ETC TH8080JDC

TH8080
Single LIN Bus Transceiver
Features and Benefits
Pin Diagram
Single wire LIN transceiver
Compatible to LIN Protocol Specification, Rev. 1.1
Compatible to ISO9141 functions
SOIC8NB
RxD
1
8
N.C.
Up to 20 kbps bus speed
N.C.
2
7
VS
Low RFI due to slew rate control
VCC
3
6
BUS
Fully integrated receiver filter
Protection against load dump, jump start
TxD
4
5
GND
Bus terminals proof against short-circuits and transients in the
automotive environment
Very low (30 µA) typical power consumption in recessive state and therefore no sleep mode necessary
Thermal overload and short circuit protection
High impendance Bus pin in case of loss of ground and undervoltage condition
8-pin SOIC
±4kV ESD protection on Bus pin
TH8080
Ordering Information
Part No.
Temperature Range
Package
TH8080 JDC
-40ºC...125ºC
SOIC8, 150mil
General Description
The TH8080 is a physical layer device for a single wire
Because of the very low current consumption of the
data link capable of operating in applications where high
TH8080 in the recessive state it’s particularly suitable for
data rate is not required and a lower data rate can
ECU applications with hard standby current require-
achieve cost reductions in both the physical media com-
ments , whereby no sleep/wake up control due to the
ponents and in the microprocessor which use the net-
microprocessor is necessary.
work. The TH8080 is designed in accordance to the
physical layer definition of the LIN Protocol Specification , Rev. 1.1 . The IC furthermore can be used in
ISO9141 systems.
Target Data Sheet Rev 1.0 November 2000
Page 1
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TH8080
Single LIN Transceiver
Functional Diagram
VS
internal Supply
&
References
VCC
Biasing &
Bandgap
Thermal
Protection
POR
SLEW RATE
BUS Driver
TxD
BUS
GND
RxD
Receive
Comparator
Input
Filter
Figure 1 - Block Diagram
Target Data Sheet Rev 1.0 Nov. 2000
Page 2
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TH8080
Single LIN Transceiver
Application Circuit
Car Battery
VBAT
LIN BUS
1N4001
2.2uF
MASTER
ECU
Voltage regulator
100nF
VBAT
+5V
100nF
optional
10
100nF
100nF
100p
VS
VCC
33µH
RxD
BUS
µP
ECU connector to
Single Wire LIN Bus
TH8080
TxD
GND
GND
1N4001
2.2uF
VBAT
SLAVE
ECU
Voltage regulator
100nF
VBAT
+5V
optional
10
100nF
100nF
100p
100nF
VS
VCC
33µH
RxD
µP
TH8080
TxD
82pF
GND
GND
ECU connector to
Single Wire LIN Bus
BUS
Figure 2 - Application Circuit
Target Data Sheet Rev 1.0 Nov. 2000
Page 3
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TH8080
Single LIN Transceiver
Electrical Specification
All voltages are referenced to ground (GND). Positive
currents flow into the IC. The absolute maximum ratings
given in the table below are limiting values that do not
lead to a permanent damage of the device but exceeding
any of these limits may do so. Long term exposure to limiting values may affect the reliability of the device. Reliable operation of the TH8080 is only specified within the
limits shown in ”Operating conditions”.
Operating Conditions
Parameter
Symbol
Min
Max
Unit
Battery voltage
VS
6
20
V
Supply voltage
VCC
4.5
5.5
V
Operating ambient temperature
TA
-40
+125
°C
Junction temperature [1]
TJc
+150
°C
Absolute Maximum Ratings
Parameter
Symbol Conditions
Min.
Max.
Unit
Batterry Supply Voltage
VS
-0.3
+27
V
Supply Voltage
VCC
-0.3
+7
V
Short-term supply voltage
VS.ld
Load dump; t<500ms
+40
V
Transient supply voltage
VS.tr1
ISO 7637/1 pulse 1[1]
Transient supply voltage
VS.tr2
ISO 7637/1 pulses 2[1]
Transient supply voltage
VS.tr3
ISO 7637/1 pulses 3A, 3B
BUS voltage
VBUS
Transient bus voltage
VBUS.tr1
ISO 7637/1 pulse 1 [2]
Transient bus voltage
VBUS.tr2
ISO 7637/1 pulses 2 [2]
Transient bus voltage
VBUS.tr3
ISO 7637/1 pulses 3A, 3B [2]
DC voltage on pins TxD, RxD
VDC
-150
V
+100
V
-150
+150
V
-40
+40
V
-150
V
+100
V
-150
+150
V
-0.3
+7
V
ESDBUSHB
Human body model, equivalent
to discharge 100pF with 1.5kΩ
-4
+4
kV
ESD capability of any other pins
ESDHB
Human body model, equivalent
to discharge 100pF with 1.5kΩ
-2
+2
kV
Maximum latch – up free current at any Pin
ILATCH
-500
+500
mA
ESD capability of pin BUS
Maximum power dissipation
Ptot
At Tamb = +125 °C
197
mW
Thermal impedance
ΘJA
in free air
152
K/W
Storage temperature
Tstg
-55
+150
°C
Junction temperature
Tvj
-40
+150
°C
______________________________
[1]
[2]
ISO 7637 test pulses are applied to VS via a reverse polarity diode and >1uF blocking capacitor .
ISO 7637 test pulses are applied to BUS via a coupling capacitance of 1 nF.
Target Data Sheet Rev 1.0 Nov. 2000
Page 4
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TH8080
Single LIN Transceiver
Static Characteristics
(VS = 6 to 20V, VCC= 4.5 to 5.5V, TA = -40 to +125°C, unless otherwise specified)
All voltages are referenced to ground (GND), positive currents are flow into the IC.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
PIN VS,VCC
Supply current, dominant
ISd
VS = 16V,VCC = 5.5V TxD=L
tbd
50
µA
Supply current, dominant
ICCd
VS = 16V,VCC = 5.5V TxD=L
tbd
1
mA
Supply current, recessive
ISr
VS = 16V,VCC = 5.5V TxD open
8
20
µA
Supply current, recessive
ICCr
VS = 16V,VCC = 5.5V TxD open
20
30
µA
1.2
V
PIN BUS / TRANSMITTER
Bus output voltage, dominant
Vol_BUS
TxD=L , IBUS = 40mA
Bus output voltage, recessive
Voh_BUS
VS = 8...18V, TxD open
Bus short circuit current
IBUS_SHORT
0.8* VS
V
TxD=L , VBUS > 2.5V
40
130
mA
Bus input current, recessive
IBUS_leakp
TxD open ,VBUS = 18V
-20
20
µA
Bus reverse polarity current, re-
IBUS_leakn
TxD open ,VBUS = -18V
-1
1
mA
Bus pull up resistor
RBUS_pu
47
kΩ
20
30
0.4x VS
0.45* VS
PIN BUS / RECEIVER
Bus input threshold, recessive
to dominant
VihBUS_rd
TxD open ,
-18V<VBUS < VihBUS_rd
Bus input threshold, dominant to
recessive
VihBUS_rd
TxD open ,
VihBUS_rd <VBUS < 18V
Bus input hysteresis
VBUS_hys
0.55* VS
V
0.6*VS
20
V
mV
PIN TXD
High level input voltage
Vih
Rising edge
Low level input voltage
Vil
Falling edge
0.7* VCC
0.3* VCC
V
V
TxD pull up current, high level
IIH_TXD
VTxD = 4V
-125
-50
-25
µA
TxD pull up current, low level
IIH_TXD
VTxD = 1V
-500
-250
-100
µA
Low level output voltage
Vol_rxd
IRxD = 1.25mA
0.9
V
High level output voltage
Voh_rxd
IRxD = -250µA
PIN RXD
VCC -0.9
V
Thermal protection
Tsd [1]
Thermal shutdown
Hysteresis
Thys
[1]
150
180
°C
5
25
°C
______________________________
[1]
Thresholds not tested in production, guaranteed by design, only switch on/off tested .
Target Data Sheet Rev 1.0 Nov. 2000
Page 5
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TH8080
Single LIN Transceiver
Dynamic Characteristics
All dynamic values of the table below refer to the test-schematic schown in Figure - Timing Diagram
(6V ≤ VS ≤ 20V, -40°C ≤ TA ≤ 125°C, unless otherwise specified)
Parameter
Symbol
Conditions
Slew rate falling edge
tSRF
80% < VBUS < 20% ,
minimum & maximum bus
load
Slew rate rising edge
tSRR
20% < VBUS < 80% ,
minimum bus load [1]
Min
Typ
Max
Unit
-2.5
-1.7
-1
V/µs
1
1.7
2.5
V/µs
Propagation delay transmitter
( TxD->BUS)
ttrans_pdf
TxD high to low transition[2]
4
µs
Propagation delay transmitter
( TxD->BUS)
ttrans_pdr
TxD low to high transition[2]
4
µs
Propagation delay transmitter
symmetry
ttrans_sym
Calculate ttrans_pdf - ttrans_pdr
2
µs
-2
Propagation delay receiver
( BUS->RxD)
trec_pdf
BUS recessive to dominant [2]
6
µs
Propagation delay receiver
( BUS->RxD)
trec_pdr
BUS dominant to recessive[2]
6
µs
Propagation delay receiver
symmetry
trec_sym
Calculate ttrans_pdf - ttrans_pdr
-2
2
µs
Receiver debounce time
trec_deb
BUS rising & falling edge[3]
1.2
3.1
µs
______________________________
[1]
Minimum slew rate of the rising edge is determined by the network time constant
[2]
See timing diagram figure 3
[3]
See timing diagram figure 4
Target Data Sheet Rev 1.0 Nov. 2000
Page 6
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TH8080
Single LIN Transceiver
Timing Diagrams
VTxD
50%
t
tTrans_pdf
tTrans_pdr
VBUS
60%
40%
t
tRec_pdf
tRec_pdr
VRxD
50%
t
Figure 3 - Input/Output Timing
t < trec_deb
t < trec_deb
VBUS
60%
40%
t
VRxD
50%
t
Figure 4 - Receiver Debouncing Filter
Target Data Sheet Rev 1.0 Nov. 2000
Page 7
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TH8080
Single LIN Transceiver
Test Circuit for Dynamic Characteristics
VSUP
100n
VCC
100n
900
BUS
TxD
GND
RxD
Cload[1]
20p
TH8080
[1]
Cmin = 500pF / Cmax =10nF
Figure 5 - Test Circuit for Dynamic Characteristics
100n
VSUP
VCC
BUS
TxD
GND
RxD
100n
900
1nF
Oszi
TH8080
Schaffnergenerator
Pulse 3a,3b
12V
Pulse 1,2,4
Figure 6 - Test Circuit for Automotive Transients
Target Data Sheet Rev 1.0 Nov. 2000
Page 8
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TH8080
Single LIN Transceiver
Pin Description
RxD
1
8
INH
EN
2
7
VS
TH8082
Pin
Name
1
RXD
2
N.C.
3
VCC
4
TXD
5
GND
6
BUS
7
VS
8
N.C.
VCC
3
6
BUS
TxD
4
5
GND
I/O
O
Function
Receive data from BUS to core, LOW in dominant state
5V supply input
I
Transmit data from core to BUS, LOW in dominant state
Ground
I/O
Target Data Sheet Rev 1.0 Nov. 2000
Single wire bus pin, LOW in dominant state
Battery input voltage
Page 9
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TH8080
Single LIN Transceiver
Mechanical Specifications
SOIC8 Package Dimensions
Small Outline Integrated Circiut (SOIC),
SOIC 8, 150 mil
All Dimension in mm, coplanarity < 0.1 mm
D
E
H
A
A1
min
4.8
3.80
10.00
5.80
0.10
max
5.0
4.00
10.65
6.20
0.25
e
1.27
b
L
α
0.33
0.40
0°
0.51
1.27
8°
0.013
0.016
0°
0.020
0.050
8°
All Dimension in inch, coplanarity < 0.004”
min
0.189
0.150
0.228
0.053
0.004
max
0.197
0.157
0.244
0.069
0.010
Target Data Sheet Rev 1.0 Nov. 2000
Page 10
0.050
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TH8080
Single LIN Transceiver
Target Data Sheet Rev 1.0 Nov. 2000
Page 11
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TH8080
Single LIN Transceiver
For the latest version of this document, go to our website at:
www.melexis.com
Or for additional information contact Melexis direct:
Europe
Phone:
+32 13 67 04 95
E-mail:
[email protected]
All other locations
Phone:
+1 603 223 2362
E-mail:
[email protected]
Important Notice
Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its Term of Sale. Melexis makes no warranty,
express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent
infringement. Melexis reserves the right to change specifications and prices at any time and without notice. Therefore, prior to designing this product into
a system, it is necessary to check with Melexis for current information. This product is intended for use in normal commercial applications. Applications
requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical life-support or lifesustaining equipment are specifically not recommended without additional processing by Melexis for each application.
The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be liable to recipient or any third party for any
damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or
consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical data herein. No obligation or
liability to recipient or any third party shall arise or flow out of Melexis’ rendering of technical or other services.
© 2000 Melexis GmbH. All rights reserved.
Target Data Sheet Rev 1.0 Nov. 2000
Page 12
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