HMC313 v02.0703 MICROWAVE CORPORATION GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features Ideal as a Driver & Amplifier for: P1dB Output Power: +14 dBm • 2.2 - 2.7 GHz MMDS Output IP3: +27 dBm • 3.5 GHz Wireless Local Loop Gain: 17 dB • 5.0 - 6.0 GHz UNII & HiperLAN Single Supply: +5V High Reliability GaAs HBT Process Ultra Small Package: SOT26 General Description Functional Diagram The HMC313 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that operates from a single Vcc supply. The surface mount SOT26 amplifier can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313 offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current. The “HMC313 Biasing and Impedance Matching Techniques” application note available within the “Application Notes” section offers recommendations for narrow band operation. Electrical Specifications, TA = +25 °C Vcc = +5V Parameter Units Min. Frequency Range Gain Max. DC - 6 14 Gain Variation Over Temperature Input Return Loss GHz 17 20 dB 0.02 0.03 dB/°C 7 dB Output Return Loss 6 dB Reverse Isolation 30 dB 14 dBm 15 dBm 27 dBm Noise Figure 6.5 dB Supply Current (Icc) 50 mA Output Power for 1 dB Compression (P1dB) @ 1.0 GHz 11 Saturated Output Power (Psat) @ 1.0 GHz Output Third Order Intercept (IP3) @ 1.0 GHz 8 - 68 Typ. 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC313 v02.0703 MICROWAVE CORPORATION GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Gain & Return Loss Gain vs. Temperature 8 25 25 20 S11 S21 S22 5 GAIN (dB) RESPONSE (dB) 10 0 15 10 -5 -10 + 25 C + 85 C - 40 C 5 -15 -20 0 0 1 2 3 4 5 6 0 7 1 2 FREQUENCY (GHz) 3 4 5 6 7 5 6 7 FREQUENCY (GHz) Input & Output Return Loss Reverse Isolation 0 0 AMPLIFIERS - SMT 20 15 ISOLATION (dB) RETURN LOSS (dB) -10 -5 -10 -15 S11 S22 -20 -30 -40 -20 -50 0 1 2 3 4 5 6 7 0 1 2 FREQUENCY (GHz) P1dB vs. Temperature 4 Psat vs. Temperature 25 25 + 25 C + 85 C - 40 C + 25 C + 85 C - 40 C 20 Psat (dBm) 20 P1dB (dBm) 3 FREQUENCY (GHz) 15 10 5 15 10 5 0 0 0 1 2 3 4 FREQUENCY (GHz) 5 6 7 0 1 2 3 4 5 6 7 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 69 HMC313 v02.0703 MICROWAVE CORPORATION GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Output IP3 vs. Temperature Power Compression @ 1.0 GHz 20 40 35 + 25 C + 85 C - 40 C 25 20 15 10 5 0 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 15 10 5 0 -10 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 INPUT POWER (dBm) -2 Power Compression @ 3.0 GHz 15 10 5 0 -5 -10 -22 -20 -18 -16 -14 -12 -10 -8 -6 INPUT POWER (dBm) 8 - 70 Pout (dBm) Gain (dB) PAE (%) -5 20 Pout (dBm), Gain (dB), PAE (%) IP3 (dBm) 30 AMPLIFIERS - SMT Pout (dBm), Gain (dB), PAE (%) 8 Pout (dBm) Gain (dB) PAE (%) -4 -2 0 2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 0 2 4 HMC313 v02.0703 MICROWAVE CORPORATION GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Absolute Maximum Ratings +5.5 Vdc RF Input Power (RFin)(Vcc = +5.0 Vdc) +20 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 3.99 mW/°C above 85 °C) 0.259 W Thermal Resistance (junction to lead) 251 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 8 AMPLIFIERS - SMT Collector Bias Voltage (Vcc) Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 71 HMC313 v02.0703 MICROWAVE CORPORATION GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz AMPLIFIERS - SMT 8 Pin Descriptions Pin Number Function Description 1 RFOUT This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 2, 4-6 GND These pins must be connected to RF/DC ground. Interface Schematic Application Circuit Note: 1. Select Rbias to achieve desired Vcc voltage on Pin 1. 2. External Blocking Capacitors are required on Pins 1 & 3. 3. See “Application Notes” section for HMC313 Application Circuit. 8 - 72 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0703 HMC313 MICROWAVE CORPORATION GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Material Item Description J1 - J2 PC Mount SMA Connector U1 HMC313 PCB* Evaluation PCB 1.5” x 1.5” The circuit board used in the final applicatin should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. *Circuit Board Material: Roger 4350 The “HMC313 Biasing and Impedance Matching Techniques” application note is located in the “Application Notes” section of this Designers’ Guide. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 73