HVD138A Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-1589 (Z) Rev.0 Oct. 2002 Features • Adopting the trench structure improves low capacitance. (C = 0.85 pF max) • Low forward resistance. (rf = 1.1 Ω max) • Low operation current. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVD138A T8 SFP Pin Arrangement Cathode mark Mark 1 T8 2 1. Cathode 2. Anode HVD138A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 100 mA Power dissipation Pd 150 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse current IR 10 nA VR = 25 V Forward voltage VF 0.9 V IF = 2 mA Capacitance C 0.85 pF VR = 1 V, f = 1 MHz Forward resistance rf 1.1 Ω IF = 2 mA, f = 100 MHz Note: 1. Please do not use the soldering iron due to avoid high stress to the SFP package. Rev.0, Oct 2002, page 2 of 6 HVD138A Main Characteristic 10-2 10-8 10-9 10 Reverse current IR (A) Forward current IF (A) 10-4 -6 10-8 Ta = 75°C Ta = 50°C Ta = 75°C 10-11 Ta = 50°C 10-12 Ta = 25°C 10-10 10-12 10-10 Ta = 25°C 10-13 0 0.2 0.4 0.6 0.8 10-14 1.0 0 10 20 40 50 Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f = 1MHz f = 100MHz 10 Forward resistance rf (Ω) 10 Capacitance C (pF) 30 Forward voltage VF (V) 1.0 0.1 0.1 1.0 10 1.0 0.1 -4 10 10-3 10-2 10-1 Reverse voltage VR (V) Forward current IF (A) Fig.3 Capacitance vs. Reverse voltage Fig.4 Forward resistance vs. Forward current Rev.0, Oct 2002, page 3 of 6 Forward resistance (parallel) rP (Ω) HVD138A 106 f = 100MHz 105 104 103 102 10 1.0 0.1 0 0.2 0.4 0.6 0.8 Forward voltage VF (V) Fig.5 Forward resistance (parallel) vs. Forward voltage Rev.0, Oct 2002, page 4 of 6 HVD138A Package Dimensions As of July, 2002 1.0 ± 0.10 0.13 ± 0.05 1.4 ± 0.10 0.5 – 0.55 0.3 ± 0.05 0.6 ± 0.05 Unit: mm Hitachi Code JEDEC JEITA Mass (reference value) SFP — — 0.0010 g Rev.0, Oct 2002, page 5 of 6 HVD138A Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 7.0 Rev.0, Oct 2002, page 6 of 6