VS28F016SV, MS28F016SV 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFile TM MEMORY Y Y VS28F016SV Ð b 40§ C to a 125§ C Ð SE2 Grade MS28F016SV Ð b 55§ C to a 125§ C Ð QML Certified Ð SE1 Grade Y SmartVoltage Technology Ð User-Selectable 3.3V or 5V VCC Ð User-Selectable 5V or 12V VPP Y Three Voltage/Speed Options Ð 80 ns Access Time, 5.0V g 5% Ð 85 ns Access Time, 5.0V g 10% Ð 120 ns Access Time, 3.3V g 10% Y 1 Million Erase Cycles per Block Typical Y 14.3 MB/sec Burst Write Transfer Rate Y Configurable x8 or x16 Operation Y 56-Lead SSOP Plastic Package Y Backwards-Compatible with VE28F008, M28F008 and 28F016SA Command Set Y Revolutionary Architecture Ð Multiple Command Execution Ð Write During Erase Ð Command Super-Set of the Intel VE28F008, M28F008 Ð Page Buffer Write Y Multiple Power Savings Modes Y Two 256-Byte Page Buffers Y State-of-the-Art 0.6 mm ETOX TM IV Flash Technology Intel’s VS/MS28F016SV, 16-Mbit FlashFiIe TM Memory is the latest member of Intel’s high density, high performance memory family for the Industrial, Special Environment, and Military markets. Its user selectable VCC and VPP (SmartVoltage Technology), innovative capabilities, 100% compatibility with the VE28F008 and M28F008, multiple power savings modes, selective block locking, and very fast read/write performance make it the ideal choice for any applications that need a high density and a wide temperature range memory device. The VS/MS28F016SV is the ideal choice for designers who need to break free from the dependence on slow rotating media or battery backed up memory arrays. With two product grades (SE1: b 55§ C to a 125§ C, and SE2: b 40§ C to a 125§ C) available, the VS/MS28F016SV is perfect for the non-PC industries like Telecommunications, Embedded/Industrial, Automotive, Navigation, Wireless Communication, Commercial Aircraft, and all Military programs. The VS/MS28F016SV’s x8/x16 architecture allows for the optimization of the memory to processor interface. The flexible block locking options enable bundling of executable application software in a Resident Flash Array (RFA), PCMCIA Memory or ATA Cards or Memory modules. The VS/MS28F016SV is offered in a 56-lead SS0P (Shrink Small Outline Package) and is manufactured on Intel’s 0.6 mm ETOX TM IV process technology. *Other brands and names are the property of their respective owners. Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata. COPYRIGHT © INTEL CORPORATION, 1995 December 1995 Order Number: 271312-002 VS28F016SV, MS28F016SV FlashFile TM MEMORY CONTENTS PAGE 1.0 INTRODUCTION ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 3 1.1 Enhanced Features ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 3 1.2 Product Overview ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 3 2.0 DEVICE PINOUT ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 5 2.1 Lead Descriptions ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 7 3.0 MEMORY MAPS ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 10 3.1 Extended Status Registers Memory Map ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 11 4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 12 4.1 Bus Operations for Word-Wide Mode (BYTEÝ e VIH) ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 12 4.2 Bus Operations for Byte-Wide Mode (BYTEÝ e VIL) ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 12 4.3 VE28F008 or M28F008 Compatible Mode Command Bus Definitions ÀÀÀÀÀ 13 4.4 VS/MS28F016SV-Performance Enhancement Command Bus Definitions ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 14 4.5 Compatible Status Register ÀÀÀÀÀÀÀÀÀ 16 4.6 Global Status Register ÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 17 4.7 Block Status Register ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 18 4.8 Device Configuration Code ÀÀÀÀÀÀÀÀÀ 19 CONTENTS PAGE 5.0 ELECTRICAL SPECIFICATIONS ÀÀÀÀÀ 20 5.1 Absolute Maximum Ratings ÀÀÀÀÀÀÀÀÀ 20 5.2 Capacitance ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 21 5.3 Timing Nomenclature ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 22 5.4 DC Characteristics (VCC e 3.3V g 0.5V) ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 25 5.5 DC Characteristics (VCC e 5.0V g 0.5V) ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 28 5.6 AC CharacteristicsÐRead Only Operations ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 31 5.7 Power-Up and Reset Timings ÀÀÀÀÀÀÀ 35 5.8 AC Characteristics for WEÝÐControlled Command Write Operations ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 36 5.9 AC Characteristics for CEÝÐControlled Command Write Operations ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 39 5.10 AC Characteristics for WEÝÐControlled Page Buffer Write Operations ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 42 5.11 AC Characteristics for CEÝÐControlled Page Buffer Write Operations ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 44 5.12 Erase and Word/Byte Write Performance ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 45 6.0 MECHANICAL SPECIFICATIONS ÀÀÀÀ 47 DEVICE NOMENCLATURE ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ 48 ADDITIONAL INFORMATION ÀÀÀÀÀÀÀÀÀÀÀÀ 48 DATA SHEET REVISION HISTORY ÀÀÀÀÀÀ 48 2 VS28F016SV, MS28F016SV FlashFile TM Memory 1.0 INTRODUCTION The documentation of the Intel VS/MS28F016SV memory device includes this data sheet, a detailed user’s manual, and a number of application notes, all of which are referenced at the end of this data sheet. The implementation of a new architecture, with many enhanced features, will improve the device operating characteristics and result in greater product reliability and ease of use. The data sheet is intended to give an overview of the chip feature-set and of the operating AC/DC specifications. The 28F016SA (compatible with VS/MS28F016SV) User’s Manual provides complete descriptions of the user modes, system interface examples and detailed descriptions of all principles of operation. It also contains the full list of software algorithm flowcharts, and a brief section on compatibility with the Intel VE28F008 and M28F008. The VS/MS28F016SV incorporates SmartVoltage technology, providing VCC operation at both 3.3V and 5.0V and program and erase capability at VPP e 12.0V or 5.0V. Operating at VCC e 3.3V, the VS/MS28F016SV consumes approximately one-half the power consumption at 5.0V VCC, while 5.0V VCC provides highest read performance capability. VPP e 5.0V operation eliminates the need for a separate 12.0V converter, while VPP e 12.0V maximizes write/erase performance. In addition to the flexible program and erase voltages, the dedicated VPP gives complete code protection with VPP s VPPLK. 1.1 Enhanced Features Depending on system design specifications, the VS/MS28F016SV is capable of supporting The VS/MS28F016SV is backwards compatible with the VE28F008 and M28F008 and offers the following enhancements: # SmartVoltage Technology Ð Selectable 5.0V or 12.0V VPP # VPP Level Bit in Block Status Register # Additional RY/BYÝ Configuration Ð Pulse-On-Write/Erase # Additional Upload Device Information Command Feedback Ð Device Revision Number Ð Device Proliferation Code Ð Device Configuration Code # # # # x8/x16 Architecture Block Locking 2 Page Buffers Instruction Queuing 1.2 Product Overview The VS/MS28F016SV is a high-performance, 16-Mbit (16,777,216-bit) block erasable, non-volatile random access memory, organized as either 1 Mword x 16 or 2 Mbyte x 8. The VS/MS28F016SV includes thirty-two 64-KB (65,536 byte) blocks or thirty-two 32-KW (32,768 word) blocks. A chip memory map is shown in Figure 3. Ð 80 ns access times with a VCC of 5.0V g 5% and loading of 30 pF Ð 85 ns access times with a VCC of 5.0V g 10% and loading of 100 pF Ð 120 ns access times with a VCC of 3.3V g 5% and loading of 50 pF A 3/5Ý input pin configures the device’s internal circuitry for optimal 3.3V or 5.0V Read/Write operation. A Command User Interface (CUI) serves as the system interface between the microprocessor or microcontroller and the internal memory operation. Internal Algorithm Automation allows Byte/Word Writes and Block Erase operations to be executed using a Two-Write command sequence to the CUI in the same way as the VE28F008 or M28F008 8-Mbit FlashFile memory. A super-set of commands has been added to the basic VE28F008 or M28F008 command-set to achieve higher write performance and provide additional capabilities. These new commands and features include: # # # # # # Page Buffer Writes to Flash Command Queuing Capability Automatic Data Writes during Erase Software Locking of Memory Blocks Two-Byte Successive Writes in 8-bit Systems Erase All Unlocked Blocks 3 VS28F016SV, MS28F016SV FlashFile TM Memory Writing of memory data is performed in either byte or word increments typically within 6 msec (12.0V VPP) b a 33% improvement over the VE28F008 or M28F008. A Block Erase operation erases one of the 32 blocks in about 1.0 sec (12.0V VPP), independent of the other blocks, which is about a 65% improvement over the VE28F008 or M28F008. # A Global Status Register (GSR) which informs Each block can be written and erased a minimum of 100,000 cycles. Systems can achieve one million Block Erase Cycles by providing wear-leveling algorithms and graceful block retirement. These techniques have already been employed in many flash file systems and hard disk drive designs. The GSR and BSR memory maps for Byte-Wide and Word-Wide modes are shown in Figures 4 and 5. The VS/MS28F016SV incorporates two Page Buffers of 256 bytes (128 words) each to allow page data writes. This feature can improve a system write performance by up to 4.8 times over previous flash memory devices, which have no Page Buffers. All operations are started by a sequence of Write commands to the device. Three Status Registers (described in detail later in this data sheet) and a RY/BYÝ output pin provide information on the progress of the requested operation. While the VE28F008 or M28F008 requires an operation to complete before the next operation can be requested, the VS/MS28F016SV allows queuing of the next operation while the memory executes the current operation. This eliminates system overhead when writing several bytes in a row to the array or erasing several blocks at the same time. The VS/MS28F016SV can also perform Write operations to one block of memory while performing Erase of another block. the system of command Queue status, Page Buffer status, and overall Write State Machine (WSM) status. # 32 Block Status Registers (BSRs) which provide block-specific status information such as the block lock-bit status. The VS/MS28F016SV incorporates an open drain RY/BYÝ output pin. This feature allows the user to OR-tie many RY/BYÝ pins together in a multiple memory configuration such as a Resident Flash Array. Other configurations of the RY/BYÝ pin are enabled via special CUI commands and are described in detail in the 16-Mbit Flash Product Family User’s Manual. The VS/MS28F016SV’s Upload Device Information command is enhanced compared to the VE28F008 or M28F008, providing access to additional device information. This command uploads the Device Revision Number, Device Proliferation Code and Device Configuration Code. The Device Proliferation Code for the VS/MS28F016SV is 01H, and the Device Configuration Code identifies the current RY/BYÝ configuration. Section 4.4 documents the exact page buffer address locations for all uploaded information. A subsequent Page Buffer Swap and Page Buffer Read command sequence is necessary to read the correct device information. # A Compatible Status Register (CSR) which is The VS/MS28F016SV also incorporates a dual chipenable function with two input pins, CE0Ý and CE1Ý. These pins have exactly the same functionality as the regular chip-enable pin, CEÝ, on the VE28F008 or M28F008. For minimum chip designs, CE1Ý may be tied to ground and system logic may use CE0Ý as the chip enable input. The VS/MS28F016SV uses the logical combination of these two signals to enable or disable the entire chip. Both CE0Ý and CE1Ý must be active low to enable the device. If either one becomes inactive, the chip will be disabled. This feature, along with the open drain RY/BYÝ pin, allows the system designer to reduce the number of control pins used in a large array of 16-Mbit devices. 100% compatible with the VE28F008 or M28F008 FlashFile memory Status Register. The CSR, when used alone, provides a straightforward upgrade capability to the VS/MS28F016SV from a VE28F008- or M28F008-based design. The BYTEÝ pin allows either x8 or x16 read/writes to the VS/MS28F016SV. BYTEÝ at logic low selects 8-bit mode with address A0 selecting between low byte and high byte. On the other hand, BYTEÝ The VS/MS28F016SV provides selectable block locking to protect code or data such as Device Drivers, PCMCIA card information, ROM-Executable O/S or Application Code. Each block has an associated non-volatile lock-bit which determines the lock status of the block. In addition, the VS/MS28F016SV has a master Write Protect pin (WPÝ) which prevents any modifications to memory blocks whose lock-bits are set. The VS/MS28F016SV contains three types of Status Registers to accomplish various functions: 4 VS28F016SV, MS28F016SV FlashFile TM Memory at logic high enables 16-bit operation with address A1 becoming the lowest order address and address A0 is not used (don’t care). A device block diagram is shown in Figure 1. The VS/MS28F016SV is specified for a maximum access time of 80 ns (tACC) at 5.0V operation (4.75V to 5.25V) in either the SE1 or SE2 grades. A corresponding maximum access time of 120 ns at 3.3V (3.15V to 3.45V) is achieved for reduced power consumption applications. The VS/MS28F016SV incorporates an Automatic Power Saving (APS) feature which substantially reduces the active current when the device is in static mode of operation (addresses not switching). In APS mode, the typical ICC current is 1 mA at 5.0V (0.8 mA at 3.3V). A deep power-down mode of operation is invoked when the RPÝ (called PWDÝ on the VE28F008 or M28F008) pin transitions low. This mode brings the device power consumption to less than 30.0 mA, typically, and provides additional write protection by acting as a device reset pin during power transitions. A reset time of 500 ns (5.0V VCC operation) is required from RPÝ switching high until outputs are again valid. In the Deep Power-Down state, the WSM is reset (any current operation will abort) and the CSR, GSR and BSR registers are cleared. A CMOS standby mode of operation is enabled when either CE0Ý or CE1Ý transitions high and RPÝ stays high with all input control pins at CMOS levels. In this mode, the device typically draws an ICC standby current of 70 mA at 5V VCC. 2.0 DEVICE PINOUT The VS/MS28F016SV 56L-SSOP pinout configuration is shown in Figure 2. 5 VS28F016SV, MS28F016SV FlashFile TM Memory 271312 – 21 Figure 1. Block Diagram 6 VS28F016SV, MS28F016SV FlashFile TM Memory 2.1 Lead Descriptions Symbol Type Name and Function A0 INPUT BYTE-SELECT ADDRESS: Selects between high and low byte when device is in x8 mode. This address is latched in x8 Data Writes. Not used in x16 mode (i.e., the A0 input buffer is turned off when BYTEÝ is high). A1 - A15 INPUT WORD-SELECT ADDRESSES: Select a word within one 64-Kbyte block. A6-15 selects 1 of 1024 rows, and A1-5 selects 16 of 512 columns. These addresses are latched during Data Writes. A16 - A20 INPUT BLOCK-SELECT ADDRESSES: Select 1 of 32 Erase blocks. These addresses are latched during Data Writes, Erase and Lock-Block operations. DQ0 - DQ7 INPUT/OUTPUT LOW-BYTE DATA BUS: Inputs data and commands during CUI write cycles. Outputs array, buffer, identifier or status data in the appropriate read mode. Floated when the chip is de-selected or the outputs are disabled. DQ8 - DQ15 INPUT/OUTPUT HIGH-BYTE DATA BUS: Inputs data during x16 Data-Write operations. Outputs array, buffer or identifier data in the appropriate read mode; not used for Status Register reads. Floated when the chip is de-selected or the outputs are disabled. CE0Ý, CE1Ý INPUT CHIP ENABLE INPUTS: Activate the device’s control logic, input buffers, decoders and sense amplifiers. With either CE0Ý or CE1Ý high, the device is de-selected and power consumption reduces to standby levels upon completion of any current Data-Write or Erase operations. Both CE0Ý, CE1Ý must be low to select the device. All timing specifications are the same for both signals. Device Selection occurs with the latter falling edge of CE0Ý or CE1Ý. The first rising edge of CE0Ý or CE1Ý disables the device. RPÝ INPUT RESET/POWER-DOWN: RPÝ low places the device in a Deep Power-Down state. All circuits that consume static power, even those circuits enabled in standby mode, are turned off. When returning from Deep Power-Down, a recovery time of tPHQV at 5.0V VCC is required to allow these circuits to power-up. When RPÝ goes low, any current or pending WSM operation(s) are terminated, and the device is reset. All Status Registers return to ready (with all status flags cleared). Exit from Deep Power-Down places the device in read array mode. OEÝ INPUT OUTPUT ENABLE: Gates device data through the output buffers when low. The outputs float to tri-state off when OEÝ is high. NOTE: CExÝ overrides OEÝ, and OEÝ overrides WEÝ. WEÝ INPUT WRITE ENABLE: Controls access to the CUI, Page Buffers, Data Queue Registers and Address Queue Latches. WEÝ is active low, and latches both address and data (command or array) on its rising edge. Page Buffer addresses are latched on the falling edge of WEÝ. 7 VS28F016SV, MS28F016SV FlashFile TM Memory 2.1 Lead Descriptions (Continued) Symbol Type Name and Function RY/BYÝ OPEN DRAIN OUTPUT READY/BUSY: Indicates status of the internal WSM. When low, it indicates that the WSM is busy performing an operation. RY/BYÝ floating indicates that the WSM is ready for new operations (or WSM has completed all pending operations), or erase is suspended, or the device is in deep powerdown mode. This output is always active (i.e., not floated to tri-state off when OEÝ or CE0Ý, CE1Ý are high), except if a RY/BYÝ Pin Disable command is issued. WPÝ INPUT WRITE PROTECT: Erase blocks can be locked by writing a nonvolatile lockbit for each block. When WPÝ is low, those locked blocks as reflected by the Block-Lock Status bits (BSR.6), are protected from inadvertent data writes or erases. When WPÝ is high, all blocks can be written or erased regardless of the state ot the lock-bits. The WPÝ input buffer is disabled when RPÝ transitions low (deep power-down mode). BYTEÝ INPUT BYTE ENABLE: BYTEÝ low places device in x8 mode. All data is then input or output on DQ0–7, and DQ8–15 float. Address A0 selects between the high and low byte. BYTEÝ high places the device in x16 mode, and turns off the A0 input buffer. Address A1, then becomes the lowest order address. 3/5Ý INPUT 3.3/5.0 VOLT SELECT: 3/5Ý high configures internal circuits for 3.3V operation. 3/5Ý low configures internal circuits for 5.0V operation. NOTE: Reading the array with 3/5Ý high in a 5.0V system could damage the device. Reference the power-up and reset timings (Section 5.7) for 3/5Ý switching delay to valid data. VPP SUPPLY WRITE/ERASE POWER SUPPLY (12.0V g 0.6V, 5.0V g 0.5V): For erasing memory array blocks or writing words/bytes/pages into the flash array. VPP e 5.0V g 0.5V eliminates the need for a 12V converter, while connection to 1 2.0V g 0.6V maximizes Write/Erase Performance. NOTE: Successful completion of write and erase attempts is inhibited with VPP at or below 1.5V. Write and erase attempts with VPP between 1.5V and 4.5V, between 5.5V and 11.4V, and above 12.6V produce spurious results and should not be attempted. VCC SUPPLY DEVICE POWER SUPPLY (3.3V g 0.45V, 5.0V g 0.5V, 5.0 g 0.25V): To switch 3.3V to 5.0V (or vice versa), first ramp VCC down to GND, and then power to the new VCC voltage. Do not leave any power pins floating. GND SUPPLY GROUND FOR ALL INTERNAL CIRCUITRY: Do not leave any ground pins floating. NC 8 NO CONNECT: Lead may be driven or left floating. VS28F016SV, MS28F016SV FlashFile TM Memory 271312 – 2 24mm x 13.5mm 0.8mm Lead Pitch Top View NOTE: 56-Lead SSOP Mechanical Diagrams and dimensions are shown at the end of this data sheet. Figure 2. SSOP Pinout Configuration 9 VS28F016SV, MS28F016SV FlashFile TM Memory 3.0 MEMORY MAPS 271312 – 3 Figure 3. VS/MS28F016SV Memory Maps (Byte-Wide and Word-Wide Modes) 10 VS28F016SV, MS28F016SV FlashFile TM Memory 3.1 Extended Status Registers Memory Map 271312 – 4 Figure 4. Extended Status Register Memory Map (Byte-Wide Mode) 271312 – 5 Figure 5. Extended Status Register Memory Map (Word-Wide Mode) 11 VS28F016SV, MS28F016SV FlashFile TM Memory 4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS 4.1 Bus Operations for Word-Wide Mode (BYTEÝ e VIH) Notes RPÝ CE1Ý CE0Ý OEÝ WEÝ A1 DQ0-15 RY/BYÝ Read Mode 1,2,7 VIH VIL VIL VIL VIH X DOUT X Output Disable 1,6,7 VIH VIL VIL VIH VIH X High Z X Standby 1,6,7 VIH VIL VIH VIH VIH VIL VIH X X X High Z X Deep Power-Down Manufacturer ID Device ID Write 1,3 VIL X X X X X High Z VOH 4 VIH VIL VIL VIL VIH VIL 0089H VOH 4 VIH VIL VIL VIL VIH VIH 66A0H VOH 1,5,6 VIH VIL VIL VIH VIL X DIN X 4.2 Bus Operations for Byte-Wide Mode (BYTEÝ e VIL) Mode Read Notes RPÝ CE1Ý CE0Ý OEÝ WEÝ A0 DQ0-7 RY/BYÝ 1,2,7 VIH VIL VIL VIL VIH X DOUT X Output Disable 1,6,7 VIH VIL VIL VIH VIH X High Z X Standby 1,6,7 VIH VIL VIH VIH VIH VIL VIH X X X High Z X Deep Power-Down Manufacturer ID Device ID Write 1,3 VIL X X X X X High Z VOH 4 VIH VIL VIL VIL VIH VIL 89H VOH 4 VIH VIL VIL VIL VIH VIH A0H VOH 1,5,6 VIH VIL VIL VIH VIL X DIN X NOTES: 1. X can be VIH or VIL for address or control pins except for RY/BYÝ, which is either VOL or VOH. 2. RY/BYÝ output is open drain. When the WSM is ready, Erase is suspended or the device is in deep power-down mode. RY/BYÝ will be at VOH if it is tied to VCC through a resistor. RY/BYÝ at VOH is independent of OEÝ while a WSM operation is in progress. 3. RPÝ at GND g 0.2V ensures the lowest deep power-down current. 4. A0 and A1 at VIL provide device manufacturer codes in x8 and x16 modes respectively. A0 and A1 at VIH provide device ID codes in x8 and x16 modes respectively. All other addresses are set to zero. 5. Commands for Erase, Data Write, or Lock-Block operations can only be completed successfully when VPP e VPPH1or VPP e VPPH2. 6. While the WSM is running, RY/BYÝ in level-mode (default) stays at VOL until all operations are complete. RY/BYÝ goes to VOH when the WSM is not busy or in erase suspend mode. 7. RY/BYÝ may be at VOL while the WSM is busy performing various operations. For example, a Status Register read during a Write operation. 12 VS28F016SV, MS28F016SV FlashFile TM Memory 4.3 VE28F008 and M28F008 Compatible Mode Command Bus Definitions Command Notes Read Array First Bus Cycle Oper Addr Data(4) Write X xxFFH Second Bus Cycle Oper Addr Data(4) Read AA AD Intelligent Identiier 1 Write X xx90H Read IA ID Read Compatible Status Register 2 Write X xx70H Read X CSRD Clear Status Register 3 WD Write X xx50H Word/Byte Write Write X xx40H Write WA Alternate Word/Byte Write Write X xx10H Write WA WD Block Erase/Confirm Write X xx20H Write BA xxD0H Erase Suspend/Resume Write X xxB0H Write X xxD0H ADDRESS AA e Array Address BA e Block Address IA e ldentitier Address WA e Write Address X e Don’t Care DATA AD e Array Data CSRD e CSR Data ID e Identifier Data WD e Write Data NOTES: 1. Following the Intelligent Identifier command, two Read operations access the manutacturer and device signature codes. 2. The CSR is automatically available after device enters data write, erase, or suspend operations. 3. Clears CSR.3, CSR.4 and CSR.5. Also clears GSR.5 and all BSR.5, BSR.4 and BSR.2 bits. See Status Register definitions. 4. The upper byte of the data bus (DQ8 – 15) during command writes is a ‘‘Don’t Care’’ in x16 operation of the device. 13 VS28F016SV, MS28F016SV FlashFile TM Memory 4.4 VS/MS28F016SVÐPerformance Enhancement Command Bus Definitions Command Mode Notes First Bus Cycle Second Bus Cycle Oper Addr Data(13) Oper Addr Data(13) Read RA GSRD BSRD Read Extended Status Register 1 Write X xx71H Page Buffer Swap 7 Write X xx72H Read Page Buffer Write X xx75H Read PA PD Single Load to Page Buffer Write X xx74H Write PA PD Sequential Load to Page Buffer Page Buffer Write to Flash Two-Byte Write Addr Data x8 4,6,10 Write X xxE0H Write X BCL Write X BCH x16 4,5,6,10 Write X xxE0H Write X WCL Write X WCH BC(H,L) x8 3,4,9,10 Write X xx0CH Write A0 BC(L,H) Write WA x16 4,5,10 Write X xx0CH Write X WCL Write WA WCH x8 3 Write X xxFBH Write A0 WD(L,H) Write WA WD(H,L) Write X xx77H Write BA xxD0H Lock Block/ Confirm Upload Status Bits/Confirm 2 Write X xx97H Write X xxD0H Upload Device Information/ Confirm 11 Write X xx99H Write X xxD0H Write X xxA7H Write X xxD0H Erase All Unlocked Blocks/Confirm RY/BYÝ Enable to Level-Mode 8 Write X xx96H Write X xx01H RY/BYÝ PulseOn-Write 8 Write X xx96H Write X xx02H RY/BYÝ PulseOn-Erase 8 Write X xx96H Write X xx03H RY/BYÝ Disable 8 Write X xx96H Write X xx04H RY/BYÝ PulseOn-Write/Erase 8 Write X xx96H Write X xx05H Sleep 12 Write X xxF0H Write X xx80H Abort ADDRESS BA e Block Address PA e Page Butter Address RA e Extended Register Address WA e Write Address X e Don’t Care 14 Third Bus Cycle Oper DATA AD e Array Data PD e Page Buffer Data BSRD e BSR Data GSRD e GSR Data WC (L,H) e Word Count (Low, High) BC (L,H) e Byte Count (Low, High) WD (L,H) e Write Data (Low, High) VS28F016SV, MS28F016SV FlashFile TM Memory NOTES: 1. RA can be the GSR address or any BSR address. See Figures 4 and 5 for Extended Status Register memory maps. 2. Upon device power-up, all BSR lock-bits come up locked. The Upload Status Bits command must be written to reflect the actual lock-bit status. 3. A0 is automatically complemented to load second byte of data. BYTEÝ must be at VIL. A0 value determines which WD/BC is supplied first: A0 e 0 looks at the WDL/BCL, A0 e 1 looks at the WDH/BCH. 4. BCH/WCH must be at 00H for this product because of the 256-byte (128-word) Page Buffer size, and to avoid writing the Page Buffer contents to more than one 256-byte segment within an array block. They are simply shown for future Page Buffer expandability. 5. In x16 mode, only the lower byte DQ0-7 is used for WCL and WCH. The upper byte DQ8-15 is a don’t care. 6. PA and PD (whose count is given in cycles 2 and 3) are supplied starting in the fourth cycle, which is not shown. 7. This command allows the user to swap between available Page Buffers (0 or 1). 8. These commands reconfigure RY/BYÝ output to one of two pulse-modes or enable and disable the RY/BYÝ function. 9. Write address, WA, is the Destination address in the flash array which must match the Source address in the Page Buffer. Refer to the 16-Mbit Flash Product Family User’s Manual. 10. BCL e 00H corresponds to a byte count of 1. Similarly, WCL e 00H corresponds to a word count of 1. 11. After writing the Upload Device Information command and the Confirm command, the following information is output at Page Buffer addresses specified below: Address Information 06H, 07H (Byte Mode) Device Revision Number 03H (Word Mode) Device Revision Number 1EH (Byte Mode) Device Configuration Code Device Configuration Code 0FH (DQ0 – 7) (Word Mode) 1FH (Byte Mode) Device Proliferation Code (01H) Device Proliferation Code (01H) 0FH (DQ8 – 15) (Word Mode) A page buffer swap followed by a page buffer read sequence is necessary to access this information. The contents of all other Page Buffer locations, after the Upload Device Information command is written, are reserved for future implementation by Intel Corporation. See Section 4.8 for a description of the Device Configuration Code. This code also corresponds to data written to the 28F016SV after writing the RY/BYÝ Reconfiguration command. 12. To ensure that the 28F0165V’s power consumption during Sleep Mode reaches the deep power-down current level, the system also needs to de-select the chip by taking either or both CE0Ý or CE1Ý high. 13. The upper byte of the data bus (DQ8 – 15) during command wntes is a Don’t Care in x16 operation of the device. 15 VS28F016SV, MS28F016SV FlashFile TM Memory 4.5 Compatible Status Register WSMS ESS ES DWS VPPS R R R 7 6 5 4 3 2 1 0 CSR.7 e WRITE STATE MACHINE STATUS 1 e Ready 0 e Busy CSR.6 1 0 CSR.5 1 0 CSR.4 1 0 CSR.3 1 0 e e e e e e e e e e e e ERASE-SUSPEND STATUS Erase Suspended Erase In Progress/Completed ERASE STATUS Error In Block Erasure Successful Block Erase DATA-WRITE STATUS Error in Data Write Data Write Successful VPP STATUS VPP Error Detect, Operation Abort VPP OK NOTES: RY/BYÝ output or WSMS bit must be checked to determine completion of an operation (Erase, Erase Suspend, or Data Write) before the appropriate Status bit (ESS, ES or DWS) is checked for success. If DWS and ES are set to ‘‘1’’ during an erase attempt, an improper command sequence was entered. Clear the CSR and attempt the operation again. The VPPS bit, unlike an A/D converter, does not provide continuous indication of VPP level. The WSM interrogates VPP’s level only after the Data-Write or Erase command sequences have been entered, and informs the system if VPP has not been switched on. VPPS is not guaranteed to report accurate feedback between VPPLK(max) and VPPH1(min) and between VPPH1(max) and VPPH2(min) and above VPPH2(max). CSR.2-0 e RESERVED FOR FUTURE ENHANCEMENTS These bits are reserved for future use; mask them out when polling the CSR. 16 VS28F016SV, MS28F016SV FlashFile TM Memory 4.6 Global Status Register WSMS OSS DOS DSS QS PBAS PBS PBSS 7 6 5 4 3 2 1 0 GSR.7 e WRITE STATE MACHINE STATUS 1 e Ready 0 e Busy GSR.6 e OPERATION SUSPEND STATUS 1 e Operation Suspended 0 e Operation in Progress/Completed GSR.5 e DEVICE OPERATION STATUS 1 e Operation Unsuccessful 0 e Operation Successful or Currently Running GSR.4 e DEVICE SLEEP STATUS 1 e Device in Sleep 0 e Device Not in Sleep MATRIX 5/4 0 0 e Operation Successful or Currently Running 0 1 e Device in Sleep mode or Pending Sleep 1 0 e Operation Unsuccessful 1 1 e Operation Unsuccessful or Aborted GSR.3 1 0 GSR.2 1 0 GSR.1 1 0 e e e e e e e e e QUEUE STATUS Queue Full Queue Available PAGE BUFFER AVAILABLE STATUS One or Two Page Buffers Available No Page Buffer Available PAGE BUFFER STATUS Selected Page Buffer Ready Selected Page Buffer Busy NOTES: [1] RY/BYÝ output or WSMS bit must be checked to determine completion of an operation (Block Lock, Suspend, any RY/BYÝ reconfiguration, Upload Status Bits, Erase or Data Write) before the appropriate Status bit (OSS or DOS) is checked for success. If operation currently running, then GSR.7 e 0. If device pending sleep, then GSR.7 e 0. Operation aborted: Unsuccessful due to Abort command. The device contains two Page Buffers. Selected Page Buffer is currently busy with WSM operation GSR.0 e PAGE BUFFER SELECT STATUS 1 e Page Buffer 1 Selected 0 e Page Buffer 0 Selected NOTE: 1. When multiple operations are queued, checking BSR.7 only provides indication of completion for that particular block. GSR.7 provides indication when all queued operations are completed. 17 VS28F016SV, MS28F016SV FlashFile TM Memory 4.7 Block Status Register BS BLS BOS BOAS QS VPPS VPPL R 7 6 5 4 3 2 1 0 BSR.7 e BLOCK STATUS 1 e Ready 0 e Busy BSR.6 1 0 BSR.5 1 0 BLOCK LOCK STATUS Block Unlocked for Write/Erase Block Locked for Write/Erase BLOCK OPERATION STATUS Operation Unsuccessful Operation Successful or Currently Running BSR.4 e BLOCK OPERATION ABORT STATUS 1 e Operation Aborted 0 e Operation Not Aborted MATRIX 5/4 0 0 e Operation Successful or Currently Running 0 1 e Not a Valid Combination 1 0 e Operation Unsuccessful 1 1 e Operation Aborted BSR.3 e QUEUE STATUS 1 e Queue Full 0 e Queue Available BSR.2 e VPP STATUS 1 e VPP Error Detect, Operation Abort 0 e VPP OK BSR.1 e VPP LEVEL 1 e VPP Detected at 5.0V g 10% 0 e VPP Detected at 12.0V g 5% NOTES: [1] RY/BYÝ output or BS bit must be checked to determine completion of an operation (Block Lock, Suspend, Erase or Data Write) before the appropriate Status bits (BOS, BLS) is checked for success. e e e e e e The BOAS bit will not be set until BSR.7 e 1. Operation halted via Abort command. BSR.1 is not guaranteed to report accurate feedback between the VPPH1 and VPPH2 voltage ranges. Writes and erases with VPP between VPPLK(max) and VPPH1 (min), between VPPH1(max) and VPPH2(min), and above VPPH2(max) produce spurious results and should not be attempted. BSR.1 was a RESERVED bit on the 28F016SA. BSR.0 e RESERVED FOR FUTURE ENHANCEMENTS This bit is reserved for future use; mask it out when polling the BSRs. NOTE: 1. When multiple operations are queued, checking BSR.7 only provides indication of completion for that particular block. GSR.7 provides indication when all queued operations are completed. 18 VS28F016SV, MS28F016SV FlashFile TM Memory 4.8 Device Configuration Code R R R R R RB2 RB1 RB0 7 6 5 4 3 2 1 0 NOTES: DCC.2-DCC.0 e RY/BYÝ CONFIGURATION (RB2-RB0) Undocumented combinations of RB2-RB0 are reserved by Intel Corporation for future 001 e Level Mode (Default) implementations and should not be used. 010 e Pulse-On-Write 011 e Pulse-On-Erase 100 e RY/BYÝ Disabled 101 e Pulse-On-Write/Erase DCC.7-DCC.3 e RESERVED FOR FUTURE ENHANCEMENTS These bits are reserved for future use; mask them out when reading the Device Configuration Code. Set these bits to ‘‘0’’ when writing the desired RY/BYÝ configuration to the device. 19 VS28F016SV, MS28F016SV FlashFile TM Memory 5.0 ELECTRICAL SPECIFICATIONS NOTICE: This data sheet contains information on products in the sampling and initial production phases of development. The specifications are subject to change without notice. Verify with your local Intel Sales office that you have the latest data sheet before finalizing a design. 5.1 Absolute Maximum Ratings* Temperature Under Bias ÐSE1 ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ b 55§ C to a 125§ C ÐSE2 ÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀÀ b 40§ C to a 125§ C Storage Temperature ÀÀÀÀÀÀÀÀÀÀÀÀ b 65§ to a 125§ C *WARNING: Stressing the device beyond the ‘‘Absolute Maximum Ratings’’ may cause permanent damage. These are stress ratings only. Operation beyond the ‘‘Operating Conditions’’ is not recommended and extended exposure beyond the ‘‘Operating Conditions’’ may affect device reliability. VCC e 3.3V g 0.15V Systems(4) Min Max Units TCSE2 Sym Operating Temperature, SE2 Parameter Notes b 40 a 125 §C TCSE1 Operating Temperature, SE1 b 55 a 125 §C VCC VCC with Respect to GND 1 b 0.2 7.0 V 1,2 b 0.2 14.0 V b 0.5 VCC a 0.5 V VPP VPP Supply Voltage with Respect to GND V Voltage on any Pin (except VCC,VPP) with Respect to GND I Current into any Non-Supply Pin 5 g 30 mA IOUT Output Short Circuit Current 3 100 mA 1,5 Test Conditions VCC e 5.0V g 0.5V, VCC e 5.0V g 0.25V Systems(4, 5) Sym Parameter TCSE2 Operating Temperature, SE2 TCSE1 Operating Temperature, SE1 VCC VCC with Respect to GND Notes Min Max Units b 40 a 125 §C b 55 a 125 §C 1 b 0.2 7.0 V VPP VPP Supply Voltage with Respect to GND 1,2 b 0.2 14.0 V V Voltage on any Pin (except VCC,VPP) with Respect to GND 1,5 b 2.0 7.0 V I Current into any Non-Supply Pin 5 g 30 mA IOUT Output Short Circuit Current 3 100 mA Test Conditions NOTES: 1. Minimum DC voltage is b0.5V on input/output pins. During transitions, this level may undershoot to b2.0V for periods k 20 ns. Maximum DC voltage on input/output pins is VCC a 0.5V which, during transitions, may overshoot to VCC a 2.0V for periods k20 ns. 2. Maximum DC voltage on VPP may overshoot to a 14.0V for periods k20 ns. 3. Output shorted for no more than one second. No more than one output shorted at a time. 4. AC specifications are valid at both voltage ranges. See DC Characteristics tables for voltage range-specific specifications. 5. This specification also applies to pin marked ‘‘NC’’. 6. 5% VCC specifications refer to the VS/MS28F016SV-80 in its high speed test configuration. 20 VS28F016SV, MS28F016SV FlashFile TM Memory 5.2 Capacitance For a 3.3V g 0.15V System: Notes Typ Max Units Test Conditions CIN Sym Capacitance Looking into an Address/Control Pin Parameter 1 6 8 pF TA e 25§ C, f e 1.0 MHz COUT Capacitance Looking into an Output Pin 1 8 12 pF TA e 25§ C, f e 1.0 MHz CLOAD Load Capacitance Driven by Outputs for Timing Specifications 50 pF For VCC e 3.3V g 0.15V 2.5 ns 50X transmission line delay 1,2 Equivalent Load Timing Circuit For a 5.0V System: Notes Typ Max Units Test Conditions CIN Sym Capacitance Looking into an Address/Control Pin Parameter 1 6 8 pF TA e 25§ C, f e 1.0 MHz COUT Capacitance Looking into an Output Pin 1 8 12 pF TA e 25§ C, f e 1.0 MHz CLOAD Load Capacitance Driven by Outputs for Timing Specifications 100 pF For VCC e 5.0V g 0.5V 30 pF For VCC e 5.0V g 0.25V Equivalent Testing Load Circuit for VCC g 10% 2.5 ns 25X transmission line delay Equivalent Testing Load Circuit for VCC g 5% 2.5 ns 85X transmission line delay 1,2 NOTES: 1. Sampled, not 100% tested. Guaranteed by design. 2. To obtain iBIS models for the VS/MS28F016SV, please contact your local Intel/Distribution Sales Office. 21 VS28F016SV, MS28F016SV FlashFile TM Memory 5.3 Timing Nomenclature tCE tELQV time(t) from CEÝ (E) going low (L) to the outputs (Q) becoming valid (V) All 3.3V system timings are measured from where signals cross 1.5V. tOE For 5.0V systems use the standard JEDEC cross point definitions. tACC tGLQV time(t) from OE Ý (G) going low (L) to the outputs (Q) becoming valid (V) tAVQV time(t) from address (A) valid (V) to the outputs (Q) becoming valid (V) tAS Each timing parameter consists of 5 characters. Some common examples are defined as follows: tDH tAVWH time(t) from address (A) valid (V) to WEÝ (W) going high (H) tWHDX time(t) from WEÝ (W) going high (H) to when the data (D) can become undefined (X) Pin Characters 22 Pin States A Address Inputs H High D Data Inputs L Low Q Data Outputs V Valid E CEÝ (Chip Enable) X Driven, but not Necessarily Valid Z High Impedance F BYTEÝ (Byte Enable) G OEÝ (Output Enable) W WEÝ (Write Enable) P RPÝ (Deep Power-Down Pin) R RY/BYÝ (Ready Busy) V Any Voltage Level Y 3/5Ý Pin 5V VCC at 4.5V Minimum 3V VCC at 3.15V Minimum VS28F016SV, MS28F016SV FlashFile TM Memory 271312 – 6 AC test inputs are driven at VOH (2.4 VTTL) for a Logic ‘‘1’’ and VOL (0.45 VTTL) for a Logic ‘‘0.’’ Input timing begins at VIH (2.0 VTTL) and VIL (0.8 VTTL). Output timing ends at VIH and VIL. Input rise and fall times (10% to 90%) k10 ns. Figure 6. Transient Input/Output Reference Waveform for VCC e 5.0V g 10% (Standard Testing Configuration) 271312 – 7 AC test inputs are driven at 3.15V for a Logic ‘‘1’’ and 0.0V for a Logic ‘‘0.’’ Input timing begins, and output timing ends, at 1.5V. Input rise and fall times (10% to 90%) k10 ns. Figure 7. Transient Input/Output Reference Waveform (VCC e 3.3V g 0.15V) High Speed Reference Waveform (VCC e 5.0V g 5%) NOTE: 1. Testing characteristics for VS/MS28F016SV-085 (Standard Testing Configuration) and VS/MS28F016SV-100. 23 VS28F016SV, MS28F016SV FlashFile TM Memory 2.5 ns of 25X Transmission Line Total Capacitance e 100 pF 271312 – 8 Figure 8. Transient Equivalent Testing Load Circuit (VCC e 5.0V g 10%) 2.5 ns of 50X Transmission Line Total Capacitance e 50 pF 271312 – 9 Figure 9. Transient Equivalent Testing Load Circuit (VCC e 3.3V g 0.15V) 2.5 ns of 83X Transmission Line Total Capacitance e 30 pF 271312 – 10 Figure 10. High Speed Transient Equivalent Testing Load Circuit (VCC e 5.0V g 5%) 24 VS28F016SV, MS28F016SV FlashFile TM Memory 5.4 DC Characteristics VCC e 3.3V g 0.15V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C Sym Parameter Notes Min Max Units Test Conditions ILI Input Load Current 1 g1 mA VCC e VCC Max, VIN e VCC or GND ILO Output Leakage Current 1 g 10 mA VCC e VCC Max, VOUT e VCC or GND ICCS VCC Standby Current 1,5 130 mA VCC e VCC Max, CE0Ý, CE1Ý, RPÝ e VCC g 0.2V BYTEÝ, WPÝ, 3/5Ý e VCC g 0.2V or GND g 0.2V 4 mA VCC e VCC Max, CE0Ý, CE1Ý, RPÝ e VIH BYTEÝ, WPÝ, 3/5Ý e VIH or VIL ICCD VCC Deep PowerDown Current 1 50 mA RPÝ e GND g 0.2V BYTEÝ e VCC g 0.2V or GND g 0.2V ICCR1 VCC Read Current 1,4,5 60 mA VCC e VCC Max CMOS: CE0Ý, CE1Ý e GND g 0.2V BYTEÝ e GND g 0.2V or VCC g 0.2V Inputs e GND g 0.2V or VCC g 0.2V TTL: CE0Ý, CE1Ý e VIL, BYTEÝ e VIL or VIH INPUTS e VIL or VIH, f e 8 MHz, IOUT e 0 mA ICCR2 VCC Read Current 1,4,5,6 40 mA VCC e VCC Max CMOS: CE0Ý, CE1Ý e GND g 0.2V BYTEÝ e GND g 0.2V or VCC g 0.2V Inputs e GND g 0.2V or VCC g 0.2V TTL: CE0Ý, CE1Ý e VIL, BYTEÝ e VIL or VIH INPUTS e VIL or VIH, f e 4 MHz, IOUT e 0 mA 25 VS28F016SV, MS28F016SV FlashFile TM Memory 5.4 DC Characteristics (Continued) VCC e 3.3V g 0.3V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C Sym Parameter Notes ICCW VCC Write Current 1,6 ICCE VCC Block Erase Current Min Max Units Test Conditions 12 mA Word/Byte Write in Progress VPP e 12.0V g 5% 17 mA Word/Byte Write in Progress VPP e 5.0V g 10% 12 mA Block Erase in Progress VPP e 12.0V g 5% 17 mA Block Erase in Progress VPP e 5.0V g 10% 1,2 6 mA CE0Ý, CE1Ý e VIH Block Erase Suspended g 100 mA VPP s VCC 1,6 ICCES VCC Erase Suspend Current IPPS IPPR VPP Standby/Read Current 1 200 mA VPP l VCC IPPD VPP Deep PowerDown Current 1 50 mA RPÝ e GND g 0.2V IPPW VPP Write Current 1 15 mA VPP e 12.0V g 5% Word/Byte Write in Progress 25 mA VPP e 5.0V g 10% Word/Byte Write in Progress 10 mA VPP e 12.0V g 5% Block Erase in Progress 20 mA VPP e 5.0V g 10% Block Erase in Progress 200 mA VPP e VPPH1 or VPPH2, Block Erase Suspended 0.8 V IPPE VPP Erase Current IPPES VPP Erase Suspend Current VIL Input Low Voltage VIH Input High Voltage 1 1 b 0.3 VCC 2.0 a V 0.3 VOL 26 Output Low Voltage 0.4 V VCC e VCC Min and IOL e 4 mA VS28F016SV, MS28F016SV FlashFile TM Memory 5.4 DC Characteristics (Continued) VCC e 3.3V g 0.15V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C Sym VOH1 Parameter Notes Output High Voltage VOH2 Min Max Units Test Conditions 2.4 V IOH e b 2.0 mA VCC e VCC Min VCC b 0.2 V IOH e b 100 mA VCC e VCC Min VPPLK VPP Erase/Write Lock Voltage 3 0.0 1.8 V VPPH1 VPP during Write/Erase Operations 3 4.5 5.5 V VPPH2 VPP during Write/Erase Operations 3 11.4 12.6 V VLKO VCC Erase/Write Lock Voltage 1.8 V NOTES: 1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (package and speeds). 2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of ICCES and ICCR. 3. Block Erases, Word/Byte Writes and Lock Block operations are inhibited when VPP s VPPLK and not guaranteed in the ranges between VPPLK(max) and VPPH1(min), between VPPH1(max) and VPPH2(min) and above VPPH2(max). 4. Automatic Power Savings (APS) reduces ICCR to less than 3 mA in static operation. 5. CMOS Inputs are either VCC g 0.2V or GND g 0.2V. TTL Inputs are either VIL or VIH. 6. Sampled, but not 100% tested. Guaranteed by design. 27 VS28F016SV, MS28F016SV FlashFile TM Memory 5.5 DC Characteristics VCC e 5.0V g 0.5V, 5.0V g 0.25V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C Parameter Notes Max Units ILI Sym Input Load Current 1 Min g1 mA VCC e VCC Max VIN e VCC or GND Test Conditions ILO Output Leakage Current 1 g 10 mA VCC e VCC Max VIN e VCCor GND ICCS VCC Standby Current 1,5 130 mA VCC e VCC Max CE0Ý, CE1Ý, RPÝ e VCC g 0.2V BYTEÝ, WPÝ e VCC g 0.2V or GND g 0.2V 4 mA VCC e VCC Max CE0Ý, CE1Ý, RPÝ e VIH BYTEÝ, WPÝ, 3/5Ý e VIH or VIL ICCD VCC Deep PowerDown Current 1 50 mA RPÝ e GND g 0.2V BYTEÝ e VCC g 0.2V or GND g 0.2V ICCR1 VCC Read Current 1,4,5 135 mA VCC e VCC Max, CMOS:CE0Ý, CE1Ý e GND g 0.2V BYTEÝ e GND g 0.2V or VCC g 0.2V Inputs e GND g 0.2V or VCC g 0.2V TTL: CE0Ý, CE1Ý e VIL, BYTEÝ e VIL or VIH, Inputs e VIL or VIH, f e 10 MHz, IOUT e 0 mA ICCR2 VCC Read Current 1,4,5,6 90 mA VCC e VCC Max, CMOS:CE0Ý, CE1Ý e GND g 0.2V BYTEÝ e GND g 0.2V or VCC g 0.2V Inputs e GND g 0.2V or VCC g 0.2V TTL: CE0Ý, CE1Ý e VIL, BYTEÝ e VIL or VIH, Inputs e VIL or VIH, f e 5 MHz, IOUT e 0 mA 28 VS28F016SV, MS28F016SV FlashFile TM Memory 5.5 DC Characteristics (Continued) VCC e 5.0V g 0.5V, 5.0V g 0.25V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C Sym Parameter Notes ICCW VCC Write Current 1,6 ICCE VCC Block Erase Current Min Max Units 35 mA Word/Byte in Progress VPP e 12.0V g 5% 40 mA Word/Byte in Progress VPP e 5.0V g 10% 25 mA Block Erase in Progress VPP e 12.0V g 5% 30 mA Block Erase in Progress VPP e 5.0V g 10% 1,2 10 mA CE0Ý, CE1Ý e VIH Block Erase Suspended g 100 mA VPP s VCC 200 mA VPP l VCC 1,6 Test Conditions ICCES VCC Erase Suspend Current IPPS IPPR VPP Standby/Read Current 1 IPPD VPP Deep PowerDown Current 1 50 mA RPÝ e GND g 0.2V IPPW VPP Write Current 1,6 12 mA VPP e 12.0V g 5% Word/Byte Write in Progress 22 mA VPP e 5.0V g 10% Word/Byte Write in Progress 10 mA VPP e 12.0V g 5% Block Erase in Progress 20 mA VPP e 5.0V g 10% Block Erase in Progress 200 mA VPP e VPPH1 or VPPH2, Block Erase Suspended IPPE VPP Block Erase Current 1,6 IPPES VPP Erase Suspend Current 1 VIL Input Low Voltage 6 b 0.5 0.8 V VIH Input High Voltage 6 2.0 VCC a 0.5 V 29 VS28F016SV, MS28F016SV FlashFile TM Memory 5.5 DC Characteristics (Continued) VCC e 5.0V g 0.5V, 5.0V g 0.25V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C Sym Parameter Notes VOL Output Low Voltage 6 VOH1 Output High Voltage 6 VOH2 6 Min Max Units 0.45 V VCC e VCC Min IOL e 5.8 mA V IOH e b 2.5 mA VCC e VCC Min 0.85 VCC VCC IOH e b 100 mA VCC e VCC Min b 0.4 VPPLK VPP Write/Erase Lock Voltage VPPH1 3,6 Test Conditions 0.0 1.8 V VPP during Write/Erase Operations 4.5 5.5 V VPPH2 VPP during Write/Erase Operations 11.4 12.6 V VLKO VCC Write/Erase Lock Voltage 1.8 V NOTES: 1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (package and speeds). 2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of ICCESand ICCR. 3. Block Erases, Word/Byte Writes and Lock Block operations are inhibited when VPP s VPPLK and not guaranteed in the ranges between VPPLK(max) and VPPH1(min), between VPPH1(max) and VPPH2(min) and above VPPH2(max). 4. Automatic Power Saving (APS) reduces ICCR to less than 1 mA in Static operation. 5. CMOS Inputs are either VCC g 0.2V or GND g 0.2V. TTL Inputs are either VIL or VIH. 6. Sampled, not 100% tested. Guaranteed by design. 30 VS28F016SV, MS28F016SV FlashFile TM Memory 5.6 AC CharacteristicsÐRead Only Operations(1) VCC e 3.3V g 0.15V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 50 pF Versions Sym Parameter Notes Min Max 120 Units tAVAV Read Cycle Time tAVQV Address to Output Delay (TACC) ns tELQV CEÝ to Output Delay (TCE) tPHQV RPÝ High to Output Delay tGLQV OEÝ to Output Delay (TOE) tELQX CEÝ to Output in Low Z 3,7 tEHQZ CEÝ to Output in High Z 3,7 tGLQX OEÝ to Output in Low Z 3 tGHQZ OEÝ to Output in High Z tOH Output Hold from Address, CEÝ or OEÝ Change, Whichever Occurs First tFLQV tFHQV BYTEÝ to Output Delay 3 120 ns tFLQZ BYTEÝ Low to Output in High Z 3 30 ns tELFL tELFH CEÝ Low to BYTEÝ High or Low 3,7 5 ns 120 2,7 2 120 ns 620 ns 45 0 50 3 ns ns 0 ns ns 30 3,7 ns 0 ns ns Extended Status Register Reads Sym Parameter Notes Min tAVEL Address Setup to CEÝ Going Low 3,7,8,9 0 Max Units ns tAVGL Address Setup to OEÝ Going Low 3,7,9 0 ns 31 VS28F016SV, MS28F016SV FlashFile TM Memory 5.6 AC CharacteristicsÐRead Only Operations(1) (Continued) VCC e 5.0V g 0.25V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 30 pF VCC e 5.0V g 0.5V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 100 pF VS/MS28F016SV-85 VCC g 5%(5) Versions(4) Sym Parameter Notes Min VS/MS28F016SV-85 VCC g 10%(6) Max Min 80 VS/MS28F016SV-100 VCC g 10% Max Min tAVAV Read Cycle Time tAVQV Address to Output Delay (TACC) tELQV CEÝ to Output Delay (TCE) tPHQV RPÝ to Output Delay tGLQV OEÝ to Output Delay (TOE) 2 tELQX CEÝ to Output in Low Z 3 tEHQZ CEÝ to Output in High Z 3 tGLQX OEÝ to Output in Low Z 3 tGHQZ OEÝ to Output in High Z 3 tOH Output Hold from Address, CEÝ or OEÝ Change, Whichever Occurs First 3 tFLQV tFHQV BYTEÝ to Output Delay 3 80 85 100 ns tFLQZ BYTEÝ Low to Output in High Z 3 25 30 35 ns tELFL tELFH CEÝ Low to BYTEÝ High or Low 3 5 5 5 ns 2 85 Unit Max 100 ns 80 85 100 ns 80 85 100 ns 400 480 480 ns 30 35 40 ns 0 0 0 25 ns 30 0 35 0 0 25 ns 30 0 35 0 ns 0 ns ns Extended Status Register Reads Sym tAVEL Parameter Address Setup to CEÝ Going Notes Min Max Min Max Min Max Unit 3,7,8,9 0 0 0 ns 3,7,9 0 0 0 ns Low tAVGL 32 Address Setup to OEÝ Going Low VS28F016SV, MS28F016SV FlashFile TM Memory NOTES: 1. See AC Input/Output Reference Waveforms for timing measurements, Figures 6 and 7. 2. OEÝ may be delayed up to tELQV – tGLQV after the falling edge of CEÝ, without impacting tELQV. 3. Sampled, not 100% tested. Guaranteed by design. 4. Device speeds are defined as: 80/85, 100 ns at VCC e 5.0V equivalent to 120 ns at VCC e 3.3V 5. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit. 6. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit. 7. CExÝ is defined as the latter of CE0Ý or CE1Ý going low, or the f. 8. This timing parameter is used to latch the correct BSR data onto the outputs. 9. The address setup requirement for Extended Status Register reads must only be met referenced to the falling edge of the last control signal to become active (CE0Ý, CE1Ý, or OEÝ). For example, if CE0Ý or CE1Ý are activated prior to OEÝ for an Extended Status Register read, specification tAVGL must be met. On the other hand, if either CE0Ý or CE1Ý (or both) are activated after OEÝ, specification tAVEL must be referenced. 271312 – 11 NOTE: CExÝ is defined as the latter of CE0Ý or CE1Ý going low, or the first of CE0Ý or CE1Ý going high. Figure 11. Read Timing Waveforms 33 VS28F016SV, MS28F016SV FlashFile TM Memory 271312 – 12 NOTE: CExÝ is defined as the latter of CE0Ý or CE1Ý going low, or the first of CE0Ý or CE1Ý going high. Figure 12. BYTEÝ Timing Waveforms 34 VS28F016SV, MS28F016SV FlashFile TM Memory 5.7 Power-Up and Reset Timings 271312 – 22 Figure 13. VCC Power-Up and RPÝ Reset Waveforms Symbol Parameter Notes Min Max Unit tPLYL tPLYH RPÝ Low to 3/5Ý Low (High) 0 ms tYLPH tYHPH 3/5Ý Low (High) to RPÝ High 1 2 ms tPL5V tPL3V RPÝ Low to VCC at 4.5V minimum (to VCC at 3.0V min or 3.6V max) 2 0 ms tPHEL3 RPÝ High to CEÝ Low (3.3V VCC) 1 405 ns tPHEL5 RPÝ High to CEÝ Low (5V VCC) 1 330 ns tAVQV Address Valid to Data Valid for VCC e 5V g 10% 3 70 ns tPHQV RPÝ High to Data Valid for VCC e 5V g 10% 3 400 ns NOTES: CE0Ý, CE1Ý and OEÝ are switched low after Power-Up. 1. The tYLPH and/or tYHPH times must be strictly followed to guarantee all other read and write specifications for the VS/MS28F016SV. 2. The power supply may start to switch concurrently with RPÝ going low. 3. The address access time and RPÝ high to data valid time are shown for 5.0V VCC operation of the 28F016SV-085 (Standard Test Configuration). Refer to the AC ChracteristicsÐRead Only Operations for 3.3V VCC and 5.0V VCC (High Speed Test Configuration) values. 35 VS28F016SV, MS28F016SV FlashFile TM Memory 5.8 AC Characteristics for WEÝÐControlled Command Write Operations(1) VCC e 3.3V g 0.15V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 50 pF Versions Sym 36 Parameter Notes Min Max Unit tAVAV Write Cycle Time tVPWH(1,2) VPP Setup to WEÝ Going High 120 ns 3 100 ns tPHEL tELWL RPÝ Setup to CEÝ Going Low 3,7 480 ns CEÝ Setup to WEÝ Going Low 3,7 10 ns tAVWH Address Setup to WEÝ Going High 2,6 75 ns tDVWH Data Setup to WEÝ Going High 2,6 75 ns tWLWH WEÝ Pulse Width 75 ns tWHDX Data Hold from WEÝ High 2 10 ns tWHAX Address Hold from WEÝ High 2 10 ns tWHEH CEÝ Hold from WEÝ High 3,7 10 ns tWHWL WEÝ Pulse Width High tGHWL Read Recovery before Write tWHRL WEÝ High to RY/BYÝ Going Low 3 tRHPL RPÝ Hold from Valid Status Register (CSR, GSR, BSR) Data and RY/BYÝ High 3 0 ns tPHWL RPÝ High Recovery to WEÝ Going Low 3 480 ns tWHGL Write Recovery before Read tQVVL(1,2) VPP Hold from Valid Status Register (CSR, GSR, BSR) Data and RY/BYÝ High tWHQV(1) Duration of Word/Byte Write Operation tWHQV(2) Duration of Block Erase Operation 3 45 ns 0 ns 100 ns 95 ns 3 0 ms 3,4,5,11 5 ms 3,4 0.3 10 sec VS28F016SV, MS28F016SV FlashFile TM Memory 5.8 AC Characteristics for WEÝÐControlled Command Write Operations(1) (Continued) VCC e 5.0V g 0.25V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 30 pF VCC e 5.0V g 0.5V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 100 pF VS/MS28F016SV-85 VCC g 5% Versions Sym Parameter tAVAV Write Cycle Time tVPWH(1) tVPWH(2) VPP Setup to WEÝ Going High tPHEL Notes Min Max VS/MS28F016SV-85 VCC g 10% Min Max VS/MS28F016SV-100 VCC g 10% Min Unit Max 80 85 100 ns 3 100 100 100 ns RPÝ Setup to CEÝ Going Low 3,7 480 480 480 ns tELWL CEÝ Setup to WEÝ Going Low 3,7 0 0 0 ns tAVWH Address Setup to WEÝ Going High 2,6 50 50 50 ns tDVWH Data Setup to WEÝ Going High 2,6 50 50 50 ns tWLWH WEÝ Pulse Width 50 60 70 ns tWHDX Data Hold from WEÝ High 2 10 10 10 ns tWHAX Address Hold from WEÝ High 2 10 10 10 ns tWHEH CEÝ Hold from WEÝ High 3,7 10 10 10 ns tWHWL WEÝ Pulse Width High 30 30 30 ns tGHWL Read Recovery before Write 3 0 0 0 ns tWHRL WEÝ High to RY/BYÝ Going Low 3 tRHPL RPÝ Hold from Valid Status Register (CSR, GSR, BSR) Data and RY/BY Ý High 3 100 0 100 0 100 0 ns ns 37 VS28F016SV, MS28F016SV FlashFile TM Memory 5.8 AC Characteristics for WEÝÐControlled Command Write Operations(1) VCC e 5.0V g 0.25V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 30 pF VCC e 5.0V g 0.5V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 100 pF (Continued) VS/MS28F016SV-85 VCC g 5% Versions Max VS/MS28F016SV-85 VCC g 10% Parameter Notes Min tPHWL RPÝ High Recovery to WEÝ Going Low 3 1 1 1 ms tWHGL Write Recovery before Read 60 65 70 ns tQVVL(1) tQVVL(2) VPP Hold from Valid Status Register (CSR, GSR, BSR) Data and RY/ BYÝ High 3 0 0 0 ms tWHQV(1) Duration of Word/Byte Write Operation 3,4,5,11 4.5 4.5 4.5 ms tWHQV(2) Duration of Block Erase Operation 3,4 0.3 0.3 Max 10 Min Unit Sym 10 Min VS/MS28F016SV-100 VCC g 10% 0.3 Max 10 sec NOTES: 1. Read timings during write and erase are the same as for normal read. 2. Refer to command definition tables for valid address and data values. 3. Sampled, not 100% tested. Guaranteed by design. 4. Write/Erase durations are measured to valid Status Register (CSR) Data. VPP e 12.0V g 0.6V 5. Word/Byte Write operations are typically performed with 1 Programming Pulse. 6. Address and Data are latched on the rising edge of WEÝ for all Command Write operations. 7. CExÝ is defined as the latter of CE0Ý or CE1Ý going low, or the first of CE0Ý or CE1Ý going high. 8. Device speeds are defined as: 80/85, 100 ns at VCC e 5.0V equivalent to 120 ns at VCC e 3.3V 9. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit. 10. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit. 11. The TBD information will be available in a technical paper. Please contact Intel’s Application Hotline or your local sales office for more information. 38 VS28F016SV, MS28F016SV FlashFile TM Memory 271312 – 23 NOTES: 1. This address string depicts data write/erase cycles with corresponding verification via ESRD. 2. This address string depicts data write/erase cycles with corresponding verification via CSRD. 3. This cycle is invalid when using CSRD for verification during data write/erase operations. 4. CExÝ is defined as the latter of CE0Ý or CE1Ý going low or the first of CE0Ý or CE1Ý going high. 5. RPÝ low transition is only to show tRHPL; not valid for above Read and Write cycles. 6. VPP voltage during write/erase operations valid at both 12.0V and 5.0V. 7. VPP voltage equal to or below VPPLK provides complete flash memory array protection. Figure 14. AC Waveforms for Command Write Operations 39 VS28F016SV, MS28F016SV FlashFile TM Memory 5.9 AC Characteristics for CEÝÐControlled Command Write Operations(1) VCC e 3.3V g 0.15V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 50 pF Versions Sym Notes Min Max Unit tAVAV Write Cycle Time 120 ns tPHWL RPÝ Setup to WEÝ Going Low 3 480 ns tVPEH VPP Setup to CEÝ Going High 3,7 100 ns tWLEL WEÝ Setup to CEÝ Going Low 3,7 0 ns tAVEH Address Setup to CEÝ Going High 2,6,7 75 ns tDVEH Data Setup to CEÝ Going High 2,6,7 75 ns tELEH CEÝ Pulse Width 7 75 ns tEHDX Data Hold from CEÝ High 2,7 10 ns tEHAX Address Hold from CEÝ High 2,7 10 ns tEHWH WEÝ hold from CEÝ High 3 10 ns tEHEL CEÝ Pulse Width High 7 45 ns tGHEL Read Recovery before Write 3 0 tEHRL CEÝ High to RY/BYÝ Going Low tRHPL RPÝ Hold from Valid Status Register (CSR, GSR, BSR) Data and RY/BYÝ High tPHEL RPÝ High Recovery to CEÝ Going Low tEHGL Write Recovery before Read tQVVL(1,2) VPP Hold from Valid Status Register (CSR, GSR, BSR) Data and RY/BYÝ High tEHQV(1) Duration of Word/Byte Write Operation tEHQV(2) Duration of Block Erase Operation (1,2) 40 Parameter 3,7 ns 100 ns 3 0 3,7 480 ns 95 ns 0 ms 3 3,4,5,11 5 4 0.3 ns ms 10 sec VS28F016SV, MS28F016SV FlashFile TM Memory 5.9 AC Characteristics for CEÝÐControlled Command Write Operations(1) (Continued) VCC e 5.0V g 0.25V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 30 pF VCC e 5.0V g 0.5V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 100 pF Versions(4) Sym Parameter tAVAV Write Cycle Time tPHWL RPÝ Setup to WEÝ Going Low tVPEH(1,2) Notes VS/MS28F016SV-85 VS/MS28F016SV-85 VCC g 5% VCC g 10% Min Max Min Max VS/MS28F016SV-100 VCC g 10% Min Unit Max 80 85 100 ns 3 480 480 480 ns VPP Setup to CEÝ Going High 3,7 100 100 100 ns tWLEL WEÝ Setup to CEÝ Going Low 3,7 0 0 0 ns tAVEH Address Setup to CEÝ Going High 2,6,7 50 50 50 ns tDVEH Data Setup to CEÝ Going High 2,6,7 50 50 50 ns tELEH CEÝ Pulse Width 7 50 60 70 ns tEHDX Data Hold from CEÝ High 2,7 10 10 10 ns tEHAX Address Hold from CEÝ High 2,7 10 10 10 ns tEHWH WE Hold from CEÝ High 3,7 10 10 10 ns tEHEL CEÝ Pulse Width High 7 30 30 30 ns tGHEL Read Recovery before Write 3 0 0 0 ns tEHRL CEÝ High to RY/BYÝ Going Low 3,7 tRHPL RPÝ Hold from Valid Status Register (CSR, GSR, BSR) Data and RY/BYÝ High 3 100 0 100 0 100 0 ns ns 41 VS28F016SV, MS28F016SV FlashFile TM Memory 5.9 AC Characteristics for CEÝÐControlled Command Write Operations(1) VCC e 5.0V g 0.25V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 30 pF VCC e 5.0V g 0.5V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 100 pF (Continued) Versions(4) Sym Parameter VS/MS28F016SV-85 VS/MS28F016SV-85 VCC g 5% VCC g 10% 3,7 1 1 1 ms 60 65 70 ns 3 0 0 0 ms 4.5 4.5 ms tEHGL Write Recovery before Read tQVVL(1,2) VPP Hold from Valid Status Register (CSR, GSR, BSR) Data at RY/BYÝ High tEHQV(1) Duration of Word/Byte Write Operation 3,4,5,11 4.5 tEHQV(2) Duration of Block Erase Operation 3,4 0.3 10 0.3 Max 10 Min Unit Min RPÝ High Recovery to CEÝ Going Low Min VCC g 10% Notes tPHEL Max VS/MS28F016SV-100 0.3 Max 10 sec NOTES: 1. Read timings during write and erase are the same as for normal read. 2. Refer to command definition tables for valid address and data values. 3. Sampled, not 100% tested. Guaranteed by design. 4. Write/erase durations are measured to valid Status Data. VPP e 12.0V g 0.6V. 5. Word/Byte Write operations are typically performed with 1 Programming Pulse. 6. Address and Data are latched on the rising edge of CEÝ for all command write operations. 7. CExÝ is defined as the latter of CE0Ý or CE1Ý going low, or the first of CE0Ý or CE1Ý going high. 8. Device speeds are defined as: 80/85, 100 ns at VCC e 5.0V equivalent to 120 ns at VCC e 3.3V 9. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit. 10. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit. 11. The TBD information will be available in a technical paper. Please contact Intel’s Application Hotline or your local sales office for more information. 42 VS28F016SV, MS28F016SV FlashFile TM Memory 271312 – 24 NOTES: 1. This address string depicts data-write/erase cycles with corresponding verification via ESRD. 2. This address string depicts data-write/erase cycles with corresponding verification via CSRD. 3. This cycle is invalid when using CSRD for verification during data write/erase operations. 4. CExÝ is defined as the latter of CE0Ý or CE1Ý going low or the first of CE0Ý or CE1Ý going high. 5. RPÝ low transition is only to show tRHPL; not valid for above Read and Write cycles. 6. VPP voltage during Write/Erase operations valid at both 12.0V and 5.0V. 7. VPP voltage equal to or below VPPLK provides complete flash memory array protection. Figure 15. Alternate AC Waveforms for Command Write Operations 43 VS28F016SV, MS28F016SV FlashFile TM Memory 5.10 AC Characteristics for WEÝÐControlled Page Buffer Write Operations(1) VCC e 3.3V g 0.3V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 50 pF Versions 28F016SV-120 Sym Parameter Notes Min tAVWL Address Setup to WEÝ Going Low 2 25 Typ Max Unit ns VCC e 5.0V g 0.5V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 50 pF Versions(3) VCC g 5% 28F016SV-080(4) VCC g 10% 28F016SV-080(5) Sym Parameter Notes Min tAVWL Address Setup to WEÝ Going Low 2 15 Typ Max 28F016SV-085(5) Min 15 NOTES: 1. All other specifications for WEÝÐControlled Write Operations can be found in section 5.8. 2. Address must be valid during the entire WEÝ low pulse. 3. Device speeds are defined as: 80/85, 100 ns at VCC e 5.0V equivalent to 120 ns at VCC e 3.3V 4. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit. 5. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit. 44 Typ Unit Max ns VS28F016SV, MS28F016SV FlashFile TM Memory 271312 – 25 NOTE: 1. CEXÝ is defined as the latter of CE0Ý or CE1Ý going low, or the first of CE0Ý or CE1Ý going high. Figure 16. WEÝÐControlled Page Buffer Write Timing Waveforms (Loading Data to the Tape Buffer) 45 VS28F016SV, MS28F016SV FlashFile TM Memory 5.11 AC Characteristics for CEÝÐControlled Page Buffer Write Operations(1) VCC e 3.3V g 0.3V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 50 pF Versions 28F016SV-120 Sym Parameter Notes Min tAVEL Address Setup to CEÝ Going Low 2, 3 25 Typ Unit Max ns VCC e 5.0V g 0.5V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C, Load e 50 pF Versions(4) VCC g 5% 28F016SV-080(5) VCC g 10% 28F016SV-080(6) Sym Parameter Notes Min tAVEL Address Setup to CEÝ Going Low 2, 3 15 Typ Max 28F016SV-085(6) Min Typ 15 Unit Max ns NOTES: 1. All other specifications for CEÝÐControlled Write Operations can be found in section 5.9. 2. Address must be valid during the entire CEÝ low pulse. 3. CExÝ is defined as the latter of CE0Ý or CE1Ý going low, or the first of CE0Ý or CE1Ý going high. 4. Device speeds are defined as: 80/85, 100 ns at VCC e 5.0V equivalent to 120 ns at VCC e 3.3V 5. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit. 6. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit. 271312 – 26 NOTE: 1. CExÝ is defined as the latter of CE0Ý or CE1Ý going low, or the first of CE0Ý or CE1Ý going high. Figure 17. Controller Page Buffer Write Timing Waveforms (Loading Data to the Page Buffer) 46 VS28F016SV, MS28F016SV FlashFile TM Memory 5.12 Erase and Word/Byte Write Performance(3,5) VCC e 3.3V g 0.15V, VPP e 5.0V g 0.5V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C Sym Parameter Notes Typ(1) Units Page Buffer Byte Write Time 2,6,7 8 ms Page Buffer Word Write Time 2,6,7 16 ms tWHRH1A Byte Write Time 2,7 29 ms Test Conditions tWHRH1B Word Write Time 2,7 35 ms tWHRH(2) Block Write Time 2,7 1.9 sec Byte Write Mode tWHRH(3) Block Write Time 2,7 1.2 sec Word Write Mode Block Erase Time 2,7 1.4 sec Full Chip Erase Time 2,7 44.8 sec 4 12 ms 15 ms Erase Suspend Latency Time to Read Auto Erase Suspend Latency Time to Write VCC e 3.3V g 0.15V, VPP e 12.0V g 0.6V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C Sym Parameter Notes Typ(1) Units Page Buffer Byte Write Time 2,6,7 2.2 ms Page Buffer Word Write Time 2,6,7 4.4 ms Test Conditions tWHRH(1) Word/Byte Write Time 2,7 9 ms tWHRH(2) Block Write Time 2,7 0.6 sec Byte Write Mode tWHRH(3) Block Write Time 2,7 0.3 sec Word Write Mode Block Erase Time 2 0.8 sec 2,7 25.6 sec 4 9 ms 12 ms Full Chip Erase Time Erase Suspend Latency Time to Read Auto Erase Suspend Latency Time to Write 47 VS28F016SV, MS28F016SV FlashFile TM Memory 5.12 Erase and Word/Byte Write Performance(3,5) (Continued) VCC e 5.0V, VPP e 5.0V g 0.5V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C Sym Parameter Notes Typ(1) Units Page Buffer Byte Write Time 2,6,7 8 ms Page Buffer Word Write Time 2,6,7 16 ms tWHRH1A Byte Write Time 2,7 20 ms Test Conditions tWHRH1B Word Write Time 2,7 25 ms tWHRH(2) Block Write Time 2,7 1.4 sec Byte Write Mode tWHRH(3) Block Write Time 2,7 0.85 sec Word Write Mode Block Erase Time 2,7 1.0 sec Full Chip Erase Time 2,7 32.0 sec 4 9 ms 12 ms Erase Suspend Latency Time to Read Auto Erase Suspend Latency Time to Write VCC e 5.0V g 0.5V, VPP e 12.0V g 0.6V, TCSE2 e b 40§ C to a 125§ C, TCSE1 e b 55§ C to a 125§ C Sym Parameter Notes Typ(1) Units Page Buffer Byte Write Time 2,6,7 2.1 ms Page Buffer Word Write Time 2,6,7 4.1 ms Test Conditions tWHRH(1) Word/Byte Write Time 2,7 6 ms tWHRH(2) Block Write Time 2,7 0.4 sec Byte Write Mode tWHRH(3) Block Write Time 2,7 0.2 sec Word Write Mode Block Erase Time 2 0.6 sec 2,7 19.2 sec 4 7 ms 10 ms Full Chip Erase Time Erase Suspend Latency Time to Read Auto Erase Suspend Latency Time to Write NOTES: 1. 25§ C, and normal voltages. 2. Excludes system-level overhead. 3. These performance numbers are valid for all speed versions. 4. Specification applies to interrupt latency for single block erase. Suspend latency for erase all unlocked blocks operation extends the maximum latency time to 270 ms. 5. Sampled, but not 100% tested. Guaranteed by design. 6. Assumes using the full Page Buffer to Write to Flash (256 bytes or 128 words). 48 VS28F016SV, MS28F016SV FlashFile TM Memory 6.0 MECHANICAL SPECIFICATIONS 271312 – 27 Figure 18. Mechanical Specifications of the VS/MS28F0165V 56-Lead SSOP Package Family: Shrink Small Out-Line Package Symbol Millimeters Minimum Nominal 1.80 1.90 A1 0.47 0.52 0.57 A2 1.18 1.28 1.38 B 0.25 0.30 0.40 A Maximum C 0.13 0.15 0.20 D 23.40 23.70 24.00 E 13.10 13.30 13.50 e1 He 0.80 15.70 N L1 16.00 16.30 56 0.45 0.50 2§ 3§ Y a Notes 0.55 0.10 4§ b 3§ 4§ 5§ R1 0.45 0.20 0.25 R2 0.15 0.20 0.25 49 VS28F016SV, MS28F016SV FlashFile TM Memory DEVICE NOMENCLATURE V S 2 8 F 0 1 6 S V Ð 8 5 M S 2 8 F 0 1 6 S V Ð 8 5 l V e SE2 M e SE1 l l l Access Speed l SV e SmartVoltage Technology S e SSOP Depending on system design specifcations, the VS/MS28F016SV-85 is capable of supporting Ð 85 ns access time with a VCC of 5.0V g 10% and loading of 100 pF Ð 100 ns access time with a VCC of 5.0V g 10% and loading of 100 pF ADDITIONAL INFORMATION Order Number 297372 Document/Tool 16-Mbit Flash Product Family User’s Manual 292163 AP-610 ‘‘Flash Memory In-System Code and Data Update Techinques’’ 292144 AP-393 ‘‘28F016SV Compatibility with 28F016SA’’ 292127 AP-378 ‘‘System Optimization Using the Enhanced Features of the 28F016SA’’ AP-377 ‘‘16-Mbit Flash Product Family Software Drivers, 28F016SA/ 28F016SV/28F016XS/28F016XD’’ 292126 292124 AP-387 ‘‘Upgrade Considerations from the 28F008SA to the 28F016SA’’ 292123 292092 292165 294016 AP-374 ‘‘Flash Memory Write Protection Techniques’’ AP-357 ‘‘Power Supply Solutions for Flash Memory’’ AB-62 ‘‘Compiling Optimized Code for Embedded Flash RAM Memories’’ ER-33 ‘‘ETOX TM Flash Memory TechnologyÐInsight to Intel’s Fourth Generation Process Innovation’’ 297508 Contact Intel/Distribution Sales Office FLASHBuilder Utility Flash Cycling Utility Contact Intel/Distribution Sales Office Contact Intel/Distribution Sales Office 28F016SV iBIS Models Contact Intel/Distribution Sales Office Contact Intel/Distribution Sales Office 28F016SV Timing Designer Library Files 28F016SV VHDL/Verilog Models 28F016SV Orcad and ViewLogic Schematic Symbols DATA SHEET REVISION HISTORY Number Description 001 Original Version INTEL CORPORATION, 2200 Mission College Blvd., Santa Clara, CA 95052; Tel. (408) 765-8080 Printed in U.S.A./xxxx/1295/B10M/xx xx