V Note5 Forward transfer admittance |yfs| 5.5 9 — S ID = –5 A, VDS = –10 V Note5 Input capacitance Ciss — 850 — pF VDS = –10 V Output capacitance Coss — 420 — pF VGS = 0 Reverse transfer capacitance Crss — 110 — pF f = 1 MHz Turn-on delay time td(on) — 12 — ns VGS = –10 V, ID = –5 A Rise time tr — 55 — ns RL = 6 Ω Turn-off delay time td(off) — 130 — ns Fall time tf — 70 — ns Body–drain diode forward voltage VDF — –0.95 — V IF = –10 A, VGS = 0 Body–drain diode reverse recovery time trr — 65 — ns IF = –10 A, VGS = 0 Note: Min diF/ dt = 50 A/ µs 5. Pulse test _ 6AM15 Main Characteristics 4 6AM15 Main Characteristics ( N Channel ) _ 6AM15 Main Characteristics ( N Channel ) 6 6AM15 Main Characteristics ( N Channel ) _ 6AM15 Main Characteristics ( N Channel ) 8 6AM15 Main Characteristics ( P Channel ) _ 6AM15 Main Characteristics ( P Channel ) 10 6AM15 Main Characteristics ( P Channel ) _ 6AM15 Main Characteristics ( P Channel ) 12 6AM15 Package Dimensions Unit: mm _ 6AM15 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 14