HITTITE HMC448

MICROWAVE CORPORATION
HMC448
v00.0902
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 19 - 25 GHz OUTPUT
FREQ. MULTIPLIERS - CHIP
4
Typical Applications
Features
The HMC448 is suitable for:
Output Power: +11 dBm
• Clock Generation Applications:
SONET OC-192 & SDH STM-64
Wide Input Power Range: -4 to +6 dBm
• Pt to Pt & VSAT Radios
100 KHz SSB Phase Noise: -135 dBc/Hz
• Test Instrumentation
Single Supply: 5V@ 48 mA
• Military & Space
Die Size: 1.16 mm x 1.20 mm x 0.1 mm
Functional Diagram
General Description
Fo, 3Fo Isolation: >20 dBc @ Fout= 20 GHz
The HMC448 die is a x2 active broadband frequency
multiplier chip utilizing GaAs PHEMT technology.
When driven by a 0 dBm signal, the multiplier
provides +11 dBm typical output power from 19 to
25 GHz. The Fo and 3Fo isolations are >22 dBc
up to 22 GHz. This multi-rate frequency multiplier
can be used in the generation of a half rate clock
for 40 Gbps systems or as part of a multiplier chain
to generate a full rate 40 Gbps clock. The HMC448
is also ideal for use in LO multiplier chains for Pt
to Pt & VSAT Radios yielding reduced parts count
vs. traditional approaches. The low additive SSB
Phase Noise of -135 dBc/Hz at 100 kHz offset helps
maintain good system noise performance. All data
is with the chip in a 50 ohm test fixture connected
via 0.076mm x 0.0127mm (3mil x 0.5mil) ribbon
bonds of minimal length 0.31mm (<12mils).
Electrical Specifications, TA = +25° C, Vd1 = Vd2 = 5.0V, 0 dBm Drive Level
Parameter
Min.
Frequency Range, Input
Frequency Range, Output
Output Power
5
Max.
Min.
Typ.
Max.
Units
9.5 - 11.0
11.0 - 12.5
GHz
19 - 22
22 - 25
GHz
12
dBm
9
8
Fo Isolation (with respect to output level)
25
15
dBc
3Fo Isolation (with respect to output level)
25
22
dBc
Input Return Loss
9
6
dB
Output Return Loss
5
5
dB
-135
-135
dBc/Hz
48
48
mA
SSB Phase Noise (100 kHz Offset)
Supply Current (Idd)
4 - 28
Typ.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HMC448
v00.0902
MICROWAVE CORPORATION
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 19 - 25 GHz OUTPUT
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
OUTPUT POWER (dBm)
+25 C
+85 C
-55 C
18
19
20
21
22
23
24
25
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
26
-6 dBm
-4 dBm
-2 dBm
0 dBm
+2 dBm
+4 dBm
+6 dBm
18
19
20
OUTPUT FREQUENCY (GHz)
21
22
23
24
25
4
26
OUTPUT FREQUENCY (GHz)
Output Power vs.
Supply Voltage @ 0 dBm Drive Level
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Isolation @ 0 dBm Drive Level
15
OUTPUT POWER (dBm)
10
Vdd=4.5V
Vdd=5.0V
Vdd=5.5V
5
0
-5
-10
-15
Fo
2Fo
3Fo
-20
-25
18
19
20
21
22
23
24
25
26
18
19
20
OUTPUT FREQUENCY (GHz)
21
22
23
24
OUTPUT FREQUENCY (GHz)
Pin vs. Pout @ 3 Frequencies
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
GHz
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
-1
-2
25
26
FREQ. MULTIPLIERS - CHIP
OUTPUT POWER (dBm)
Output Power vs.
GaAs MMIC
SUB-HARMONICALLY
PUMPED
MIXER
- 25
Output
Power
vs. Drive17
Level
Temperature
@ 0 dBm
Drive Level
Fout=19 GHz
Fout=22 GHz
Fout=25 GHz
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4 - 29
MICROWAVE CORPORATION
HMC448
v00.0902
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 19 - 25 GHz OUTPUT
Output Return Loss vs. Temperature
Input Return Loss vs. Temperature
0
0
OUTPUT RETURN LOSS (dB)
4
INPUT RETURN LOSS (dB)
-2
-3
-6
-9
+25 C
+85 C
-55 C
-12
-4
-6
-8
-10
-12
-14
+25 C
-16
+85 C
-55 C
-18
-15
-20
9
10
11
12
13
18
19
20
21
4 - 30
22
23
24
FREQUENCY (GHz)
SSB Phase Noise Performance,
Fout = 20.4 GHz, Pin = 0 dBm
SSB PHASE NOISE (dBc/Hz)
FREQ. MULTIPLIERS - CHIP
FREQUENCY (GHz)
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
2
10
3
10
4
10
5
10
6
10
7
10
OFFSET FREQUENCY (Hz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
25
26
MICROWAVE CORPORATION
HMC448
v00.0902
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 19 - 25 GHz OUTPUT
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
RF Input (Vcc= +5V)
+20 dBm
Vdd (Vdc)
Idd (mA)
Supply Voltage (Vd1, Vd2)
+6.0 Vdc
4.5
47
Channel Temperature
175 °C
5.0
48
5.5
49
744 mW
Thermal Resistance
(junction to die bottom)
121 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Note: Multiplier will operate over full voltage
range shown above.
4
FREQ. MULTIPLIERS - CHIP
Continuous Pdiss (T= 85 °C)
(derate 8.3 mW/°C above 85 °C)
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE.
4. TYPICAL BOND SPACING IS .006” CENTER TO CENTER.
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METALIZATION: GOLD
7. BACKSIDE METAL IS GROUND.
8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4 - 31
MICROWAVE CORPORATION
HMC448
v00.0902
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 19 - 25 GHz OUTPUT
Pad Description
FREQ. MULTIPLIERS - CHIP
4
4 - 32
Pad Number
Function
Description
1
RF IN
Pin is AC coupled and matched to 50 Ohm
from 9.5 - 12.5 GHz.
2, 3
Vd1, Vd2
Supply voltage 5V ± 0.5V.
4
RF OUT
Pin is AC coupled and matched to 50 Ohm
from 19 - 25 GHz.
GND
Die bottom must be connected to RF ground.
Interface Schematic
Assembly Diagram
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
HMC448
v00.0902
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 19 - 25 GHz OUTPUT
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
4
Mounting
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature
of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip
to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached
directly to the ground plane
eutectically or with conductive
epoxy (see HMC general
Handling, Mounting, Bonding
Note).
3 mil Ribbon Bond
3 mil Ribbon Bond
50 Ohm Microstrip transmission
lines on 0.127mm (5 mil) thick
alumina thin film substrates are
recommended for bringing RF to
and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina
thin film substrates must be
used, the die should be raised
0.150mm (6 mils) so that the
surface of the die is coplanar
with the surface of the substrate.
One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm
(6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
FREQ. MULTIPLIERS - CHIP
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate
spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to
minimize inductance on RF, LO & IF ports.
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive
epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4 - 33