BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM : 0.2 W (Temp. = 25˚C) Collector Current ICM : 0.1A Collector-base Voltage V(BR)CBO : 50/-50 V Operating & Storage Junction Temperature TJ, TSTG : -55˚C~+150˚C C1 MARKING B2 E2 7P E1 B1 C2 ABSOLUTE MAXIMUM RATINGS OF TR1 at Ta = 25°C SYMBOL VALUE UNITS Collector to Base Voltage PARAMETER VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 6 V Collector Currrent – Continuous IC 100 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS OF TR1 (NPN Transister) at Ta = 25°C CHARACTERISTIC TEST CONDITION SYMBOL MIN. Collector-Base Breakdown Voltage IC=10μA, IE=0 V(BR)CBO 50 V Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 V(BR)CEO 45 V Emitter-Base Breakdown Voltage IE=1μA, IC=0 V(BR)EBO 6 V Collector Cutoff Current VCB=30V, IE=0 ICBO 15 nA Emitter Cutoff Current VEB=5V, IC=0 IEBO 15 nA DC Current Gain VCE=5V, IC=2mA hFE IC=10mA, IB=0.5mA VCE(sat) 0.25 V IC=100mA, IB=5mA VCE(sat) 0.6 V IC=10mA, IB=0.5mA VBE(sat) 0.7 V IC=100mA, IB=5mA VBE(sat) 0.9 V IC=10mA, VCE=5V VBE(On) IC=10mA, VCE=5V Collector Output Capacitance Collector-emitter Saturation Voltage Base-Emitter Saturation Voltage TYP. 200 UNIT 450 0.7 V VBE(On) 0.72 V VCB=10V, IE=0, f=1MHz Cob 6.0 pF Transition Frequency VCE=5V, IC=10mA, f=100MHz fT Noise Figure VCE=5V, IC=0.2mA, f=1kHz Rg=2KΩ, △f=200Hz NF Base-Emitter Voltage 20-Oct-2009 Rev. C 0.58 MAX. 100 MHz 10 dB Page 1 of 3 BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente ABSOLUTE MAXIMUM RATINGS OF TR2 at Ta = 25°C SYMBOL VALUE UNITS Collector to Base Voltage PARAMETER VCBO -50 V Collector to Emitter Voltage VCEO -45 V Emitter to Base Voltage VEBO -5 V IC -100 mA Collector Currrent – Continuous Collector Power Dissipation PC 200 mW Junction Temperature RθJA 150 ℃ Storage Temperature TSTG -55 ~ -150 ℃ ELECTRICAL CHARACTERISTICS OF TR2 (PNP Transister) at Ta = 25°C CHARACTERISTIC TEST CONDITION SYMBOL MIN. Collector-Base Breakdown Voltage IC=-10μA, IE=0 V(BR)CBO -50 V Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 V(BR)CEO -45 V Emitter=Base Breakdown Voltage IE=-1μA, IC=0 V(BR)EBO -5 V Collector Cutoff Current VCB=-30V, IE=0 ICBO -15 nA Emitter Cutoff Current VEB=-5V, IC=0 IEBO -15 nA DC Current Gain VCE=-5V, IC=-2mA hFE IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V VCE(sat) VCE(sat) VBE(sat) VBE(sat) VBE(On) VBE(On) Collector Output Capacitance VCB=-10V, IE=0, f=1MHz Cob Transition Frequency VCE=-5V, IC=-10mA, f=100MHz VCE=-5V, IC=-0.2mA, f=1kHz Rg=2KΩ, △f=200Hz fT Collector-emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Noise Figure NF TYP. 220 MAX. 475 -0.3 -0.65 -0.7 -0.6 UNIT -0.95 -0.75 -0.82 4.5 100 V V V V V V pF MHz 10 dB CHARACTERISTIC CURVES 20-Oct-2009 Rev. C Page 2 of 3 BC847PN Elektronische Bauelemente NPN - PNP Silicon Multi-Chip Transistor CHARACTERISTIC CURVES 20-Oct-2009 Rev. C Page 3 of 3