CDD120 Diode-Diode Modules 1 2 3 3 Dimensions in mm (1mm=0.0394") Type 1 2 Symbol IFRMS IFAVM CDD120N08 CDD120N12 CDD120N14 CDD120N16 CDD120N18 VRSM V 900 1300 1500 1700 1900 Test Conditions TVJ=TVJM TC=105oC; 180o sine VRRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 180 120 A IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 2800 3300 2500 2750 A i2dt TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 39200 45000 31200 31300 A2s -40...+150 150 -40...+125 TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s Mounting torque (M5) Terminal connection torque (M5) Typical including screws o C 3000 3600 V~ 2.5-4/22-35 2.5-4/22-35 Nm/lb.in. 90 g DEECorp. CDD120 Diode-Diode Modules Symbol IR Test Conditions TVJ=TVJM; VR=VRRM o Characteristic Values Unit 15 mA VF IF=300A; TVJ=25 C 1.43 V VTO For power-loss calculations only 0.75 V TVJ=TVJM 1.95 m o 170 uC 45 A rT QS TVJ=125 C; IF=50A; -di/dt=6A/us IRM RthJC per diode; DC current per module 0.26 0.13 K/W RthJK per diode; DC current per module 0.46 0.23 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES APPLICATIONS ADVANTAGES * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits DEECorp. CDD120 Diode-Diode Modules Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load 2 x CDD120 DEECorp. CDD120 Diode-Diode Modules Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 3 x CDD120 Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.26 0.28 0.30 0.34 0.38 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.013 0.072 0.175 0.0012 0.047 0.394 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.46 0.48 0.50 0.54 0.58 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.013 0.072 0.175 0.2 0.0012 0.047 0.394 1.32 DEECorp.