HITACHI HA17747P

HA17747/P
Dual Operational Amplifier
Description
The HA17747/P is a dual internal phase compensation high-performance operational amplifier, that is
appropriate for use in a wide range of applications in the test and control fields.
Features
•
•
•
•
•
High voltage gain
: 106 dB (Typ)
Wide output amplitude : ±13 V (Typ) (at RL ≥ 2 kΩ)
Shorted output protection
Adjustable offset voltage
Internal phase compensation
Ordering Information
Type No.
Application
Package
HA17747P
Industrial use
DP-14
HA17747
Commercial use
Pin Arrangement
Vin(−)1
1
Vin(+)1
2
Offset
Null 1
3
VEE
4
Offset
Null 2
5
Vin(+)2
6
Vin(−)2
14 Offset
Null 1
13 VCC1
−
+
1
12 Output 1
11 NC
+
−
2
7
(Top view)
10 Output 2
9
VCC2
8
Offset
Null 2
HA17747/P
Circuit Structure
VCC
Vin(+)
Vin(−)
Vout
To VCC
To VCC
VEE
Offset Null
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
HA17747P
HA17747
Unit
Power-supply voltage
VCC
+18
+18
V
VEE
–18
Input voltage
Vin
±15 *
Differential input voltage
Vin(diff)
±30
Offset adjustment pin – VEE voltage
VOFF – VEE
±0.5
–18
1
±15 *
V
1
±30
V
±0.5
2
V
V
2
Allowable power dissipation
PT
670 *
670 *
mW
Operating temperature
Topr
–20 to +75
–20 to +75
°C
Storage temperature
Tstg
–55 to +125
–55 to +125
°C
Notes: 1. When the power-supply voltage is less than ±15 V, the input voltage must fall within the powersupply voltage range.
2. These are the allowable values up to Ta = 45°C. Above that temperature, derate by 8.3 mW/°C.
2
HA17747/P
Electrical Characteristics
Electrical Characteristics-1 (VCC = –VEE = 15 V, Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Input offset voltage
VIO
—
1.0
6.0
mV
RS ≤ 10 kΩ
Input offset current
I IO
—
20
200
nA
Input bias current
I IB
—
80
500
nA
Voltage gain
AVD
88
106
—
dB
RL ≥ 2 kΩ, Vout = ±10 V
Supply current
I CC
—
1.7
2.8
mA
No load
Power dissipation
Pd
—
50
85
mW
(per channel rating)
Input resistance
Rin
0.3
2.0
—
MΩ
Input capacitance
Cin
—
1.4
—
pF
Output resistance
Rout
—
75
—
Ω
Slew rate
SR
—
1.0
—
V/µs
RL ≥ 2 kΩ
Rise time
tr
—
0.3
—
µs
Vin = –20 mV,
Overshoot
Vover
—
5.0
—
%
RL = 2 kΩ, CL = 100 pF
Input offset voltage adjustment range ∆VIO(adj)
—
±15
—
mV
Output shorted current
I OS
—
25
—
mA
Channel separation
CS
—
120
—
dB
Electrical Characteristics-2 (VCC = –VEE = 15 V, Ta = –20 to +75°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Input offset voltage
VIO
—
1.0
9.0
mV
RS ≤ 10 kΩ
Input offset current
I IO
—
20
400
nA
Input bias current
I IB
—
80
1,100
nA
Power-supply rejection ratio
∆VIO/∆VCC
—
30
150
µV/V RS ≤ 10 kΩ
∆VIO/∆VEE
—
30
150
µV/V RS ≤ 10 kΩ
Voltage gain
AVD
80
—
—
dB
RL ≥ 2 kΩ, Vout = ±10 V
Common-mode rejection ratio
CMR
70
90
—
dB
RS ≤ 10 kΩ
Common-mode input voltage range
VCM
±12
±13
—
V
Maximum output
VOP-P
±12
±14
—
V
RL ≥ 10 kΩ
±10
±13
—
V
RL ≥ 2 kΩ
voltage amplitude
Supply current
I CC
—
2.1
3.7
mA
No load
Power dissipation
Pd
—
65
110
mW
(per channel rating)
3
HA17747/P
Package Dimensions
Unit: mm
19.20
20.32 Max
8
6.30
7.40 Max
14
1.30
7
2.54 ± 0.25
0.48 ± 0.10
0.51 Min
2.39 Max
2.54 Min 5.06 Max
1
7.62
+ 0.10
0.25 – 0.05
0° – 15°
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
4
DP-14
Conforms
Conforms
0.97 g
HA17747/P
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
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(America) Inc.
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San Jose,CA 95134
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Germany
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Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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