HITTITE HMC263LP4_09

HMC263LP4E
v01.0709
LOW NOISE AMPLIFIERS - SMT
8
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Typical Applications
Features
The HMC263LP4E is ideal for:
Low Noise Figure: 2.2 dB
• Millimeterwave Point-to-Point Radios
High Gain: 20 dB
• LMDS
Single Positive Supply: +3V or +5V
• VSAT
DC Blocked RF I/Os
• SATCOM
No External Matching
24 Lead 4x4mm QFN Package: 16mm2
Functional Diagram
General Description
The HMC263LP4E is a GaAs MMIC Low Noise
Amplifier (LNA) which covers the frequency range
of 24 to 36 GHz and is housed in a leadless plastic
SMT package. The HMC263LP4E utilizes a GaAs
PHEMT process offering 20 dB gain from a single
bias supply of + 3V @ 58 mA with a noise figure of
2.2 dB. The HMC263LP4E may be used in conjunction with HMC264LC3B or HMC265LM3 mixers to
realize a millimeterwave system receiver. The RF I/Os
are DC blocked and matched to 50 Ohms requiring no
external components.
Electrical Specifi cations, TA = +25° C, Vdd = +3V
Parameter
Min.
Frequency Range
Gain
8-2
Typ.
Max.
Min.
24 - 27
19
21
Gain Variation Over Temperature
0.03
Noise Figure
2.0
Typ.
Max.
Min.
27 - 32
27
17
19
23
0.03
3.0
2.2
Typ.
Max.
32 - 36
15
17
GHz
20
0.03
3.0
2.5
Units
dB
dB/°C
4.0
dB
Input Return Loss
12
9
11
Output Return Loss
10
9
9
dB
Output Power for 1 dB Compression (P1dB)
6
8
9
dBm
Saturated Output Power (Psat)
9
11
12
dBm
Output Third Order Intercept (IP3)
16
Supply Current (Idd) (@ Vdd = +3.0V)
58
18
77
58
dB
20
77
58
dBm
77
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC263LP4E
v01.0709
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
26
22
22
18
+25 C
+85 C
- 40 C
18
+25 C
+85 C
- 40 C
14
10
10
18
22
26
30
34
38
18
22
FREQUENCY (GHz)
Input Return Loss @ Vdd = +3V
34
38
34
38
0
+25 C
+85 C
- 40 C
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
30
Input Return Loss @ Vdd = +5V
0
-10
-15
-20
+25 C
+85 C
- 40 C
-5
-10
-15
-20
18
22
26
30
34
38
18
22
FREQUENCY (GHz)
26
30
FREQUENCY (GHz)
Output Return Loss @ Vdd = +3V
Output Return Loss @ Vdd = +5V
0
0
+25 C
+85 C
- 40 C
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
26
FREQUENCY (GHz)
LOW NOISE AMPLIFIERS - SMT
26
14
8
Gain vs. Temperature @ Vdd = +5V
GAIN (dB)
GAIN (dB)
Gain vs. Temperature @ Vdd = +3V
-10
-15
-20
+25 C
+85 C
- 40 C
-5
-10
-15
-20
18
22
26
30
FREQUENCY (GHz)
34
38
18
22
26
30
34
38
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8-3
HMC263LP4E
v01.0709
8
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Noise Figure
vs. Temperature @ Vdd = +3V
Noise Figure
vs. Temperature @ Vdd = +5V
8
+25 C
+85 C
- 40 C
+25 C
+85 C
- 40 C
6
NF (dB)
NF (dB)
6
4
2
4
2
0
0
18
22
26
30
34
38
18
22
FREQUENCY (GHz)
34
38
34
38
0
+25 C
+85 C
- 40 C
+25 C
+85 C
- 40 C
-20
ISOLATION (dB)
-20
-40
-40
-60
-80
-80
18
22
26
30
34
38
18
22
FREQUENCY (GHz)
30
Output P1dB @ Vdd = +5V
16
12
12
P1dB (dBm)
16
8
+25 C
+85 C
- 40 C
4
26
FREQUENCY (GHz)
Output P1dB @ Vdd = +3V
P1dB (dBm)
30
Isolation @ Vdd = +5V
0
-60
8
+25 C
+85 C
- 40 C
4
0
0
18
22
26
30
FREQUENCY (GHz)
8-4
26
FREQUENCY (GHz)
Isolation @ Vdd = +3V
ISOLATION (dB)
LOW NOISE AMPLIFIERS - SMT
8
34
38
18
22
26
30
34
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
38
HMC263LP4E
v01.0709
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
18
14
14
10
+25 C
+85 C
- 40 C
+25 C
+85 C
- 40 C
10
6
2
2
18
22
26
30
34
38
18
22
FREQUENCY (GHz)
26
30
34
38
FREQUENCY (GHz)
Output IP3 @ Vdd = +3V
Output IP3 @ Vdd = +5V
25
20
20
IP3 (dBm)
25
15
+25 C
+85 C
- 40 C
10
15
+25 C
+85 C
- 40 C
10
5
LOW NOISE AMPLIFIERS - SMT
18
6
IP3 (dBm)
8
Psat @ Vdd = +5V
Psat (dBm)
Psat (dBm)
Psat @ Vdd = +3V
5
18
22
26
30
FREQUENCY (GHz)
34
38
18
22
26
30
34
38
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8-5
HMC263LP4E
v01.0709
LOW NOISE AMPLIFIERS - SMT
8
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
+5.5 Vdc
RF Input Power (RFIN)(Vdd = +3 Vdc)
-5 dBm
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 7.7 mW/°C above 85 °C)
0.7 W
Thermal Resistance
(channel to ground paddle)
130 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
HMC263LP4E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating
MSL3
[2]
Package Marking [1]
H263
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
8-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC263LP4E
v01.0709
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Pin Number
Function
Description
1, 2, 4 - 7, 12 - 15,
17 - 19, 24
GND
Package bottom has exposed metal paddle
that must be connected to RF/DC ground.
3
RFIN
This pin is AC coupled
and matched to 50 Ohm.
8 - 11, 21, 23
N/C
Not connected.
16
RFOUT
This pin is AC coupled
and matched to 50 Ohm.
22, 20
Vdd1, Vdd2
Power supply for the 4-stage amplifier.
See application circuit for required external
components.
Interface Schematic
Application Circuit
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
8
Pin Description
8-7
HMC263LP4E
v01.0709
Evaluation PCB
LOW NOISE AMPLIFIERS - SMT
8
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
List of Materials for Evaluation PCB 123965 [1]
Item
Description
J1, J2
PCB Mount K Connector
J3 - J5
DC Pin
C1, C2
100 pF Capacitor, 0402 Pkg.
C3, C4
10 nF Capacitor, 0603 Pkg.
C5, C6
4.7 μF Capacitor, Tantalum
U1
HMC263LP4E
PCB [2]
123963 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25 FR
8-8
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC263LP4E
v01.0709
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
8
LOW NOISE AMPLIFIERS - SMT
Notes:
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8-9