DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Gold metallization realizes very stable characteristics and excellent lifetime 1 collector 2 base 3 emitter connected to flange • Input matching cell improves input impedance and allows an easier design of circuits APPLICATION 1 columns • Common emitter class-A linear power amplifiers up to 4.2 GHz. DESCRIPTION c b DESCRIPTION 3 NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 2 e MAM131 Top view Marking code: 502 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier. MODE OF OPERATION Class-A (CW) linear f (GHz) VCE (V) IC (mA) PL1 (mW) Gpo (dB) Zi (Ω) ZL (Ω) 4.2 18 110 ≥450 ≥6.6 100 + j40 4 + j4 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 21 2 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCER collector-emitter voltage RBE = 100 Ω − 35 V VCEO collector-emitter voltage open base − 16 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 250 mA Ptot total power dissipation − 4 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature at 0.3 mm from case; t = 10 s − 235 °C Tmb ≤ 75 °C MBH902 103 handbook, halfpage MGD966 5 handbook, halfpage Ptot (W) IC (mA) 4 (3) 102 3 (1) 2 (2) 10 VCEO 1 1 10 15 20 25 30 0 −50 35 VCE (V) 0 50 100 150 200 Tmb (°C) Tmb ≤ 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE ≤ 100 Ω. (3) Second breakdown limit (independent of temperature). Fig.3 Fig.2 DC SOAR. 1997 Feb 21 3 Power dissipation derating as a function of mounting-base temperature. Philips Semiconductors Product specification NPN microwave power transistor LTE42005S THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting-base Tj = 75 °C 36 K/W Rth mb-h thermal resistance from mounting-base to heatsink Tj = 75 °C; note 1 0.7 K/W Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 20 V; IE = 0 − − 0.1 µA VCB = 40 V; IE = 0 − − 0.25 mA VCE = 35 V; RBE = 100 Ω − − 1 mA µA ICER emitter cut-off current IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − − 0.2 hFE DC current gain VCE = 5 V; IC = 110 mA 15 − 150 Ccb collector-base capacitance VCB = 20 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz − 0.5 − pF Cce collector-emitter capacitance VCE = 20 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz − 1.5 − pF Ceb emitter-base capacitance VCB = 10 V; VEB = 1 V; IC = IE = 0; f = 1 MHz − 6.5 − pF 1997 Feb 21 4 Philips Semiconductors Product specification NPN microwave power transistor Table 1 f (MHz) LTE42005S Scattering parameters: VCE = 18 V; IC = 110 mA (VCE and IC regulated); Tmb = 25 °C; Zo = 50 Ω; typical values. (The figures given between brackets are values in dB). s21 s11 s12 s22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 500 0.76 −176 0.022 (−33.2) 37 8.13 (18.2) 85 0.35 −62 600 0.75 180 0.023 (−32.8) 37 6.95 (16.8) 78 0.34 −66 700 0.76 177 0.023 (−32.8) 40 5.95 (15.5) 73 0.34 −71 800 0.76 174 0.024 (−32.5) 41 5.25 (14.4) 67 0.35 −75 900 0.76 171 0.024 (−32.3) 42 4.69 (13.4) 62 0.35 −79 1000 0.75 168 0.026 (−31.8) 43 4.23 (12.5) 57 0.36 −83 1100 0.75 165 0.028 (−31.0) 43 3.88 (11.8) 53 0.37 −87 1200 0.74 163 0.031 (−30.1) 43 3.61 (11.2) 49 0.39 −90 1300 0.75 160 0.035 (−29.2) 43 3.36 (10.5) 44 0.40 −95 1400 0.74 162 0.037 (−28.5) 44 3.12 (9.9) 41 0.43 −98 1500 0.73 157 0.041 (−27.8) 46 2.95 (9.4) 37 0.43 −101 1600 0.73 155 0.045 (−27.0) 46 2.83 (9.0) 32 0.45 −104 1700 0.71 154 0.047 (−26.5) 44 2.70 (8.6) 28 0.47 −107 1800 0.70 151 0.049 (−26.1) 43 2.56 (8.2) 23 0.48 −110 1900 0.69 148 0.050 (−25.9) 42 2.44 (7.7) 19 0.50 −114 2000 0.68 143 0.051 (−25.9) 39 2.34 (7.4) 14 0.51 −116 2200 0.67 138 0.058 (−24.7) 36 2.16 (6.7) 4 0.55 −124 2400 0.65 134 0.067 (−23.5 34 2.02(6.1) −2 0.59 −129 2600 0.62 129 0.077 (−22.3) 31 1.95 (5.8) −12 0.64 −134 2800 0.57 122 0.082 (−21.7) 25 1.84 (5.3) −21 0.68 −138 3000 0.52 113 0.086 (−21.3) 21 1.78 (5.0) −32 0.72 −143 3200 0.49 104 0.093 (−20.6) 16 1.67 (4.5) −42 0.74 −150 3400 0.45 99 0.102 (−19.8) 13 1.62 (4.2) −52 0.80 −157 3600 0.38 92 0.113 (−18.9) 8 1.52 (3.6) −64 0.80 −163 3800 0.29 83 0.119 (−18.5) 6 1.43 (3.1) −76 0.82 −170 4000 0.24 69 0.137 (−17.3) 2 1.27 (2.1) −88 0.80 −179 4200 0.20 54 0.165 (−15.7) −5 1.08 (0.7) −98 0.68 171 4400 0.15 28 0.202 (−13.9) −20 0.92 (0.8 −100 0.51 172 4600 0.12 −36 0.206 (−13.7) −38 0.93 (0.6) −102 0.52 −174 4800 0.17 −86 0.195 (−14.2) −52 0.97 (−0.3) −110 0.63 −171 5000 0.24 −114 0.177 (−15.0) −65 0.97 (−0.3) −122 0.73 −174 5200 0.31 −137 0.164 (−15.7 −73 0.93 (−0.6) −133 0.79 −180 5400 0.41 −152 0.154 (−16.2) −83 0.88 (−1.1) −145 0.83 174 5600 0.48 −161 0.134 (−17.4) −90 0.81 (−1.8) −156 0.85 166 5800 0.53 −168 0.122 (−18.2) −97 0.77 (−2.3) −167 0.87 160 6000 0.56 −179 0.105 (−19.6) −104 0.70 (−3.1) −178 0.89 154 1997 Feb 21 5 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class-A test circuit; note 1. MODE OF OPERATION Class-A (CW) f (GHz) VCE (V) (2) IC (mA) (2) PL1 (mW) (3) Gpo (dB) (4) Zi (Ω) ZL (Ω) 4.2 18 110 ≥450 (26.5) typ. 550 (27.4) ≥6.6 typ. 7.2 100 + j40 4 + j4 Notes 1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners. 2. IC and VCE regulated. 3. Load power for 1 dB compressed power gain. 4. Low level power gain associated with PL1. ,, , , ,, ,,,,,,, ,, ,,,,,,,, , , , ,, , , , , ,, ,,,,,,, , ,,,,,, ,,,,,,,, ,, , ,, , ,, , ,,, ,, ,,,,,,,, ,,, ,, 10.4 handbook, full pagewidth 0.8 3 input VSWR <3 z0 = 50 Ω 5 2 1 4 output VSWR <3 z0 = 50 Ω 2.8 11.5 13 4.5 5.5 30 15.5 10 30 Dimensions in mm. Input striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.54); thickness: 1.6 mm. Output striplines on a double copper-clad Rexolite printed-circuit board with dielectric (εr = 2.4); thickness: 0.25 mm. Fig.4 Prematching test circuit board. 1997 Feb 21 6 MSA097 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S MGL012 600 handbook, halfpage PL1 (1) PL (mW) 400 typ 200 0 0 50 100 Pi (mW) 150 f = 4.2 GHz; Tmb = 25 °C. VCE = 18 V; IC = 110 mA (both regulated). (1) Gpo = 7.2 dB. Fig.5 Load power as a function of input power. 1997 Feb 21 7 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S PACKAGE OUTLINE 0.1 andbook, full pagewidth 3.45 2.90 1.7 max 4.5 max 3 20.5 max seating plane 0.25 M 1.0 1 4.5 min O 0.25 M 3.2 2.9 5.1 3.4 (1) 2 2.0 7.1 14.2 Dimensions in mm. Torque on screw: Max. 0.4 Nm Recommended screw: M2.5 Fig.6 SOT440A. 1997 Feb 21 8 MBC888 5.5 max 4.5 min Philips Semiconductors Product specification NPN microwave power transistor LTE42005S DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 21 9 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S NOTES 1997 Feb 21 10