MICROWAVE CORPORATION HMC464 v02.0704 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC464 wideband driver is ideal for: +26 dBm P1dB Output Power • Telecom Infrastructure Gain: 16 dB • Microwave Radio & VSAT +30 dBm Output IP3 • Military & Space Supply Voltage: +8.0V @ 290 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 3.12 mm x 1.63 mm x 0.1 mm Functional Diagram General Description The HMC464 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 2 and 20 GHz. The amplifier provides 16 dB of gain, +30 dBm Output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is excellent from 2 - 18 GHz making the HMC464 ideal for EW, ECM and radar driver amplifier applications. The HMC464 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into MultiChip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 2.0 - 6.0 14 Gain Flatness 0.02 Input Return Loss 13 Output Power for 1 dB Compression (P1dB) 16 0.02 11 26.5 26 Max. GHz 14 dB 13 19 dB 0.04 dB/ °C dB 11 dB 22 dBm Saturated Output Power (Psat) 28 27.5 24.5 dBm Output Third Order Intercept (IP3) 32 30 24 dBm Noise Figure 4.0 4.0 6.0 dB Supply Current (Idd) (Vdd= 8V, Vgg1= -0.5V Typ.) 290 290 290 mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical. 1 - 106 Units 18.0 - 20.0 0.03 12 22 Typ. ±0.75 0.03 17 14 23.5 Min. ±0.5 0.03 15 Output Return Loss Max. 6.0 - 18.0 16 ±0.25 Gain Variation Over Temperature Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC464 v02.0704 MICROWAVE CORPORATION GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz 20 15 18 10 16 5 14 S21 0 S11 -5 S22 17 - 25 GHz -10 12 10 8 -15 6 +25C -20 4 -55C -25 2 +85C -30 0 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 FREQUENCY (GHz) Input Return Loss vs. Temperature 12 14 16 18 20 22 0 -5 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) 10 Output Return Loss vs. Temperature 0 +25C +85C -55C -10 -15 -20 -25 -30 +25C +85C -5 -55C -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) 8 10 12 14 16 18 20 22 18 20 22 FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 10 9 +25C +85C -55C -10 -20 +25C +85C -55C 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 8 FREQUENCY (GHz) 1 AMPLIFIERS - CHIP 20 GAIN (dB) RESPONSE (dB) MMIC PUMPED MIXER GainGaAs & Return LossSUB-HARMONICALLY Gain vs. Temperature -30 -40 -50 7 6 5 4 3 2 -60 1 -70 0 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 16 18 20 22 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 107 HMC464 v02.0704 MICROWAVE CORPORATION GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz GaAs MMIC SUB-HARMONICALLY Psat PUMPED MIXER P1dB vs. Temperature vs. Temperature 30 30 28 28 26 26 24 24 Psat (dBm) P1dB (dBm) 22 20 18 16 +25C 12 22 20 18 16 +25C 14 -55C 12 10 10 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 FREQUENCY (GHz) 34 32 30 28 26 24 +25C +85C -55C 20 18 16 0 2 4 6 8 10 12 14 8 10 12 14 16 18 20 16 18 20 22 FREQUENCY (GHz) 32 30 28 26 24 Gain P1dB Psat OIP3 22 20 18 16 14 12 10 7.5 8 8.5 Vdd SUPPLY VOLTAGE (Vdc) Absolute Maximum Ratings 1 - 108 22 Gain, Power & OIP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg 36 22 6 FREQUENCY (GHz) Output IP3 vs. Temperature OIP3 (dBm) 17 - 25 GHz +85C +85C -55C 14 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - CHIP 1 Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +9.0 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) -2.0 to 0 Vdc +7.5 292 Gate Bias Voltage (Vgg2) (Vdd -8.0) Vdc to Vdd +8.0 290 RF Input Power (RFin)(Vdd = +8.0 Vdc) +23 dBm +8.5 288 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 51.5 mW/°C above 85 °C) 4.64 W Thermal Resistance (channel to die bottom) 19.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC464 v02.0704 MICROWAVE CORPORATION GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz Outline Drawing AMPLIFIERS - CHIP 1 NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD Pad Descriptions Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz 2 Vgg2 Gate Control 2 for amplifier. +3V should be applied to Vgg2 for nominal operation. 3 RFOUT & Vdd RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 4 Vgg1 Gate Control 1 for amplifier. Adjust between -2 to 0V to achieve Idd= 290 mA. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 109 HMC464 v02.0704 MICROWAVE CORPORATION GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz Assembly Diagram AMPLIFIERS - CHIP 1 Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. 1 - 110 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0704 MICROWAVE CORPORATION HMC464 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-tosubstrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 1 AMPLIFIERS - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 111