HMC375LP3 / 375LP3E v01.0604 AMPLIFIERS - SMT 5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC375LP3 / HMC375LP3E is ideal for basestation receivers: Noise Figure: 0.9 dB • GSM, GPRS & EDGE Gain: 17 dB • CDMA & W-CDMA Very Stable Gain vs. Supply & Temperature • DECT Single Supply: +5.0 V @ 136 mA +34 dBm Output IP3 50 Ohm Matched Output Functional Diagram General Description The HMC375LP3 & HMC375LP3E high dynamic range GaAs PHEMT MMIC Low Noise Amplifiers are ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 0.9 dB noise figure, 17 dB gain and +33 dBm output IP3 from a single supply of +5.0V @ 136mA. Input and output return losses are 14 dB typical with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. The HMC375LP3 & HMC375LP3E share the same package with the HMC356LP3 and HMC372LP3 high IP3 LNAs. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifier. Electrical Specifications, TA = +25° C, Vs = +5V Parameter Min. Frequency Range Gain 16.5 Gain Variation Over Temperature Max. Min. Typ. Max. Min. 1.9 - 2.0 18.5 15.5 Typ. Max. Min. 2.0 - 2.1 17.5 15 17 13 Typ. Max. Units 2.1 - 2.2 GHz 15 dB 0.014 0.021 0.014 0.021 0.014 0.021 0.014 0.021 dB/°C Noise Figure 1.0 1.35 0.95 1.2 0.9 1.2 0.9 1.3 dB Input Return Loss 12 13 14 15 dB Output Return Loss 13 16 11 8 dB Reverse Isolation 35 34 34 34 dB 17.5 dBm Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) 5 - 118 Typ. 1.8 - 1.9 16 18.5 16 18.5 15 18 14.5 19.5 19.5 19.5 19.5 dBm Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 1 MHz tone spacing) 34 33.5 33 32.5 dBm Supply Current (Idd) 136 136 136 136 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC375LP3 / 375LP3E v01.0604 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 25 1.5 20 1.4 15 NOISE FIGURE (dB) RESPONSE (dB) 10 5 0 -5 -10 -15 -20 S21 S11 S22 -30 1.2 1.1 1 0.9 0.8 0.7 0.6 -35 0.5 +25 C +85 C -40 C 1.3 -25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 FREQUENCY (GHz) 2.5 2.75 3 Gain vs. Temperature 1.7 1.8 2.1 2.2 2.1 2.2 1.5 1.4 22 NOISE FIGURE (dB) 1.3 20 GAIN (dB) 1.9 2 FREQUENCY (GHz) Noise Figure vs. Vdd 24 18 16 +25 C +85 C -40 C 14 +4.5 V +5.0 V +5.5 V 1.2 1.1 1 0.9 0.8 0.7 12 0.6 10 1.7 5 Noise Figure vs. Temperature AMPLIFIERS - SMT Broadband Gain & Return Loss 0.5 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 Gain vs. Vdd 1.7 1.8 1.9 2 FREQUENCY (GHz) Reverse Isolation vs. Temperature -15 22 21 -20 20 ISOLATION (dB) GAIN (dB) 19 18 17 16 15 -35 -45 13 -50 12 1.7 +25 C +85 C -40 C -30 -40 +4.5 V +5.0 V +5.5 V 14 -25 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2.2 5 - 119 HMC375LP3 / 375LP3E v01.0604 5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 +25 C -40 C +85 C -10 -15 -20 1.9 2 FREQUENCY (GHz) 2.1 2.2 1.7 +25 C +85 C -40 C 37 COMPRESSION (dBm) OUTPUT IP3 (dBm) 2.1 2.2 23 38 36 35 34 33 20 19 18 17 16 15 1.8 1.9 2 FREQUENCY (GHz) 2.1 14 1.7 2.2 +25 C +85 C -40 C 21 31 30 PSAT 22 32 P1dB 1.8 1.9 2 2.1 2.2 2.1 2.2 FREQUENCY (GHz) P1dB vs. Vdd Output IP3 vs. Vdd 40 24 39 23 22 38 OUTPUT P1dB (dBm) +4.5 V +5.0 V +5.5 V 37 36 35 34 33 32 21 20 19 18 17 16 +4.5 V +5.0 V +5.5 V 15 14 31 13 12 30 1.7 1.9 2 FREQUENCY (GHz) 24 39 1.7 1.8 P1dB & PSAT vs. Temperature 40 OUTPUT IP3 (dBm) -15 -25 1.8 Output IP3 vs. Temperature 5 - 120 -10 -20 -25 1.7 +25 C +85 C -40 C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) AMPLIFIERS - SMT 0 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 1.7 1.8 1.9 2 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC375LP3 / 375LP3E v01.0604 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd1, Vdd2) +8.0 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFin)(Vs = +5.0 Vdc) +10 dBm +4.5 135 Channel Temperature 150 °C +5.0 136 +5.5 137 Continuous Pdiss (T = 85 °C) (derate 15.6 mW/°C above 85 °C) 1.015 W Thermal Resistance (channel to ground paddle) 64.1 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 5 AMPLIFIERS - SMT Absolute Maximum Ratings NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC375LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC375LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 375 XXXX [2] 375 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 121 HMC375LP3 / 375LP3E v01.0604 AMPLIFIERS - SMT 5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Pin Descriptions Function Description 1, 3, 4, 6-10, 12, 14, 16 Pin Number N/C No connection necessary. These pins may be connected to RF/DC ground. 2 RFIN This pin is matched to 50 Ohms with a 13 nH inductor to ground. See Application Circuit. 5 ACG AC Ground - An external capacitor of 0.01μF to ground is required for low frequency bypassing. See Application Circuit for further details. 11 RFOUT This pin is AC coupled and matched to 50 Ohms. 13,15 Vdd2, Vdd1 Power supply voltage. Choke inductor and bypass capacitor are required. See application circuit. GND Package bottom must be connected to RF/DC ground. Interface Schematic Application Circuit Note: L1, L2, L3 and C1 should be located as close to pins as possible. 5 - 122 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC375LP3 / 375LP3E v01.0604 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 5 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 107726 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 - J4 DC Pin C1 1000 pF Capacitor, 0402 Pkg. C2, C3 10000 pF Capacitor, 0603 Pkg. L1 13nH Inductor, 0402 Pkg. L2 33nH Inductor, 0603 Pkg. L3 24nH Inductor, 0402 Pkg. U1 HMC375LP3 / HMC375LP3E Amplifier PCB [2] 107514 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 123