HVM189S Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator ADE-208-1502 (Z) Rev.0 Feb. 2002 Features • Low series resistance. (rf = 5.5 max) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HVM189S H9 MPAK Pin Arrangement 3 2 1 (Top View) 1 Cathode2 2 Anode1 3 Cathode1 Anode2 HVM189S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 60 V Forward current IF 50 mA 1 Power dissipation Pd * 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Note: 1. Per one device. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse current IR 100 nA VR = 60 V Forward voltage VF 1.0 V IF = 10 mA Capacitance C 1.4 1.8 pF VR = 0 V, f = 1 MHz Forward resistance rf 5.5 Ω IF = 10 mA, f = 100 MHz 200 V C= 200 pF, R= 0 Ω, Both forward and reverse direction 1 pulse. 1 ESD-Capability * Note: 1. Failure criterion ; IR ≥ 100 nA at VR = 60 V. Rev.0, Feb. 2002, page 2 of 5 HVM189S Main Characteristic 10-6 10-3 10-7 (A) Reverse current IR Forward current IF (A) 10 -5 10-7 10-9 10-8 10-9 10-10 10-11 10-11 10-12 10-13 10-13 0 0.2 0.4 0.6 0.8 1.0 0 Forward voltage VF (V) 20 40 60 100 Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage 100 100 f=100MHz ( Ω) f=1MHz 10 Forward resistance rf Capacitance C (pF) 80 1.0 0.1 0.1 1.0 10 Reverse voltage VR 100 (V) Fig.3 Capacitance vs. Reverse voltage 10 1.0 10-3 10-2 Forward current IF 10-1 (A) Fig.4 Forward resistance vs. Forward current Rev.0, Feb. 2002, page 3 of 5 HVM189S Package Dimensions As of July, 2001 1.9 ± 0.2 2.8 + 0.2 – 0.6 + 0.2 1.1 – 0.1 0.3 2.8 +– 0.1 0 – 0.1 (0.3) (0.95) (0.95) + 0.10 0.16 – 0.06 (0.65) 1.5 ± 0.15 0.10 3–0.4 +– 0.05 (0.65) Unit: mm Hitachi Code JEDEC JEITA Mass (reference value) Rev.0, Feb. 2002, page 4 of 5 MPAK — Conforms 0.011 g HVM189S Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Feb. 2002, page 5 of 5