2SC5138 Silicon NPN Epitaxial ADE-208-225A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “YL–”. Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2SC5138 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 12 V Emitter to base voltage VEBO 2 V Collector current IC 30 mA Collector power dissipation PC 80 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector cutoff current I CBO — — 10 µA VCB = 20 V, IE = 0 I CEO — — 1 mA VCE = 12 V, RBE = ∞ Emitter cutoff current I EBO — — 10 µA VEB = 2 V, IC = 0 DC current transfer ratio hFE 50 120 250 Collector output capacitance Cob — 0.65 1.05 pF VCB = 5 V, IE = 0, f = 1 MHz Gain bandwidth product fT 4 6 — GHz VCE = 5 V, IC = 10 mA Power gain PG 9.5 13 — dB VCE = 5 V, IC = 10 mA, f = 900 MHz Noise figure NF — 1.8 3.0 dB VCE = 5 V, IC = 5 mA, f = 900 MHz 2 VCE = 5 V, IC = 10 mA 2SC5138 DC Current Transfer Ratio vs. Collector Current Maximum Collector Dissipation Curve 200 DC Current Transfer Ratio h FE Collector Power Dissipation Pc (mW) 160 160 120 120 80 40 0 50 100 150 Ambient Temperature Ta (°C) Collector Output Capacitance Cob (pF) VCE = 5V 8 6 4 2 0 1 2 5 10 20 Collector Current I C (mA) 50 80 40 0 0.01 200 Gain Bandwidth Product vs. Collector Current 10 Gain Bandwidth Product f T (GHz) V CE = 5 V Pulse Test 1.0 0.1 1 10 Collector Current I C (mA) 100 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 0.8 0.6 0.4 0.2 0 0.1 0.2 0.5 1 2 5 10 20 Collector to Base Voltage V CB (V) 3 2SC5138 Power Gain vs. Collector Current 16 f = 900 MHz VCE = 5V 12 8 4 0 0.1 0.2 4 10 Noise Figure NF (dB) Power Gain PG (dB) 20 0.5 1 2 5 10 20 Collector Current I C (mA) 50 Noise Figure vs. Collector Current 8 f = 900 MHz VCE = 5V 6 4 2 0 0.1 0.2 0.5 1 2 5 10 20 Collector Current I C (mA) 50 2SC5138 S11 Parameter vs. Frequency .8 1 S21 Parameter vs. Frequency Scale: 4 / div. 90° 1.5 .6 60° 120° 2 .4 3 4 5 .2 30° 150° 10 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –.4 –30° –150° –3 –2 –.6 –.8 –1 –90° Condition: V CE = 5 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 10 mA) Condition: V CE = 5 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 10 mA) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.04 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition: V CE = 5 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 10 mA) –2 –.6 –.8 –1 –1.5 Condition: V CE = 5 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 10 mA) 5 2SC5138 Package Dimensions As of January, 2001 Unit: mm 1.6 ± 0.2 +0.1 0.3 –0.05 +0.1 3 2 +0.1 1 1.6 ± 0.2 0.4 0.8 ± 0.1 0.4 0.15 –0.05 0 – 0.1 +0.1 0.2 –0.05 0.55 0.5 0.5 1.0 ± 0.1 0.7 ± 0.1 0.2 –0.05 Hitachi Code JEDEC EIAJ Mass (reference value) 6 SMPAK — Conforms 0.003 g 2SC5138 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 7