HITACHI HA22022

HA22022
GaAs MMIC
Low Noise Amplifier for Micro Wave Application
ADE-207-227 (Z)
1st. Edition
February 1997
Features
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Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz)
Low voltage and low current operation (3V, 3mA typ.)
Low noise (1.3 dB typ. @1.5Ghz)
High power gain (16 dB typ. @1.5GHz)
Built–in matching circuits (50Ω)
Small surface mount package (MPAK–5)
Outline
MPAK—5
This document may, wholly or partially, be subject to change without notice.
This Device si sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
CAUTION
This product ues GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not
treat them mechanically in the manner which might expose to the Aer. And it should never be thrown
out with general industrial or domestic wastes.
HA22022
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Supply voltage
Vdd
5
V
Maximum current
Idd
6
mA
Power dissipation
Pd
100
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +125
°C
Operation temperature
Topr
–20 to +70
°C
Maximum input power
Pin max
+15
dBm
Electrical Characteristics (Ta = 25°C, Vdd = 3V)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Quiescent current
Idd
2
3
5
mA
No signal
Power gain
PG
14
16
17
dB
f = 1.5 GHz
Noise figure
NF
—
1.3
2
dB
f = 1.5 GHz
Pin
Typical Performance (Ta = 25°C, Vdd = 3V)
Item
Symbol
Typ
Unit
Test Conditions
Pin
VSWR (input)
VSWR in
1.7
—
f = 1.5 GHz
4
VSWR (output)
VSWR out
1.7
—
f = 1.5 GHz
1
3rd order intermodulation
distortion
IM3
58
dB
f = 1.5 GHz, Pin = –30 dBm
2
HA22022
Block Diagram
in
1pF
4
3
Cs
100pF
5.6nH
2
Vdd
5
GND
out
1
100pF
3
HA22022
Pin Arrangement
GDA
Monthly code (variable)
Mark type
5
GDA
1
2
3
4
Top View
Pin No.
Pin name
Function
1
RF out
RF output
2
GND
Ground
3
Cs
Bypath capacitor (>100 pF)
4
RF in
RF input
5
Vdd
Power supply
4
HA22022
Pattern Layout
scale 4/1
: φ0.5mm
: φ0.3mm
Front Side view of PCB Pattern
scale 4/1
: Capacitor
100pF
5.6nH
cs
: Inductor
GDA
RF in
1pF
Vdd
RF out
100pF
ER=4.8
H=1mm
Front Side view of Part Layout(1.5GHz)
5
HA22022
Main Characteristics
Power Gain vs. Frequency
Noise Figure vs. Frequency
20
4
Noise Figure NF (dB)
Power Gain PG (dB)
Vdd = 3 V
Ta = +25°C
15
10
5
3
2
1
Vdd = 3 V
Ta = +25°C
0
1.0
1.5
2.0
0
1.0
2.5
Frequency f (GHz)
5
input
4
3
output
2
1.5
2.0
Frequency f (GHz)
2.5
Output Power Pout (dBm)
Vdd = 3 V
Ta = +25°C
VSWR
2.5
20
6
6
2.0
Output Power, 3rd Order Inter—
modlation Distortion vs. Input Power
VSWR vs. Frequency
1
1.0
1.5
Frequency f (GHz)
Vdd = 3 V
f = 1.5 GHz
0 ud = 1.5006 GHz
Ta = +25°C
Pout
—20
—40
im3
—60
—80
—60 —50 —40 —30 —20 —10
Input Power Pin (dBm)
0
10
HA22022
Noise Figure vs. Supply Voltage
Power Gain vs. Supply Voltage
20
4
f = 1.5 GHz
Ta = +25°C
Noise Figure NF (dB)
Power Gain PG (dB)
f = 1.5 GHz
Ta = +25°C
15
10
5
0
2.5
3.0
3.5
4.0
4.5
3
2
1
0
2.5
5.0
VSWR vs. Supply Voltage
5
f = 1.5 GHz
Ta = +25°C
P1dB, IP3o (dBm)
VSWR
4
3
2
3.0
3.5
4.0
4.5
5.0
Supply Voltage Vdd (V)
Supply Voltage Vdd (V)
input
Pout @ 1dB Gain Compression, 3rd Order
Inter—cept Point (out) vs. Supply Voltage
20
f = 1.5 GHz
ud = 1.5006 GHz
15 Ta = +25°C
IP3o
10
5
P1dB
0
output
1
2.5
3.0
3.5
4.0
4.5
Supply Voltage Vdd (V)
5.0
—5
2.5
3.0
3.5
4.0
4.5
5.0
Supply Voltage Vdd (V)
7
HA22022
Noise Figure vs. Temperature
Power Gain vs. Temperature
20
4
Vdd = 3 V
f = 1.5 GHz
Noise Figure NF (dB)
Power Gain PG (dB)
Vdd = 3 V
f = 1.5 GHz
15
10
5
0
—25
0
25
50
3
2
1
0
—25
75
5
Vdd = 3 V
f = 1.5 GHz
P1dB, IP3o (dBm)
4
VSWR
25
50
75
Pout @ 1dB Gain Compression, 3rd Order
Inter—cept Point (out) vs. Ambient Temperature
20
Vdd = 3 V
f = 1.5 GHz
15 ud = 1.5006 GHz
VSWR vs. Temperature
3
2
0
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
input
IP3o
10
5
P1dB
0
output
1
—25
0
25
50
Ambient Temperature Ta (°C)
8
75
—5
—25
0
25
50
Ambient Temperature Ta (°C)
75
HA22022
Quiescent Current vs.
Ambient Temperature
Quiescent Current vs. Supply Voltage
6
6
Vdd = 3 V
Quiescent Current Idd (mA)
Quiescent Current Idd (mA)
Ta = +25¡C
5
4
3
2
1
2.5
3.0
3.5
4.0
4.5
Supply Voltage Vdd (V)
5.0
5
4
3
2
1
—25
0
25
50
75
Ambient Temperature Ta (°C)
9
HA22022
Package Dimentions
+ 0.2
1.1—0.1
0.3
Unit: mm
2.9 ± 0.2
1.9
0.95 0.95
+ 0.1
10
0.6
0.6
0.4 ± 0.1
0.16 —0.06
0 to 0.1
2.8
+ 0.2
—0.3
0.4 ± 0.1
0.2
1.6 +—0.1
0.4 ± 0.1
Hitachi code
EIAJ
JEDEC
MPAK—5
HA22022
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.
If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then
consult a physician without delay.
2. Disposal of this product must be handled, separately from other general refuse, by a specialist
processing contractor in the same way as dangerous items.
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HA22022
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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Japan
: http://www.hitachi.co.jp/Sicd/index.htm
For further information write to:
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(America) Inc.
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Germany
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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