UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application. □ FEATURES o 4.8 Volt operation o P1dB 28 dBm @f=900MHz o Power gain 8.5 dB @f=900MHz PIN CONFIGURATION PIN NO SYMBOL 1 E emitter o Hand-held radio equipment in common 2 B base emitter class-AB operation in 900 MHz 3 E emitter communication band. 4 C collector □ APPLICATIONS DESCRIPTION □ MAXIMUM RATINGS SYMBOL PARAMETER CONDITION VALUE Unit VCBO Collector-Base Voltage Open Emitter 20 V VCEO Collector-Emitter Voltage Open Base 8 V VEBO Emitter-Base Voltage Open Collector 4 V Ic Collector Current (DC) 350 mA PT Total Power Dissipation 1 W TSTG Storage Temperature -65 ~ 150 ℃ TJ Operating Junction Temperature 150 ℃ www.tachyonics.co.kr Ts = 60℃ ; note 1 - 1/7 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1401 □ THERMAL CHARACTERISTICS SYMBOL Rth j-s CONDITION VALUE Unit PT=1W; Ts=60℃;note1 55 K/W PARAMETER thermal resistance from junction to soldering point * Note 1. Ts is temperature at the soldering point of the collector pin. □ QUICK REFERENCE DATA RF performance at Ts ≤ 60 ℃ in common emitter test circuit (see Fig 8.) Mode of Operation f [MHz] VCE [V] PL [mW] GP [dB] ηC [%] CW, class-AB 900 4.8 600 ≥7 ≥ 60 www.tachyonics.co.kr - 2/7 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1401 □ DC CHARACTERISTICS Tj=25 ℃ unless otherwise specified SYMBOL PARAMETER CONDITION MIN. MAX. UNIT BVCBO collector-base breakdown voltage open emitte 20 V BVCEO collector-emitter breakdown voltage open base 8 V BVEBO emitter-base breakdown voltage open collector 3 V IS collector leakage current 0.1 mA DC current gain 60 hFE CCB 4.5 collector capacitance 160 pF 6 Hfe 140 Cc [pF] 120 5 100 4 80 60 3 40 20 2 0 0.00 0 0.10 0.20 0.30 0.40 2 4 0.50 Ic(A) 8 10 VCB [V] f=900MHz; VCE=4.8V; ICQ=5mA; Ts < 60℃ VCE = 4.8V ; Tj =25℃ Fig 1. DC Current gain v.s Collector current 6 Fig 2. Collector-base capacitance v.s Collectorbase voltage(DC) www.tachyonics.co.kr - 3/7 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1401 □ APPLICATION INFORMATION (I) RF performance at Ts ≤ 60 ℃ in common emitter test circuit (see Fig 7) Mode of Operation f [MHz] VCE [V] PL [mW] GP [dB] ηC [%] CW, class-AB 900 4.8 600 ≥7 70 10 30 100 η C [%] Gp [dB] 8 80 26 PL [dBm] 22 6 60 18 4 40 14 10 2 20 0 6 2 0 8 12 17 21 25 28 0 30 4 8 12 16 24 Pin[dBm] PL[dBm] f=900MHz; VCE=4.8V; ICQ=5mA; Ts < 60℃ f=900MHz; VCE=4.8V; ICQ=5mA; Ts < 60℃ Fig 3. Power gain and collector efficiency v.s load power (typical value) ● 20 Fig 4. Load power v.s input power (typical value) Typical Large Signal Impedance VCE = 4.8V, ICQ = 5mA, Pout = 28dBm Freq.[MHz] 800 820 840 860 880 900 920 940 960 980 1000 www.tachyonics.co.kr Γsource Mag 0.615 0.631 0.65 0.666 0.682 0.698 0.711 0.724 0.735 0.746 0.760 Γload Ang -162.5 -164.0 -165.9 -167.6 -169.5 -171.2 -172.7 -174.5 -175.9 -177.6 -179.3 - 4/7 - Mag 0.460 0.478 0.494 0.509 0.524 0.538 0.550 0.563 0.578 0.593 0.600 Ang 161.4 159.6 158.0 156.2 154.0 151.9 150.0 147.3 145.0 142.8 140.3 Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1401 □ APPLICATION INFORMATION (II) RF performance at Ts ≤ 60 ℃ in common emitter configuration. (ICQ = 5mA) Mode of Operation f [MHz] VCE [V] PL [mW] GP [dB] ηC [%] CW, class-AB 450 4.8 630 ≥ 14 ≥ 60 DRF1401 Input/Load Impedance as a frequency Freq. Zin Transister Impedance ZL [MHz] rin xin RL ZL 400 8.35 -3.34 23.32 4.19 450 7.38 -7.19 20.24 9.95 500 6.80 -11.03 18.27 16.37 550 6.74 -14.89 17.30 23.65 600 7.03 -18.92 17.05 32.08 ZL Zin 20 35 Zin 15 [Ω] 10 ZL 30 [Ω] rin 25 5 RL 20 0 15 -5 xin 10 -10 XL -15 5 -20 350 0 350 450 550 650 450 Freq [MHz] 650 Freq [MHz] Fig 5. Input Impedance (series components) as Fig 6. Load Impedance (series components) as a freq, typical values. www.tachyonics.co.kr 550 a freq, typical values. - 5/7 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1401 Unit : mm Part List C1, C11 100nF C2, C10 1nF 53 C3, C4, C8, C9 DRF1401 100pF C5 6pF C7 4pF R1 2.2Ω R2, R3 10Ω L1, L2 50nH 119 Fig 7. Test Circuit Board Layout @ f = 900MHz Test board : FR4 glass epoxy board, dielectric constant = 4.5, thickness = 0.8 mm Test condition : CW test, VCC = 4.8 V, ICQ = 5 mA, frequency = 900 MHz. 90Ω, λ/4 @900 MHz 90Ω, λ/4 @900 MHz DRF1401 Fig 8. Test Circuit Schematic Diagram @f = 900MHz www.tachyonics.co.kr - 6/7 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1401 □ PACKAGE DIMENSION Fig 9. SOT-223 Package dimension www.tachyonics.co.kr - 7/7 - Sep-03-2002 2nd Edition