Reflexlichtschranke im SMT-Gehäuse Reflective Interrupter in SMT Package SFH 9201 Wesentliche Merkmale • Optimaler Arbeitsabstand 1 mm bis 5 mm • IR-GaAs-Lumineszenzdiode: Sender • Si-NPN-Fototransistor: Empfänger • Tageslichtsperrfilter • Hoher Kollektor-Emitter-Strom typ. 0.7 mA • Geringe Sättigungsspannung • Sender und Empfänger galvanisch getrennt Features • Optimal operating distance 1 mm to 5 mm • IR-GaAs-emitter • Silicon NPN phototransistor detector • Daylight filter against undesired light effects • High collector-emitter current typ. 0.7 mA • Low saturation voltage • Emitter and detector electrically isolated Anwendungen Applications • • • • • • • • Positionsmelder Endabschalter Drehzahlüberwachung, -regelung Bewegungssensor Typ Type Position reporting End position switch Speed monitoring and regulating Motion transmitter ICE IF = 10 mA, VCE = 5 V, d = 1 mm Bestellnummer Ordering Code mA SFH 9201 Q62702-P5038 0.25 … 2.00 SFH 9201-1/2 Q62702-P5055 0.25 … 0.80 SFH 9201-2/3 Q62702-P5056 0.40 … 1.25 SFH 9201-3/4 Q62702-P5057 0.63 … 2.00 2000-01-01 1 OPTO SEMICONDUCTORS SFH 9201 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Sperrspannung Reverse voltage VR 5 V Vorwärtsgleichstrom Forward current IF 50 mA Verlustleistung Power dissipation Ptot 80 mW Dauer-Kollektor-Emitter-Sperrspannung Continuous collector-emitter voltage VCE 16 V Kollektor-Emitter-Sperrspannung, (t ≤ 2 min) Collector-emitter voltage, (t ≤ 2 min) VCE 30 Emitter-Kollektor-Sperrspannung Emitter-collector voltage VEC 7 Kollektorstrom Collector current IC 10 mA Verlustleistung Total power dissipation Ptot 100 mW Lagertemperatur Storage temperature range Tstg – 40 … + 85 °C Umgebungstemperatur Ambient temperature range TA – 40 … + 85 Elektrostatische Entladung Electrostatic discharge ESD 2 Umweltbedingungen / Environment conditions 3 K3 acc. to EN 60721-3-3 (IEC 721-3-3) Sender (GaAs-Diode) Emitter (GaAs diode) Empfänger (Si-Fototransistor) Detector (silicon phototransistor) Reflexlichtschranke Light Reflection Switch 2000-01-01 2 KV OPTO SEMICONDUCTORS SFH 9201 Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Durchlaβspannung Forward voltage IF = 50 mA VF 1.25 (≤ 1.65) V Sperrstrom Reverse current VR = 5 V IR 0.01 (≤ 1) µA Kapazität Capacitance VR = 0 V, f = 1 MHz CO 25 pF Wärmewiderstand1) Thermal resistance1) RthJA 400 K/W Kapazität Capacitance VCE = 5 V, f = 1 MHz CCE 10 pF Kollektor-Emitter-Reststrom Collector-emitter leakage current VCE = 20 V ICEO 3 (≤ 200) nA Fotostrom (Fremdlichtempfindlichkeit) Photocurrent (outside light density) VCE = 5 V, EV = 1000 Lx IP 3.5 mA Wärmewiderstand1) Thermal resistance1) RthJA 400 K/W Sender (IR-GaAs-Diode) Emitter (IR-GaAs diode) Empfänger (Si-Fototransistor) Detector (silicon phototransistor) 2000-01-01 3 OPTO SEMICONDUCTORS SFH 9201 Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kollektor-Emitterstrom Collector-emitter current Kodak neutral white test card, 90% Reflexion IF = 10 mA; VCE = 5 V; d = 1 mm ICE min. ICE typ. 0.25 0.70 mA mA Kollektor-Emitter-Sättigungsspannung Collector-emitter-saturation voltage Kodak neutral white test card, 90% Reflexion IF = 10 mA; d = 1 mm; IC = 85 µA VCE sat 0.15 (≤ 0.6) V Reflexlichtschranke Light Reflection Switch 1) Montage auf PC-Board mit > 5 mm2 Padgröβe 1) Mounting on pcb with > 5 mm2 pad size d Reflector with 90% reflexion (Kodak neutral white test card) OHM02257 2000-01-01 4 OPTO SEMICONDUCTORS SFH 9201 Schaltzeiten (TA = 25 °C, VCC = 5 V, IC = 1 mA1), RL = 1 kΩ) Switching Times ΙF RL ΙC VCC Output OHM02258 Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Einschaltzeit Turn-on time tein ton 65 µs Anstiegzeit Rise time tr 50 µs Ausschaltzeit Turn-off time taus toff 55 µs Abfallzeit Fall time tf 50 µs 1) IC eingestellt über den Durchlaβstrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom Bauteil (d) 1) IC as a function of the forward current of the emitting diode, the degree of reflection and the distance between reflector and component (d) 2000-01-01 5 OPTO SEMICONDUCTORS SFH 9201 Collector Current ΙC IC --------- = f (d ) I Cmax Permissible Power Dissipation for Diode and Transistor Ptot = f (TA ) OHO02255 100 Ι C max % OHO02260 160 Ptot Switching Characteristics t = f (RL) TA = 25 °C, IF = 10 mA OHO00785 10 3 Total power dissipation t mW Ι C = 100 µ A µs 80 120 t on Detector t off 60 Emitter 80 10 2 t on t off 40 Ι C = 1 mA 40 20 Kodak neutral white test card Mirror 0 0 0 1 2 3 4 mm 5 d Max. Permissible Forward Current I F = f ( TA ) OHO02259 120 0 20 40 60 80 C 100 10 1 -1 10 kΩ RL 10 0 TA Transistor Capacitance (typ.) CCE = f (VCE), TA = 25 °C, f = 1 MHz OHO00374 50 10 1 Collector Current IC = f (IF), spacing d to reflector = 1 mm, 90% reflection OHO00783 3.0 Ι F mA pF Ι C mA 100 C CE 40 2.5 35 80 2.0 30 25 60 1.5 20 40 1.0 15 VCE = 5 V 10 20 0.5 5 0 0 0 20 40 60 80 C 100 10 -2 10 -1 10 0 TA Forward Voltage (typ.) of the Diode VF = f (T) OHO02256 1.30 VF V 1.25 10 1 V VCE 10 2 Relative Spectral Emission of Emitter (GaAs) Ιrel = f (λ) and Detector (Si) Srel = f (λ) OHO00786 100 Ι rel S rel % 0 8 12 16 mA 20 ΙF Output Characteristics (typ.) OHO00781 2.0 Ι F = 25 mA 1.6 Ι F = 20 mA 10 mA 4 IC = f (VCE), spacing to reflector: d = 1 mm, 90% reflection, TA = 25 °C Ι C mA 80 1.20 0 Ι F = 20 mA 1.4 1.2 60 5 mA Ι F = 15 mA 1.0 1.15 Detector Ι F = 10 mA 0.8 40 1.10 0.6 Ι F = 5 mA 0.4 20 1.05 0.2 Emitter 1 -40 -20 2000-01-01 0 20 40 60 C T 100 0 700 800 900 1000 nm 1100 λ 6 0 0.1 10 0 10 1 V VCE OPTO SEMICONDUCTORS SFH 9201 6.2 5.8 3.4 3.0 4.2 3.8 2.1 1.7 0...0.1 0.15 0.13 Maßzeichnung Package Outlines 0.5 0.3 6 5 4 1 2 3 1.27 spacing GEO06840 Type 1 2 3 4 5 6 SFH 9201 Anode – Emitter Collector – Cathode Maße in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified. 2000-01-01 7 OPTO SEMICONDUCTORS SFH 9201 Löthinweise Soldering Conditions Bauform Type SFH 9201 Drypack Tauch-, Schwalllötung Reflowlötung Level acc. Dip, Wave Soldering Reflow Soldering to Peak Temp. Max. Time in Peak Temp. Max. Time IPS-stand. (solderbath) Peak Zone (package in Peak 020 temp.) Zone 4 n. a. 245 °C – 10 sec. Kolbenlötung Iron Soldering (Iron temp.) n.a. Bitte Verarbeitungshinweise für SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! 2000-01-01 8 OPTO SEMICONDUCTORS