IXYS MDD310-16N1

MDD 310
IFRMS = 2x 480 A
IFAVM = 2x 305 A
VRRM = 800-2200 V
High Power
Diode Modules
3
VRSM
VRRM
V
V
900
1300
1500
1700
2100
2300
800
1200
1400
1600
2000
2200
3
Type
1
2
2
1
MDD 310-08N1
MDD 310-12N1
MDD 310-14N1
MDD 310-16N1
MDD 310-20N1
MDD 310-22N1
Symbol
IFRMS
IFAVM
Test Conditions
TVJ = TVJM
TC = 100°C; 180° sine
Maximum Ratings
480
A
305
A
IFSM
TVJ = 45°C;
VR = 0
TVJ = TVJM
VR = 0
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
11 500
12 200
9 600
10 200
A
A
A
A
TVJ = 45°C
VR = 0
TVJ = TVJM
VR = 0
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
662 000
620 000
460 000
430 000
A2s
A2s
A2s
A2s
-40...+150
150
-40...+125
°C
°C
°C
3000
3600
V~
V~
Features
Direct copper bonded Al2O3 -ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
●
●
òi2dt
Md
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t=1s
Weight
Mounting torque (M5)
Terminal connection torque (M8)
Typical including screws
Symbol
IRRM
Test Conditions
TVJ = TVJM; VR = VRRM
VF
IF = 600 A; TVJ = 25°C
VT0
rT
For power-loss calculations only
TVJ = TVJM
RthJC
per diode; DC current
per module
per diode; DC current
per module
RthJK
●
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
●
TVJ
TVJM
Tstg
VISOL
●
2.5-5/22-44 Nm/lb.in.
12-15/106-132 Nm/lb.in.
320
g
●
●
●
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
●
●
●
●
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
40 mA
other values
see Fig. 6/7
1.2
V
0.75
0.63
V
mW
0.129
0.065
0.169
0.0845
K/W
K/W
K/W
K/W
QS
IRM
TVJ = 125°C, IF = 400 A; -di/dt = 50 A/ms
760
275
mC
A
dS
dA
a
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s2
20
12
© 2000 IXYS All rights reserved
Threaded spacer for higher Anode/Cathode
construction: Type ZY 250, material brass
936
14
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
1-3
MDD 310
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 òi2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
© 2000 IXYS All rights reserved
2-3
MDD 310
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
0.15
Fig. 6 Transient thermal impedance
junction to case (per diode)
30°
DC
K/W
RthJC for various conduction angles d:
ZthJC
d
0.10
DC
180°
120°
60°
30°
0.05
RthJC (K/W)
0.129
0.131
0.132
0.132
0.133
Constants for ZthJC calculation:
i
0.000
10-3
10-2
10-1
100
101
102
s
t
0.20
30°
DC
0.0035
0.0165
0.1091
0.0099
0.168
0.456
RthJK for various conduction angles d:
0.15
d
DC
180°
120°
60°
30°
0.10
RthJK (K/W)
0.169
0.171
0.172
0.172
0.173
Constants for ZthJK calculation:
0.05
i
0
0.00
10-3
ti (s)
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
K/W
ZthJK
1
2
3
Rthi (K/W)
10-2
10-1
100
101
s
102
ti (s)
0.0035
0.0165
0.1091
0.04
0.0099
0.168
0.456
1.36
838
t
1
2
3
4
Rthi (K/W)
© 2000 IXYS All rights reserved
3-3