HMC322 v01.0907 SWITCHES - CHIP 4 GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10 GHz Typical Applications Features The HMC322 is ideal for: Broadband Performance: DC - 10.0 GHz • Telecom Infrastructure High Isolation: >38 dB@ 4 GHz • Microwave Radio & VSAT Low Insertion Loss: 2.0 dB@ 4 GHz • Military & Space Integrated 3:8 TTL Decoder • Test Instrumentation Small Size: 1.45 x 1.6 x 0.10 mm Functional Diagram General Description The HMC322 is a broadband non-reflective GaAs MESFET SP8T switch chip. Covering DC to 10 GHz, this switch offers high isolation and low insertion loss and extends the frequency coverage of Hittite’s SP8T switch product line. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to three. The switch operates using a negative control voltage of 0/-5V, and requires a fixed bias of -5V. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.5 mm (20 mils) length. Electrical Specifi cations, TA = +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System Parameter 4 - 14 Frequency Insertion Loss DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz DC - 8 GHz DC - 10.0 GHz Isolation (RFC to RF1 - 8) DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz DC - 8 GHz DC - 10.0 GHz Return Loss “On State” DC - 10.0 GHz Return Loss “Off State” DC - 10.0 GHz Min. 40 32 27 20 18 Typ. Max. Units 1.9 2.0 2.1 2.2 2.4 2.3 2.4 2.5 2.6 2.8 dB dB dB dB dB 46 38 32 26 24 dB dB dB dB dB 14 dB 11 dB Input Power for 1 dB Compression 0.5 - 10.0 GHz 19 23 dBm Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone) 0.5 - 10.0 GHz 34 38 dBm Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 10.0 GHz 50 150 ns ns For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC322 v01.0907 GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10 GHz Insertion Loss vs. Temperature Isolation Between RFC and Output Ports 0 RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8 -10 -1 ISOLATION (dB) -2 -3 -30 -40 4 -50 +25 C +85 C -55 C -4 -20 -60 -5 -70 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 FREQUENCY (GHz) Return Loss 5 6 7 8 9 10 9 10 9 10 Isolation Between Output Ports 0 0 -10 RFC RF1-8 ON RF1-8 OFF -5 ISOLATION (dB) RETURN LOSS (dB) 4 FREQUENCY (GHz) -10 -15 -20 -30 SWITCHES - CHIP INSERTION LOSS (dB) 0 -40 -50 -20 -60 -25 -70 0 1 2 3 4 5 6 7 8 9 0 10 1 2 3 FREQUENCY (GHz) 0.1 and 1 dB Input Compression Point 5 6 7 8 Input Third Order Intercept Point 50 THIRD ORDER INTERCEPT (dBm) 28 COMPRESSION POINT (dBm) 4 FREQUENCY (GHz) 26 24 22 1.0 Compression Point 0.1dB Compression Point 20 18 45 40 35 +25 C +85 C -55 C 30 25 1 2 3 4 5 6 7 FREQUENCY (GHz) 8 9 10 1 2 3 4 5 6 7 8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 15 HMC322 v01.0907 Absolute Maximum Ratings Bias Voltage Range (Vee) SWITCHES - CHIP 4 4 - 16 GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10 GHz Control Voltages -7 Vdc Control Voltage Range (A, B, & C) Vee -0.5V to +1 Vdc Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C RF Input Power, 0.5 - 10 GHz +26 dBm State Bias Condition Low -3V to 0 Vdc @ 25 uA Typical High -5 to -4.2 Vdc @ 5 uA Typical Truth Table ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Bias Voltage & Current Vee Range = -5 Vdc ± 10% Control Input Signal Path State A B C RFCOM to: High High High RF1 Low High High RF2 High Low High RF3 Low Low High RF4 High High Low RF5 Low High Low RF6 Vee (Vdc) Iee (Typ.) (mA) Iee (Max.) (mA) High Low Low RF7 -5.0 5.0 9.0 Low Low Low RF8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC322 v01.0907 GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10 GHz Outline Drawing SWITCHES - CHIP 4 Die Packaging Information [1] Standard Alternate WP-3 (Waffle Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. DIMENSIONS IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS 0.004”. 3. TYPICAL BOND PAD IS 0.004” SQUARE. 4. TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED GROUND BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 17 HMC322 v01.0907 GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10 GHz Pad Descriptions SWITCHES - CHIP 4 Pad Number Function Description 1 - 7, 12 - 14 RF1, RFC, RF8 - RF2 These pads are DC coupled and matched to 50 Ohms. Blocking capacitors are required if RF line potential is not equal to 0V. 8 A See truth table and control voltage table. 9 B See truth table and control voltage table. 10 C See truth table and control voltage table. 11 Vee Supply Voltage = -5Vdc ± 10% Die Bottom GND Die bottom must be connected to RF / DC ground. Interface Schematic TTL Interface Circuit (Required for Each Control Input A, B and C) Note: Control inputs A, B, and C can be driven directly with TTL logic with -5 Volts applied to the HCT logic gates Vee pin and to the Vee pad of the RF Switch. 4 - 18 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC322 v01.0907 GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10 GHz Assembly Diagram SWITCHES - CHIP 4 Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and fl at. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 19