TI SN74ALS229BN

SN74ALS229B
16 × 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS090 – MARCH 1990 – REVISED JUNE 1992
D
D
D
D
D
D
Independent Asychronous Inputs and
Outputs
16 Words by 5 Bits
Data Rates From 0 to 40 MHz
Fall-Through Time . . . 14 ns Typ
3-State Outputs
Package Options Include Plastic
Small-Outline Packages (DW), Plastic Chip
Carriers (FN), and Standard Plastic 300-mil
DIPs (N)
description
DW OR N PACKAGE
(TOP VIEW)
OE
FULL–2
FULL
LDCK
D0
D1
D2
D3
D4
GND
This 80-bit memory uses advanced low-power
Schottky technology and features high speed and
fast fall-through times. It is organized as 16 words
by 5 bits.
Data is written into memory on a low-to-high
transition at the load clock (LDCK) input and is
read out on a low-to-high transition at the unload
clock (UNCK). The memory is full when the
number of words clocked in exceeds by 16 the
number of words clocked out. When the memory
is full, LDCK signals have no effect. When the
memory is empty, UNCK signals have no effect.
20
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
10
11
VCC
EMPTY+2
UNCK
EMPTY
Q0
Q1
Q2
Q3
Q4
RST
FULL
FULL–2
OE
VCC
EMPTY+2
FN PACKAGE
(TOP VIEW)
LDCK
D0
D1
D2
D3
4
3 2 1 20 19
18
5
17
6
16
7
15
8
14
9 10 11 12 13
UNCK
EMPTY
Q0
Q1
Q2
D4
GND
RST
Q4
Q3
A FIFO memory is a storage device that allows
data to be written into and read from its array at
independent data rates. This FIFO is designed to
process data at rates from 0 to 40 MHz in a
bit-parallel format, word by word.
1
Status of the FIFO memory is monitored by the FULL, EMPTY, FULL–2, and FULL+2 output flags. The FULL
output is low when the memory is full and high when it is not full. The FULL–2 output is low when the memory
contains 14 data words. The EMPTY output is low when the memory is empty and high when it is not empty.
The EMPTY+2 output is low when two words remain in memory.
A low level on the reset (RST) input resets the internal stack control pointers and also sets EMPTY low and sets
FULL, FULL–2, and EMPTY+2 high. The Q outputs are not reset to any specific logic level. The first low-to-high
transition on LDCK after either a RST pulse or from an empty condition causes EMPTY to go high and the data
to appear on the Q outputs. It is important to note that the first word does not have to be unloaded. Data outputs
are noninverting with respect to the data inputs and are at high impedance when the output-enable (OE) input
is low. OE does not affect the output flags. Cascading is easily accomplished in the word-width direction but is
not possible in the word-depth direction.
The SN74ALS229B is characterized for operation from 0°C to 70°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright  1992, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
SN74ALS229B
16 × 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS090 – MARCH 1990 – REVISED JUNE 1992
logic symbol†
FIFO 16 × 5
CTR
RST
LDCK
UNCK
OE
D0
D1
D2
D3
D4
11
4
18
CT = 0
CT = 14
1(+/C2)
3–
1
5
6
(CT = 16) G1
CT = 2
(CT = 0) G3
3
2
19
17
FULL
FULL–2
EMPTY+2
EMPTY
EN4
2D
4
16
15
7
14
8
13
9
12
Q0
Q1
Q2
Q3
Q4
† This symbol is in accordance with ANSI/IEEE Standard 91-1984 and IEC Publication 617-12. The symbol is functionally accurate but does not
show the details of implementation; for these, see the logic diagram. The symbol represents the memory as if it were controlled by a single counter
whose content is the number of words stored at the time. Output data is invalid when the counter content (CT) is 0.
Pin numbers shown are for the DW and N packages.
2
POST OFFICE BOX 655303
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SN74ALS229B
16 × 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS090 – MARCH 1990 – REVISED JUNE 1992
logic diagram (positive logic)
OE
1
Ring
Counter
CTR
DIV 16
1D
4
C1
LDCK
S
R
18
Ring
Counter
CTR
DIV 16
1
2
3
4
5
6
7
8
+
9
10
Read 11
Address 12
13
14
CT = 1
15
16
C1
UNCK
1
2
3
4
5
6
7
8
+
9
10
Write
11
Address 12
13
14
CT = 1
15
16
1D
11
RST
16
RAM 16 × 5
EN
16
16
1A
1
16
2A
1
16
C3
D0
D1
D2
D3
D4
16
5
1A, 3D
6
2A
16
15
7
14
8
13
9
12
16
Q0
Q1
Q2
Q3
Q4
COMP
P=Q
17
P
Q
EMPTY
S
P=Q+2
3
P=Q–2
R
2
19
FULL
FULL–2
EMPTY+2
Pin numbers shown are for the DW and N packages.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
SN74ALS229B
16 × 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS090 – MARCH 1990 – REVISED JUNE 1992
timing diagram
RST
LDCK
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
D0 – D4
W1
W2
Don’t Care
W3
W1
W2
W3
W14
W15
W16
UNCK
Q0 – Q4
Invalid
Word 1
Word 2
Word 3
Invalid
Word 1
Word 2
Word 3
Word 4
EMPTY
EMPTY+2
FULL
FULL – 2
Initialize
Pointers
Unload
W2
Empty
Empty + 2
Full – 2
Full
Load
W1
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Input voltage, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Voltage applied to a disabled 3-state output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
SN74ALS229B
16 × 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS090 – MARCH 1990 – REVISED JUNE 1992
recommended operating conditions (see Note 1)
VCC
VIH
Supply voltage
VIL
Low-level input voltage
IOH
High level output current
High-level
IOL
Low level output current
Low-level
fclock
l k
Clock frequency
High-level input voltage
tw
Pulse duration
tsu
Setup time
th
TA
Hold time
MIN
NOM
MAX
4.5
5
5.5
2
Q outputs
– 1.6
Status flags
– 0.4
Q outputs
24
Status flags
8
LDCK
0
40
UNCK
0
40
18
LDCK low
15
LDCK high
10
UNCK low
15
UNCK high
10
Data before LDCK↑
8
RST (inactive) before LDCK↑
5
LDCK (inactive) before RST↑
5
Data after LDCK↑
5
Operating free-air temperature
V
V
0.8
RST low
UNIT
V
mA
mA
MHz
ns
ns
ns
0
70
°C
NOTE 1: To ensure proper operation of this high-speed FIFO device, it is necessary to provide a clean signal to the LDCK and UNCK clock inputs.
Any excessive noise or glitching on the clock inputs that violates the VIL, VIH, or minimum pulse duration limits can cause a false clock
or improper operation of the internal read and write pointers.
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
VIK
VOH
Q outputs
Status flags
Q outputs
VOL
Status flags
IOZH
IOZL
II
IIH
IIL
IO‡
TEST CONDITIONS
MIN
TYP†
MAX
UNIT
– 1.2
V
VCC = 4.5 V,
VCC = 4.5 V,
II = – 18 mA
IOL = – 2.6 mA
VCC = 4.5 V to 5.5 V,
VCC = 4.5 V,
IOL = – 0.4 mA
IOL = 12 mA
0.25
0.4
VCC = 4.5 V,
VCC = 4.5 V,
IOL = 24 mA
IOL = 4 mA
0.35
0.5
0.25
0.4
VCC = 4.5 V,
VCC = 5.5 V,
IOL = 8 mA
VO = 2.7 V
0.35
0.5
VCC = 5.5 V,
VCC = 5.5 V,
VO = 0.4 V
VI = 7 V
VCC = 5.5 V,
VCC = 5.5 V,
VI = 2.7 V
VI = 0.4 V
2.4
3.2
V
VCC – 2
20
V
µA
– 20
µA
0.1
mA
20
µA
– 0.2
mA
VCC = 5.5 V,
VO = 2.25 V
– 30
– 112
mA
ICC
VCC = 5.5 V
85
140
mA
† All typical values are at VCC = 5 V, TA = 25°C.
‡ The output conditions have been chosen to produce a current that closely approximates one half of the true short-circuit output current, IOS.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
SN74ALS229B
16 × 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS090 – MARCH 1990 – REVISED JUNE 1992
switching characteristics (see Figure 1)
TO
(OUTPUT)
VCC = 4.5 V to 5.5 V,
CL = 50 pF,
R1 = 500 Ω,
R2 = 500 Ω,
TA = 0°C to 70°C
PARAMETER
FROM
(INPUT)
fmax
LDCK, UNCK
40
LDCK↑
6
30
6
30
5
25
6
27
5
26
7
33
9
35
9
33
7
33
9
35
MIN
tpd
d
tPLH
tPHL
tPHL
tpd
d
tPLH
tpd
d
tPLH
tPHL
tPLH
ten
tdis
6
UNCK↑
Any Q
LDCK↑
UNCK↑
RST↓
EMPTY
EMPTY
LDCK↑
UNCK↑
RST↓
EMPTY 2
EMPTY+2
EMPTY+2
LDCK↑
UNCK↑
FULL 2
FULL–
UNIT
MAX
MHz
ns
ns
ns
ns
ns
ns
RST↓
FULL– 2
9
33
ns
LDCK↑
FULL
6
27
ns
5
25
8
31
UNCK↑
FULL
RST↓
ns
OE↑
Q
2
15
ns
OE↓
Q
1
15
ns
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
SN74ALS229B
16 × 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS090 – MARCH 1990 – REVISED JUNE 1992
PARAMETER MEASUREMENT INFORMATION
7V
SWITCH POSITION TABLE
Open
S1
R1 = 500 Ω
From Output
Under Test
CL = 50 pF
(see Note A)
Test Point
R2 = 500 Ω
TEST
S1
tPLH
tPHL
Open
Open
tPZH
tPZL
Open
Closed
tPHZ
Open
tPLZ
Closed
LOAD CIRCUIT FOR 3-STATE OUTPUTS
3.5 V
High-Level
Pulse
1.3 V
0.3 V
tw
3.5 V
Timing
Input
1.3 V
0.3 V
th
tsu
1.3 V
1.3 V
0.3 V
VOLTAGE WAVEFORMS
PULSE DURATION
1.3 V
1.3 V
3.5 V
Low-Level
Pulse
3.5 V
Data
Input
1.3 V
0.3 V
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
3.5 V
Output
Control
1.3 V
tPZL
1.3 V
tPLZ
0.3 V
tPHL
tPLH
In-Phase
Output
VOH
1.3 V
VOL
1.3 V
Out-of-Phase
Output
3.5 V
Waveform 1
S1 Closed
(see Note C)
VOH
1.3 V
1.3 V
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
1.3 V
tPHZ
tPLH
tPHL
1.3 V
0.3 V
3.5 V
Input
(see Note B)
1.3 V
tPZH
Waveform 2
S1 Open
(see Note C)
VOL
0.3 V
VOH
1.3 V
0.3 V
0V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES, 3-STATE OUTPUTS
NOTES: A. CL includes probe and jig capacitance.
B. All input pulses are supplied by generators having the following characteristics: PRR ≤ 1 MHz, Zo = 50 Ω, tr ≤ 2 ns, tf ≤ 2 ns.
C. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
D. The outputs are measured one at a time with one transition per measurement.
Figure 1. Load Circuit and Voltage Waveforms
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7
SN74ALS229B
16 × 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS090 – MARCH 1990 – REVISED JUNE 1992
8
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
PACKAGE OPTION ADDENDUM
www.ti.com
6-Dec-2006
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
SN74ALS229BDW
ACTIVE
SOIC
DW
20
25
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN74ALS229BN
ACTIVE
PDIP
N
20
20
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
SN74ALS229BN
ACTIVE
PDIP
N
20
20
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
SN74ALS229BN
ACTIVE
PDIP
N
20
20
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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