HMC373LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz 8 Typical Applications Features The HMC373LP3 is ideal for basestation receivers: Noise Figure: 0.9 dB +35 dBm Output IP3 AMPLIFIERS - SMT • GSM, GPRS & EDGE Gain: 14 dB • CDMA & W-CDMA Low Loss LNA Bypass Path • Private Land Mobile Radio Single Supply: +5.0 V @ 90 mA 50 Ohm Matched Output Functional Diagram General Description The HMC373LP3 is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for GSM & CDMA cellular basestation frontend receivers operating between 700 and 1000 MHz and provides 0.9 dB noise figure, 14 dB of gain and +35 dBm IP3 from a single supply of +5.0V @ 90 mA. Input and output return losses are 28 and 12 dB respectively with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. By presenting an open or short circuit to a single control line, the LNA can be switched into a low 2.0 dB loss bypass mode reducing the current consumption to 10 µA. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the low noise amplifier. Electrical Specifications, TA = +25° C, Vdd = +5V LNA Mode LNA Mode Bypass Mode Parameter Units Min. Frequency Range Gain Typ. Max. Min. 810 - 960 11.5 Gain Variation Over Temperature Typ. Max. Min. 700 - 1000 13.5 10.5 Typ. Max. 700 - 1000 14 -2.8 MHz -2.0 0.015 0.008 0.015 Noise Figure 0.9 1.3 1.0 1.4 Input Return Loss 28 25 30 dB Output Return Loss 12 11 25 dB Reverse Isolation 20 19 Power for 1dB Compression (P1dB)* 18 21 17 20 0.002 dB 0.008 0.004 dB dB 30 dBm Saturated Output Power (Psat) 22.5 22 Third Order Intercept (IP3)* (-20 dBm Input Power per tone, 1 MHz tone spacing) 35.5 35 50 dBm 90 90 0.01 mA Supply Current (Idd) dBm * P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB and IP3 for Bypass Mode are referenced to RFIN. 8 - 132 dB / °C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC373LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz LNA – Gain, Noise Figure & Power vs. Supply Voltage @ 850 MHz 22 1.2 15 21 1.1 20 1 19 0.9 18 0.8 GAIN (dB), P1dB (dBm) 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 S21 S11 S22 -30 -35 -40 0.25 17 Gain 16 P1dB 0.5 0.75 1 1.25 1.5 1.75 2 0.5 0.4 13 0.3 4.5 0.2 4.75 5 1.4 18 1.3 NOISE FIGURE (dB) 1.5 GAIN (dB) 17 16 15 14 +25 C +85 C -40 C 11 0.75 0.8 +25 C +85 C -40 C 1.2 1.1 1 0.9 0.8 0.7 0.6 0.85 0.9 0.95 0.5 0.7 1 0.75 FREQUENCY (GHz) 1.4 18 1.3 NOISE FIGURE (dB) 1.5 19 GAIN (dB) 17 16 15 14 +4.5 V +5.0 V 11 +5.5 V 0.75 0.8 0.85 0.9 0.95 1 0.95 1 LNA Noise Figure vs. Vdd 20 12 0.8 FREQUENCY (GHz) LNA Gain vs. Vdd 13 5.5 LNA Noise Figure vs. Temperature 19 12 5.25 Vdd (Vdc) 20 13 0.6 14 12 LNA Gain vs. Temperature 10 0.7 Noise Figure 15 FREQUENCY (GHz) 10 0.7 0.7 8 NOISE FIGURE (dB) 20 AMPLIFIERS - SMT LNA Broadband Gain & Return Loss 1.2 1.1 1 0.9 0.8 +4.5 V +5.0 V +5.5 V 0.7 0.6 0.85 0.9 FREQUENCY (GHz) 0.95 1 0.5 0.7 0.75 0.8 0.85 0.9 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 133 HMC373LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz LNA Input Return Loss vs. Temperature LNA Output Return Loss vs. Temperature 0 0 -5 -2 +25 C +85 C -10 RETURN LOSS (dB) RETURN LOSS (dB) -40 C -15 -20 -25 -30 +25 C -4 +85 C -6 -40 C -8 -10 -12 -14 -16 -35 -40 0.7 -18 0.75 0.8 0.85 0.9 0.95 -20 0.7 1 0.75 FREQUENCY (GHz) LNA Output IP3 vs. Temperature 25 39 24 OUTPUT IP3 (dBm) 38 37 36 35 34 32 +25 C +85 C 31 -40 C 30 0.7 0.75 0.8 0.85 0.9 0.95 1 22 21 20 P1dB 19 18 +25 C +85 C -40 C 17 15 0.7 1 0.75 0.8 0.85 0.9 0.95 1 FREQUENCY (GHz) LNA P1dB vs. Vdd 40 25 39 24 +4.5 V +5.0 V +5.5 V 38 37 23 22 P1dB (dBm) OUTPUT IP3 (dBm) 0.95 Psat 16 LNA Output IP3 vs. Vdd 36 35 34 21 20 19 33 18 32 17 31 16 0.75 0.8 0.85 0.9 FREQUENCY (GHz) 8 - 134 0.9 23 FREQUENCY (GHz) 30 0.7 0.85 LNA P1dB & Psat vs. Temperature 40 33 0.8 FREQUENCY (GHz) COMPRESSION POINT (dBm) AMPLIFIERS - SMT 8 0.95 1 15 0.7 +4.5 V +5.0 V +5.5 V 0.75 0.8 0.85 0.9 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 0.95 1 HMC373LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Bypass Mode Broadband Insertion Loss & Return Loss 0 0 +25 C -5 +85 C -40 C -10 RESPONSE (dB) ISOLATION (dB) -5 -10 -15 -20 -15 -20 -25 -30 -25 -30 0.7 S21 S11 S22 -35 0.75 0.8 0.85 0.9 0.95 -40 0.25 1 0.5 FREQUENCY (GHz) 0 -5 -1 -10 RETURN LOSS (dB) INSERTION LOSS (dB) 0 -1.5 -2 -2.5 -3 +25 C +85 C -40 C -4.5 -5 0.7 0.75 0.8 0.85 0.9 1.5 2 0.95 +85 C -40 C -15 -20 -25 -30 -35 -40 -45 -50 0.7 1 0.75 0.8 0.85 0.9 0.95 1 FREQUENCY (GHz) Bypass Mode Output Return Loss vs. Temperature Bypass Mode Input IP3 vs. Temperature 55 0 -5 +25 C +85 C -40 C 50 INPUT IP3 (dBm) -10 -15 -20 -25 45 +25 C +85 C 40 -30 -35 -40 0.7 1.75 +25 C FREQUENCY (GHz) RETURN LOSS (dB) 1.25 Bypass Mode Input Return Loss vs. Temperature -0.5 -4 1 FREQUENCY (GHz) Bypass Mode Insertion Loss vs. Temperature -3.5 0.75 8 AMPLIFIERS - SMT LNA Reverse Isolation vs. Temperature -40 C 0.75 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 35 0.7 0.75 0.8 0.85 0.9 0.95 1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 135 HMC373LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz 8 Absolute Maximum Ratings Drain Bias Voltage (Vdd) AMPLIFIERS - SMT RF Input Power (RFin)(Vdd = +5.0 Vdc) Typical Supply Current vs. Vdd +8.0 Vdc Vdd (Vdc) Idd (mA) +4.5 87 +5.0 90 +5.5 93 LNA Mode +15 dBm Bypass Mode +30 dBm Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 13.5 mW/°C above 85 °C) 0.878 W Thermal Resistance (channel to ground paddle) 74.1 °C/W Truth Table Storage Temperature -65 to +150° C Operating Temperature -40 to +85° C LNA Mode Vctl= Short Circuit to DC Ground Bypass Mode Vctl= Open Circuit Outline Drawing NOTES: 1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. 8 - 136 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC373LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Pin Number Function Description 1, 3, 5, 8, 10, 12, 13, 15, 16 N/C No connection necessary. These pins may be connected to RF/DC ground. 2 RF IN This pin is matched to 50 Ohms with a 19 nH inductor to ground. See Application Circuit. 4 Vctl DC ground return. LNA is in high gain mode when a short circuit is introduced to this pin through an external switch. LNA is in bypass mode when open circuit is introduced 6 ACG An external capacitor of 0.01µF to ground is required for low frequency bypassing. See Application Circuit for further details. 7, 14 GND These pins must be connected to RF/DC ground. 9 Vdd Power supply voltage. Choke inductor and bypass capacitor are required. See application circuit. 11 RF OUT This pin is AC coupled and matched to 50 Ohms. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 AMPLIFIERS - SMT Pin Descriptions 8 - 137 v01.0604 MICROWAVE CORPORATION HMC373LP3 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Evaluation Board Circuit AMPLIFIERS - SMT 8 Note 1: Choose value of capacitor C1 for low frequency bypassing. A 0.01 µF ±10% capacitor is recommended. Note 2: Pin 4 (Vctl) is the DC ground return for the circuit. The LNA is in the high gain mode when a short circuit is introduced to this pin through an external switch. The LNA is in bypass mode when an open circuit is introduced. For the data presented, switching is done through a two position DIP switch (J5) in series with a 2 Ohm resistor (to account for the Ron of an electrical switch). Note 3: L1, L2 and C1 should be located as close to pins as possible. 8 - 138 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC373LP3 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Evaluation PCB AMPLIFIERS - SMT 8 List of Material Item Description J1 - J2 PC Mount SMA RF Connector J3 - J4 DC Pin J5 2 Pos DIP Switch C1 10000 pF Capacitor, 0402 Pkg. C2 10000 pF Capacitor, 0603 Pkg. C3 1000 pF Capacitor, 0402 Pkg. L1 19 nH Inductor, 0402 Pkg. L2 18 nH Inductor, 0603 Pkg. R1 2 Ohm Resistor, 0402 Pkg. U1 HMC373LP3 Amplifier PCB* 107177 Evaluation Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 139 v01.0604 MICROWAVE CORPORATION HMC373LP3 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Application Circuit AMPLIFIERS - SMT 8 Note 1: Choose value of capacitor C1 for low frequency bypassing. A 0.01 µF ±10% capacitor is recommended. Note 2: Pin 4 (Vctl) is the DC ground return for the circuit. The LNA is in the high gain mode when a short circuit is introduced to this pin through an external switch. The LNA is in bypass mode when an open circuit is introduced. For the data presented, switching is done through a two position DIP switch (J5) in series with a 2 Ohm resistor (to account for the Ron of an electrical switch). Note 3: L1, L2 and C1 should be located as close to pins as possible. 8 - 140 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC373LP3 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Notes: AMPLIFIERS - SMT 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 141