ICSI IS62LV1024L-70B

IS62LV1024L
IS62LV1024L/LL
IS62LV1024LL
128K x 8 LOW POWER and LOW Vcc
CMOS STATIC RAM
FEATURES
• Access times of 45, 55, and 70 ns
• Low active power: 60 mW (typical)
• Low standby power: 15 µW (typical) CMOS
standby
• Low data retention voltage: 2V (min.)
• Available in Low Power (-L) and
Ultra Low Power (-LL)
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• TTL compatible inputs and outputs
• Single 2.7V to 3.6V power supply
DESCRIPTION
The 1+51 IS62LV1024L and IS62LV1024LL are low power
and low Vcc,131,072-word by 8-bit CMOS static RAMs. They
are fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circuit
design techniques, yields higher performance and low power
consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs, CE1 and CE2. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS62LV1024L and IS62LV1024LL are available in 32-pin
8*20mm TSOP-1, 8*13.4mm TSOP-1, 450mil SOP and 48-pin
6*8mm TF-BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
512 X 2048
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
VCC
GND
I/O0-I/O7
CE1
CE2
OE
WE
CONTROL
CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001
1
IS62LV1024L/LL
PIN CONFIGURATION
PIN CONFIGURATION
32-Pin SOP
32-Pin 8x20mm TSOP-1 and 8x13.4mm TSOP-1
NC
1
32
VCC
A16
2
31
A15
A14
3
30
CE2
A12
4
29
WE
A7
5
28
A13
A6
6
27
A8
A5
7
26
A9
A4
8
25
A11
A3
9
24
OE
A2
10
23
A10
A1
11
22
CE1
A0
12
21
I/O7
I/O0
13
20
I/O6
I/O1
14
19
I/O5
I/O2
15
18
I/O4
GND
16
17
I/O3
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
48-Pin 6x8mm TF-BGA
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PIN DESCRIPTIONS
A0-A16
Address Inputs
CE1
Chip Enable 1 Input
1
2
3
4
5
6
CE2
Chip Enable 2 Input
A
A0
A1
CE2
A3
A6
A8
OE
Output Enable Input
B
I/O5
A2
WE
A4
A7
I/O1
WE
Write Enable Input
C
I/O6
NC
A5
I/O2
I/O0-I/O7
Input/Output
D
GND
Vcc
NC
No Connection
E
Vcc
GND
Vcc
Power
F
I/O7
I/O3
GND
Ground
G
I/O8
H
A9
NC
NC
OE
CE1
A16
A15
I/O4
A10
A11
A12
A13
A14
OPERATING RANGE
Range
Commercial
Industrial
2
Ambient Temperature
0°C to +70°C
VCC
2.7V to 3.6V
–40°C to +85°C
2.7V to 3.6V
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001
IS62LV1024L/LL
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE
CE1
CE2
OE
X
X
H
H
L
H
X
L
L
L
X
L
H
H
H
X
X
H
L
X
I/O Operation
High-Z
High-Z
High-Z
DOUT
DIN
Vcc Current
ISB, ISB
ISB, ISB
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
VCC
TBIAS
TSTG
PT
Parameter
Terminal Voltage with Respect to GND
Vcc related to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
–0.5 to Vcc + 0.5
–0.3 to +4.6
–40 to +85
–65 to +150
0.7
Unit
V
V
°C
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol
Parameter
CIN
Input Capacitance
COUT
Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
VOL
VIH
VIL
ILI
ILO
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
VCC = Min., IOH = –1.0 mA
VCC = Min., IOL = 2.1 mA
2.2
—
2.2
–0.3
–1
–1
—
0.4
VCC + 0.3
0.4
1
1
V
V
V
V
µA
µA
GND ≤ VIN ≤ VCC
GND ≤ VOUT ≤ VCC
Notes:
1. VIL = –3.0V for pulse width less than 10 ns.
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001
3
IS62LV1024L/LL
IS62LV1024L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-45L ns
Min. Max.
-55L ns
Min. Max.
-70L ns
Min. Max.
Symbol Parameter
Test Conditions
Unit
ICC
Vcc Dynamic Operating
Supply Current
VCC = Max., CE = VIL
IOUT = 0 mA, f = fMAX
Com.
Ind.
—
—
40
45
—
—
35
40
—
—
30
35
mA
ISB
TTL Standby Current
(TTL Inputs)
VCC = Max.,
Com.
VIN = VIH or VIL, CE1 ≥ VIH Ind.
or CE2 ≤ VIL, f = 0
—
—
0.3
0.4
—
—
0.3
0.4
—
—
0.3
0.4
mA
ISB
CMOS Standby
Current (CMOS Inputs)
VCC = Max., f = 0
Com.
CE1 ≥ VCC – 0.2V,
Ind.
CE2 ≤ 0.2V,
or VIN ≥ VCC – 0.2V, VIN ≤ 0.2V
—
—
50
75
—
—
50
75
—
—
50
75
µA
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
IS62LV1024LL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-45LL ns
Min. Max.
-55LL ns
Min. Max.
-70LL ns
Min. Max.
Symbol Parameter
Test Conditions
Unit
ICC
Vcc Dynamic Operating
Supply Current
VCC = Max., CE = VIL
IOUT = 0 mA, f = fMAX
Com.
Ind.
—
—
40
45
—
—
35
40
—
—
30
35
mA
ISB
TTL Standby Current
(TTL Inputs)
VCC = Max.,
Com.
VIN = VIH or VIL, CE1 ≥ VIH Ind.
or CE2 ≤ VIL, f = 0
—
—
0.2
0.3
—
—
0.2
0.3
—
—
0.2
0.3
mA
ISB
CMOS Standby
Current (CMOS Inputs)
VCC = Max., f = 0
Com.
CE1 ≥ VCC – 0.2V,
Ind.
CE2 ≤ 0.2V,
or VIN ≥ VCC – 0.2V, VIN ≤ 0.2V
—
—
5
10
—
—
5
10
—
—
5
10
µA
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
4
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001
IS62LV1024L/LL
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-45
Symbol
Parameter
-55
-70
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tRC
Read Cycle Time
45
—
55
—
70
—
ns
tAA
Address Access Time
—
45
—
55
—
70
ns
tOHA
Output Hold Time
10
—
10
—
10
—
ns
tACE
CE1 Access Time
—
45
—
55
—
70
ns
tACE
CE2 Access Time
—
45
—
55
—
70
ns
OE Access Time
—
20
—
25
—
35
ns
OE to Low-Z Output
0
—
5
—
5
—
ns
OE to High-Z Output
0
15
0
20
0
25
ns
tLZCE CE1 to Low-Z Output
5
—
7
—
10
—
ns
tLZCE
CE2 to Low-Z Output
5
—
7
—
10
—
ns
CE1 or CE2 to High-Z Output
0
15
0
20
0
25
ns
tDOE
tLZOE
tHZOE
tHZCE
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to 2.2V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0.4V to 2.2V
5 ns
1.5V
See Figures 1
AC TEST LOADS
1 TTL
OUTPUT
1 TTL
OUTPUT
100 pF
Including
jig and
scope
Figure 1.
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001
5 pF
Including
jig and
scope
Figure 2.
5
IS62LV1024L/LL
AC WAVEFORMS
READ CYCLE NO. 1(1,2)
tRC
ADDRESS
tAA
tOHA
tOHA
DOUT
DATA VALID
READ CYCLE NO. 2(1,3)
tRC
ADDRESS
tAA
tOHA
OE
tDOE
CE1
tHZOE
tLZOE
tACE1/tACE2
CE2
DOUT
tLZCE1/
tLZCE2
HIGH-Z
tHZCE
DATA VALID
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH.
3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions.
6
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001
IS62LV1024L/LL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range, Standard and Low
Power)
-45
Symbol
Parameter
-55
-70
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tWC
Write Cycle Time
45
—
55
—
70
—
ns
tSCE
CE1 to Write End
35
—
50
—
60
—
ns
tSCE
CE2 to Write End
35
—
50
—
60
—
ns
tAW
Address Setup Time to Write End
35
—
50
—
60
—
ns
tHA
Address Hold from Write End
0
—
0
—
0
—
ns
Address Setup Time
0
—
0
—
0
—
ns
tPWE
WE Pulse Width
35
—
40
—
55
—
ns
tSD
Data Setup to Write End
25
—
25
—
30
—
ns
tSA
"
tHD
Data Hold from Write End
0
—
0
—
0
—
ns
tHZWE
WE LOW to High-Z Output
—
15
—
20
0
25
ns
tLZWE
WE HIGH to Low-Z Output
5
—
5
—
5
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to 2.2V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
4. Tested with OE HIGH.
AC WAVEFORMS
WRITE CYCLE NO. 1 (99- Controlled)(1,2)
tWC
ADDRESS
tHA
tSCE1
CE1
tSCE2
CE2
tAW
tPWE(4)
WE
tSA
DOUT
DATA UNDEFINED
tHZWE
tLZWE
HIGH-Z
tSD
DIN
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001
tHD
DATA-IN VALID
7
IS62LV1024L/LL
WRITE CYCLE NO. 2 (+-
+-, CE2 Controlled)(1,2)
+-
tWC
ADDRESS
tSA
tHA
tSCE1
CE1
tSCE2
CE2
tAW
tPWE(4)
WE
tHZWE
DOUT
tLZWE
HIGH-Z
DATA UNDEFINED
tHD
tSD
DIN
DATA-IN VALID
Notes:
1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if OE = VIH.
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol
Parameter
Test Condition
Min.
Max.
Unit
VDR
Vcc for Data Retention
See Data Retention Waveform
2.0
3.6
V
IDR
Data Retention Current
Vcc = 2.0V, CE1 ≥ Vcc – 0.2V
—
—
—
—
30
5
50
10
µA
µA
µA
µA
tSDR
Data Retention Setup Time
See Data Retention Waveform
0
—
ns
tRDR
Recovery Time
See Data Retention Waveform
tRC
—
ns
Com. (-L)
Com. (-LL)
Ind. (-L)
Ind. (-LL)
DATA RETENTION WAVEFORM (+-
+- Controlled)
tSDR
3.0V
2.2V
tRDR
VCC
VDR
CE1
GND
8
Data Retention Mode
CE1 ≥ VCC - 0.2V
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001
IS62LV1024L/LL
DATA RETENTION WAVEFORM (CE2 Controlled)
Data Retention Mode
3.0V
VCC
tSDR
CE2
2.2V
tRDR
VDR
CE2 ≤ 0.2V
0.4V
GND
IS62LV1024L
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
IS62LV1024L
ORDERING INFORMATION
Industrial Range: –40°C to +85°C
Speed (ns) Order Part No.
Speed (ns) Order Part No.
Package
Package
45
IS62LV1024L-45Q
IS62LV1024L-45T
IS62LV1024L-45H
IS62LV1024L-45B
450mil SOP
8*20mm TSOP-1
8*13.4mm TSOP-1
6*8mm TF-BGA
45
IS62LV1024L-45QI
IS62LV1024L-45TI
IS62LV1024L-45HI
IS62LV1024L-45BI
450mil SOP
8*20mm TSOP-1
8*13.4mm TSOP-1
6*8mm TF-BGA
55
IS62LV1024L-55Q
IS62LV1024L-55T
IS62LV1024L-55H
IS62LV1024L-55B
450mil SOP
8*20mm TSOP-1
8*13.4mm TSOP-1
6*8mm TF-BGA
55
IS62LV1024L-55QI
IS62LV1024L-55TI
IS62LV1024L-55HI
IS62LV1024L-55BI
450mil SOP
8*20mm TSOP-1
8*13.4mm TSOP-1
6*8mm TF-BGA
70
IS62LV1024L-70Q
IS62LV1024L-70T
IS62LV1024L-70H
IS62LV1024L-70B
450mil SOP
8*20mm TSOP-1
8*13.4mm TSOP-1
6*8mm TF-BGA
70
IS62LV1024L-70QI
IS62LV1024L-70TI
IS62LV1024L-70HI
IS62LV1024L-70BI
450mil SOP
8*20mm TSOP-1
8*13.4mm TSOP-1
6*8mm TF-BGA
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001
9
IS62LV1024L/LL
IS62LV1024LL
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
IS62LV1024LL
ORDERING INFORMATION
Industrial Range: –40°C to +85°C
Speed (ns) Order Part No.
Speed (ns) Order Part No.
Package
Package
45
IS62LV1024LL-45Q
IS62LV1024LL-45T
IS62LV1024LL-45H
IS62LV1024LL-45B
450mil SOP
8*20mm TSOP-1
8*13.4mm TSOP-1
6*8mm TF-BGA
45
IS62LV1024LL-45QI
IS62LV1024LL-45TI
IS62LV1024LL-45HI
IS62LV1024LL-45BI
450mil SOP
8*20mm TSOP-1
8*13.4mm TSOP-1
6*8mm TF-BGA
55
IS62LV1024LL-55Q
IS62LV1024LL-55T
IS62LV1024LL-55H
IS62LV1024LL-55B
450mil SOP
8*20mm TSOP-1
8*13.4mm TSOP-1
6*8mm TF-BGA
55
IS62LV1024LL-55QI
IS62LV1024LL-55TI
IS62LV1024LL-55HI
IS62LV1024LL-55BI
450mil SOP
8*20mm TSOP-1
8*13.4mm TSOP-1
6*8mm TF-BGA
70
IS62LV1024LL-70Q
IS62LV1024LL-70T
IS62LV1024LL-70H
IS62LV1024LL-70B
450mil SOP
8*20mm TSOP-1
8*13.4mm TSOP-1
6*8mm TF-BGA
70
IS62LV1024LL-70QI
IS62LV1024LL-70TI
IS62LV1024LL-70HI
IS62LV1024LL-70BI
450mil SOP
8*20mm TSOP-1
8*13.4mm TSOP-1
6*8mm TF-BGA
Integrated Circuit Solution Inc.
HEADQUARTER:
NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK,
HSIN-CHU, TAIWAN, R.O.C.
TEL: 886-3-5780333
Fax: 886-3-5783000
BRANCH OFFICE:
7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD,
HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C.
TEL: 886-2-26962140
FAX: 886-2-26962252
http://www.icsi.com.tw
10
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001