PSKD 72 Diode Modules IFRMS IFAVM VRRM Preliminary Data Sheet VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Symbol IFRMS IFAVM IFSM ∫i2dt Type 3 1 TO-240 AA 2 1 Test Conditions TVJ = TVJM TC = 92°C; 180° sine TC = 100°C; 180° sine Maximum Ratings 180 A 113 A 99 A TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t t t t = = = = 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 Hz), Hz), Hz), Hz), sine sine sine sine TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 t t t t = = = = 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 Hz), Hz), Hz), Hz), sine sine sine sine 1700 1950 1540 1800 14 15 11 13 A A A A 450 700 850 400 A 2s A 2s A 2s A 2s -40...+150 150 -40...+125 °C °C °C 3 3000 3600 V~ V~ Features International standard package JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 ● ● ● ● ● Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies ● ● ● VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Weight Mounting torque (M5) Terminal connection torque (M5) Typical including screws Symbol IR Test Conditions TVJ = TVJM; VR = VRRM VF IF = 300 A; TVJ = 25°C 1.6 V VT0 rT For power-loss calculations only TVJ = TVJM 0.8 2.3 V mΩ QS IRM TVJ = 125°C; IF = 50 A, -di/dt = 3 A/µs 170 45 µC A RthJC per per per per 0.35 0.175 0.55 0.275 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s 2 dS dA a 2 PSKD 72/08 PSKD 72/12 PSKD 72/14 PSKD 72/16 PSKD 72/18 TVJ TVJM Tstg RthJK = 2x 180 A = 2x 113 A = 800-1800 V t = 1 min t=1s diode; DC current module diode; DC current module 2.5-4/22-35 Nm/lb.in. 2.5-4/22-35 Nm/lb.in. 90 g Characteristic Values 15 mA other values see Fig. 6/7 Creepage distance on surface Strike distance through air Maximum allowable acceleration ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● ● ● Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 2 ∫i2dt versus time (1-10 ms) Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load Circuit B2 2 x PSKD 72 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3 x PSKD 72 Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180° 120° 60° 30° RthJC (K/W) 0.35 0.37 0.39 0.43 0.47 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.013 0.072 0.265 0.0014 0.062 0.375 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180° 120° 60° 30° RthJK (K/W) 0.55 0.57 0.59 0.63 0.67 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.013 0.072 0.265 0.2 0.0014 0.062 0.375 1.32 POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20