HMC356LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz 8 Typical Applications Features The HMC356LP3 is ideal for basestation receivers: Noise Figure: ≤1.0 dB +38 dBm Output IP3 AMPLIFIERS - SMT • GSM 450 & GSM 480 Gain: 17 dB • CDMA 450 Very Stable Gain vs. Supply & Temperature • Private Land Mobile Radio Single Supply: +5.0V @ 104 mA 50 Ohm Matched Output Functional Diagram General Description The HMC356LP3 high dynamic range GaAs PHEMT MMIC Low Noise Amplifier is ideal for GSM & CDMA cellular basestation and Mobile Radio front-end receivers operating between 350 and 550 MHz. This LNA has been optimized to provide 1.0 dB noise figure, 17 dB gain and +38 dBm output IP3 from a single supply of +5.0V @ 104 mA. Input and output return losses are 15 dB typical, with the LNA requiring only four external components to optimize the RF input match, RF ground and DC bias. The HMC356LP3 shares the same package and pinout with the HMC372LP3 high IP3 LNA. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifier. Electrical Specifications, TA = +25° C, Vs = +5V Parameter Min. Frequency Range Gain 15 Gain Variation Over Temperature Max. Units 350 - 550 MHz 17 dB 0.0032 0.010 dB / °C Noise Figure 1.0 1.4 dB Input Return Loss 17 dB Output Return Loss 12 dB Reverse Isolation 24 dB 21 dBm 22.5 dBm 38 dBm 104 mA Output Power for 1dB Compression (P1dB) 17 Saturated Output Power (Psat) Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) 8 - 118 Typ. 34 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC356LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz Noise Figure vs. Temperature 25 1.5 20 1.4 15 1.3 10 S21 S11 S22 5 0 -5 -10 1 0.9 0.8 0.7 0.6 0.5 0.75 1 1.25 1.5 FREQUENCY (GHz) 1.75 0.5 0.3 2 1.4 18 1.3 NOISE FIGURE (dB) 1.5 19 17 16 +25 C +85 C -40 C 14 13 0.5 0.55 0.6 1 0.9 0.8 0.7 0.6 10 0.4 0.45 0.5 FREQUENCY (GHz) 0.55 +4.5 V +5.0 V +5.5 V 1.1 11 0.35 0.45 1.2 12 0.3 0.4 Noise Figure vs. Vdd 20 15 0.35 FREQUENCY (GHz) Gain vs. Temperature GAIN (dB) 1.1 -20 0.25 +25 C +85 C -40 C 1.2 -15 -25 8 0.5 0.3 0.6 AMPLIFIERS - SMT NOISE FIGURE (dB) RESPONSE (dB) Broadband Gain & Return Loss 0.35 0.4 0.45 0.5 0.55 0.6 0.55 0.6 FREQUENCY (GHz) Gain vs. Vdd Reverse Isolation 20 0 19 -5 18 ISOLATION (dB) GAIN (dB) 17 16 +4.5 V +5.0 V +5.5 V 15 14 13 12 +25 C +85 C -40 C -10 -15 -20 -25 11 10 0.3 -30 0.35 0.4 0.45 0.5 FREQUENCY (GHz) 0.55 0.6 0.3 0.35 0.4 0.45 0.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 119 HMC356LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz 8 GaAs SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz Input ReturnMMIC Loss vs. Temperature Output Return Loss vs. Temperature 0 0 RETURN LOSS (dB) RETURN LOSS (dB) -5 +25 C +85 C -40 C -10 -15 -20 0.3 0.4 0.45 0.5 FREQUENCY (GHz) 0.55 0.6 0.3 25 40 24 COMPRESSION (dBm) 26 41 39 38 37 36 35 +25 C +85 C -40 C 0.4 0.45 0.5 FREQUENCY (GHz) 0.55 0.6 PSAT 23 22 21 20 19 +25 C +85 C -40 C P1dB 18 17 32 0.35 0.4 0.45 0.5 FREQUENCY (GHz) 0.55 16 0.3 0.6 0.4 0.45 0.5 0.55 0.6 P1dB vs. Vdd 26 41 25 40 24 COMPRESSION (dBm) 42 39 38 37 36 35 +4.5 V +5.0 V +5.5 V 34 0.35 FREQUENCY (GHz) Output IP3 vs. Vdd 23 22 21 20 19 +4.5 V +5.0 V +5.5 V 18 33 17 32 0.3 0.35 P1dB & Psat vs. Temperature 33 OUTPUT IP3 (dBm) -15 42 34 8 - 120 -10 -25 0.35 Output IP3 vs. Temperature 0.3 +25 C +85 C -40 C -20 -25 OUTPUT IP3 (dBm) AMPLIFIERS - SMT -5 0.35 0.4 0.45 0.5 FREQUENCY (GHz) 0.55 0.6 16 0.3 0.35 0.4 0.45 0.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 0.55 0.6 HMC356LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz Drain Bias Voltage (Vdd) Typical Supply Current vs. Vdd +8.0 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFin)(Vdd = +5.0 Vdc) +15 dBm +4.5 103 Channel Temperature 150 °C +5.0 104 Continuous Pdiss (T = 85 °C) (derate 14 mW/°C above 85 °C) 0.910 W +5.5 105 Thermal Resistance (channel to ground paddle) 71.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Outline Drawing 8 AMPLIFIERS - SMT Absolute Maximum Ratings NOTES: 1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 121 HMC356LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz AMPLIFIERS - SMT 8 Pin Descriptions Pin Number Function Description Interface Schematic 1, 5, 8, 9,10,12,13,14 N/C No connection necessary. These pins may be connected to RF/DC ground. 2, 4, 6,16 GND These pins and package ground paddle must be connected to RF/DC ground. 3 RF IN This pin is matched to 50 Ohms with a 51 nH inductor to ground. See Application Circuit. 7 ACG AC Ground - An external capacitor of 0.01µF to ground is required for low frequency bypassing. See Application Circuit for further details. 11 RF OUT This pin is AC coupled and matched to 50 Ohms. 15 Vdd Power supply voltage. Choke inductor and bypass capacitor are required. See application circuit. Application & Evaluation PCB Circuit Note 1: Choose value of capacitor C1 for low frequency bypassing. A 0.01 µF ±10% capacitor is recommended. Note 2: L1, L2 and C1 should be located as close to pins as possible. 8 - 122 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC356LP3 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz Evaluation PCB AMPLIFIERS - SMT 8 List of Material Item Description J1 - J2 PC Mount SMA RF Connector J3 - J4 DC Pin C1 10,000 pF Capacitor, 0402 Pkg. C2 10,000 pF Capacitor, 0603 Pkg. L1 51 nH Inductor, 0402 Pkg. L2 36 nH Inductor, 0603 Pkg. U1 HMC356LP3 Amplifier PCB* 106722 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 123