POWERSEM PSKD72

PSKD 72
Diode Modules
IFRMS
IFAVM
VRRM
Preliminary Data Sheet
VRSM
VRRM
V
V
900
1300
1500
1700
1900
800
1200
1400
1600
1800
Symbol
IFRMS
IFAVM
IFSM
∫i2dt
Type
3
1
TO-240 AA
2
1
Test Conditions
TVJ = TVJM
TC = 92°C; 180° sine
TC = 100°C; 180° sine
Maximum Ratings
180
A
113
A
99
A
TVJ = 45°C;
VR = 0
TVJ = TVJM
VR = 0
t
t
t
t
=
=
=
=
10 ms (50
8.3 ms (60
10 ms (50
8.3 ms (60
Hz),
Hz),
Hz),
Hz),
sine
sine
sine
sine
TVJ = 45°C
VR = 0
TVJ = TVJM
VR = 0
t
t
t
t
=
=
=
=
10 ms (50
8.3 ms (60
10 ms (50
8.3 ms (60
Hz),
Hz),
Hz),
Hz),
sine
sine
sine
sine
1700
1950
1540
1800
14
15
11
13
A
A
A
A
450
700
850
400
A 2s
A 2s
A 2s
A 2s
-40...+150
150
-40...+125
°C
°C
°C
3
3000
3600
V~
V~
Features
International standard package
JEDEC TO-240 AA
Direct copper bonded Al2O3 -ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
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Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
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VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
Weight
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws
Symbol
IR
Test Conditions
TVJ = TVJM; VR = VRRM
VF
IF = 300 A; TVJ = 25°C
1.6
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.8
2.3
V
mΩ
QS
IRM
TVJ = 125°C; IF = 50 A, -di/dt = 3 A/µs
170
45
µC
A
RthJC
per
per
per
per
0.35
0.175
0.55
0.275
K/W
K/W
K/W
K/W
12.7
9.6
50
mm
mm
m/s 2
dS
dA
a
2
PSKD 72/08
PSKD 72/12
PSKD 72/14
PSKD 72/16
PSKD 72/18
TVJ
TVJM
Tstg
RthJK
= 2x 180 A
= 2x 113 A
= 800-1800 V
t = 1 min
t=1s
diode; DC current
module
diode; DC current
module
2.5-4/22-35 Nm/lb.in.
2.5-4/22-35 Nm/lb.in.
90
g
Characteristic Values
15 mA
other values
see Fig. 6/7
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
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Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
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Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 2 ∫i2dt versus time (1-10 ms)
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
Circuit
B2
2 x PSKD 72
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Circuit
B6
3 x PSKD 72
Fig. 6 Transient thermal impedance
junction to case (per diode)
RthJC for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJC (K/W)
0.35
0.37
0.39
0.43
0.47
Constants for ZthJC calculation:
i
1
2
3
Rthi (K/W)
ti (s)
0.013
0.072
0.265
0.0014
0.062
0.375
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJK (K/W)
0.55
0.57
0.59
0.63
0.67
Constants for ZthJK calculation:
i
1
2
3
4
Rthi (K/W)
ti (s)
0.013
0.072
0.265
0.2
0.0014
0.062
0.375
1.32
POWERSEM GmbH, Walpersdorfer Str. 53
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20