ETC TMPA221DS

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2.7W + 0.6W x 2
TMPA221DS
Preliminary
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Rev.1.0
December 24,
2007
2.1 Channel CLASS-D AUDIO POWER AMPLIFIER
GENERAL DESCRIPTION
FEATURES
The TMPA221DS is a 2.1 channel stereo & bass class-D audio
♦ 2.5V to 6V Single Supply
power amplifier IC. It delivers up to 2.7W (bass) and
♦ Integrated 2.1 channel power amplifiers in one chip
0.6W(right/left channel each) into 3 ohm loads. The bass
♦ Up to 2.7W(bass)+ 0.6W(right/left Ch) at 5V, 3 ohms
output is designed as BTL (Bridge-Tied-Load) for high output
♦ Up to 82% Power Efficiency
power. The right & left channels are designed as SE
♦ Automatic output power control (APC)
(Single-Ended). The power efficiency can be up to 82% for 8
ohm load. No external heat-sink is required.
♦ Total 4.4mA Quiescent Current at 5V
♦ Less Than 0.4uA Shutdown Current
♦ Pop-less Power-Up, Shutdown and Recovery
The internal de-pop circuitry eliminates pop noise at
♦ Thermal Shutoff and Automatic Recovery
power-up & shutdown operations. Automatic power gain
control makes the best use of battery.
♦ Compatible with earphone application
♦ Output Pin Short-Circuit Protection (Short to Other
Analog input signal is converted into digital output which
drives directly the speaker. High power efficiency is
Outputs, Short to VCC, Short to Ground)
♦ Differential Signal Processing Improves CMRR
achieved due to digital output at the load. The audio
information is embedded in PWM(Pulse Width Modulation).
Package
TSSOP20
Available, pb free【RoHS】
APPLICATIONS
For best performance, please refer to
Multimedia application includes Cellular Phones, PDAs,
http://www.taimec.com.tw/English/EVM.htm
DVD/CD players, 2.1 channel audio systems, USB audio. It
http://www.class-d.com.tw/English/EVM.htm
is also ideal for other portable devices like Wireless Radios.
for PCB layout.
REFERENCE CIRCUIT(Please refer to TMPA002.APP for application)
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1 BO UTP
2 VDD
3 NC
4 BI N P
5 BI N N
6 LI N
7 RI N
8 NC
9 VDD
10RO UT
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20
19
V D D18
SD NB17
A V DD16
A G ND15
CA P 14
V D D13
LO UT 12
G N D11
GND
BO UTN
TMPA221DS
(Please email [email protected] for complete datasheet.)
Tai-1 Microelectronics reserves the right to make corrections, modifications, enhancements, improvements, and other changes
to its products and services at any time and to discontinue any product or service without notice. Customers are responsible
for their products and applications using Tai-1 Microelectronics components.
Note that the external components or PCB layout should be designed not to generate abnormal
voltages to the chip to prevent from latch up which may cause damage to the device.
Typical Application
J1
LS3
VO1+
VO1-
PHONEJACK STEREO
SPEAKER
J2
L1
33uH
C9
1uF(6.3V)
VDD
R8
LIN
R7 12k
JP1
12k
C14
33nF(6.3V)
R6 6k
VR
C16
1uF(6.3V)
C1
C2
C3
C4
1uF(6.3V)
1uF(6.3V)
6.8nF(6.3V)
6.8nF(6.3V)
R1 22k
VDD
R9 22k
R2
0
R14 R3
330 330
C15
1nF(6.3V)
C18
1nF(6.3V)
C13
470uF
+
1 BO UTP
2 VDD
3 NC
4 BI N P
5 BI N N
6 LI N
7 RI N
8 NC
9 VDD
10RO UT
20
19
V D D18
SD NB17
A V DD16
A G ND15
CA P 14
V D D13
LO UT 12
G N D11
221DS(FD)
C17
1uF(6.3V)
C10
1uF(6.3V)
33uH
SDN
100
R5
C6
4.7uF(6.3V)
R10
S1
LS1
10K
switch
L3
R4
3k
R11
3k
VOR+
SPEAKER
C8
1uF(6.3V)
+
33uH
C19
220uF(6.3V)
L4
33uH
C11
VDD
L2
GND
BO UTN
+
RIN
+
C12
1uF(6.3V)
C20
220uF(6.3V)
R12
3k
1uF(6.3V)
R13
3k
LS2
VOL+
SPEAKER
VDD
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ABSOLUTE MAXIMUM RATINGS
Over operating free-air temperature range unless otherwise noted(1)
Supply voltage, VDD, AVDD
In normal mode
-0.3V to 6V
V
In shutdown mode
-0.3V to 7V
V
-0.3V to VDD+0.3V
V
Input voltage, VI
Continuous total power dissipation
See package dissipation ratings
。C
-20 to 85
Operating free-air temperature, TA
Operating junction temperature, TJ
-20 to 150
Storage temperature, Tstg
-40 to 150
。C
。C
(1) Stresses beyond those listed under”absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions “is
not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITONS
MIN
Supply voltage, VDD, AVDD
NOM
MAX
UNIT
2.5
6
V
V
High-level input voltage, VIH
SDNB
2
VDD
Low-level input voltage, VIL
SDNB
0
0.8
V
85
。C
Operating free-air temperature, TA
-20
PACKAGE DISSIPATION RATINGS
PACKAGE
TSSOP20
DERATING
TA ≤ 25。C
TA = 70。C
TA = 85。C
FACTOR
POWER RATING
POWER RATING
POWER RATING
8.73 mW/。C
1.09W
698mW
567mW
ELECTRICAL CHARACTERISTICS
TA=25。C (unless otherwise noted)
PARAMETER
│VOS│
PSRR
Output
offset
voltage
TEST CONDITIONS
(measured
differentially)
Power supply rejection ratio
-75
-55
dB
-55
-50
dB
VDD=AVDD=2.5V to 5.5V,
High-level input current
│IIL│
Low-level input current
IQ
Quiescent current (total)
VDD=AVDD=5V, no load
Shutdown current (total)
V( SDN )=0.8V, VDD=AVDD=2.5V to 5.5V
Static output resistance(SE)
VIC=1Vpp, RL=8Ω
VDD=AVDD=5.5V,
mV
30
VI=5.8V (SDNB)
VDD=AVDD=5.5V,
µA
1
µA
4.4
6
mA
0.4
1
µA
VI=-0.3V (SDNB)
790
VDD=AVDD=5.5V
mΩ
550
f(sw)
Switching frequency
VDD=AVDD=2.5V to 5.5V
230
280
330
*Av
Voltage Gain(BTL and SE)
VDD=AVDD=2.5V to 5.5V, RL=8Ω
12
16
20
RSDN
Resistance from shutdown to GND
V(SDNB)=5V
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UNIT
VDD=AVDD=2.5V to 5.5V
│IIH│
rDS(on)
MAX
25
Common mode rejection ratio
Static output resistance(BTL)
TYP
VI=0V,AV=2, VDD=AVDD=2.5V to 5.5V
CMRR
IQ (SD)
MIN
200
kHz
V
V
kΩ
3
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ZI
TMPA221DS
Preliminary
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Input impedance
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Rev.1.0
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RINN,RINP,LINN,LINP
December 24,
2007
kΩ
15
*The gain of the amplifier is determined by, for VDD=VDDA =2.5V to 5.5V
Gain = 320kohms
Ri + 15kohms
where Ri is the external serial resistance at the input pin.
OPERATING CHARACTERISTICS
TA=25。C, RL=8Ω speaker (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Output power (SE output)
VDD=AVDD=5V.
PO
THD+N=10%,
Output power (bass)
f=1kHz
Total harmonic distortion plus noise
(SE output)
VDD=AVDD=5V,
THD+N
Total harmonic distortion plus noise
f=1kHz
(bass)
MIN
TYP MAX
RL=4Ω
0.6
RL=8Ω
1.5
RL=4Ω
2.3
RL=3Ω
2.7
PO=0.6W, RL=4Ω,
0.8
PO=0.85W, RL=8Ω,
0.55
PO=1.3W, RL=4Ω,
0.55
PO=1.5W, RL=3Ω,
0.64
UNIT
W
%
SNR
Signal-to-noise ratio
VDD=AVDD=5V, PO=1W, RL=8Ω
95
dB
Crosstalk
Crosstalk between outputs
VDD=AVDD=5V, PO=1W RL=8Ω
-68
dB
TERMINAL FUNCTIONS
TERMINAL
I/O
NAME
AGND
DESCRIPTION
PIN NO
15
-
Analog ground
AVDD
16
-
Analog Power supply
CAP
14
I
Capacitance for power up delay
GND
11,20
-
Digital ground
BINN
5
I
Negative input of bass
BINP
4
I
Positive input of bass
BOUTN
19
O
Negative output of bass
BOUTP
1
O
Positive output of bass
NC
3,8
-
No Connection
LIN
6
I
Input of left channel
RIN
7
I
Input of right channel
LOUT
12
O
Output of left channel
ROUT
10
O
Output of right channel
SDNB
17
I
Shutdown terminal (LOW active)
2,9,13,18
-
Digital Power supply
VDD
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TMPA221DS
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2007
TYPICAL CHARACTERISTICS
Note 1. Input coupling 1µF capacitors are used for all measurements.
2. Differential inputs are applied for BTL output.
3. Balanced LC filter is used for THD+N measurement and power efficiency measurement.
4. Characteristic frequency of the LC filter is set 41KHz unless otherwise specified.
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TMPA221DS
Rev.1.0
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2007
APPLICATION INFORMATION
Figure.1 Differential Bass Input
Figure.2 Single-ended Bass Input
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TMPA221DS
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Input Resistors and Gain
The gain of the amplifier is determined by, for VDD=VDDA =2.5V to 5.5V
Gain = 320kohms where Ri is the external serial resistance at the input pin.
Ri + 15kohms
Note:Please refer to document 010 APP for more application examples.
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TMPA221DS
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2007
DETAILED DESCRIPTION
Efficiency
The output transistors of a class D amplifier act as switches. The power loss is mainly due to
the turn on resistance of the output transistors when driving current to the load. As the turn on
resistance is so small that the power loss is small and the power efficiency is high. With 8 ohm
load the power efficiency can be better than 82%.
Shutdown
The shutdown mode reduces power consumption. A LOW at shutdown pin forces the device in
shutdown mode and a HIGH forces the device in normal operating mode. Shutdown mode is
useful for power saving when not in use. This function is useful when other devices like
earphone amplifier on the same PCB are used but class D amplifier is not necessary.
Internal circuit for shutdown is shown below.
Pop-less
A soft start capacitor can be added to the CAP pin. This capacitor introduces delay for the
internal circuit to be stable before driving the load. The pop or click noise when power up/down
or switching in between shutdown mode can be thus eliminated. The delay time is proportional
to the value of the capacitance. It is about 500ms for a capacitor of 1uF at 5v.
CAP
Cap provides a way of soft startup delay. A 5uA current source and a half_Vcc detector are
integrated in the chip. The charged capacitor is externally hooked up. For C=1uF the half_Vcc
delay is
T = CV / I = (1uF × 2.5V)/ 5uA = 0.5 seconds
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TMPA221DS
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Differential input VS single ended input
Differential input offers better noise immunity over single ended input. A differential input
amplifier suppresses common noise and amplifies the difference voltage at the inputs.
For
single ended applications just tie the negative input end of the balanced input structure to
ground. If external input resistors are used, the negative input has to be grounded with a series
resistor of the same value as the positive input to reduce common noise.
Automatic output Power Control (APC)
The voltage gain is self adjusted in the chip over voltage range. This means that, regardless
supply voltage change, the output power keeps about the same for a given input level from
VDD=5.5v to 2.5v. It allows the best use of the battery.
Voltage gain
The voltage gain is defined in the table on page 3. For lower voltage gain one can add external
input resistors to input pins. If external resistors are used they should be well matched. Well
matched input resistors are also required even for single-ended input configuration for low
noise. If band pass filters are used for frequency separation please refer to following
discussion.
Band pass filter for frequency separation of bass and R/L channels
For best sound effect the frequency of bass and R/L channels has to be separated. The bass
channel amplifies the lower frequencies while the R/L channels amplify the higher frequencies.
The power is saved not to drive bass speaker with high frequencies and not to drive R/L
channel speakers with low frequencies. The noise level can be reduced as well. Typically the
frequency boundary of bass and R/L channels is set 500 Hz and the output power of bass is set
around 3~5 times of the R/L channels. Note that different applications may have different
requirement for these values. Please refer to EVM documentation if the separation frequency is
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200 Hz instead.
Bass channel filter
If the audio source is stereo (right channel signal and left channel signal) one can generate
audio source for bass amplifier by mixing right and left signals and in the mean time filter out
frequencies above 500 Hz. A typical application is shown below. Note that Zin=15k ohms is the
internal resistance of the class-D amplifier when gain0=gain1=High.
Rin
R1 12k
Lin
R1
Cin
12k
0.47uF
(R1)/2 12k//12k
C1
37nF
Cin
0.47uF
15k
Zin
Class-D amplifier
15k
Zin
The -3dB frequency at high frequency corner is f-3dB = 1/ (2πR C) where R=2(Zin // (R1)/2)
and C=C1. With specified values f-3dB = 500Hz.
The -3dB frequency at low frequency corner is calculated as f-3dB = 1/ (2πR C) where R=Zin +
(R1)/2
and C=Cin. With specified values f-3dB = 16Hz.
Right and Left channel filters
To block frequencies below 500Hz, a typical application is shown below.
Rin
Lin
R1
C1
22k
R1 22k
C2 8.6nF
0.9nF
C1
Zin
C2 8.6nF
0.9nF
Zin
15k
Class-D amplifier
15k
The -3dB frequency at low frequency corner is f-3dB = 1/ (2πR C) where R=Zin + R1 and
C=C1. With specified values f-3dB = 500Hz.
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The -3dB frequency at high frequency corner is f-3dB = 1/ (2πR C) where R=Zin // R1
and
C=C2. With specified values f-3dB = 20kHz.
Note that if gain0 and gain1 are set at different states the internal input resistance is changed
accordingly. Please refer to DC CHARACTERISTICS for detail. As such the filters should be
redesigned to meet the 500 Hz frequency boundary.
Power ratio of bass channel and right/left channels
The output power ratio of bass to R/L channels is normally set 3~5. However different music
has different stress in different frequency range. It becomes difficult to define a fix voltage gain
for different applications and to maintain the requirement of bass to R/L ratio. A convenient way
of controlling the ratio is to make bass adjustable relative to R/L channels. An easier way is to
use VR as shown below.
Rin
VR
R1 12k
Lin
VR
R1
12k
Cin
BINP
0.47uF
Cin
6k
Zin
BINN
0.47uF
Zin
Bass amplifier
Another way is to use frequency synthesizer to preset voltage gain for different frequency range
for particular music content.
For simply applications an example is given below to show 3X ratio between bass output power
and R/L output power.
For Vcc=15v and 8ohm load the voltage gain of the bass channel is around 32. If the power
ratio is 3 then the voltage ratio is 3 =1.732 and the gain of the R/L channel is 18.5. The
voltage gain of the R/L channels is roughly defined as
(750k ohms)/(Ri+15k ohms)
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resulting Ri= 25.5k ohms.
To meet the -3dB frequency of the R/L channels which is 500Hz, the filter capacitance should
be adjusted to
C= 1/(2π x (25.5k+15k ohms) x 500Hz) = 7.86nF.
For higher output power one can consider to use 4 ohm speaker for bass and 8 ohm
speakers for R/L channels. Suppose the power ratio is set 5X, then the voltage ratio is
5 / 2 =1.58. For Vcc=15v and 4ohm load the voltage gain of the bass channel is around 30.
Thus the gain of the R/L channel is 19.
The voltage gain of the R/L channels is defined as
(750k ohms)/(Ri+15k ohms)
resulting Ri= 24.5kohms .
To meet the -3dB frequency of the R/L channels which is 500Hz, the filter capacitance should
be adjusted to
C= 1/(2π x (24.5+15k ohms) x 500) = 8nF.
Note that the formula for voltage gain varies with supply voltage and loading. But the
procedure is to find out the value of Ri before the capacitance is determined.
Output coupling capacitor
The speaker of the bass channel is tied as BTL. There is no need to have an output capacitor at
the output end. But for right and left channels coupling capacitors are required to block DC from
the speakers. Since the right and left channels do not amplify frequencies below 500Hz the
output coupling capacitance does not have to be big. One can choose the -3dB frequency of
the output coupling stage to be 200Hz, not too high to attenuate voltage at 500Hz, then
the coupling capacitance is
C= 1/(2πx 8 ohm x 200Hz) =100uF for 8 ohm load.
or
C= 1/(2πx 4 ohm x 200Hz) =200uF for 4 ohm load.
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Input filter
In case band pass filter for frequency separation of bass and R/L channels is not used, the AC
coupling capacitors are still required to block the DC voltage from the device. They also define
the –3dB frequency at the low frequency side.
The –3dB frequency of the low frequency side is
f-3dB = 1/ (2πR C)
where C is the AC coupling capacitance and R is the total resistance in series with C.
Note that R=Zin(internal resistance) + Rext(external resistance)
Also note that the input resistance of BINN/BINP/LIN/RIN is 15K ohms at Gain0=Gain1=high.
Please refer to DC CHARACTERISTICS for detail.
Output filter
Ferrite bead filter can be used for EMI purpose. The ferrite filter reduces EMI around 1 MHz and
higher(FCC and CE only test radiated emissions greater than 30 MHz). When selecting a
ferrite bead, choose one with high impedance at high frequencies, but low impedance at low
frequencies.
Use an LC output filter if there are low frequency(<1 MHz)EMI sensitive circuits and/or there
are long wires from the amplifier to the speaker. EMI is also affected by PCB layout and the
placement of the surrounding components.
The suggested LC values for different speaker impendence are showed in following figures for
reference.
Typical LC Output Filter (1)
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33μH
Vo+
0.47µ F
0.1µ F
33μH
Vo0.1µ F
Typical LC Output Filter (2)
EARPHONE APPLICATION
Class-D output can be used to drive earphone. However to avoid high power to overdrive
earphone and to prevent human ear to accidentally be hurt by loud noise, a resistor has to be
put in series with the earphone speaker. Typically a resistor of 330 ohms is adequate for this
purpose.
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Over temperature protection
A temperature sensor is built in the device to detect the temperature inside the device.
When
a high temperature around 145 oC and above is detected the switching output signals are
disabled to protect the device from over temperature. Automatic recovery circuit enables the
device to come back to normal operation when the internal temperature of the device is below
around 120 oC.
Over current protection
A current detection circuit is built in the device to detect the switching current of the output
stages of the device. It disables the device when the current is beyond about 3.5amps. It
protects the device when there is an accident short between outputs or between output and
power/gnd pins. It also protects the device when an abnormal low impedance is tied to the
output. High current beyond the specification may potentially causes electron migration and
permanently damage the device. Shutdown or power down is necessary to resolve the
protection situation. There is no automatic recovery from over current protection.
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Physical Dimensions
December 24,
2007
(IN MILLIMETERS)
±
7.72 TYP
4.16 TYP
(1.78 TYP)
0.42 TYP
0.65 TYP
LAND PATTERN
TSSOP20
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TMPA221DS
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2007
IMPORTANT NOTICE
Tai-1 Microelectronics Corp. reserves the right to make changes to its products and services and to
discontinue any product or service without notice. Customers should obtain the latest relevant information for
reference. Testing and quality control techniques are used to screen the parameters. Testing of all parameters
of each product is not necessarily performed.
Tai-1 Microelectronics Corp. assumes no liability for applications assistance or customer product design. To
minimize the risks associated with customer products and applications, customers should provide adequate
design and operating safeguards.
Reproduction of information in data sheets or related documentation is permissible only if reproduction is
without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Tai-1
Microelectronics Corp. is not responsible or liable for such altered documentation.
Resale of Tai-1 Microelectronics Corp. products or services with statements different from the parameters
stated by Tai-1 Microelectronics Corp. for that product or service voids all express and any implied warranties.
Tai-1 Microelectronics Corp. is not responsible or liable for any such statements.
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