HMC382LP3 / 382LP3E v01.0610 AMPLIFIERS - LOW NOISE - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC382LP3 / HMC382LP3E is ideal for: Noise Figure: 1 dB • Cellular/3G Infrastructure Output IP3: +30 dBm • Base Stations & Repeaters Gain: 17 dB • CDMA, W-CDMA, & TD-SCDMA Externally Adjustable Supply Current • GSM/GPRS & EDGE Single Positive Supply: +5V 50 Ohm Matched Input/Output Functional Diagram General Description The HMC382LP3 & HMC382LP3E high dynamic range GaAs PHEMT MMIC Low Noise Amplifiers are ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 1.0 dB noise figure, 17 dB gain and +30 dBm output IP3 from a single supply of +5V. The HMC382LP3 & HMC382LP3E feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. For applications which require improved noise figure, please see the HMC618LP3(E). Electrical Specifi cations, TA = +25° C, Vdd1, Vdd2 = +5V, Rbias = 16 Ohms* Parameter Min. Frequency Range Gain Typ. Max. Min. 1.7 - 1.9 14 Typ. Max. Min. 1.9 - 2.0 17 12 Typ. Max. Min. 2.0 - 2.1 15 11 Typ. Max. 2.1 - 2.2 14 9 GHz 12 dB Gain Variation Over Temperature 0.01 0.015 0.01 0.015 0.01 0.015 0.01 0.015 Noise Figure 1.0 1.3 1.05 1.35 1.15 1.45 1.2 1.5 Input Return Loss 13 12 11 10 dB Output Return Loss 10 13 12 9 dB Reverse Isolation 37 36 35 35 dB Output Power for 1dB Compression (P1dB) 16 16 15.5 14 dBm 29.5 30 30 29.5 dBm 67 67 67 67 mA Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd1 + Idd2) * Rbias resistor value sets current. See application circuit herein. 7-1 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com dB/°C dB HMC382LP3 / 382LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Broadband Gain & Return Loss 7 Gain vs. Temperature 20 +25 C +85 C -40 C 20 10 S21 S11 S22 5 GAIN (dB) RESPONSE (dB) 15 0 16 -5 12 -10 -15 -20 0.5 8 0.75 1 1.25 1.5 1.75 2 2.25 FREQUENCY (GHz) 2.5 2.75 1.6 3 Input Return Loss vs. Temperature 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 0 -3 +25 C +85 C -40 C -5 RETURN LOSS (dB) RETURN LOSS (dB) 1.8 Output Return Loss vs. Temperature 0 -10 -15 +25 C +85 C -40 C -6 -9 -12 -15 -20 1.6 1.7 AMPLIFIERS - LOW NOISE - SMT 24 25 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 1.6 2.3 Reverse Isolation vs. Temperature 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 2.2 2.3 Noise Figure vs. Temperature -15 2 -20 NOISE FIGURE (dB) ISOLATION (dB) 1.6 -25 +25 C +85 C -40 C -30 -35 -40 0.8 +25 C +85 C -40 C 0.4 -45 -50 1.6 1.2 0 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7-2 HMC382LP3 / 382LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Psat vs. Temperature @ Idd = 67 mA 20 20 18 18 Psat (dBm) P1dB (dBm) P1dB vs. Temperature @ Idd = 67 mA 16 14 +25 C +85 C -40 C 12 10 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 Output IP3 vs. Temperature Idd = @ 67 mA 1.9 2 FREQUENCY (GHz) 2.1 1.4 Noise Figure GAIN (dB) & P1dB (dBm) 22 30 28 26 +25 C +85 C -40 C 20 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 Absolute Maximum Ratings 1.2 20 1 18 0.8 16 0.6 12 60 0.4 GAIN P1dB 14 22 0.2 70 80 90 100 110 Typical Supply Current vs. Vdd1 & Vdd2 +8.0 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vs = +5.0 Vdc) +10 dBm +4.5 67.2 Channel Temperature 150 °C 0.451 W Thermal Resistance (channel to ground paddle) 144 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 120 SUPPLY CURRENT (mA) Drain Bias Voltage (Vdd1, Vdd2) Continuous Pdiss (T = 85 °C) (derate 6.94 mW/°C above 85 °C) 2.2 Gain, Noise Figure & P1dB vs. Supply Current @ 1900 MHz 32 IP3 (dBm) 1.8 24 24 7-3 1.7 34 1.7 +25 C +85 C -40 C 14 12 10 1.7 16 NOISE FIGURE (dB) AMPLIFIERS - LOW NOISE - SMT 7 +5.0 67.4 +5.5 67.6 Recommended Bias Resistor Values for Various Idd1 & Idd2 Idd1 + Idd2 (mA) Rbias (Ohms) 60 27 70 16 80 13 100 8.2 120 3.9 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC382LP3 / 382LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST AMPLIFIERS - LOW NOISE - SMT 7 Outline Drawing BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC382LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC382LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 382 XXXX [2] 382 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7-4 HMC382LP3 / 382LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - LOW NOISE - SMT 7 Pin Descriptions Pin Number Function Description 1, 4, 5, 7, 9, 12, 14, 16 N/C No connection necessary. These pins may be connected to RF/DC ground. Performance will not be affected. 2 RFIN This pin is AC coupled and matched to 50 Ohms. 3, 6, 10 GND These pins and package bottom must be connected to RF/DC ground. 8 Res This pin is used to set the DC current of the amplifier by selection of external bias resistor. See application circuit. 11 RFOUT This pin is AC coupled and matched to 50 Ohms. 13,15 Vdd2, Vdd1 Power supply voltage. Choke inductor and bypass capacitors are required. See application circuit. Interface Schematic Application Circuit Note: L1, L2 and C1 should be located as close to pins as possible. 7-5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC382LP3 / 382LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 7 AMPLIFIERS - LOW NOISE - SMT Evaluation PCB List of Materials for Evaluation PCB 112582 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 - J5 DC Pin C1 10 pF Capacitor, 0402 Pkg. C2, C3 1000 pF Capacitor, 0603 Pkg. C4, C5 15000 pF Capacitor, 0603 Pkg. L1 56nH Inductor, 0603 Pkg. L2 18nH Inductor, 0603 Pkg. R1 Resistor, 0402 Pkg. U1 HMC382LP3 / HMC382LP3E Amplifier PCB [2] 112580 Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed ground paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7-6