ETC TMPA402DS

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TMPA402DS
Preliminary
Tai-1 Microelectronics
www.class-d.com.tw
Rev.2.0
November 21, 2005
6W/Ch STEREO CLASS-D AUDIO POWER AMPLIFIER
GENERAL DESCRIPTION
FEATURES
The TMPA402DS is a Single-ended (SE) output Class-D
♦ 6W/Ch Stereo Class-D Output
audio power amplifier for driving speakers with high power
♦ Power efficiency is up to 82%
efficiency. It is able to drive 4Ω, 6Ω, 8Ω or 16Ω speakers.
♦ Time delay for de-pop control
The output power can be up to 6W per channel. No external
♦ Thermal Protection
heat-sink is necessary.
♦ Output Pin Short-Circuit Protection (Short to
The gain of the amplifier can be changed by adding external
input resistance.
Thermal
protection
Other Outputs, Short to VCC, Short to Ground)
♦ Low Quiescent Current (5mA Typical at 12V)
and
short-circuit
protection
are
♦ Low Current in Shutdown Mode (<1µA Typical)
integrated for safety purpose.
♦ Separate VCC & PVCC
The internal depop circuitry eliminates pop noise at
APPLICATIONS
power-up & shutdown operations.
LCD Monitors, TVs, DVD Players and Powered Speakers
PACKAGE
TSSOP20 available
For best performance, please refer to
http://www.taimec.com.tw/English/EVM.htm
http://www.class-d.com.tw/English/EVM.htm
for PCB layout.
REFERENCE CIRCUIT
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TMPA402DS
Preliminary
Tai-1 Microelectronics
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Rev.2.0
November 21, 2005
TOP VIEW
(Please email [email protected] for complete datasheet.)
Tai-1 Microelectronics reserves the right to make corrections, modifications, enhancements, improvements, and other
changes to its products and services at any time and to discontinue any product or service without notice. Customers are
responsible for their products and applications using Tai-1 Microelectronics components.
Note that the external components or PCB layout should be designed not to generate abnormal
voltages to the chip to prevent from latch up which may cause damage to the device.
Typical Application
PVCC
R1
330Ω
+
0.1uF
S1
switch
PVCC
10uF
VCC
VI+
D1
DIODE
J2
C5
1nF
PHONEJACK STEREO
R4
R3
12k
R5 22k
R2
12k
R6 22k
200k
INP
INN
C1 1uF
VIC17
1nF
C2 1uF
C3
1uF
R8
330Ω
C4
10uF
C9
0.1uF
R7 100
1 VCC PVCC20
2 SDB PVCC19
3 INR OUTR18
4 INL OUTR17
5 AGND PGND
16
6 HFVDDPGND
15
7 HFRC OUTL14
8 AVDD OUTL13
VDD
PVCC
9
12
10AGND PVCC11
402DS
+
C13
2.2uF
C7
0.1uF
R9
2k
R10
2k
+
C19
1000uF
+
4 ohm
L3 15uH
+
L4
C8
0.1uF
C10
+
J1
C16
C6
D2
DIODE
15uH
C14
2.2uF
R11
2k
R12
2k
C18
1000uF
+
4 ohm
10uF
PVCC
C15
1uF
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TMPA402DS
Preliminary
Tai-1 Microelectronics
www.class-d.com.tw
Rev.2.0
November 21, 2005
TERMINAL FUNCTIONS
TERMINAL
I/O
NAME
DESCRIPTION
PIN NO
AGND
5,10
-
Analog ground
AVDD
8
O
5-V analog power supply
HFRC
7
I
De-pop control
HFVDD
6
O
2.5-V Reference for convenience of single-ended input
INL
4
I
Negative differential input
INR
3
I
Positive differential input
OUTN
13,14
O
Negative output
OUTP
17,18
O
Positive output
PGND
15,16
-
Power ground
PVCC
11,12,19,20
-
Power supply for output MOS (8V to 15V)
VCC
1
-
High-voltage power supply (8V to 15V)
VDD
9
O
5-V Reference output(25-mA )
SD
2
I
Shutdown (Low valid)
ABSOLUTE MAXIMUM RATINGS
Over operating free-air temperature range unless otherwise noted(1)
In normal mode
Supply voltage, PVcc, Vcc
In shutdown mode
Input voltage, SD
-0.3V to 18V
V
-0.3V to 18V
V
-0.3V to Vcc+0.3V
V
-0.3V to 5V
V
Input voltage, INR, INL
Continuous total power dissipation
See package dissipation ratings
。C
-20 to 85
Operating free-air temperature, TA
Operating junction temperature, TJ
-20 to 150
Storage temperature, Tstg
-40 to 150
。C
。C
(1) Stresses beyond those listed under ”absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions “is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Supply voltage, VCC
PVCC, VCC
High-level input voltage, V IH
SD
Low-level input voltage, V IL
SD
MIN
MAX
UNIT
8
15
V
2.0
V
0.8
Operating free-air temperature, TA
-20
V
。C
85
PACKAGE DISSIPATION RATINGS
PACKGE
TSSOP20(FD)
DERATING
TA ≤ 25。C
TA = 70。C
TA = 85。C
FACTOR
POWER RATING
POWER RATING
POWER RATING
30 mW/。C
3.75W
2.4W
1.95W
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TMPA402DS
Preliminary
Tai-1 Microelectronics
www.class-d.com.tw
Rev.2.0
November 21, 2005
DC CHARACTERISTICS
T A=25。C, VCC=15V, RL=8Ω speaker (unless otherwise noted)
PARAMETER
TEST CONDITIONS
│VOS│
Output offset voltage
HFVDD
Half VDD reference output
AVDD/VDD
5-V Regulated voltage
ICC
Quiescent current (no load)
ICC(SD)
Supply current in shutdown mode
rds(on)
Drain-source on-state resistance
*Gain
MIN
INL and INR AC grounded
MAX
80
Gain=20dB
V
AVDD
IO=0 to 25mA, SD =High,
5.0
5.5
SD =High, VCC= 12V
5
10
SD =High, VCC= 15V
8
16
SD =0V, VCC= 12V
0.2
1
SD =0V, VCC= 15V
0.2
1
VCC=8V to 15V
4.5
VCC=15V
High side
600
IO=1A,
Low side
500
Ri=40k
22
Ri=20k
25.5
Ri=10k
28
Ri= 0k
31.5
UNIT
mV
0.5x
No load
Voltage Gain
TYP
V
mA
uA
mΩ
dB
IIH
High-level input current
VI =2V( SD ), VCC=8~15V
20
uA
IIL
Low-level input current
VI =0V( SD ), VCC=8~15V
1
uA
fOSC
Oscillator frequency
VCC=8~15V
300
kHz
Zi
Input resistance of INR/INL
*Gain= 750k
Ri + 20K
(Vcc=15V) ,
Gain= 600k
Ri + 20K
200
20
(Vcc=12V),
kΩ
Ri:external input resistance of INR/INL inputs
AC CHARACTERISTICS
T A=25。C, VCC=15V, RL=8Ω speaker (unless otherwise noted)
PARAMETER
TEST CONDITIONS
RL=4Ω
PO(max)
THD+N
Maximum continuous output power
(r.m.s) per channel at 1kHz
Total harmonic distortion plus noise
Vn
Output noise
SNR
Signal-to-noise ratio
Crosstalk Crosstalk between outputs
MIN
TYP
MAX
UNIT
6
W
RL=6Ω
4.6
W
RL=8Ω
3.75
W
Vcc=12V, PO=4W, RL=4Ω, f=1kHz
0.4
Vcc=15V, PO=5W, RL=4Ω, f=1kHz
0.47
Vcc=12V, Po at THD+N<0.5%, f=1kHz
Gain=20dB
Maximum output at THD+N<0.5%,
f=1kHz
VCC=12V, PO=1W RL=8Ω
Thermal trip point
Thermal hysteresis
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%
-70
dB
85
dB
-60
dB
145
。C
。C
25
4
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TMPA402DS
Preliminary
Tai-1 Microelectronics
www.class-d.com.tw
Rev.2.0
November 21, 2005
7
Po-O utput Power - W
6
5
Vcc=15V
4
3
Vcc=12V
2
TA=25℃
10% THD Maximum
1
4
5
6
7
8
9
10
RL - Load Impedance-Ω
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Preliminary
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TMPA402DS
Rev.2.0
November 21, 2005
DETAILED DESCRIPTION
Efficiency
The output transistors of a class D amplifier act as switches. The power loss is mainly due to
the turn on resistance of the output transistors when driving current to the load. As the turn on
resistance is so small that the power loss is small and the power efficiency is high. With 8 ohm
load the power efficiency can be better than 80%.
PCB layout for power dissipation
No heat sink is necessary for power dissipation. However the PCB layout should be well
designed to dissipate heat for high output power. With 80% power efficiency the generated
heat when driving 12 watts to the 8 ohm load is about 3 watts. The heat can be carried out
through the thermal pad of the device to the PCB. To ensure proper dissipation of heat the
PCB has to have heat path from the bottom of the device which is soldered to the PCB. The
area of the metal on the PCB for heat dissipation should be big enough. It is suggested that
both sides of the PCB are used for power dissipation.
Shutdown
The shutdown mode reduces power consumption. A LOW at shutdown pin forces the device in
shutdown mode and a HIGH forces the device in normal operating mode. Shutdown mode is
useful for power saving when not in use. This function is useful when other devices like
earphone amplifier on the same PCB are used but class D amplifier is not necessary.
Internal circuit for shutdown is shown below.
Pop-less
A soft start capacitor can be added to the HFRC pin. This capacitor introduced delay for the
circuit to be stable before driving the load. The set up time for internal circuit to be stable is
quite fast, typically it is less than 100ms. Thus the pop noise caused by shutdown operation
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TMPA402DS
Rev.2.0
November 21, 2005
can be fixed easily. But for external circuitry the setup time depends on the component values
used in the application.
For single-ended outputs a voltage divider is to provide half Vcc to the output pin as shown in
the following diagram. During power up this divider is to pre-charge output capacitor to half
Vcc before output signal is enabled to drive the speaker. Since the equivalent resistance of the
voltage divider is 1k ohms (2kohms//2kohms) and the capacitance of the output coupling
capacitor is 1000uF the RC constant is 1 second. This indicates that the power up delay has to
be much longer than 1 second. Normally a capacitor of 10uF would provide enough delay time
to save power up noise.
+
1000uF
+
2k
2k
4 ohm
PVCC
HFRC
HFRC provides a way of soft start up delay. A half_Vcc voltage detector is integrated to detect
a RC charge up. The resistor of 320k ohms of the RC circuit is also integrated in the chip but
the capacitor is externally hooked up. For C=10uF the half_Vcc delay is
1-e-t/RC=0.5
or
e-t/RC=0.5
that is
t = - RC In(0.5)= (320k × 10u)
(0.693) = 2.2 seconds
To further reduce pop noise one can apply 22uF instead of 10uF at HFRC. But the delay time
becomes 4.8 seconds
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TMPA402DS
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Voltage gain
The voltage gain can be set through external resistance connecting to input pins. Higher
external resistance can be used for lower gain. The formula for voltage gain is defined in the
datasheet.
The voltage gain of the amplifier by itself is 40 at Vcc=15v. If for some reason the voltage gain
has to be reduced an external resistor can be added in series with the input signal. The
formula for voltage gain at Vcc=15v becomes
gain = 800k ohms/(Zi + Rext)
where Zi(=20k ohms) is the internal resistance of the amplifier and Rext is the external added
resistance.
Without Rext(Rext=0 ohm) the voltage gain is 800k/20k=40. If Rext is 30K ohms then the
voltage gain is 800k/(20k+30k)=16.
The voltage gain is pretty much proportional to supply voltage. For example the formula for
Vcc=12v is
gain = 640k ohms/(Zi + Rext)
Input filter
The AC coupling capacitors are used to block the DC voltage from the device. They also
define the –3db frequency at the low frequency side. Since the input pins of the device have
high impedance an input filter, if required, can be incorporated as shown in the application. A
bypass capacitor placed in between the input signal path and ground is to attenuate the high
frequencies. It defines the –3db frequency at the high frequency side.
The –3db frequency of the low frequency side is
f-3db = 1/ 2πR C
where C is the AC coupling capacitance and R is the total resistance in series with C.
The –3db frequency of the high frequency side is
f-3db = 1/ 2πR C
where C is the bypass capacitance and R is the total resistance in parallel with C.
Note that there is 20K internal resistor integrated in the chip for each input INR/INL.
Output coupling capacitor
Since the output is singled-ended, coupling capacitor is required to isolate DC voltage between
output pin and its corresponding speaker. If the -3db frequency of the output coupling stage is
set 20Hz then the coupling capacitance is C= 1/(2πx 8 ohm x 20Hz) =1000uF for 8 ohm load.
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TMPA402DS
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Output filter
Ferrite bead filter can be used for EMI purpose. The ferrite filter reduces EMI around 1 MHz
and higher(FCC and CE only test radiated emissions greater than 30 MHz). When selecting a
ferrite bead, choose one with high impedance at high frequencies, but low impedance at low
frequencies.
Use an LC output filter if there are low frequency(<1 MHz)EMI sensitive circuits and/or there
are long wires from the amplifier to the speaker. EMI is also affected by PCB layout and the
placement of the surrounding components.
The suggested LC values for different speaker impendence are showed in following figures for
reference.
LC Output Filter(1), Speaker Impedance= 4Ω
LC Output Filter(2), Speaker Impedance= 6Ω & 8Ω
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TMPA402DS
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EARPHONE USE
Class-D output can be used to drive earphone. However to avoid high power to overdrive
earphone and to prevent human ear to accidentally be hurt, a resistor has to be put in series
with the earphone speaker. Typically a resistor of 330 ohms is adequate for this purpose.
Over temperature protection
A temperature sensor is built in the device to detect the temperature inside the device. When
a high temperature around 145oC and above is detected the switching output signals are
disabled to protect the device from over temperature. Automatic recovery circuit enables the
device to come back to normal operation when the internal temperature of the device is below
around 120oC.
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TMPA402DS
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November 21, 2005
Over temperature protection
A temperature sensor is built in the device to detect the temperature inside the device. When
a high temperature around 145oC and above is detected the switching output signals are
disabled to protect the device from over temperature. Automatic recovery circuit enables the
device to come back to normal operation when the internal temperature of the device is below
around 120oC.
Over current protection
A current detection circuit is built in the device to detect the switching current of the output
stages of the device. It disables the device when the current is beyond about 3.5amps. It
protects the device when there is an accident short between outputs or between output and
power/gnd pins It also protects the device when an abnormal low impedance is tied to the
output. High current beyond the specification may potentially causes electron migration and
permanently damage the device. Shutdown or power down is necessary to resolve the
protection situation. There is no automatic recovery from over current protection.
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TMPA402DS
Preliminary
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Rev.2.0
Physical Dimensions
November 21, 2005
(IN MILLIMETERS)
±
7.72 TYP
4.16 TYP
(1.78 TYP)
0.42 TYP
0.65 TYP
LAND PATTERN
TSSOP20
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Preliminary
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TMPA402DS
Rev.2.0
November 21, 2005
IMPORTANT NOTICE
Tai-1 Microelectronics Corp. reserves the right to make changes to its products and services and to
discontinue any product or service without notice. Customers should obtain the latest relevant information for
reference. Testing and quality control techniques are used to screen the parameters. Testing of all
parameters of each product is not necessarily performed.
Tai-1 Microelectronics Corp. assumes no liability for applications assistance or customer product design. To
minimize the risks associated with customer products and applications, customers should provide adequate
design and operating safeguards.
Reproduction of information in data sheets or related documentation is permissible only if reproduction is
without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Tai-1
Microelectronics Corp. is not responsible or liable for such altered documentation.
Resale of Tai-1 Microelectronics Corp. products or services with statements different from the parameters
stated by Tai-1 Microelectronics Corp. for that product or service voids all express and any implied warranties.
Tai-1 Microelectronics Corp. is not responsible or liable for any such statements.
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