KPD1203K Si Photodiode Features K1 KPD1203K • Transparent epoxy potting Transparent epoxy resin • High sensitivity ø4.2 2.0 • Unbiased for low frequency or biased for high frequency measurement 3.0±0.3 • Broad directivity 13.5 Applications • Optical switches • Optical encoders ø0.45 • Pulse detectorS 2.54 • Sensors and industrial controls ø5.7 max Maximum ratings Item 1 Symbol Units Value Reverse Voltage VR 15 V Reverse Current IR 500 µA Forward Current IF 60 mA Operating Temperature Top -20 ~ +100 ˚C Storage Temperature Tstg -30 ~ +100 ˚C 45˚ 1 2 TO-18 1 1 Anode 2 Cathode (Units: mm) Characteristics (Ta=25 ˚C unless otherwise noted.) Parameter Active Dia. Operating Voltage Symbol Min. Typ. Max. Units D 0.92x0.92 mm VR0 0 5 V Test Conditions For low frequency For high frequency lP=Peak wavelength l 450 950(lp) Vop 320 400 mV Short Circuit Current Ish 4 9 µA Dark Current Id 0.1 1 nA VR=5V Capacitance C 50 60 pF V = 0, f = 1MHz ns VR=5V, l=780nm, RL=50Ω MHz VR=5V, l=780nm, RL=50Ω Sensitive Wavelength Open Circuit Voltage 1100 nm 1000lux(@2856K) tr 8 10 Rise/Fall Time tf 27 35 Cutoff Frequency fc 10 15 Kyosemi Corporation KPD1203K Dark Current-Reverse Voltage (Ta=25˚C) CV Charastaristics 10-8 80 Capacitance (pF) Dark Current (A) 70 10-9 10-10 10-11 60 50 40 30 20 10 10-12 0 5 10 0 15 0 5 Bias (V) Spectral Sensitivity 10 80 Relative Gain (dB) Relative Sensitivity (%) 15 Frequency Response 100 60 40 20 0 -3dB -10 -20 -30 0 400 600 800 1000 Wave length (nm) 1200 Photocurrent-Illuminance (Ta=25˚C) 105 10 6 10 7 Frequency (Hz) Dark Current -Ambient Temperature (VR =10V) 10 3 5 Dark Current ID (A) 10 2 10 1 10 0 1203K 10-1 10-2 0 -5 10 10-3 10-2 10-1 10 0 10 1 10 2 10 3 Illuminance L (lux) -15 10 4 -30 Relative Sensitivity (%) Photocurrent Ish (µA) 10 Bias (V) -25 0 25 50 75 100 Ambient Temperature Ta (˚C) -20 Directivity -10 0 +10 +20 100 -40 -50 +30 +40 +50 50 -60 +60 -70 +70 1203K -80 -90 Kyosemi Corporation 0 Angle (deg.) +80 +90