STD/SDT130 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VDSM V STD/SDT130GK08 900 STD/SDT130GK12 1300 STD/SDT130GK14 1500 STD/SDT130GK16 1700 STD/SDT130GK18 1900 Symbol Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 300 130 A ITSM, IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 5500 5850 4800 5100 A 2 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 151000 142000 115000 108000 A2s TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.5A diG/dt=0.5A/us repetitive, IT=500A 150 non repetitive, IT=500A 500 i dt (di/dt)cr A/us TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us TVJ=TVJM IT=ITAVM 120 60 W PGAV 8 W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 (dv/dt)cr PGM VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA tp=30us tp=500us t=1min t=1s Mounting torque (M6) Terminal connection torque (M6) Typical including screws o C 3000 3600 V~ 2.25-2.75/20-25 4.5-5.5/40-48 Nm/lb.in. 125 g STD/SDT130 Thyristor-Diode Modules, Diode-Thyristor Modules Symbol Test Conditions Characteristic Values Unit 10 mA IT, IF=300A; TVJ=25 C 1.36 V For power-loss calculations only (TVJ=125oC) 0.8 V IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO o 1.5 rT VGT IGT VGD o m VD=6V; TVJ=25 C TVJ=-40oC 2.5 2.6 V VD=6V; TVJ=25oC TVJ=-40oC 150 200 mA TVJ=TVJM; VD=2/3VDRM 0.2 V 10 mA IGD o IL TVJ=25 C; tp=30us; VD=6V IG=0.5A; diG/dt=0.5A/us 300 mA IH TVJ=25oC; VD=6V; RGK= 200 mA 2 us 150 us 550 uC 235 A o tgd TVJ=25 C; VD=1/2VDRM IG=0.5A; diG/dt=0.5A/us tq TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM QS TVJ=TVJM; IT, IF=300A; -di/dt=50A/us typ. IRM RthJC per thyristor/diode; DC current per module 0.23 0.115 K/W RthJK per thyristor/diode; DC current per module 0.33 0.165 K/W dS Creeping distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES APPLICATIONS ADVANTAGES * International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~ * Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits STD/SDT130 Thyristor-Diode Modules, Diode-Thyristor Modules 106 4000 ITSM i2 t A A 2s 3000 50 Hz 80 % VRRM TVJ = 45°C TVJ = 125°C 105 2000 TVJ = 45°C TVJ = 125°C 1000 0 0.001 104 0.01 0.1 s 1 1 Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration ms 1 t 0 t Fig. 2 i2t versus time (1-10 ms) Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 2a Maximum forward current at case temperature Fig. 4 Gate trigger characteristics 3 x STD/SDT130 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Gate trigger delay time STD/SDT130 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 3 x STD/SDT130 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.230 0.244 0.255 0.283 0.321 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.0095 0.0175 0.203 0.001 0.065 0.4 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.330 0.344 0.355 0.383 0.421 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.0095 0.0175 0.203 0.1 0.001 0.065 0.4 1.29