ETC HVM189S

HVM189S
Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator
ADE-208-1502 (Z)
Rev.0
Feb. 2002
Features
• Low series resistance. (rf = 5.5 max)
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HVM189S
H9
MPAK
Pin Arrangement
3
2
1
(Top View)
1 Cathode2
2 Anode1
3 Cathode1
Anode2
HVM189S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
60
V
Forward current
IF
50
mA
1
Power dissipation
Pd *
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note:
1. Per one device.
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse current
IR


100
nA
VR = 60 V
Forward voltage
VF


1.0
V
IF = 10 mA
Capacitance
C
1.4

1.8
pF
VR = 0 V, f = 1 MHz
Forward resistance
rf


5.5
Ω
IF = 10 mA, f = 100 MHz

200


V
C= 200 pF, R= 0 Ω, Both forward and reverse
direction 1 pulse.
1
ESD-Capability *
Note:
1. Failure criterion ; IR ≥ 100 nA at VR = 60 V.
Rev.0, Feb. 2002, page 2 of 5
HVM189S
Main Characteristic
10-6
10-3
10-7
(A)
Reverse current IR
Forward current IF (A)
10
-5
10-7
10-9
10-8
10-9
10-10
10-11
10-11
10-12
10-13
10-13
0
0.2
0.4
0.6
0.8
1.0
0
Forward voltage VF (V)
20
40
60
100
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
100
100
f=100MHz
( Ω)
f=1MHz
10
Forward resistance rf
Capacitance C (pF)
80
1.0
0.1
0.1
1.0
10
Reverse voltage VR
100
(V)
Fig.3 Capacitance vs. Reverse voltage
10
1.0
10-3
10-2
Forward current IF
10-1
(A)
Fig.4 Forward resistance vs. Forward current
Rev.0, Feb. 2002, page 3 of 5
HVM189S
Package Dimensions
As of July, 2001
1.9 ± 0.2
2.8
+ 0.2
– 0.6
+ 0.2
1.1 – 0.1
0.3
2.8 +– 0.1
0 – 0.1
(0.3)
(0.95) (0.95)
+ 0.10
0.16 – 0.06
(0.65)
1.5 ± 0.15
0.10
3–0.4 +– 0.05
(0.65)
Unit: mm
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.0, Feb. 2002, page 4 of 5
MPAK
—
Conforms
0.011 g
HVM189S
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Feb. 2002, page 5 of 5