INTEL TE28F160S3-120

E
ADVANCE INFORMATION
WORD-WIDE
FlashFile™ MEMORY FAMILY
28F160S3, 28F320S3
Includes Extended Temperature Specifications
n
n
n
n
n
n
Two 32-Byte Write Buffers
 2.7 µs per Byte Effective
Programming Time
Low Voltage Operation
 2.7V or 3.3V VCC
 2.7V, 3.3V or 5V V PP
100 ns Read Access Time (16 Mbit)
110 ns Read Access Time (32 Mbit)
High-Density Symmetrically-Blocked
Architecture
 32 64-Kbyte Erase Blocks (16 Mbit)
 64 64-Kbyte Erase Blocks (32 Mbit)
System Performance Enhancements
 STS Status Output
Industry-Standard Packaging
 µBGA* package, SSOP, and
TSOP (16 Mbit)
 µBGA* package and SSOP (32 Mbit)
n
n
n
n
n
n
Cross-Compatible Command Support
 Intel Standard Command Set
 Common Flash Interface (CFI)
 Scaleable Command Set (SCS)
100,000 Block Erase Cycles
Enhanced Data Protection Features
 Absolute Protection with V PP = GND
 Flexible Block Locking
 Block Erase/Program Lockout
during Power Transitions
Configurable x8 or x16 I/O
Automation Suspend Options
 Program Suspend to Read
 Block Erase Suspend to Program
 Block Erase Suspend to Read
ETOX™ V Nonvolatile Flash
Technology
Intel’s Word-Wide FlashFile™ memory family provides high-density, low-cost, non-volatile, read/write storage
solutions for a wide range of applications. The Word-Wide FlashFile memories are available at various
densities in the same package type. Their symmetrically-blocked architecture, flexible voltage, and extended
cycling provide highly flexible components suitable for resident flash arrays, SIMMs, and memory cards.
Enhanced suspend capabilities provide an ideal solution for code or data storage applications. For secure
code storage applications, such as networking, where code is either directly executed out of flash or
downloaded to DRAM, the Word-Wide FlashFile memories offer three levels of protection: absolute protection
with VPP at GND, selective block locking, and program/erase lockout during power transitions. These
alternatives give designers ultimate control of their code security needs.
This family of products is manufactured on Intel’s 0.4 µm ETOX™ V process technology. It comes in the
industry-standard 56-lead SSOP and µBGA packages. In addition, the 16-Mb device is available in the
industry-standard 56-lead TSOP package.
June 1997
Order Number: 290608-001
Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to
sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or
infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life
saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
The 28F160S3 and 28F320S3 may contain design defects or errors known as errata. Current characterized errata are available
on request.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be
obtained from:
Intel Corporation
P.O. Box 7641
Mt. Prospect, IL 60056-7641
or call 1-800-879-4683
or visit Intel’s website at http:\\www.intel.com
COPYRIGHT © INTEL CORPORATION, 1997
*Third-party brands and names are the property of their respective owners.
CG-041493
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28F160S3, 28F320S3
CONTENTS
PAGE
1.0 INTRODUCTION .............................................5
1.1 New Features...............................................5
1.2 Product Overview.........................................5
1.3 Pinout and Pin Description ...........................6
2.0 PRINCIPLES OF OPERATION .....................10
2.1 Data Protection ..........................................11
3.0 BUS OPERATION .........................................12
3.1 Read ..........................................................12
3.2 Output Disable ...........................................12
3.3 Standby......................................................12
3.4 Deep Power-Down .....................................12
3.5 Read Query Operation ...............................12
3.6 Read Identifier Codes Operation ................13
3.7 Write ..........................................................13
4.0 COMMAND DEFINITIONS ............................13
4.1 Read Array Command................................16
4.2 Read Query Mode Command.....................17
4.2.1 Query Structure Output .......................17
4.2.2 Query Structure Overview ...................19
4.2.3 Block Status Register ..........................20
4.2.4 CFI Query Identification String.............21
4.2.5 System Interface Information...............22
4.2.6 Device Geometry Definition .................23
4.2.7 Intel-Specific Extended Query Table ...24
4.3 Read Identifier Codes Command ...............25
4.4 Read Status Register Command................25
4.5 Clear Status Register Command................26
4.6 Block Erase Command ..............................26
4.7 Full Chip Erase Command .........................26
4.8 Write to Buffer Command...........................27
ADVANCE INFORMATION
PAGE
4.9 Byte/Word Write Command ........................27
4.10 STS Configuration Command...................28
4.11 Block Erase Suspend Command ..............28
4.12 Program Suspend Command ...................28
4.13 Set Block Lock-Bit Commands .................29
4.14 Clear Block Lock-Bits Command ..............29
5.0 DESIGN CONSIDERATIONS ........................39
5.1 Three-Line Output Control..........................39
5.2 STS and WSM Polling ................................39
5.3 Power Supply Decoupling ..........................39
5.4 VPP Trace on Printed Circuit Boards...........39
5.5 VCC, VPP, RP# Transitions..........................39
5.6 Power-Up/Down Protection ........................39
6.0 ELECTRICAL SPECIFICATIONS..................40
6.1 Absolute Maximum Ratings ........................40
6.2 Operating Conditions..................................40
6.2.1 Capacitance.........................................41
6.2.2 AC Input/Output Test Conditions .........41
6.2.3 DC Characteristics...............................42
6.2.4 AC Characteristics - Read-Only
Operations..........................................44
6.2.5 AC Characteristics - Write Operations .46
6.2.6 Reset Operations.................................48
6.2.7 Erase, Program, And Lock-Bit
Configuration Performance.................49
APPENDIX A: Device Nomenclature and
Ordering Information ..................................51
APPENDIX B: Additional Information ...............52
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28F160S3, 28F320S3
REVISION HISTORY
Number
-001
4
Description
Original version
ADVANCE INFORMATION
E
1.0
INTRODUCTION
This datasheet contains 16- and 32-Mbit WordWide FlashFileTM memory (28F160S3 and
28F320S3) specifications. Section 1 provides a
flash memory overview. Sections 2, 3, 4, and 5
describe the memory organization and functionality.
Section 6 covers electrical specifications for
extended temperature product offerings.
1.1
New Features
28F160S3, 28F320S3
This family of products are optimized for fast factory
programming and low power designs. Specifically
designed for 3V systems, the 28F160S3 and
28F320S3 support read operations at 2.7V–3.6V
Vcc with block erase and program operations at
2.7V–3.6V and 5V VPP. High programming
performance is achieved through highly-optimized
write buffers. A 5V VPP option is available for even
faster factory programming. For a simple low power
design, VCC and VPP can be tied to 2.7V.
Additionally, the dedicated VPP pin gives complete
data protection when VPP ≤ VPPLK.
The Word-Wide FlashFile memory family maintains
basic compatibility with Intel’s 28F016SA and
28F016SV. Key enhancements include:
Internal VPP detection
configures the device
operations.
•
Common Flash Interface (CFI) Support
•
Scaleable Command Set (SCS) Support
•
Low Voltage Technology
•
Enhanced Suspend Capabilities
A Common Flash Interface (CFI) permits OEMspecified software algorithms to be used for entire
families of devices. This allows device-independent,
JEDEC ID-independent, and forward- and
backward-compatible software support for the
specified flash device families. Flash vendors can
standardize their existing interfaces for long-term
compatibility.
They share a compatible Status Register, basic
software commands, and pinout. These similarities
enable a clean migration from the 28F016SA or
28F016SV. When upgrading, it is important to note
the following differences:
•
Because of new feature and density options,
the devices have different manufacturer and
device identifier codes. This allows for software
optimization.
•
New software commands.
•
To take advantage of low voltage on the
28F160S3
and
28F320S3,
allow
VPP
connection to VCC. The 28F160S3 and
28F320S3 do not support a 12V VPP option.
1.2
Product Overview
The Word-Wide FlashFile memory family provides
density upgrades with pinout compatibility for the
16- and 32-Mbit densities. They are highperformance memories arranged as 1 Mword and
2 Mwords of 16 bits or 2 Mbyte and 4 Mbyte of
8 bits. This data is grouped in thirty-two and sixtyfour 64-Kbyte blocks that can be erased, locked
and unlocked in-system. Figure 1 shows the block
diagram, and Figure 5 illustrates the memory
organization.
ADVANCE INFORMATION
circuitry automatically
for optimized write
Scaleable Command Set (SCS) allows a single,
simple software driver in all host systems to work
with all SCS-compliant flash memory devices,
independent of system-level packaging (e.g.,
memory card, SIMM, or direct-to-board placement).
Additionally,
SCS
provides
the
highest
system/device data transfer rates and minimizes
device and system-level implementation costs.
A Command User Interface (CUI) serves as the
interface between the system processor and
internal device operation. A valid command
sequence written to the CUI initiates device
automation. An internal Write State Machine (WSM)
automatically executes the algorithms and timings
necessary for block erase, program, and lock-bit
configuration operations.
A block erase operation erases one of the device’s
64-Kbyte blocks typically within tWHQV2/EHQV2
independent of other blocks. Each block can be
independently erased 100,000 times. Block erase
suspend mode allows system software to suspend
block erase to read or write data from any other
block.
Data is programmed in byte, word or page
increments. Program suspend mode enables the
system to read data or execute code from any other
flash memory array location.
5
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28F160S3, 28F320S3
The device incorporates two Write Buffers of 32
bytes (16 words) to allow optimum-performance
data programming. This feature can improve
system program performance by up to four times
over non-buffer programming.
Individual block locking uses a combination of block
lock-bits to lock and unlock blocks. Block lock-bits
gate block erase, full chip erase, program and write
to buffer operations. Lock-bit configuration
operations (Set Block Lock-Bit and Clear Block
Lock-Bits commands) set and clear lock-bits.
The Status Register and the STS pin in RY/BY#
mode indicate whether or not the device is busy
executing an operation or ready for a new
command. Polling the Status Register, system
software retrieves WSM feedback. STS in RY/BY#
mode gives an additional indicator of WSM activity
by providing a hardware status signal. Like the
Status Register, RY/BY#-low indicates that the
WSM is performing a block erase, program, or lockbit operation. RY/BY#-high indicates that the WSM
is ready for a new command, block erase is
suspended (and program is inactive), program is
suspended, or the device is in deep power-down
mode.
The Automatic Power Savings (APS) feature
substantially reduces active current when the
device is in static mode (addresses not switching).
The BYTE# pin allows either x8 or x16 read/writes
to the device. BYTE# at logic low selects 8-bit
mode with address A0 selecting between the low
byte and high byte. BYTE# at logic high enables
16-bit operation with address A1 becoming the
lowest order address. Address A0 is not used in 16bit mode.
When one of the CEX# pins (CE0#, CE1#) and RP#
pins are at VCC, the component enters a CMOS
standby mode. Driving RP# to GND enables a deep
power-down mode which significantly reduces
power consumption, provides write protection,
resets the device, and clears the Status Register. A
reset time (tPHQV) is required from RP# switching
high until outputs are valid. Likewise, the device
has a wake time (tPHEL) from RP#-high until writes
to the CUI are recognized.
1.3
Pinout and Pin Description
The 16-Mbit device is available in the 56-lead
TSOP, 56-lead SSOP and µBGA packages. The
32- Mb device is available in the 56-lead SSOP and
µBGA packages. The pinouts are shown in Figures
2, 3 and 4.
DQ0 - DQ15
Output Buffer
Input Buffer
Identifier
Register
Status
Register
Write Buffer
I/O Logic
Data
Register
Output
Multiplexer
Query
VCC
BYTE#
CE#
WE#
OE#
RP#
WP#
Command
User
Interface
Multiplexer
Data
Comparator
16-Mbit: A0- A20
32-Mbit: A0 - A21
Y-Decoder
Y-Gating
STS
Input Buffer
Address
Latch
Write State
Machine
X-Decoder
16-Mbit: Thirty-two
32-Mbit: Sixty-four
64-Kbyte Blocks
Program/Erase
Voltage Switch
VPP
VCC
GND
Address
Counter
Figure 1. Block Diagram
6
ADVANCE INFORMATION
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28F160S3, 28F320S3
Table 1. Pin Descriptions
Sym
A0–A21
Type
Name and Function
INPUT
ADDRESS INPUTS: Address inputs for read and write operations are internally
latched during a write cycle. A 0 selects high or low byte when operating in x8 mode.
In x16 mode, A0 is not used; input buffer is off.
16-Mbit → A0–A20
DQ0–
DQ15
32-Mbit → A0–A21
INPUT/ DATA INPUTS/OUTPUTS: Inputs data and commands during CUI write cycles;
OUTPUT outputs data during memory array, Status Register, query and identifier code read
cycles. Data pins float to high-impedance when the chip is deselected or outputs
are disabled. Data is internally latched during a write cycle.
CE0#,
CE1#
INPUT
CHIP ENABLE: Activates the device’s control logic, input buffers, decoders, and
sense amplifiers. With CE 0# or CE1# high, the device is deselected and power
consumption reduces to standby levels. Both CE 0# and CE1# must be low to select
the device. Device selection occurs with the latter falling edge of CE 0# or CE1#. The
first rising edge of CE0# or CE1# disables the device.
RP#
INPUT
RESET/DEEP POWER-DOWN: When driven low, RP# inhibits write operations
which provides data protection during system power transitions, puts the device in
deep power-down mode, and resets internal automation. RP#-high enables normal
operation. Exit from deep power-down sets the device to read array mode.
OE#
INPUT
OUTPUT ENABLE: Gates the device’s outputs during a read cycle.
WE#
INPUT
WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data
are latched on the rising edge of the WE# pulse.
STS
WP#
BYTE#
STATUS: Indicates the status of the internal state machine. When configured in
OPEN
DRAIN level mode (default), it acts as a RY/BY# pin. For this and alternate configurations
OUTPUT of the STATUS pin, see the Configuration command. Tie STS to VCC with a pull-up
resistor.
INPUT
WRITE PROTECT: Master control for block locking. When V IL, locked blocks
cannot be erased or programmed, and block lock-bits cannot be set or cleared.
INPUT
BYTE ENABLE: Configures x8 mode (low) or x16 mode (high).
VPP
SUPPLY BLOCK ERASE, PROGRAM, LOCK-BIT CONFIGURATION POWER SUPPLY:
Necessary voltage to perform block erase, program, and lock-bit configuration
operations. Do not float any power pins.
VCC
SUPPLY DEVICE POWER SUPPLY: Do not float any power pins. Do not attempt block
erase, program, or block-lock configuration with invalid VCC values.
GND
SUPPLY GROUND: Do not float any ground pins.
NC
NO CONNECT: Lead is not internally connected; it may be driven or floated.
ADVANCE INFORMATION
7
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28F160S3, 28F320S3
28F016SA 28F160S3
28F160S3
28F016SA
28F016SV 28F160S5
28F160S5
28F016SV
3/5#
CE1#
NC
A20
A19
A18
A17
A16
VCC
A15
A14
A13
A12
CE0#
VPP
RP#
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
NC
CE1#
NC
A20
A19
A18
A17
A16
VCC
A15
A14
A13
A12
CE0#
VPP
RP#
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
56-LEAD TSOP
STANDARD PINOUT
14 mm x 20 mm
TOP VIEW
WP#
WP#
WE#
WE#
OE#
OE#
RY/BY#
STS
RY/BY#
DQ15
DQ15
DQ7
DQ7
DQ14
DQ14
DQ6
DQ6
GND
GND
DQ13
DQ13
DQ5
DQ5
DQ12
DQ12
DQ4
DQ4
VCC
VCC
GND
GND
DQ11
DQ11
DQ3
DQ3
DQ10
DQ10
DQ2
DQ2
VCC
VCC
DQ9
DQ9
DQ1
DQ1
DQ8
DQ8
DQ0
DQ0
A0
A0
BYTE# BYTE#
NC
NC
NC
NC
Highlights pinout changes.
Figure 2. TSOP 56-Lead Pinout
8
ADVANCE INFORMATION
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28F160S3, 28F320S3
Figure 3. SSOP 56-Lead Pinout
ADVANCE INFORMATION
9
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28F160S3, 28F320S3
GND A10 VPP CE0 A14 VCC
VCC A14 CE0 VPP A10 GND
A4
A7
A9
A11 A12 A15 A17 A19
A19 A17 A15 A12 A11
A9
A7
A4
A5
A6
A8
RP# A13 A16 A21 A20
A20 A21 A16 A13 RP#
A8
A6
A5
A2
A1
A3
A18 CE1 NC
NC
A3
A1
A2
NC
NC BYTE#
DQ7 WP# WE#
WE# WP# DQ7
BYTE# NC
NC
A0
DQ8 DQ1 DQ3 DQ12 DQ6 DQ15 OE#
OE# DQ15 DQ6 DQ12 DQ3 DQ1 DQ8
A0
CE1 A18
DQ0 DQ9 DQ2 DQ11 DQ4 DQ13 DQ14 STS
STS DQ14 DQ13 DQ4 DQ11 DQ2 DQ9 DQ0
VCC DQ10 GND VCC DQ5 GND
GND DQ5 VCC GND DQ10 VCC
This is the view of the package as surface mounted on
the board. Note that the signals are mirror imaged.
Bottom View
NOTES:
1. Figures are not drawn to scale.
2. Address A21 is not included in the 28F160S3.
3. More information on µBGA* packages is available by contacting your Intel/Distribution sales office.
Figure 4. µBGA* Package Pinout
2.0
PRINCIPLES OF OPERATION
The word-wide memories include an on-chip
Write State Machine (WSM) to manage block
erase, program, and lock-bit configuration
functions. It allows for: 100% TTL-level control
inputs, fixed power supplies during block erasure,
programming, lock-bit configuration, and minimal
processor overhead with RAM-like interface
timings.
After initial device power-up or return from deep
power-down mode (see Bus Operations), the
10
device defaults to read array mode. Manipulation
of external memory control pins allow array read,
standby, and output disable operations.
Read Array, Status Register, query, and identifier
codes can be accessed through the CUI
independent of the VPP voltage. Proper
programming voltage on VPP enables successful
block
erasure,
program,
and
lock-bit
configuration. All functions associated with
altering memory contents—block erase, program,
lock-bit configuration—are accessed via the CUI
and verified through the Status Register.
ADVANCE INFORMATION
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28F160S3, 28F320S3
Commands are written using standard microprocessor write timings. The CUI contents serve
as input to the WSM that controls the block
erase, programming, and lock-bit configuration.
The internal algorithms are regulated by the
WSM, including pulse repetition, internal
verification, and margining of data. Addresses
and data are internally latched during write
cycles. Writing the appropriate command outputs
array data, identifier codes, or Status Register
data.
Interface software that initiates and polls
progress of block erase, programming, and lockbit configuration can be stored in any block. This
code is copied to and executed from system
RAM during flash memory updates. After
successful completion, reads are again possible
via the Read Array command. Block erase
suspend allows system software to suspend a
block erase to read or write data from any other
block. Program suspend allows system software
to suspend a program to read data from any
other flash memory array location.
2.1
Data Protection
Depending on the application, the system
designer may choose to make the VPP power
supply switchable or hardwired to VPPH1/2. The
device supports either design practice, and
encourages optimization of the processormemory interface.
When VPP ≤ VPPLK, memory contents cannot be
altered. When high voltage is applied to VPP, the
two-step block erase, program, or lock-bit
configuration command sequences provide
protection from unwanted operations. All write
functions are disabled when VCC voltage is below
the write lockout voltage VLKO or when RP# is at
VIL. The device’s block locking capability
provides additional protection from inadvertent
code or data alteration.
Figure 5. Memory Map
ADVANCE INFORMATION
11
28F160S3, 28F320S3
3.0
BUS OPERATION
The local CPU reads and writes flash memory insystem. All bus cycles to or from the flash
memory conform to standard microprocessor bus
cycles.
3.1
Read
Block information, query information, identifier
codes and Status Registers can be read
independent of the VPP voltage.
The first task is to place the device into the
desired read mode by writing the appropriate
read-mode command (Read Array, Query, Read
Identifier Codes, or Read Status Register) to the
CUI. Upon initial device power-up or after exit
from deep power-down mode, the device
automatically resets to read array mode. Control
pins dictate the data flow in and out of the
component. CE0#, CE1# and OE# must be driven
active to obtain data at the outputs. CE0# and
CE1# are the device selection controls, and,
when both are active, enable the selected
memory device. OE# is the data output (DQ0–
DQ15) control: When active it drives the selected
memory data onto the I/O bus. WE# must be at
VIH and RP# must be at VIH. Figure 17 illustrates
a read cycle.
3.2
Output Disable
With OE# at a logic-high level (VIH), the device
outputs are disabled. Output pins DQ0–DQ15 are
placed in a high-impedance state.
3.3
Deep Power-Down
RP# at VIL initiates the deep power-down mode.
In read mode, RP#-low deselects the memory,
places output drivers in a high-impedance state,
and turns off all internal circuits. RP# must be
held low for time tPLPH. Time tPHQV is required
after return from power-down until initial memory
access outputs are valid. After this wake-up
interval, normal operation is restored. The CUI
resets to read array mode, and the Status
Register is set to 80H.
During block erase, programming, or lock-bit
configuration modes, RP#-low will abort the
operation. STS in RY/BY# mode remains low
until the reset operation is complete. Memory
contents being altered are no longer valid; the
data may be partially
corrupted after
programming or partially altered after an erase or
lock-bit configuration. Time tPHWL is required after
RP# goes to logic-high (VIH) before another
command can be written.
It is important in any automated system to assert
RP# during system reset. When the system
comes out of reset, it expects to read from the
flash memory. Automated flash memories
provide status information when accessed during
block
erase,
programming,
or
lock-bit
configuration modes. If a CPU reset occurs with
no flash memory reset, proper CPU initialization
may not occur because the flash memory may be
providing status information instead of array data.
Intel’s Flash memories allow proper CPU
initialization following a system reset through the
use of the RP# input. In this application, RP# is
controlled by the same RESET# signal that
resets the system CPU.
Standby
CE0# or CE1# at a logic-high level (VIH) places
the device in standby mode, substantially
reducing device power consumption. DQ0–DQ15
(or DQ0– DQ7 in x8 mode) outputs are placed in
a high-impedance state independent of OE#. If
deselected during block erase, programming, or
lock-bit configuration, the device continues
functioning and consuming active power until the
operation completes.
12
3.4
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3.5
Read Query Operation
The read query operation outputs block status,
Common Flash Interface (CFI) ID string, system
interface, device geometry, and Intel-specific
extended query information.
ADVANCE INFORMATION
E
3.6
Read Identifier Codes
Operation
The read-identifier codes operation outputs the
manufacturer code, device code, and block lock
configuration codes for each block configuration
(see Figure 6). Using the manufacturer and
device codes, the system software can
automatically match the device with its proper
algorithms. The block-lock configuration codes
identify each block’s lock-bit setting.
28F160S3, 28F320S3
3.7
Write
Writing commands to the CUI enables reading of
device data, query, identifier codes, inspection
and clearing of the Status Register. Additionally,
when VPP = VPPH1/2, block erasure, programming,
and lock-bit configuration can also be performed.
The Block Erase command requires appropriate
command data and an address within the block
to be erased. The Byte/Word Write command
requires the command and address of the
location to be written. Set Block Lock-Bit
commands require the command and address
within the block to be locked. The Clear Block
Lock-Bits command requires the command and
an address within the device.
The CUI does not occupy an addressable
memory location. It is written when WE#, CE0#,
and CE1# are active and OE# = VIH. The address
and data needed to execute a command are
latched on the rising edge of WE# or CEX#
(CE0#, CE1#), whichever goes high first.
Standard microprocessor write timings are used.
Figure 18 illustrates a write operation.
4.0
COMMAND DEFINITIONS
VPP voltage ≤ VPPLK enables read operations
from the Status Register, identifier codes, or
memory blocks. Placing VPPH1/2 on VPP enables
successful block erase, programming, and lockbit configuration operations.
Device operations are selected by writing specific
commands into the CUI. and Table 3 define
these commands.
Figure 6. Device Identifier Code Memory Map
ADVANCE INFORMATION
13
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28F160S3, 28F320S3
Table 2. Bus Operations
Mode
CE1# OE#(11) WE#(11)
Address
VPP
DQ(8)
STS(3)
VIH
X
X
DOUT
X
VIH
VIH
X
X
High Z
X
X
X
X
X
High Z
X
High Z High Z(9)
Notes
RP#
CE0#
1,2
VIH
VIL
VIL
VIL
Output Disable
VIH
VIL
VIL
Standby
VIH
VIL
VIH
Read
VIH
VIL
VIH
VIH
Reset/PowerDown Mode
10
VIL
X
X
X
X
X
X
Read Identifier
Codes
4
VIH
VIL
VIL
VIL
VIH
See
Figure 6
X
DOUT
High Z(9)
Read Query
5
VIH
VIL
VIL
VIL
VIH
See Table 6
X
DOUT
High Z(9)
3,6,7
VIH
VIL
VIL
VIH
VIL
X
VPPH1/2
DIN
X
Write
NOTES:
1. Refer to Table 19. When VPP ≤ VPPLK, memory contents can be read, but not altered.
2. X can be VIL or VIH for control and address input pins and VPPLK or VPPH1/2 for VPP. See Table 19, for VPPLK and VPPH1/2
voltages.
3. STS in level RY/BY# mode (default) is VOL when the WSM is executing internal block erase, programming, or lock-bit
configuration algorithms. It is VOH when the WSM is not busy, in block erase suspend mode (with programming inactive),
program suspend mode, or deep power-down mode.
4. See Section 4.3 for read identifier code data.
5. See Section 4.2 for read query data.
6. Command writes involving block erase, write, or lock-bit configuration are reliably executed when VPP = VPPH1/2 and
VCC = VCC1/2 (see Section 6.2).
7. Refer to Table 3 for valid DIN during a write operation.
8. DQ refers to DQ0–7 if BYTE# is low and DQ0–15 if BYTE# is high.
9. High Z will be VOH with an external pull-up resistor.
10. RP# at GND ± 0.2V ensures the lowest deep power-down current.
11. OE# = VIL and WE# = VIL concurrently is an undefined state and should not be attempted.
14
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Table 3. Word-Wide FlashFile™ Memory Command Set Definitions(13)
Command
Scaleable Bus
Notes
or Basic Cycles
Command Req'd
Set(14)
First Bus Cycle
Second Bus Cycle
Oper(1) Addr(2) Data(3,4) Oper(1) Addr(2) Data(3,4)
Read Array
SCS/BCS
1
Read Identifier Codes
SCS/BCS
≥2
5
Write
X
FFH
Write
X
90H
Read
IA
ID
SCS
≥2
Write
X
98H
Read
QA
QD
Read Status Register
SCS/BCS
2
Write
X
70H
Read
X
SRD
Clear Status Register
SCS/BCS
1
Write
X
50H
SCS
>2
8, 9, 10
Write
BA
E8H
Write
BA
N
Word/Byte Program
SCS/BCS
2
6,7
Write
X
40H
or
10H
Write
PA
PD
Block Erase
SCS/BCS
2
6,10
Write
X
20H
Write
BA
D0H
Block Erase, Word/Byte SCS/BCS
Program Suspend
1
6
Write
X
B0H
Block Erase, Word/Byte SCS/BCS
Program Resume
1
6
Write
X
D0H
STS pin Configuration
SCS
2
Write
X
B8H
Write
X
CC
Set Block Lock-Bit
SCS
2
11
Write
X
60H
Write
BA
01H
Clear Block Lock-Bits
SCS
2
12
Write
X
60H
Write
X
D0H
Full Chip Erase
SCS
2
10
Write
X
30H
Write
X
D0H
Read Query
Write to Buffer
ADVANCE INFORMATION
15
28F160S3, 28F320S3
NOTES:
1. Bus operations are defined in Table 2.
2. X = Any valid address within the device.
BA = Address within the block being erased or locked.
IA = Identifier Code Address: see Table 12.
QA = Query database Address.
PA = Address of memory location to be programmed.
3. ID = Data read from Query database.
SRD = Data read from Status Register. See Table 15 for a description of the Status Register bits.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE#.
CC = Configuration Code. (See Table 14.)
4. The upper byte of the data bus (DQ8–15) during command writes is a “Don’t Care” in x16 operation.
E
5. Following the Read Identifier Codes command, read operations access manufacturer, device, and block-lock codes. See
Section 4.3 for read identifier code data.
6. If a block is locked (i.e., the block’s lock-bit is set to 0), WP# must be at VIH in order to perform block erase, program and
suspend operations. Attempts to issue a block erase, program and suspend operation to a locked block while WP# is VIL
will fail.
7. Either 40H or 10H are recognized by the WSM as the byte/word program setup.
8. After the Write to Buffer command is issued, check the XSR to make sure a Write Buffer is available.
9. N = byte/word count argument such that the number of bytes/words to be written to the input buffer = N + 1. N = 0 is 1
byte/word length, and so on. Write to Buffer is a multi-cycle operation, where a byte/word count of N + 1 is written to the
correct memory address (WA) with the proper data (WD). The Confirm command (D0h) is expected after exactly N + 1 write
cycles; any other command at that point in the sequence aborts the buffered write. Writing a byte/word count outside the
buffer boundary causes unexpected results and should be avoided.
10. The write to buffer, block erase, or full chip erase operation does not begin until a Confirm command (D0h) is issued.
Confirm also reactivates suspended operations.
11. A block lock-bit can be set only while WP# is VIH.
12. WP# must be at VIH to clear block lock-bits. The clear block lock-bits operation simultaneously clears all block lock-bits.
13. Commands other than those shown above are reserved for future use and should not be used.
14. The Basic Command Set (BCS) is the same as the 28F008SA Command Set or Intel Standard Command Set. The
Scaleable Command Set (SCS) is also referred to as the Intel Extended Command Set.
16
ADVANCE INFORMATION
E
4.1
Read Array Command
Upon initial device power-up and after exit from
deep power-down mode, the device defaults to read
array mode. This operation is also initiated by
writing the Read Array command. The device
remains enabled for reads until another command
is written. Once the internal WSM has started block
erase, program, or lock-bit configuration, the device
will not recognize the Read Array command until
the WSM completes its operation—unless the WSM
is suspended via an Erase-Suspend or ProgramSuspend command. The Read Array command
functions independently of the VPP voltage.
4.2
Read Query Mode Command
This section defines the data structure or
“database” returned by the Common Flash Interface
(CFI) Query command. System software should
parse this structure to gain critical information such
as block size, density, x8/x16, and electrical
specifications. Once this information has been
obtained, the software will know which command
sets to use to enable flash writes, block erases, and
otherwise control the flash component. The Query
is part of an overall specification for multiple
command set and control interface descriptions
called Common Flash Interface, or CFI.
4.2.1
QUERY STRUCTURE OUTPUT
28F160S3, 28F320S3
Query data are always presented on the lowestorder data outputs (DQ0-7) only. The numerical
offset value is the address relative to the maximum
bus width supported by the device. On this device,
the Query table device starting address is a 10h
word address, since the maximum bus width is x16.
For this word-wide (x16) device, the first two bytes
of the Query structure, “Q” and ”R” in ASCII, appear
on the low byte at word addresses 10h and 11h.
This CFI-compliant device outputs 00H data on
upper bytes. Thus, the device outputs ASCII “Q” in
the low byte (DQ0-7) and 00h in the high byte
(DQ8-15).
Since the device is x8/x16 capable, the x8 data is
still presented in word-relative (16-bit) addresses.
However, the “fill data” (00h) is not the same as
driven by the upper bytes in the x16 mode. As in
x16 mode, the byte address (A0) is ignored for
Query output so that the “odd byte address” (A0
high) repeats the “even byte address” data (A0 low).
Therefore, in x8 mode using byte addressing, the
device will output the sequence “Q”, “Q”, “R”, “R”,
“Y”, “Y”, and so on, beginning at byte-relative
address 20h (which is equivalent to word offset 10h
in x16 mode).
At Query addresses containing two or more bytes
of information, the least significant data byte is
presented at the lower address, and the most
significant data byte is presented at the higher
address.
The Query “database” allows system software to
gain critical information for controlling the flash
component. This section describes the device’s
CFI-compliant interface that allows the host system
to access Query data.
ADVANCE INFORMATION
17
E
28F160S3, 28F320S3
Table 4. Summary of Query Structure Output as a Function of Device and Mode
Device Type/Mode
Word Addressing
Location
Byte Addressing
Query Data
Hex, ASCII
Location
Query Data
Hex, ASCII
x16 device/
x16 mode
10h
11h
12h
0051h “Q”
0052h “R”
0059h “Y”
20h
21h
22h
51h
00h
52h
“Q”
null
“R”
x16 device/
x8 mode
N/A(1)
N/A
20h
21h
22h
51h
51h
52h
“Q”
“Q”
“R”
NOTE:
1. The system must drive the lowest order addresses to access all the device’s array data when the device is configured in x8
mode. Therefore, word addressing where lower addresses are not toggled by the system is“Not Applicable” for x8configured devices.
Table 5. Example of Query Structure Output of a x16- and x8-Capable Device
Device
Address
Word Addressing:
Query Data
Byte
Address
Byte Addressing:
Query Data
A16–A1
D15–D0
A7–A0
D7–D0
0010h
0011h
0012h
0013h
0014h
0015h
0016h
0017h
0018h
...
18
0051h
0052h
0059h
P_IDLO
P_IDHI
PLO
PHI
A_IDLO
A_IDHI
...
“Q”
“R”
“Y”
PrVendor
ID #
PrVendor
TblAdr
AltVendor
ID #
20h
21h
22h
23h
24h
25h
26h
27h
28h
...
51h
51h
52h
52h
59h
59h
P_IDLO
P_IDLO
P_IDHI
...
“Q”
“Q”
“R”
“R”
“Y”
“Y”
PrVendor
ID #
“
ADVANCE INFORMATION
E
4.2.2
28F160S3, 28F320S3
QUERY STRUCTURE OVERVIEW
The Query command causes the flash component
to display the Common Flash Interface (CFI) Query
structure or “database.” The structure sub-sections
and address locations are summarized in Table 8.
The following sections describe the Query structure
sub-sections in detail.
Table 6. Query Structure(1)
Offset
Sub-Section Name
Description
00h
Manufacturer Code
01h
Device Code
(BA+2)h(2)
Block Status Register
Block-specific information
04-0Fh
Reserved
Reserved for vendor-specific information
10h
CFI Query Identification String
Command set ID and vendor data offset
1Bh
System Interface Information
Device timing & voltage information
27h
Device Geometry Definition
Flash device layout
P(3)
Primary Intel-Specific Extended Query
Table
Vendor-defined additional information
specific to the Primary Vendor Algorithm
NOTES:
1. Refer to Section 4.2.1 and Table 4 for the detailed definition of offset address as a function of device word width and mode.
2. BA = The beginning location of a Block Address (i.e., 08000h is the beginning location of block 1 when the block size is
32 Kword).
3. Offset 15 defines “P” which points to the Primary Intel-specific Extended Query Table.
ADVANCE INFORMATION
19
E
28F160S3, 28F320S3
4.2.3
BLOCK STATUS REGISTER
The Block Status Register indicates whether an
erase operation completed successfully or whether
a given block is locked or can be accessed for flash
program/erase operations.
Block Erase Status (BSR.1) allows system software
to determine the success of the last block erase
operation. BSR.1 can be used just after power-up to
verify that the VCC supply was not accidentally
removed during an erase operation. This bit is only
reset by issuing another erase operation to the
block. The Block Status Register is accessed from
word address 02h within each block.
Table 7. Block Status Register
Offset
(BA+2)h(1)
Length
(bytes)
01h
Description
28F320S3/
28F160S3
x16 Device/Mode
Block Status Register
BA+2:
0000h or
0001h
BSR.0 = Block Lock Status
1 = Locked
0 = Unlocked
BA+2 (bit 0): 0 or 1
BSR.1 = Block Erase Status
1 = Last erase operation did not complete
successfully
0 = Last erase operation completed successfully
BA+2 (bit 1): 0 or 1
BSR 2-7 Reserved for future use
BA+2 (bits 2-7): 0
NOTE:
1. BA = The beginning location of a Block Address (i.e., 008000h is the beginning location of block 1 in word mode.)
20
ADVANCE INFORMATION
E
4.2.4
28F160S3, 28F320S3
CFI QUERY IDENTIFICATION STRING
The Identification String provides verification that
the component supports the Common Flash
Interface specification. Additionally, it indicates
which version of the specification and which
vendor-specified command set(s) is
(are)
supported.
Table 8. CFI Identification
Offset
Length
(Bytes)
Description
28F320S3/
28F160S3
10h
03h
Query-Unique ASCII string “QRY“
10:
11:
12:
0051h
0052h
0059h
13h
02h
Primary Vendor Command Set and Control Interface ID Code
16-bit ID Code for Vendor-Specified Algorithms
13:
14:
0001h
0000h
15h
02h
Address for Primary Algorithm Extended Query Table
Offset value = P = 31h
15:
16:
0031h
0000h
17h
02h
Alternate Vendor Command Set and Control Interface ID Code
Second Vendor-Specified Algorithm Supported
Note: 0000h means none exists
17:
18:
0000h
0000h
19h
02h
Address for Secondary Algorithm Extended Query Table
Note: 0000h means none exists
19:
1A:
0000h
0000h
ADVANCE INFORMATION
21
E
28F160S3, 28F320S3
4.2.5
SYSTEM INTERFACE INFORMATION
The following device information can be useful in
optimizing system interface software.
Table 9. System Interface Information
Offset
Length
(bytes)
Description
28F320S3/
28F160S3
1Bh
01h
VCC Logic Supply Minimum Program/Erase Voltage
bits 7–4 BCD volts
bits 3–0 BCD 100 mv
1B:
0030h
1Ch
01h
VCC Logic Supply Maximum Program/Erase Voltage
bits 7–4 BCD volts
bits 3–0 BCD 100 mv
1C:
0055h
1Dh
01h
VPP [Programming] Supply Minimum Program/Erase Voltage
bits 7–4 HEX volts
bits 3–0 BCD 100 mv
1D:
0030h
1Eh
01h
VPP [Programming] Supply Maximum Program/Erase Voltage
bits 7–4 HEX volts
bits 3–0 BCD 100 mv
1E:
0055h
1Fh
01h
Typical Time-Out per Single Byte/Word Program, 2N µ-sec
1F:
0003h
20:
0006h
21:
000Ah
22:
000Fh
20h
21h
01h
01h
Typical Time-Out for Max. Buffer Write,
2N
µ-sec
Typical Time-Out per Individual Block Erase,
2N
2N
m-sec
22h
01h
Typical Time-Out for Full Chip Erase,
23h
01h
Maximum Time-Out for Byte/Word Program,
2N Times Typical
23:
TBD
24h
01h
Maximum Time-Out for Buffer Write, 2 N Times Typical
24:
TBD
25h
01h
Maximum Time-Out per Individual Block Erase,
2N Times Typical
25:
TBD
26h
01h
Maximum Time-Out for Chip Erase, 2N Times Typical
26:
TBD
22
m-sec
ADVANCE INFORMATION
E
4.2.6
28F160S3, 28F320S3
DEVICE GEOMETRY DEFINITION
This field provides critical details of the flash device
geometry.
Table 10. Device Geometry Definition
Offset
27h
28h
Length
(bytes)
01h
02h
Description
Device Size = 2N in Number of Bytes
Flash Device Interface Description
value
meaning
0002h
x8/x16 asynchronous
28F320S3/
28F160S3
27:
0015h
(16Mb)
27:
0016h
(32Mb)
28:
29:
0002h
0000h
2Ah
02h
Maximum Number of Bytes in Write Buffer = 2 N
2A:
2B:
0005h
0000h
2Ch
01h
Number of Erase Block Regions within Device:
2C:
0001h
Erase Block Region Information
y:
bits 15–0 = y, Where y+1 = Number of Erase Blocks of
Identical Size within Region
2D:
2E:
32 Blk
(16Mb)
001Fh
0000h
bits 31–16 = z, Where the Erase Block(s) within This Region
are (z) × 256 Bytes
y:
bits 7–0 = x = # of Erase Block Regions
2Dh
04h
ADVANCE INFORMATION
2D:
2E:
64 Blk
(32Mb)
003Fh
0000h
z:
2F:
30:
64-KB
0000h
0001h
23
E
28F160S3, 28F320S3
4.2.7
INTEL-SPECIFIC EXTENDED QUERY
TABLE
Certain flash features and commands are optional.
The Intel-Specific Extended Query table specifies
this and other similar types of information.
Table 11. Primary-Vendor Specific Extended Query
Offset(1)
Length
(bytes)
(P)h
03h
Primary Extended Query Table
Unique ASCII String “PRI“
31:
32:
33:
0050h
0052h
0049h
(P+3)h
01h
Major Version Number, ASCII
34:
0031h
(P+4)h
01h
Minor Version Number, ASCII
35:
0030h
(P+5)h
04h
Optional Feature & Command Support
36:
37:
38:
39:
000Fh
0000h
0000h
0000h
3A:
0001h
3B:
3C:
0003h
0000h
Description
bit 0
bit 1
bit 2
bit 3
bit 4
Chip Erase Supported
Suspend Erase Supported
Suspend Program Supported
Lock/Unlock Supported
Queued Erase Supported
Data
(1=yes, 0=no)
(1=yes, 0=no)
(1=yes, 0=no)
(1=yes, 0=no)
(1=yes, 0=no)
bits 5–31 Reserved for future use; undefined bits
are “0”
(P+9)h
01h
Supported Functions after Suspend
Read Array, Status, and Query are always supported during
suspended Erase or Program operation. This field defines
other operations supported.
bit 0 Program Supported after Erase Suspend
(1=yes, 0=no)
bits 1-7 Reserved for future use; undefined bits are “0”
(P+A)h
02h
Block Status Register Mask
Defines which bits in the Block Status Register section of
Query are implemented.
bit 0 Block Status Register Lock-Bit [BSR.0] active
(1=yes, 0=no)
bit 1 Block Erase Status Bit [BSR.1] active
(1=yes, 0=no)
bits 2-15 Reserved for future use; undefined bits
are “0”
NOTES:
1. The variable P is a pointer which is defined at offset 15h in Table 8.
24
ADVANCE INFORMATION
E
Offset
(P+C)h
28F160S3, 28F320S3
Table 11. Primary-Vendor Specific Extended Query (Continued)
Length
(bytes)
01h
Description
VCC Logic Supply Optimum Program/Erase voltage (highest
performance)
bits 7–4
bits 3–0
(P+D)h
01h
reserved
3D:
0050h
3E:
0050h
BCD value in volts
BCD value in 100 mv
VPP [Programming] Supply Optimum Program/Erase voltage
bits 7–4
bits 3–0
(P+E)h
Data
HEX value in volts
BCD value in 100 mv
Reserved for future use
4.3
Table 12. Identifier Codes
Code
Address(2)
Data
Manufacturer Code
Device Code
16 Mbit
32 Mbit
Block Lock Configuration
• Block is Unlocked
• Block is Locked
• Reserved for Future Use
Block Erase Status
• Last erase completed
successfully
• Last erase did not
complete successfully
• Reserved for Future Use
000000
000001
000001
X0002(1)
B0
D0
D4
DQ0 = 0
DQ0 = 1
DQ2-7
x0002(1)
DQ1 = 0
Read Identifier Codes
Command
The identifier code operation is initiated by writing
the Read Identifier Codes command. Following the
command write, read cycles from addresses shown
in Figure 6 retrieve the manufacturer, device, block
lock configuration, and block erase status codes
(see Table 12 for identifier code values). To
terminate the operation, write another valid
command. Like the Read Array command, the
Read Identifier Codes command functions
independently of the VPP voltage. Following the
Read Identifier Codes command, the information in
Table 12 can be read.
DQ1 = 1
4.4
DQ2-7
NOTES:
1. X selects the specific block lock configuration code.
See Figure 6 for the device identifier code memory
map.
2. A0 should be ignored in this address. The lowest order
address line is A1 in both word and byte mode.
ADVANCE INFORMATION
Read Status Register
Command
The Status Register may be read to determine
when programming, block erasure, or lock-bit
configuration is complete and whether the operation
completed successfully. It may be read at any time
by writing the Read Status Register command.
After writing this command, all subsequent read
operations output data from the Status Register
until another valid command is written. The Status
Register contents are latched on the falling edge of
OE#, CE0#, or CE1# whichever occurs last. OE# or
CEX# must toggle to VIH to update the Status
Register latch. The Read Status Register command
functions independently of the VPP voltage.
25
E
28F160S3, 28F320S3
Following a program, block erase, set block lock-bit,
or clear block lock-bits command sequence, only
SR.7 is valid until the Write State Machine
completes or suspends the operation. Device I/O
pins DQ0-6 and DQ8-15 are invalid. When the
operation completes or suspends (SR.7 = 1), all
contents of the Status Register are valid when read.
The eXtended Status Register (XSR) may be read
to determine Write Buffer availability (see Table 16).
The XSR may be read at any time by writing the
Write to Buffer command. After writing this
command, all subsequent read operations output
data from the XSR, until another valid command is
written. The contents of the XSR are latched on the
falling edge of OE# or CEX# whichever occurs last
in the read cycle. Write to buffer command must be
re-issued to update the XSR latch.
4.5
Clear Status Register
Command
Status Register bits SR.5, SR.4, SR.3, and SR.1
are set to “1”s by the WSM and can only be reset
by the Clear Status Register command. These bits
indicate various failure conditions (see Table 15).
By allowing system software to reset these bits,
several operations (such as cumulatively erasing or
locking multiple blocks or programming several
bytes/words in sequence) may be performed. The
Status Register may be polled to determine if an
error occurred during the sequence.
To clear the Status Register, the Clear Status
Register command is written. It functions
independently of the applied VPP voltage. This
command is not functional during block erase or
program suspend modes.
4.6
Block Erase Command
Block Erase is executed one block at a time and
initiated by a two-cycle command. A Block Erase
Setup command is written first, followed by a
Confirm command. This command sequence
requires appropriate sequencing and an address
within the block to be erased (erase changes all
block data to FFH). Block preconditioning, erase,
and verify are handled internally by the WSM
(invisible to the system). After the two-cycle block
erase sequence is written, the device automatically
outputs Status Register data when read (see Figure
10). The CPU can detect block erase completion by
26
analyzing STS in level RY/BY# mode or Status
Register bit SR.7. Toggle OE#, CE0#, or CE1# to
update the Status Register.
When the block erase is complete, Status Register
bit SR.5 should be checked. If a block erase error is
detected, the Status Register should be cleared
before system software attempts corrective actions.
The CUI remains in read Status Register mode until
a new command is issued.
This two-step command sequence of set-up
followed by execution ensures that block contents
are not accidentally erased. An invalid Block Erase
command sequence will result in both Status
Register bits SR.4 and SR.5 being set to “1.” Also,
reliable block erasure can only occur when
VCC = VCC1/2 and VPP = VPPH1/2. In the absence of
these voltages, block contents are protected
against erasure. If block erase is attempted while
VPP ≤ VPPLK, SR.3 and SR.5 will be set to “1.”
Successful block erase requires that the
corresponding block lock-bit be cleared, or WP# =
VIH. If block erase is attempted when the
corresponding block lock-bit is set and WP# = VIL,
the block erase will fail and SR.1 and SR.5 will be
set to “1.”
4.7
Full Chip Erase Command
The Full Chip Erase command followed by a
Confirm command erases all unlocked blocks. After
the Confirm command is written, the device erases
all unlocked blocks from block 0 to block 31 (or 63)
sequentially. Block preconditioning, erase, and
verify are handled internally by the WSM. After the
Full Chip Erase command sequence is written to
the CUI, the device automatically outputs the Status
Register data when read. The CPU can detect full
chip erase completion by polling the STS pin in
level RY/BY# mode or Status Register bit SR.7.
When the full chip erase is complete, Status
Register bit SR.5 should be checked to see if the
operation completed successfully. If an erase error
occurred, the Status Register should be cleared
before issuing the next command. The CUI remains
in read Status Register mode until a new command
is issued. If an error is detected while erasing a
block during a full chip erase operation, the WSM
skips the remaining cells in that block and proceeds
to erase the next block. Reading the block valid
status code by issuing the Read Identifier Codes
command or Query command informs the user of
which block(s) failed to erase.
ADVANCE INFORMATION
E
28F160S3, 28F320S3
This two-step command sequence of setup followed
by execution ensures that block contents are not
accidentally erased. An invalid Full Chip Erase
command sequence will result in both Status
Register bits SR.4 and SR.5 being set to 1. Also,
reliable full chip erasure can only occur when
VCC = VCC1/2 and VPP = VPPH1/2. In the absence of
these voltages, block contents are protected
against erasure. If full chip erase is attempted while
VPP ≤ VPPLK, SR.3 and SR.5 will be set to 1. When
WP# = VIL, only unlocked blocks are erased. Full
chip erase cannot be suspended.
If an error occurs while writing, the device will stop
programming, and Status Register bit SR.4 will be
set to a “1” to indicate a program failure. Any time a
media failure occurs during a program or an erase
(SR.4 or SR.5 is set), the device will not accept any
more Write to Buffer commands. Additionally, if the
user attempts to write past an erase block boundary
with a Write to Buffer command, the device will
abort programming. This will generate an “Invalid
Command/Sequence” error and Status Register bits
SR.5 and SR.4 will be set to “1.” To clear SR.4
and/or SR.5, issue a Clear Status Register
command.
4.8
Reliable buffered programming can only occur
when VCC = VCC1/2 and VPP = VPPH1/2. If
programming is attempted while VPP ≤ VPPLK,
Status Register bits SR.4 and SR.5 will be set to
“1.” Programming attempts with invalid VCC and VPP
voltages produce spurious results and should not
be attempted. Finally, successful programming
requires that the corresponding Block Lock-Bit be
cleared, or WP# = VIH. If a buffered write is
attempted when the corresponding Block Lock-Bit
is set and WP# = VIL, SR.1 and SR.4 will be set to
“1.”
Write to Buffer Command
To program the flash device via the write buffers, a
Write to Buffer command sequence is initiated. A
variable number of bytes or words, up to the buffer
size, can be written into the buffer and programmed
to the flash device. First, the Write to Buffer setup
command is issued along with the Block Address.
At this point, the eXtended Status Register
information is loaded and XSR.7 reverts to the
“buffer available” status. If XSR.7 = 0, no write
buffer is available. To retry, continue monitoring
XSR.7 by issuing the Write to Buffer setup
command with the Block Address until XSR.7 = 1.
When XSR.7 transitions to a “1,” the buffer is ready
for loading.
Now a Word/Byte count is issued at an address
within the block. On the next write, a device start
address is given along with the write buffer data.
For maximum programming performance and lower
power, align the start address at the beginning of a
Write Buffer boundary. Subsequent writes must
supply additional device addresses and data,
depending on the count. All subsequent addresses
must lie within the start address plus the count.
After the final buffer data is given, a Write Confirm
command is issued. This initiates the WSM to begin
copying the buffer data to the flash memory. If a
command other than Write Confirm is written to the
device, an “Invalid Command/Sequence” error will
be generated and Status Register bits SR.5 and
SR.4 will be set to “1.” For additional buffer writes,
issue another Write to Buffer setup command and
check XSR.7. The write buffers can be loaded while
the WSM is busy as long as XSR.7 indicates that a
buffer is available. Refer to Figure 7 for the Write to
Buffer flowchart.
ADVANCE INFORMATION
4.9
Byte/Word Program Commands
Byte/Word programming is executed by a two-cycle
command sequence. Byte/Word Program setup
(standard 40H or alternate 10H) is written, followed
by a second write that specifies the address and
data (latched on the rising edge of WE#). The WSM
then takes over, controlling the program and verify
algorithms internally. After the write sequence is
written, the device automatically outputs Status
Register data when read. The CPU can detect the
completion of the program event by analyzing STS
in level RY/BY# mode or Status Register bit SR.7.
When programming is complete, Status Register bit
SR.4 should be checked. If a programming error is
detected, the Status Register should be cleared.
The internal WSM verify only detects errors for “1”s
that do not successfully program to “0”s. The CUI
remains in read Status Register mode until it
receives another command. Refer to Figure 8 for
the Word/Byte Program flowchart.
Also, Reliable byte/word programming can only
occur when VCC = VCC1/2 and VPP = VPPH1/2. In the
absence of this high voltage, contents are protected
against programming. If a byte/word program is
27
E
28F160S3, 28F320S3
attempted while VPP ≤ VPPLK, Status Register bits
SR.4 and SR.3 will be set to “1.” Successful
byte/word
programming
requires
that
the
corresponding block lock-bit be cleared. If a
byte/word program is attempted when the
corresponding block lock-bit is set and WP# = VIL,
SR.1 and SR.4 will be set to “1.”
4.10
STS Configuration Command
The Status (STS) pin can be configured to different
states using the STS pin Configuration command.
Once the STS pin has been configured, it remains
in that configuration until another configuration
command is issued or RP# is low. Initially, the STS
pin defaults to level RY/BY# operation where STS
low indicates that the state machine is busy. STS
high indicates that the state machine is ready for a
new operation or suspended.
To reconfigure the Status (STS) pin to other modes,
the STS pin Configuration command is issued
followed by the desired configuration code. The
three alternate configurations are all pulse mode for
use as a system interrupt as described in Table 14.
For these configurations, bit 0 controls Erase
Complete interrupt pulse, and bit 1 controls Write
Complete interrupt pulse. When the device is
configured in one of the pulse modes, the STS pin
pulses low with a typical pulse width of 250 ns.
Supplying the 00h configuration code with the
Configuration command resets the STS pin to the
default RY/BY# level mode. Refer to Table 14 for
configuration coding definitions. The Configuration
command may only be given when the device is not
busy or suspended. Check SR.7 for device status.
An invalid configuration code will result in both
Status Register bits SR.4 and SR.5 being set to “1.”
4.11
Block Erase Suspend
Command
The Block Erase Suspend command allows
block-erase interruption to read or program data in
another block of memory. Once the block erase
process starts, writing the Block Erase Suspend
command requests that the WSM suspend the
block erase sequence at a predetermined point in
the algorithm. The device outputs Status Register
data when read after the Block Erase Suspend
command is written. Polling Status Register bit
28
SR.7 can determine when the block erase operation
has been suspended. When SR.7 = 1, SR.6 should
also be set to “1,” indicating that the device is in the
erase suspend mode. STS in level RY/BY# mode
will also transition to VOH. Specification tWHRH2
defines the block erase suspend latency.
At this point, a Read Array command can be written
to read data from blocks other than that which is
suspended. A Program command sequence can
also be issued during erase suspend to program
data in other blocks. Using the Program Suspend
command (see Section 4.12), a program operation
can also be suspended. During a program operation
with block erase suspended, Status Register bit
SR.7 will return to “0” and STS in RY/BY# mode will
transition to VOL. However, SR.6 will remain “1” to
indicate block erase suspend status.
The only other valid commands while block erase is
suspended are Read Status Register and Block
Erase Resume. After a Block Erase Resume
command is written to the flash memory, the WSM
will continue the block erase process. Status
register bits SR.6 and SR.7 will automatically clear
and STS in RY/BY# mode will return to VOL. After
the Erase Resume command is written, the device
automatically outputs Status Register data when
read (see Figure 11). VPP must remain at VPPH1/2
and VCC must remain at VCC1/2 (the same VPP and
VCC levels used for block erase) while block erase
is suspended. RP# must also remain at VIH (the
same RP# level used for block erase). Block erase
cannot resume until program operations initiated
during block erase suspend have completed.
4.12
Program Suspend Command
The Program Suspend command allows program
interruption to read data in other flash memory
locations. Once the programming process starts,
writing the Program Suspend command requests
that the WSM suspend the program sequence at a
predetermined point in the algorithm. The device
continues to output Status Register data when read
after the Program Suspend command is written.
Polling Status Register bits SR.7 can determine
when the programming operation has been
suspended. When SR.7 = 1, SR.2 should also be
set to “1”, indicating that the device is in the
program suspend mode. STS in level RY/BY#
mode will also transition to VOH. Specification
tWHRH1 defines the program suspend latency.
ADVANCE INFORMATION
E
At this point, a Read Array command can be written
to read data from locations other than that which is
suspended. The only other valid commands while
programming is suspended are Read Status
Register and Program Resume. After a Program
Resume command is written, the WSM will
continue the programming process. Status Register
bits SR.2 and SR.7 will automatically clear and STS
in RY/BY# mode will return to VOL. After the
Program Resume command is written, the device
automatically outputs Status Register data when
read. VPP must remain at VPPH1/2 and VCC must
remain at VCC1/2 (the same VPP and VCC levels used
for programming) while in program suspend mode.
RP# must also remain at VIH (the same RP# level
used for programming). Refer to Figure 9 for the
Program Suspend/Resume flowchart.
4.13
Set Block Lock-Bit Command
A flexible block locking and unlocking scheme is
enabled via a combination of block lock-bits. The
block lock-bits gate program and erase operations.
With WP# = VIH, individual block lock-bits can be
set using the Set Block Lock-Bit command.
Set block lock-bit is initiated using a two-cycle
command sequence. The Set Block Lock-Bit setup
along with appropriate block or device address is
written followed by the Set Block Lock-Bit Confirm
and an address within the block to be locked. The
WSM then controls the set lock-bit algorithm. After
the sequence is written, the device automatically
outputs Status Register data when read. The CPU
can detect the completion of the set lock-bit event
by analyzing STS in level RY/BY# mode or Status
Register bit SR.7.
When the set lock-bit operation is complete, Status
Register bit SR.4 should be checked. If an error is
detected, the Status Register should be cleared.
The CUI will remain in read Status Register mode
until a new command is issued.
This two-step sequence of setup followed by
execution ensures that lock-bits are not accidentally
set. An invalid Set Block Lock-Bit command will
result in Status Register bits SR.4 and SR.5 being
set to “1.” Also, reliable operations occur only when
VCC = VCC1/2 and VPP = VPPH1/2. In the absence of
these voltages, lock-bit contents are protected
against alteration.
ADVANCE INFORMATION
28F160S3, 28F320S3
A successful set block lock-bit operation requires
that WP# = VIH. If it is attempted with WP# = VIL,
the operation will fail and SR.1 and SR.4 will be set
to “1.” See Table 13 for write protection alternatives.
Refer to Figure 12 for the Set Block Lock-Bit
flowchart.
4.14
Clear Block Lock-Bits
Command
All set block lock-bits are cleared in parallel via the
Clear Block Lock-Bits command. This command is
valid only when WP# = VIH.
The clear block lock-bits operation is initiated using
a two-cycle command sequence. A Clear Block
Lock-Bits setup command is written followed by a
Confirm command. Then, the device automatically
outputs Status Register data when read (see Figure
13). The CPU can detect completion of the clear
block lock-bits event by analyzing STS in level
RY/BY# mode or Status Register bit SR.7.
This two-step sequence of set-up followed by
execution ensures that block lock-bits are not
accidentally cleared. An invalid Clear Block
Lock-Bits command sequence will result in Status
Register bits SR.4 and SR.5 being set to “1.” Also,
a reliable clear block lock-bits operation can only
occur when VCC = VCC1/2 and VPP = VPPH1/2. If a
clear block lock-bits operation is attempted while
VPP ≤ VPPLK, SR.3 and SR.5 will be set to “1.” In the
absence of these voltages, the block lock-bits
contents are protected against alteration. A
successful clear block lock-bits operation requires
that WP# = VIH.
If a clear block lock-bits operation is aborted due to
VPP or VCC transitioning out of valid range or RP# or
WP# active transition, block lock-bit values are left
in an undetermined state. A repeat of clear block
lock-bits is required to initialize block lock-bit
contents to known values.
When the operation is complete, Status Register bit
SR.5 should be checked. If a clear block lock-bit
error is detected, the Status Register should be
cleared. The CUI will remain in read Status Register
mode until another command is issued.
29
E
28F160S3, 28F320S3
Table 13. Write Protection Alternatives
Block
LockBit
WP#
Program and
0
VIL or VIH
Block Erase
1
VIL
Block is locked. Block erase and programming disabled
Operation
Full Chip Erase
Set or Clear
Effect
Block erase and programming enabled
VIH
Block Lock-Bit override. Block erase and programming enabled
0,1
VIL
All unlocked blocks are erased
X
VIH
Block Lock-Bit override. All blocks are erased
X
VIL
Set or clear block lock-bit disabled
VIH
Set or clear block lock-bit enabled
Block Lock-Bit
Table 14. Configuration Coding Definitions
Reserved
Pulse on
Write
Complete
Pulse on
Erase
Complete
bits 7–2
bit 1
bit 0
DQ7–DQ2 = Reserved
DQ7–DQ2 are reserved for future use.
DQ1/DQ0 = STS Pin Configuration Codes
default (DQ1/DQ0 = 00) RY/BY#, level mode
-----used to control HOLD to a memory controller to
prevent accessing a flash memory subsystem while
any flash device's WSM is busy.
00 = default, level mode RY/BY#
(device ready) indication
01 = pulse on Erase complete
10 = pulse on Flash Program complete
11 = pulse on Erase or Program Complete
Configuration Codes 01b, 10b, and 11b are all pulse
mode such that the STS pin pulses low then high
when the operation indicated by the given
configuration is completed.
Configuration Command Sequences for STS pin
configuration (masking bits D7–D2 to 00h) are as
follows:
Default RY/BY# level mode
ER INT (Erase Interrupt):
Pulse-on-Erase Complete
PR INT (Program Interrupt):
Pulse-on-Flash-Program Complete
ER/PR INT (Erase or Program Interrupt):
Pulse-on-Erase or Program Complete
B8h, 00h
B8h, 01h
B8h, 02h
B8h, 03h
configuration 01
ER INT, pulse mode(1)
-----used to generate a system interrupt pulse when
any flash device in an array has completed a block
erase or sequence of queued block erases. Helpful
for reformatting blocks after file system free space
reclamation or ‘cleanup’
configuration 10
PR INT, pulse mode(1)
-----used to generate a system interrupt pulse when
any flash device in an array has complete a
program operation. Provides highest performance
for servicing continuous buffer write operations.
configuration
ER/PR INT, pulse mode(1)
-----used to generate system interrupts to trigger
servicing of flash arrays when either erase or flash
program operations are completed when a common
interrupt service routine is desired.
NOTE:
1. When the device is configured in one of the pulse modes, the STS pin pulses low with a typical pulse width of 250 ns.
30
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Table 15. Status Register Definition
WSMS
ESS
ECLBS
BWSLBS
VPPS
BWSS
DPS
R
7
6
5
4
3
2
1
0
NOTES:
Check STS in RY/BY# mode or SR.7 to determine
block erase, programming, or lock-bit configuration
completion. SR.6-0 are invalid while SR.7 = “0.”
SR.7 = WRITE STATE MACHINE STATUS
1 = Ready
0 = Busy
SR.6 = ERASE SUSPEND STATUS
1 = Block erase suspended
0 = Block erase in progress/completed
SR.5 = ERASE AND CLEAR LOCK-BITS STATUS
1 = Error in block erasure or clear lock-bits
0 = Successful block erase or clear lock-bits
If both SR.5 and SR.4 are “1”s after a block erase
or lock-bit configuration attempt, an improper
command sequence was entered.
SR.4 = PROGRAM AND SET LOCK-BIT
STATUS
1 = Error in program or block lock-bit
0 = Successful program or set block lock-bit
SR.3 does not provide a continuous indication of
VPP level. The WSM interrogates and indicates the
VPP level only after a block erase, program, or lockbit configuration operation. SR.3 reports accurate
feedback only when VPP = VPPH1/2.
SR.3 = VPP STATUS
1 = VPP low detect, operation abort
0 = VPP OK
SR.2 = PROGRAM SUSPEND STATUS
1 = Program suspended
0 = Program in progress/completed
SR.1 = DEVICE PROTECT STATUS
1 = Block Lock-Bit and/or
RP# lock detected, operation abort
0 = Unlock
SR.1 does not provide a continuous indication of
block lock-bit values. The WSM interrogates the
block lock-bit, and WP# only after a block erase,
program, or lock-bit configuration operation. It
informs the system, depending on the attempted
operation, if the block lock-bit is set.
SR.0 = RESERVED FOR FUTURE
ENHANCEMENTS
SR.0 is reserved for future use and should be
masked when polling the Status Register.
Table 16. Extended Status Register Definition
WBS
R
R
R
R
R
R
R
7
6
5
4
3
2
1
0
NOTES:
XSR.7 = WRITE BUFFER STATUS
1 = Write to buffer available
0 = Write to buffer not available
After a Write to buffer command, XSR.7 indicates
that another Write to buffer command is possible.
XSR.6 = RESERVED FOR FUTURE
ENHANCEMENTS
SR.6–0 are reserved for future use and should be
masked when polling the status register
ADVANCE INFORMATION
31
E
28F160S3, 28F320S3
Command
Bus
Operation
Write
Write to
Buffer
Read
Start
Set Time-Out
Issue Write Command
E8H, Block Address
No
Read Extended
Status Register
Write Buffer
Time-Out?
0
XSR.7 =
1
Write Word or Byte
Count, Block Address
Write Buffer Data,
Start Address
X=0
Yes
X=N
No
Yes
Abort Buffer
Write
Command?
Yes
Write to Another
Block Address
Buffer Write to
Flash Aborted
Yes
No
Write Next Buffer Data,
Device Address
Comments
Data = E8h
Addr = Block Address
XSR.7=valid
Addr = X
Standby
Check XSR.7
1 = Write buffer available
0 = Write buffer not available
Write
Data = N = word/byte count
(Note 1, 2)
N = 0 corresponds to count = 1
Addr = Block Address
Write
Data = write buffer data
(Note 3, 4)
Addr = device start address
Write
Data = write buffer data
(Note 5, 6)
Addr = device address
Write
Buffer
Data = D0h
write to flash Addr = X
confirm
Read
Status Register data
CE# & OE# low updates SR
Addr = X
Standby
Check SR.7
1 = WSM ready
0 = WSM busy
1. Byte- or word-count values on DQ0-7 are loaded into
the Count register.
2. The device now outputs the Status Register when
read (XSR is no longer available).
3. Write Buffer contents will be programmed at the
device start address or destination flash address.
4. Align the start address on a Write Buffer boundary for
maximum programming performance.
5. The device aborts the Write to Buffer command if the
current address is outside of the original block
address.
6. The Status Register indicates an “improper command
sequence” if the Write to Buffer command is aborted.
Follow this with a Clear Status Register command.
Full status check can be done after all Erase and
Write sequences complete. Write FFh after the last
operation to reset the device to Read Array mode.
X=X+1
Buffer Write to Flash
Confirm D0H
Another
Buffer
Write?
Issue Read
Status Command
No
Read
Status Register
SR.7 =
No
0
Suspend
Write?
Suspend
Write Loop
Yes
1
Full Status
Check if Desired
Buffer Write to
Flash Complete
Figure 7. Write to Buffer Flowchart
32
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Figure 8. Single Byte/Word Program Flowchart
ADVANCE INFORMATION
33
E
28F160S3, 28F320S3
Figure 9. Program Suspend/Resume Flowchart
34
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Bus
Command
Comments
Operation
Write
Erase Block Data = 28h or 20h
Addr = Block Address
Start
Device
Supports
Queuing
Read
Yes
Set Time-Out
Issue Block Queue
Erase Command 28H,
Block Address
No
Read Extended Status
Register
Queued Erase Section
(Include this section for compatibility
with future SCS-compliant devices)
Erase Block
Time-Out?
0=No
Is Queue
Available?
XSR.7=
No
1=Yes
Another
Block
Erase?
Yes
Yes
XSR.7=valid
Addr = X
Standby
Check XSR.7
1 = Erase queue available
0 = No Erase queue available
Write
Erase Block Data = 28H
Addr = Block Address
Read
SR.7=valid; SR.6-0=X
With the device enabled,
OE# low updates SR
Addr = X
Standby
Check XSR.7
1 = Erase queue available
0 = No Erase queue available
Write
Erase
Data = D0H
(Note 1)
Confirm
Addr = X
Read
Status Register data
With the device enabled,
OE# low updates SR
Addr = X
Standby
Check SR.7
1 = WSM ready
0 = WSM busy
1. The Erase Confirm byte must follow Erase Setup when
the Erase Queue status (XSR.7)=0.
Yes
Full status check can be done after all Erase and Write
sequences complete. Write FFh after the last
operation to reset the device to Read Array mode.
Issue Erase Command
28H Block Address
1=No
No
Read Extended
Status Register
Is Queue
Full?
XSR.7=
Issue Single Block
Erase Command 20H,
Block Address
0=Yes
Write Confirm D0H
Block Address
Issue Read
Status Command
Write Confirm D0H
Block Address
Another
Block
Erase?
No
Read
Status Register
No
Suspend
Erase Loop
0
SR.7 =
Suspend
Erase
Yes
1
Full Status
Check if Desired
Erase Flash
Block(s) Complete
Figure 10. Block Erase Flowchart
ADVANCE INFORMATION
35
E
28F160S3, 28F320S3
Start
Bus
Operation
Write
Write B0H
Command
Erase
Suspend
Status Register Data
Addr = X
Standby
Check SR.7
1 = WSM Ready
0 = WSM Busy
0
Check SR.6
1 = Block Erase Suspended
0 = Block Erase Completed
Standby
1
SR.6 =
Write
0
Block Erase Completed
Data = B0H
Addr = X
Read
Read
Status Register
SR.7 =
Comments
Erase
Resume
Data = D0H
Addr = X
1
Read
Read Array
Data
Write
Read or
Write?
No
Write
Loop
Done?
Yes
Write D0H
Write FFH
Block Erase Resumed
Read Array Data
Figure 11. Block Erase Suspend/Resume Flowchart
36
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Start
Bus
Operation
Command
Comments
Write
Set
Block/Master
Lock-Bit Setup
Data = 60H
Addr = Block Address (Block),
Device Address (Master)
Write 01H/F1H,
Block/Device Address
Write
Set
Block or Master
Lock-Bit Confirm
Data = 01H (Block),
F1H (Master)
Addr = Block Address (Block),
Device Address (Master)
Read
Status Register
Read
Write 60H,
Block/Device Address
Status Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
0
SR.7 =
Repeat for subsequent lock-bit set operations.
Full status check can be done after each lock-bit set operation
or after a sequence of lock-bit set operations.
Write FFH after the last lock-bit set operation to place device in
read array mode.
1
Full Status
Check if Desired
Set Lock-Bit
Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read Status Register
Data (See Above)
SR.3 =
1
Command
Standby
Check SR.3
1 = Programming Voltage Error
Detect
Standby
Check SR.1
1 = Device Protect Detect
RST# = VIH
(Set Master Lock-Bit Operation)
RST# = VIH , Master Lock-Bit Is Set
(Set Block Lock-Bit Operation)
Standby
Check SR.4,5
Both 1 = Command Sequence Error
Standby
Check SR.4
1 = Set Lock-Bit Error
Voltage Range Error
0
SR.1 =
1
Device Protect Error
0
1
SR.4,5 =
Command Sequence
Error
0
1
SR.4 =
Set Lock-Bit Error
0
Comments
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command in cases where multiple lock-bits are set
before full status is checked.
If error is detected, clear the Status Register before attempting retry
or other error recovery.
Set Lock-Bit Successful
Figure 12. Set Block Lock-Bit Flowchart
ADVANCE INFORMATION
37
E
28F160S3, 28F320S3
Start
Write 60H
Bus
Operation
Command
Write
Clear Block
Lock-Bits Setup
Data = 60H
Addr = X
Write
Clear Block
Lock-Bits Confirm
Data = D0H
Addr = X
Comments
Write D0H
Read
Status Register Data
Read Status
Register
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
0
SR.7 =
Write FFH after the Clear Block Lock-Bits operation to place device
to read array mode.
1
Full Status
Check if Desired
Clear Block Lock-Bits
Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read Status Register
Data (See Above)
Command
Check SR.3
1 = Programming Voltage Error
Detect
Standby
SR.3 =
1
Voltage Range Error
0
SR.1=
1
Device Protect Error
Comments
Standby
Check SR.1
1 = Device Protect Detect
RST# = VIH , Master Lock-Bit Is Set
Standby
Check SR.4,5
Both 1 = Command Sequence Error
Standby
Check SR.5
1 = Clear Block Lock-Bits Error
0
1
SR.4,5 =
Command Sequence
Error
0
1
SR.5 =
Clear Block Lock-Bits
Error
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command.
If error is detected, clear the Status Register before attempting
retry or other error recovery.
0
Clear Block Lock-Bits
Successful
Figure 13. Clear Block Lock-Bits Flowchart
38
ADVANCE INFORMATION
E
5.0
DESIGN CONSIDERATIONS
5.1
Three-Line Output Control
Intel provides three control inputs to accommodate
multiple memory connections: CEX# (CE0#, CE1#),
OE#, and RP#. Three-line control provides for:
28F160S3, 28F320S3
Additionally, for every eight devices, a 4.7 µF
electrolytic capacitor should be placed at the array’s
power supply connection between VCC and GND.
The bulk capacitor will overcome voltage slumps
caused by PC board trace inductance.
5.4
a. Lowest possible memory power dissipation;
b. Data bus contention avoidance.
To use these control inputs efficiently, an address
decoder should enable CEx# while OE# should be
connected to all memory devices and the system’s
READ# control line. This assures that only selected
memory devices have active outputs, while deselected memory devices are in standby mode.
RP# should be connected to the system
POWERGOOD signal to prevent unintended writes
during system power transitions. POWERGOOD
should also toggle during system reset.
5.2
STS and WSM Polling
STS is an open drain output that should be
connected to VCC by a pull-up resistor to provide a
hardware form of detecting block erase, program,
and lock-bit configuration completion. In default
mode, it transitions low during execution of these
commands and returns to VOH when the WSM has
finished executing the internal algorithm. For
alternate STS pin configurations, see Section 4.10.
STS can be connected to an interrupt input of the
system CPU or controller. It is active at all times.
STS, in default mode, is also VOH when the device
is in block erase suspend (with programming
inactive) or in reset/power-down mode.
5.3
Power Supply Decoupling
Flash memory power switching characteristics
require careful device decoupling. Standby current
levels, active current levels and transient peaks
produced by falling and rising edges of CEX# and
OE# are areas of interest. Two-line control and
proper decoupling capacitor selection will suppress
transient voltage peaks. Each device should have a
0.1 µF ceramic capacitor connected between its
VCC and GND and VPP and GND. These highfrequency, low-inductance capacitors should be
placed as close as possible to package leads.
ADVANCE INFORMATION
VPP Trace on Printed Circuit
Boards
Updating target-system resident flash memories
requires that the printed circuit board designer pay
attention to VPP power supply traces. The VPP pin
supplies the memory cell current for programming
and block erasing. Use similar trace widths and
layout considerations given to the VCC power bus.
Adequate VPP supply traces and decoupling will
decrease VPP voltage spikes and overshoots.
5.5
VCC, VPP, RP# Transitions
Block erase, program, and lock-bit configuration are
not guaranteed if RP# ≠ VIH, or if VPP or VCC fall
outside of a valid voltage range (VCC1/2 and
VPPH1/2). If VPP error is detected, Status Register bit
SR.3 and SR.4 or SR.5 are set to “1.” If RP#
transitions to VIL during block erase, program, or
lock-bit configuration, STS in level RY/BY# mode
will remain low until the reset operation is complete.
Then, the operation will abort and the device will
enter deep power-down. Because the aborted
operation may leave data partially altered, the
command sequence must be repeated after normal
operation is restored.
5.6
Power-Up/Down Protection
The device offers protection against accidental
block erase, programming, or lock-bit configuration
during power transitions.
A system designer must guard against spurious
writes for VCC voltages above VLKO when VPP is
active. Since both WE# and CEX# must be low for a
command write, driving either input signal to VIH will
inhibit writes. The CUI’s two-step command
sequence architecture provides an added level of
protection against data alteration.
In-system block lock and unlock renders additional
protection during power-up by prohibiting block
erase and program operations. RP# = VIL disables
the device regardless of its control inputs states.
39
E
28F160S3, 28F320S3
6.0
6.1
ELECTRICAL SPECIFICATIONS
NOTICE: This datasheet contains information on products
in the design phase of development. Do not finalize a
design with this information. Revised information will be
published when the product is available. Verify with your
local Intel Sales office that you have the latest datasheet
before finalizing a design
Absolute Maximum Ratings
Temperature under Bias ................ –40°C to +85°C
Storage Temperature................... –65°C to +125°C
Voltage On Any Pin
(except VCC and VPP )
.................................... –0.5V to + VCC +0.5V(1)
VCC Supply Voltage ............ –0.2V to + VCC+0.5V(1)
VPP Update Voltage during
Block Erase, Flash Write, and
Lock-Bit Configuration ........... –0.2V to +7.0V(2)
Output Short Circuit Current.....................100
mA(3)
*WARNING: Stressing the device beyond the “Absolute
Maximum Ratings” may cause permanent damage. These
are stress ratings only. Operation beyond the “Operating
Conditions” is not recommended and extended exposure
beyond the “Operating Conditions” may affect device
reliability.
NOTES:
1. All specified voltages are with respect to GND. Minimum
DC voltage is –0.5V on input/output pins and –0.2V on
VCC and VPP pins. During transitions, this level may
undershoot to –2.0V for periods <20 ns. Maximum DC
voltage on input/output pins and VCC is VCC +0.5V
which, during transitions, may overshoot to VCC +2.0V
for periods <20 ns.
2. Maximum DC voltage on VPP may overshoot to +7.0V
for periods <20 ns.
3. Output shorted for no more than one second. No more
than one output shorted at a time.
4. Operating temperature is for extended product defined
by this specification.
6.2
Operating Conditions
Table 17. Temperature and VCC Operating Conditions(1)
Symbol
Parameter
Notes
Min
Max
Unit
Test Condition
Ambient Temperature
TA
Operating Temperature
-40
+85
°C
VCC1
VCC Supply Voltage (2.7V to 3.6V)
2.7
3.6
V
VCC2
VCC Supply Voltage (3.3V ± 0.3V)
3.0
3.6
V
NOTES:
1. Device operations in the VCC voltage ranges not covered in the table produce spurious results and should not be
attempted.
40
ADVANCE INFORMATION
E
6.2.1
28F160S3, 28F320S3
CAPACITANCE
Table 18. Capacitance(1), TA = +25°C, f = 1 MHz
Symbol
Parameter
Typ
Max
Unit
Condition
CIN
Input Capacitance
6
8
pF
VIN = 0.0V
COUT
Output Capacitance
8
12
pF
VOUT = 0.0V
NOTE:
1. Sampled, not 100% tested.
6.2.2
AC INPUT/OUTPUT TEST CONDITIONS
2.7
INPUT
1.35
TEST POINTS
1.35
OUTPUT
0.0
AC test inputs are driven at 2.7V for a Logic "1" and 0.0V for a Logic "0." Input timing begins, and output timing ends, at 1.35V.
Input rise and fall times (10% to 90%) <10 ns.
Figure 14. Transient Input/Output Reference Waveform for VCC = 2.7V–3.6V
3.0
INPUT
1.5
TEST POINTS
1.5
OUTPUT
0.0
AC test inputs are driven at 3.0V for a Logic "1" and 0.0V for a Logic "0." Input timing begins, and output timing ends, at 1.5V.
Input rise and fall times (10% to 90%) <10 ns.
Figure 15. Transient Input/Output Reference Waveform for VCC = 3.3V ± 0.3V
(High Speed Testing Configuration)
Test Configuration Capacitance Loading Value
Test Configuration
CL (pF)
1.3V
1N914
VCC = 3.3V ± 0.3V, 2.7V to 3.6V
50
R L = 3.3 kΩ
DEVICE
UNDER
TEST
OUT
CL
C L Includes Jig
Capacitance
Figure 16. Transient Equivalent Testing
Load Circuit
ADVANCE INFORMATION
41
E
28F160S3, 28F320S3
6.2.3
DC CHARACTERISTICS
Table 19. DC Characteristics, TA = –40oC to +85oC
Sym
Parameter
Notes
Typ
Max
Unit
Conditions
ILI
Input Load Current
1
±0.5
µA
VCC = VCC1/2 Max
VIN = VCC1/2 or GND
ILO
Output Leakage Current
1
±0.5
µA
VCC = VCC1/2 Max
Vout = VCC1/2 or GND
ICCS
VCC Standby Current
20
100
µA
CMOS Inputs
VCC = VCC1/2 Max
CEX# = RP# = VCC ± 0.2V
0.2
2
mA
TTL Inputs
VCC = VCC1/2 Max
CEX# = RP# = VIH
1
20
µA
RP# = GND ± 0.2V
IOUT (RY/BY#) = 0 mA
1,5,6
25
mA
CMOS Inputs
VCC = VCC1/2 Max
ICCD
VCC Deep Power-Down
Current
ICCR
VCC Read Current
1,3,6
CEX# = GND
f = 5 MHz, I OUT = 0 mA
30
mA
TTL Inputs
VCC = VCC1/2 Max
CEX# = VIL
f = 5 MHz, I OUT = 0 mA
ICCW
VCC Programming and Set
Lock-Bit Current
1,7
17
mA
VPP = VPPH1/2
ICCE
VCC Block Erase or Clear
Block Lock-Bits Current
1,7
17
mA
VPP = VPPH1/2
ICCWS V Program Suspend or
CC
ICCES Block Erase Suspend
Current
1,2
1
6
mA
CEX# = VIH
1
±2
± 15
µA
VPP ≤ VCC
10
200
µA
VPP ≥ VCC
0.1
5
µA
RP# = GND ± 0.2V
IPPS
VPP Standby or VPP Read
IPPR
Current
IPPD
VPP Deep Power-Down
Current
IPPW
VPP Program or Set Lock-Bit
Current
1,7
80
mA
VPP = VPPH1/2
IPPE
VPP Block Erase or Clear
Block Lock-Bits Current
1,7
40
mA
VPP = VPPH1/2
IPPWS
IPPES
VPP Program Suspend or
Block Erase Suspend
Current
1
200
µA
VPP = VPPH1/2
42
1
10
ADVANCE INFORMATION
E
Sym
28F160S3, 28F320S3
Parameter
Table 19. DC Characteristics (Continued)
Notes
Min
Max
Unit
Conditions
VIL
Input Low Voltage
7
-0.5
0.8
V
VIH
Input High Voltage
7
2.0
VCC
+0.5
V
VOL
Output Low Voltage
3,7
0.4
V
VCC = VCC1/2 Min
IOL = 5.8 mA
VOH1
Output High Voltage (TTL)
3,7
2.4
V
VCC = VCC1/2 Min
IOH = –2.5 mA
VOH2
Output High Voltage (CMOS)
3,7
0.85 ×
VCC
V
VCC = VCC1/2 Min
IOH = –2.5 mA
VCC –
0.4
V
VCC = VCC1/2 Min
IOH = –100 µA
VPPLK VPP Lockout Voltage
4,7
1.5
V
VPPH1 VPP Voltage
4
2.7
3.6
V
VPPH2 VPP Voltage
4
4.5
5.5
V
VLKO
8
2.0
VCC Lockout Voltage
V
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC voltage and TA = +25°C. These currents are
valid for all product versions (packages and speeds).
2. ICCWS and ICCES are specified with the device de-selected. If read or programmed while in erase suspend mode, the
device’s current is the sum of ICCWS or ICCES and ICCR or ICCW.
3. Includes STS in level RY/BY# mode.
4. Block erase, program, and lock-bit configurations are inhibited when VPP ≤ VPPLK, and not guaranteed in the ranges
between VPPLK (max) and VPPH1 (min), between VPPH1 (max) and VPPH2 (min), and above VPPH2 (max).
5. Automatic Power Savings (APS) reduces typical ICCR to 3 mA at 2.7V and 3.3V VCC static operation.
6. CMOS inputs are either VCC ± 0.2V or GND ± 0.2V. TTL inputs are either VIL or VIH.
7. Sampled, not 100% tested.
8. With VCC ≤ VLKO flash memory writes are inhibited.
ADVANCE INFORMATION
43
E
28F160S3, 28F320S3
6.2.4
AC CHARACTERISTICS - READ-ONLY OPERATIONS
Table 20. AC Read Characteristics (1,5), TA = –40oC to +85oC
Versions(4)
3.3V ± 0.3V VCC
(All units in ns unless otherwise noted)
2.7V - 3.6V VCC
#
Sym
Parameter
R1 tAVAV Read/Write Cycle Time
R2 tAVQV Address to Output Delay
R3 tELQV CEX# to Output Delay
-100/-110
-130/-140
-120/-130
-150/-160
Notes Min Max Min Max Min Max Min Max
16 Mbit
1
100
120
130
150
32 Mbit
1
110
130
140
160
16 Mbit
1
100
120
130
150
32 Mbit
1
110
130
140
160
16 Mbit
2
100
120
130
150
32 Mbit
2
110
130
140
160
2
45
50
50
55
600
600
600
600
R4 tGLQV OE# to Output Delay
R5 tPHQV RP# High to Output Delay
R6 tELQX CEX# to Output in Low Z
3
0
0
0
0
R7 tGLQX OE# to Output in Low Z
3
0
0
0
0
R8 tEHQZ CEX# High to Output in High Z
3
50
50
55
55
R9 tGHQZ OE# High to Output in High Z
3
20
20
25
25
R10 tOH
3
Output Hold from Address, CEX#, or
OE# Change, Whichever Occurs First
0
0
0
0
R11 tELFL CEX# Low to BYTE# High or Low
tELFH
3
5
5
5
5
R12 tFLQV BYTE# to Output Delay
tFHQV
16 Mbit
3
100
120
130
150
32 Mbit
3
110
130
140
160
3
30
30
40
40
R13 tFLQZ BYTE# to Output in High Z
NOTES:
1. See AC Input/Output Reference Waveform for maximum allowable input slew rate.
2. OE# may be delayed up to tELQV-tGLQV after the falling edge of CEX# without impact on tELQV.
3. Sampled, not 100% tested.
4. See Ordering Information for device speeds (valid operational combinations).
5. See Figures 14 through 16 for testing characteristics.
44
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Note: CEX# is the latter of CE0# and CE1# low or the first of CE0# or CE1# high.
Figure 17. AC Waveform for Read Operations
ADVANCE INFORMATION
45
E
28F160S3, 28F320S3
6.2.5
AC CHARACTERISTICS - WRITE OPERATIONS
Table 21. Write Operations(1,5,6), TA = –40°C to +85°C
Versions(5)
#
3.3V ± 0.3V,
2.7V–3.6V VCC
Valid for All
Speeds
Sym
Parameter
Notes
Min
W1
tPHWL (tPHEL)
RP# High Recovery to WE# (CEX#) Going Low
2
1
µs
W2
tELWL
CEX# Setup to WE# Going Low
10
ns
(tWLEL)
(WE# Setup to CEX# Going Low)
0
ns
tWLWH
WE# Pulse Width
50
ns
(tELEH)
(CEX# Pulse Width)
70
ns
W3
Max
Unit
W4
tDVWH (tDVEH) Data Setup to WE# (CEX# ) Going High
3
50
ns
W5
tAVWH (tAVEH)
Address Setup to WE# (CEX# ) Going High
3
50
ns
W6
tWHEH
CEX# Hold from WE# High
10
ns
(tEHWH)
(WE# Hold from CEX# High)
0
ns
W7
tWHDX (tEHDX) Data Hold from WE# (CEX# ) High
5
ns
W8
tWHAX (tEHAX)
Address Hold from WE# (CEX# ) High
5
ns
W9
tWHWL
WE# Pulse Width High
30
ns
(tEHEL)
(CEX# Pulse Width High)
25
ns
100
ns
100
ns
0
ns
W10
tSHWH (tSHEH) WP# VIH Setup to WE# (CEX# ) Going High
W11
tVPWH (tVPEH)
W12
tWHGL (tEHGL) Write Recovery before Read
W13
tWHRL (tEHRL)
WE# High to STS in RY/BY# Low
W14
tQVSL
WP# VIH Hold from Valid SRD
2,4
0
ns
W15
tQVVL
VPP Hold from Valid SRD, STS in RY/BY# High
2,4
0
ns
VPP Setup to WE# (CEX# ) Going High
2
100
ns
NOTES:
1. Read timing characteristics during block erase, program, and lock-bit configuration operations are the same as during
read-only operations. Refer to AC Characteristics for read-only operations.
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid AIN and DIN for block erase, program, or lock-bit configuration.
4. VPP should be at VPPH1/2 until determination of block erase, program, or lock-bit configuration success (SR.1/3/4/5 = 0).
5. See Ordering Information for device speeds (valid operational combinations).
6. See Figures 14 through 16 for testing characteristics.
46
ADVANCE INFORMATION
E
28F160S3, 28F320S3
NOTES:
A.
VCC power-up and standby.
B.
Write block erase or program setup.
C.
Write block erase confirm or valid address and data..
D.
Automated erase or program delay.
E.
Read Status Register data.
F.
Write Read Array command.
CEX# is the latter of CE0# and CE1# low or the first of CE0# or CE1# high.
Figure 18. AC Waveform for Write Operations
ADVANCE INFORMATION
47
E
28F160S3, 28F320S3
6.2.6
RESET OPERATIONS
Figure 19. AC Waveform for Reset Operation
Table 22. Reset AC Specifications(1)
#
Sym
Parameter
P1
tPLPH
RP# Pulse Low Time
(If RP# is tied to V CC, this specification is
not applicable)
P2
tPLRH
RP# Low to Reset during Block Erase,
Program, or Lock-Bit Configuration
P3
t3VPH
VCC at 2.7V to RP# High
VCC at 3.0V to RP# High
Notes
VCC = 2.7V
VCC = 3.3V
Min
Min
Max
100
2,3
Max
100
Unit
ns
20
20
µs
50
50
µs
NOTES:
1.
These specifications are valid for all product versions (packages and speeds).
2.
If RP# is asserted while a block erase, program, or lock-bit configuration operation is not executing, the reset will
complete within tPLPH.
3.
A reset time, tPHQV, is required from the latter of STS in RY/BY# mode or RP# going high until outputs are valid.
48
ADVANCE INFORMATION
E
6.2.7
28F160S3, 28F320S3
ERASE, PROGRAM, AND LOCK-BIT CONFIGURATION PERFORMANCE
Table 23. Erase/Write/Lock Performance(3,4)
2.7V–3.6V VCC
Version
#
W16
Sym
2.7V VPP
Parameter
Byte/word program time
(using write buffer)
Notes
Typ(1)
5
3.3V VPP
5V VPP
Max
Typ(1)
Max
Typ(1)
Max
Units
5.76
TBD
5.76
TBD
2.76
TBD
µs
W16
tWHQV1 Per byte program time
tEHQV1 (without write buffer)
2
19.89
TBD
19.89
TBD
13.2
TBD
µs
W16
tWHQV1 Per word program time
tEHQV1 (without write buffer)
2
22.17
TBD
22.17
TBD
13.2
TBD
µs
W16
Block program time
(byte mode)
2
1.63
TBD
1.63
TBD
0.87
TBD
sec
W16
Block program time
(word mode)
2
0.91
TBD
0.91
TBD
0.44
TBD
sec
W16
Block program time
(using write buffer)
2
0.37
TBD
0.37
TBD
0.16
TBD
sec
2
0.56
TBD
0.56
TBD
0.42
TBD
sec
W16
W16
tWHQV2 Block erase time
tEHQV2
Full chip erase time 16 Mbit
17.9
17.9
13.3
sec
32 Mbit
35.8
35.8
26.6
sec
tWHQV3 Set Lock-Bit time
W16 tEHQV3
2
22.17
TBD
22.17
TBD
13.3
TBD
µs
tWHQV4 Clear block lock-bits time
W16 tEHQV4
2
0.56
TBD
0.56
TBD
0.42
TBD
sec
tWHRH1 Program suspend latency
W16 tEHRH1 time to read
7.24
10.2
7.24
10.2
6.73
9.48
µs
tWHRH2 Erase suspend latency time
W16 tEHRH2 to read
15.5
21.5
15.5
21.5
12.54 17.54
µs
NOTES:
1. Typical values measured at TA = +25°C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Sampled but not 100% tested.
5. Uses whole buffer.
ADVANCE INFORMATION
49
E
28F160S3, 28F320S3
Table 24. Erase/Write/Lock Performance(3,4)
3.3V ± 0.3V VCC
Version
#
Sym
3.3V VPP
Parameter
Notes
Typ(1)
5V VPP
Max
Typ(1)
Max
Units
W16
Byte/word program time
(using write buffer)
5
5.66
TBD
2.7
TBD
µs
tWHQV1
W16 tEHQV1
Per byte program time
(without write buffer)
2
19.51
TBD
12.95
TBD
µs
tWHQV1
W16 tEHQV1
Per word program time
(without write buffer)
2
21.75
TBD
12.95
TBD
µs
W16
Block program time
(byte mode)
2
1.6
TBD
0.85
TBD
sec
W16
Block program time
(word mode)
2
0.89
TBD
0.43
TBD
sec
W16
Block program time
(using write buffer)
2
0.36
TBD
0.18
TBD
sec
Block erase time
2
0.55
TBD
0.41
TBD
sec
16 Mbit
17.6
TBD
13.1
TBD
sec
32 Mbit
35.2
TBD
26.2
TBD
sec
tWHQV2
W16 tEHQV2
W16
Full chip erase time
tWHQV3
W16 tEHQV3
Set Lock-Bit time
2
22.75
TBD
12.95
TBD
µs
tWHQV4
W16 tEHQV4
Clear block lock-bits time
2
0.55
TBD
0.41
TBD
sec
tWHRH1
W16 tEHRH1
Program suspend latency
time to read
7.1
10
6.6
9.3
µs
tWHRH2
W16 tEHRH2
Erase suspend latency time
to read
15.2
21.1
12.3
17.2
µs
NOTES:
1. Typical values measured at TA = +25°C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Sampled but not 100% tested.
5. Uses whole buffer.
50
ADVANCE INFORMATION
E
28F160S3, 28F320S3
APPENDIX A
DEVICE NOMENCLATURE AND ORDERING
INFORMATION
Product line designator for all Intel Flash products
T E 2 8 F 1 6 0 S3 - 1 0 0
Package
DT = Extended Temp.
56-Lead SSOP
TE = Extended Temp.
56-Lead TSOP
GT = Extended Temp.
56-Bump µBGA*
package
Device Density
160 = 16-Mbit
320 = 32-Mbit
Order Code by Density
16 Mb
32 Mb
Access Speed (ns)
100 ns (3.3V), 120 ns (2.7V-3.6V)
Device Type
3 = 2.7V / 3.3V VCC
2.7V/3.3V / 5V VPP
Product Family
S = FlashFile™ Memory
Valid Operational Combinations
2.7V-3.6V VCC
50 pF load
(16 Mb / 32 Mb)
3.3V ± 0.3V VCC
50 pF load
(16 Mb / 32 Mb)
56-lead TSOP S3-100
56-lead TSOP S3-110
-120 / -130
-100 / -110
56-lead TSOP S3-130
56-lead TSOP S3-140
-150 / -160
-130 / -140
56-lead SSOP S3-100
56-lead SSOP S3-110
-120 / -130
-100 / -110
56-lead SSOP S3-130
56-lead SSOP S3-140
-150 / -160
-130 / -140
56-bump µBGA S3-100
56-bump µBGA S3-110
-120 / -130
-100 / -110
56-bump µBGA S3-130
56-bump µBGA S3-140
-150 / -160
-130 / -140
ADVANCE INFORMATION
51
28F160S3, 28F320S3
APPENDIX B
ADDITIONAL INFORMATION(1,2)
E
Order Number
Document/Tool
290609
Word-Wide FlashFile MemoryTM Family 28F160S5, 28F320S5 Datasheet
292203
AP-645 28F160S3/S5 Compatibility with 28F016SA/SV
292204
AP-646 Common Flash Interface (CFI) and Command Sets
www.mcif.com
Common Flash Interface Specification
290528
28F016SV 16-Mb (1Mbit x 16, 2 Mbit x 8) FlashFile™ Memory Datasheet
290489
28F016SA 16-Mb (1Mbit x 16, 2 Mbit x 8) FlashFile™ Memory Datasheet
297372
16-Mbit Flash Product Family User’s Manual
292123
AP-374 Flash Memory Write Protection Techniques
292144
AP-393 28F016SV Compatibility with 28F016SA
292159
AP-607 Multi-Site Layout Planning with Intel’s FlashFile™ Components,
Including ROM Capability
292163
AP-610 Flash Memory In-System Code and Data Update Techniques
Contact Intel/Distribution
Sales Office
Mechanical Specification µBGA* Package Preliminary Guide
Contact Intel/Distribution
Sales Office
Surface Mount and PCB Guidelines for µBGA* Packaging
Contact Intel/Distribution
Sales Office
Multi-Site Layouts: 56-lead TSOP to 56-bump µBGA* package
56-lead SSOP to 56-bump µBGA package
Contact Intel/Distribution
Sales Office
CFI - Common Flash Interface Reference Code
NOTES:
1. Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International customers should
contact their local Intel or distribution sales office.
2. Visit Intel’s World Wide Web home page at http://www.intel.com for technical documentation and tools.
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ADVANCE INFORMATION