FH101 The Communications Edge ™ Product Information High Dynamic Range FET Product Features • 50-3000 MHz Bandwidth • +36 dBm Output IP3 • 1.2 dB Noise Figure • 18 dB Gain • +18 dBm P1dB • Single or Dual Supply Operation • MTBF >100 Years • SOT-89 SMT Package Product Description The FH101 is a high dynamic range FET packaged in a low cost surface mount package. The device is available in both the standard SOT-89 package and the environmentally friendly lead-free and “green” SOT-89 package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The FH101 achieves +36 dBm OIP3 at a mounting temperature of 85°C with an associated MTBF of >100 years. The package is a SOT89. All devices are 100% RF and DC tested. The product is targeted for applications where high linearity is required. Actual Size DC Electrical Parameter Units Min. Saturated Drain Current, Idss mA 100 Transconductance, Gm mS Pinch Off Voltage, Vp V -3.0 Units Min. dB 17 Max Stable Gain, Gmsg dB dBm Output P1dB Noise Figure, NF Typical Max. 140 -1.5 Typical Max. 18 23 32 36 dBm 18 dB 1.2 7 170 120 Small Signal Gain, Gss Output IP3 4 1 2 3 Function Pin No. Gate Source Drain Source 1 2 3 4 Typical Parameters Specifications RF Parameter Functional Diagram Parameter Units Frequency S21 S11 S22 Output IP3 Output P1dB Noise Figure MHz dB dB dB dBm dBm dB Drain Bias Supply Gate Bias Typical 900 19.0 -10.7 -9.7 +38.0 +18.8 2.7 1900 16.0 -12.3 -17.2 +33.6 +19.1 3.1 5 V @ 140 mA 0V Typical parameters reflect performance in an application circuit. Notes: 1. DC and RF parameters measured under the following conditions unless otherwise noted. 25°C with Vds = 5.0 V, Vgs = 0 V, test frequency = 800 MHz, 50 W system. 2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule. 3. Device needs appropriate match to become unconditionally stable. 4. Degradation of OIP3 occurs at low temperatures. Minimum typical OIP3 at -40°C is +36 dBm. 5. Idss is measured with Vgs = 0 V. 6. Pinch off voltage is measured when Ids = 0.6 mA. 7. Measured with Vds = 3.3 V, 50% Idss. Absolute Maximum Ratings Parameter Drain to Source Voltage Gate to Source Voltage Gate Current Operating Case Temperature Storage Temperature Input RF Power (continuous) Ordering Information Rating Part No. Description +6.0 V -6.0 V 4.5 mA -40 to +85°C -55 to +125°C +10 dBm FH101 FH101-G High Dynamic Range FET (leaded)1 High Dynamic Range FET (lead-free)2 1 Product may contain lead-bearing materials. Maximum +235°C reflow temperature. 2 Product does not contain lead-bearing materials. Maximum +260°C reflow temperature. Also compatible with leaded soldering process. Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com April 2004 FH101 The Communications Edge ™ Product Information High Dynamic Range FET OIP3 vs. Frequency Gain vs. Temperature 5V 100% Idss 5 21 3.3V 50% Idss 20 10 NF (dB) 30 17 15 1 1.5 2 Frequency (GHz) 2.5 1 0 0 3 .5 1 45 45 OIP3 (dBm) OIP3 (dBm) OIP3 vs. Temperature 50 40 5V, 100% Idss 35 5V, 100% Idss 2 3.3V 50% Idss 5V, 100% Idss 11 .5 3 Gain at +85°C 13 50 1.5 2 2.5 3 0 .5 1 1.5 0 20 40 60 80 100 2.5 Frequency (GHz) OIP3 vs. Power Out S-Parameters 3 40 2.05 0.05 2.05 0.05 S22 30 -20 2 Frequency (GHz) 35 30 -40 4 Gain at -40°C Gain at +22°C 19 Gain(dB) OIP3 (dBm) 40 0 0 NF vs. Frequency 23 50 0 2 4 6 8 10 12 14 16 18 Output Power (dBm) Temperature (°C) S11 S11 and S22 Thermal Specifications Operating Case Temperature Thermal Resistance (Maximum) Junction Temperature (Recommended Maximum) Rating -40 to +85°C 59°C/W +160°C Notes: 1. Thermal Resistance determined at Maximum Tab Temperature and Maximum Power Dissipation. 2. Recommended Maximum Junction Temperature insures a MTBF of 1 million hours. 108 MTBF (hours) Parameter MTBF vs. Temperature 109 107 106 105 50 Junction Ground Tab 75 100 125 150 Temperature (°C) 175 200 Specifications and information are subject to change without notice. WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com April 2004 FH101 The Communications Edge ™ Product Information High Dynamic Range FET Outline Drawing XXXX XXXX-X 1 Land Pattern ESD / MSL Information 'XXXX' = Part Designation = 'FH1' for FH101 'XXXX' = Part Designation = 'FH1G' for FH101-G '1' = Lasermark 'XXXX-X' = Lot Code ESD Classification: Value: Test: Standard: Class 1B Passes at 600 V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Classification: Value: Test: Standard: Class IV Passes at 1000 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 FH101 MSL Rating: Standard: Level 3 at +225°C convection reflow JEDEC Standard J-STD-020 FH101-G MSL Rating: Standard: Level 3 at +260°C convection reflow JEDEC Standard J-STD-020 Mounting Configuration Specifications and information are subject to change without notice. WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com April 2004 FH101 The Communications Edge ™ Product Information High Dynamic Range FET Typical Test Data S-Parameters (Vds = +5 V, 100% Idss, T = 22°C, de-embedded into package device in a 50 ohm system) Freq (GHz) S11 (Mag) S11 (Ang) S21 (dB) S21 (Mag) S21 (Ang) S12 (Mag) S12 (Ang) S22 (Mag) S22 (Ang) K Value 0.05 0.30 0.55 0.80 1.05 1.30 1.55 1.80 2.05 2.30 2.55 2.80 3.05 0.997 0.993 0.968 0.928 0.905 0.868 0.841 0.815 0.780 0.766 0.754 0.754 0.748 -3.940 -22.800 -42.900 -62.100 -79.100 -95.800 -111.000 -126.000 -142.000 -155.000 -168.000 -180.000 169.000 19.789 19.370 19.133 18.639 18.116 17.478 16.852 16.191 15.519 14.901 14.253 13.679 13.103 9.760 9.300 9.050 8.550 8.050 7.480 6.960 6.450 5.970 5.560 5.160 4.830 4.520 175.000 162.000 147.000 133.000 121.000 109.000 97.500 86.900 76.800 67.300 58.300 49.600 41.200 0.002 0.015 0.027 0.037 0.046 0.053 0.059 0.063 0.068 0.071 0.073 0.074 0.075 97.900 76.000 66.100 54.400 45.800 35.500 27.400 20.100 13.400 6.700 0.425 -5.810 -12.300 0.502 0.492 0.455 0.424 0.398 0.361 0.329 0.308 0.296 0.268 0.240 0.216 0.191 -6.360 -15.200 -26.300 -36.400 -47.300 -56.700 -66.400 -75.000 -81.500 -89.400 -96.100 -103.000 -110.000 0.0004 0.0570 0.1303 0.2302 0.2490 0.3267 0.3761 0.4231 0.4842 0.5293 0.5844 0.6190 0.6719 S-Parameters (Vds = +3.3 V, 50% Idss, T = 22°C, de-embedded into package device in a 50 ohm system) Freq (GHz) S11 (Mag) S11 (Ang) S21 (dB) S21 (Mag) S21 (Ang) S12 (Mag) S12 (Ang) S22 (Mag) S22 (Ang) K Value 0.05 0.30 0.55 0.80 1.05 1.30 1.55 1.80 2.05 2.30 2.55 2.80 3.05 0.998 0.994 0.973 0.935 0.915 0.880 0.853 0.826 0.788 0.772 0.757 0.755 0.747 -3.580 -21.200 -39.900 -58.000 -74.200 -90.300 -105.000 -120.000 -136.000 -150.000 -163.000 -175.000 174.000 18.900 18.700 18.547 18.105 17.696 17.122 16.547 15.959 15.402 14.807 14.185 13.625 13.064 8.810 8.610 8.460 8.040 7.670 7.180 6.720 6.280 5.890 5.500 5.120 4.800 4.500 176.000 163.000 149.000 136.000 123.000 112.000 100.000 89.900 79.700 70.000 60.800 52.000 43.400 0.002 0.016 0.030 0.042 0.052 0.061 0.068 0.073 0.080 0.083 0.087 0.089 0.090 105.000 78.500 66.900 55.800 46.900 37.200 28.700 20.800 14.000 6.160 -0.455 -6.810 -13.400 0.387 0.392 0.360 0.337 0.317 0.285 0.259 0.250 0.236 0.215 0.189 0.169 0.150 -3.780 -16.300 -29.600 -42.100 -55.600 -67.900 -81.000 -93.100 -102.000 -115.000 -126.000 -138.000 -152.000 -0.0299 0.0449 0.1249 0.2164 0.2394 0.3035 0.3513 0.3876 0.4513 0.4923 0.5445 0.5746 0.6242 Specifications and information are subject to change without notice. WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com April 2004