MICROCHIP 28C04A

28C04A
4K (512 x 8) CMOS EEPROM
PACKAGE TYPES
32 Vcc
31 WE
Vcc
A8
NC
WE
OE
NC
CE
I/O7
I/O6
I/O5
I/O4
I/O3
5
29 A8
6
28 NC
7
27 NC
28C04A
8
9
10
11
26 NC
25 OE
24 NC
23 CE
20
19
18
21 I/O6
17
22 I/O7
13
15
12
14
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
2 NC
1 NU
PLCC
24
23
22
21
20
19
18
17
16
15
14
13
30 NC
•1
2
3
4
5
6
7
8
9
10
11
12
4 A7
3 NC
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
16
DIP
28C04A
• Fast Read Access Time—150 ns
• CMOS Technology for Low Power Dissipation
- 30 mA Active
- 100 µA Standby
• Fast Byte Write Time—200 µs or 1 ms
• Data Retention >200 years
• Endurance - Minimum 104 Erase/Write Cycles
- Automatic Write Operation
- Internal Control Timer
- Auto-Clear Before Write Operation
- On-Chip Address and Data Latches
• Data Polling
• Chip Clear Operation
• Enhanced Data Protection
- VCC Detector
- Pulse Filter
- Write Inhibit
• 5-Volt-Only Operation
• Organized 512x8 JEDEC standard pinout
- 24-pin Dual-In-Line Package
- 32-pin PLCC Package
• Available for Extended Temperature Ranges:
- Commercial: 0˚C to +70˚C
- Industrial: -40˚C to +85˚C
I/O1
I/O2
Vss
NU
I/O3
I/O4
I/O5
FEATURES
• Pin 1 indicator on PLCC on top of package
BLOCK DIAGRAM
I/O0
DESCRIPTION
The Microchip Technology Inc. 28C04A is a CMOS 4K
non-volatile electrically Erasable and Programmable
Read Only Memory (EEPROM). The 28C04A is
accessed like a static RAM for the read or write cycles
without the need of external components. During a
“byte write”, the address and data are latched internally,
freeing the microprocessor address and data bus for
other operations. Following the initiation of write cycle,
the device will go to a busy state and automatically
clear and write the latched data using an internal control timer. To determine when a write cycle is complete,
the 28C04A uses Data polling. Data polling allows the
user to read the location last written to when the write
operation is complete. CMOS design and processing
enables this part to be used in systems where reduced
power consumption and reliability are required. A complete family of packages is offered to provide the utmost
flexibility in applications.
VSS
VCC
Data Protection
Circuitry
Chip Enable/
Output Enable
Control Logic
CE
OE
WE
I/O7
Auto Erase/Write
Timing
Data
Poll
Input/Output
Buffers
Program Voltage
Generation
A0
L
a
t
c
h
e
s
Y
Decoder
Y Gating
X
Decoder
4K bit
Cell Matrix
A8
 1996 Microchip Technology Inc.
DS11126F-page 1
This document was created with FrameMaker 4 0 4
28C04A
1.0
ELECTRICAL CHARACTERISTICS
1.1
MAXIMUM RATINGS*
TABLE 1-1:
PIN FUNCTION TABLE
Name
Function
VCC and input voltages w.r.t. VSS ....... -0.6V to + 6.25V
A0 - A8
Voltage on OE w.r.t. VSS...................... -0.6V to +13.5V
CE
Chip Enable
OE
Output Enable
WE
Write Enable
Output Voltage w.r.t. VSS .................-0.6V to VCC+0.6V
Storage temperature .......................... -65˚C to +125˚C
Ambient temp. with power applied ....... -50˚C to +95˚C
*Notice: Stresses above those listed under “Maximum Ratings”
may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any
other conditions above those indicated in the operation listings of
this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
TABLE 1-2:
I/O0 - I/O7
Address Inputs
Data Inputs/Outputs
VCC
+5V Power Supply
VSS
Ground
NC
No Connect; No Internal Connection
NU
Not Used; No External Connection is
Allowed
READ/WRITE OPERATION DC CHARACTERISTICS
VCC = +5V ±10%
Commercial (C): Tamb =
Industrial
(I): Tamb =
Parameter
0˚C to +70˚C
-40˚C to +85˚C
Status
Symbol
Min
Max
Units
Logic ‘1’
Logic ‘0’
VIH
VIL
2.0
-0.1
VCC+1
0.8
V
V
Input Leakage
ILI
-10
10
µA
VIN = -0.1V to VCC+1
Input Capacitance
CIN
10
pF
VIN = 0V; Tamb = 25˚C;
f = 1 MHz
0.45
V
V
IOH = -400 µA
IOL = 2.1 mA
10
µA
VOUT = -0.1V TO VCC + 0.1V
COUT
12
pF
VIN = 0V; TAMB = 25˚C;
f = 1 MHz
ICC
30
mA
f = 5 MHz (Note 1)
VCC = 5.5V
2
3
100
mA
mA
µA
CE = VIH (0˚C to +70˚C)
CE = VIH (-40˚C to +85˚C)
CE = VCC-0.3 to Vcc+1
Input Voltages
Output Voltages
Logic ‘1’
Logic ‘0’
Output Leakage
Output Capacitance
Power Supply Current, Active
Power Supply Current, Standby
TTL input
VOH
VOL
2.4
ILO
-10
TTL input
ICC(S)TTL
TTL input
ICC(S)TTL
CMOS input ICC(S)CMOS
Conditions
Note 1: AC power supply current above 5 MHz; 1 mA/MHz.
DS11126F-page 2
 1996 Microchip Technology Inc.
28C04A
TABLE 1-3:
READ OPERATION AC CHARACTERISTICS
AC Testing Waveform:
Output Load:
Input Rise and Fall Times:
Ambient Temperature:
Parameter
VIH = 2.4V; VIL = 0.45V; VOH = 2.0V; VOL = 0.8V
1 TTL Load + 100 pF
20 ns
Commercial (C): Tamb = 0˚C to +70˚C
Industrial
(I): Tamb = -40˚C to +85˚C
28C04A-15
28C04A-20
28C04A-25
Min
Min
Min
Sym
Units
Max
Max
Conditions
Max
Address to Output Delay
tACC
150
200
250
ns
OE = CE = VIL
CE to Output Delay
tCE
150
200
250
ns
OE = VIL
OE to Output Delay
tOE
70
80
100
ns
CE = VIL
CE to OE High Output Float
tOFF
0
70
ns
Output Hold from Address, CE
or OE, whichever occurs first
tOH
0
Endurance
—
1M
50
0
55
0
—
1M
0
0
—
1M
ns
—
cycles 25°C, Vcc =
5.0V, Block
Mode (Note)
Note: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total Endurance Model which can be obtained on our BBS or website.
FIGURE 1-1:
READ WAVEFORMS
VIH
Address
Address Valid
VIL
VIH
CE
VIL
t CE(2)
VIH
OE
VIL
VOH
Data
t OE(2)
High Z
t OFF(1,3)
t OH
Valid Output
High Z
VOL
WE
VIH
t ACC
VIL
Notes: (1) tOFF is specified for OE or CE, whichever occurs first
(2) OE may be delayed up to t CE - t OE after the falling edge of CE without impact on tCE
(3) This parameter is sampled and is not 100% tested
 1996 Microchip Technology Inc.
DS11126F-page 3
28C04A
TABLE 1-4:
BYTE WRITE AC CHARACTERISTICS
AC Testing Waveform:
Output Load:
Input Rise/Fall Times:
Ambient Temperature:
Parameter
VIH = 2.4V; VIL = 0.45V; VOH = 2.0V; VOL = 0.8V
1 TTL Load + 100 pF
20 nsec
Commercial (C): Tamb= 0˚C to 70˚C
Industrial
(I): Tamb= -40˚C to 85˚C
Symbol
Min
Max
Units
Remarks
Address Set-Up Time
tAS
10
ns
Address Hold Time
tAH
50
ns
Data Set-Up Time
tDS
50
ns
Data Hold Time
tDH
10
ns
Write Pulse Width
tWPL
100
ns
Write Pulse High Time
tWPH
50
ns
OE Hold Time
tOEH
10
ns
OE Set-Up Time
tOES
10
ns
Data Valid Time
tDV
1000
ns
Note 2
Write Cycle Time (28C04A)
tWC
1
ms
0.5 ms typical
Write Cycle Time (28C04AF)
tWC
200
µs
100 µs typical
Note 1
Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the positive edge of CE or WE, whichever occurs first.
2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until tDH after
the positive edge of WE or CE, whichever occurs first.
FIGURE 1-2:
PROGRAMMING WAVEFORMS
VIH
Address
VIL
VIH
t AS
t AH
t WPL
CE, WE
VIL
t DV
Data In
t DS
t DH
VIH
VIL
t OES
VIH
OE
VIL
t OEH
DS11126F-page 4
 1996 Microchip Technology Inc.
28C04A
FIGURE 1-3:
DATA POLLING WAVEFORMS
VIH
Last Written
Address Valid
Address Valid
Address
VIL
t ACC
VIH
CE
t CE
VIL
t WPH
VIH
t WPL
WE
VIL
t OE
VIH
OE
VIL
t DV
VIH
Data In
Valid
Data
VIL
I/O7 Out
True Data Out
t WC
FIGURE 1-4:
CHIP CLEAR WAVEFORMS
VIH
CE
VIL
VH
OE
VIH
tS
tW
tH
VIH
WE
VIL
 1996 Microchip Technology Inc.
tW = 10ms
tS = tH = 1µs
VH = 12.0V ±0.5V
DS11126F-page 5
28C04A
2.0
DEVICE OPERATION
2.4
The Microchip Technology Inc. 28C04A has four basic
modes of operation—read, standby, write inhibit, and
byte write—as outlined in the following table.
Operation
Mode
CE
IE
WE
I/O
Read
L
L
H
DOUT
Standby
H
X
X
High Z
Write Inhibit
H
X
X
High Z
Write Inhibit
X
L
X
High Z
Write Inhibit
X
X
H
High Z
Byte Write
L
H
L
DIN
Byte Clear
Automatic Before Each “Write”
X = Any TTL level.
2.1
Read Mode
The 28C04A has two control functions, both of which
must be logically satisfied in order to obtain data at the
outputs. Chip enable (CE) is the power control and
should be used for device selection. Output Enable
(OE) is the output control and is used to gate data to the
output pins independent of device selection. Assuming
that addresses are stable, address access time (tACC)
is equal to the delay from CE to output (tCE). Data is
available at the output tOE after the falling edge of OE,
assuming that CE has been low and addresses have
been stable for at least tACC-tOE.
2.2
Write Mode
The 28C04A has a write cycle similar to that of a Static
RAM. The write cycle is completely self-timed and initiated by a low going pulse on the WE pin. On the falling
edge of WE, the address information is latched. On rising edge, the data and the control pins (CE and OE) are
latched.
2.5
Data Polling
The 28C04A features Data polling to signal the completion of a byte write cycle. During a write cycle, an
attempted read of the last byte written results in the
data complement of I/O7 (I/O0 to I/O6 are indeterminable). After completion of the write cycle, true data is
available. Data polling allows a simple read/compare
operation to determine the status of the chip eliminating
the need for external hardware.
2.6
Chip Clear
All data may be cleared to 1's in a chip clear cycle by
raising OE to 12 volts and bringing the WE and CE low.
This procedure clears all data.
Standby Mode
The 28C04A is placed in the standby mode by applying
a high signal to the CE input. When in the standby
mode, the outputs are in a high impedance state, independent of the OE input.
2.3
Data Protection
In order to ensure data integrity, especially during critical power-up and power-down transitions, the following
enhanced data protection circuits are incorporated:
First, an internal VCC detect (3.3 volts typical) will inhibit
the initiation of non-volatile programming operation
when VCC is less than the VCC detect circuit trip.
Second, there is a WE filtering circuit that prevents WE
pulses of less than 10 ns duration from initiating a write
cycle.
Third, holding WE or CE high or OE low, inhibits a write
cycle during power-on and power-off (VCC).
DS11126F-page 6
 1996 Microchip Technology Inc.
28C04A
28C04A Product Identification System
To order or to obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed
sales offices.
28C04A F T – 15 I
/P
Package:
Temperature
Range:
Access Time:
Blank = 0°C to +70°C
I = -40°C to +85°C
15
20
25
150 ns
200 ns
250 ns
Shipping:
Blank
T
Option:
Blank = twc = 1ms
F = twc = 200 µs
Device:
 1996 Microchip Technology Inc.
L = Plastic Leaded Chip Carrier (PLCC)
P = Plastic DIP (600mill)
28C04A
Tube
Tape and Reel “L” only
512 x 8 CMOS EEPROM
DS11126F-page 7
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9/3/96
All rights reserved.  1996, Microchip Technology Incorporated, USA. 9/96
Printed on recycled paper.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement
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DS11126F-page 8
 1996 Microchip Technology Inc.