IS41C4100 IS41LV4100 ISSI ® 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE PRELIMINARY INFORMATION SEPTEMBER 2001 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply 5V ± 10% (IS41C4100) 3.3V ± 10% (IS41LV4100) The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 4-bit word. These features make the IS41C4100 and IS41LV4100 ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications. • Industrail Temperature Range -40oC to 85oC The IS41C4100 and IS41LV4100 are available in a 20-pin, 300-mil SOJ package. KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. Fast Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -35 35 10 18 12 60 -60 60 15 30 25 110 Unit ns ns ns ns ns PIN DESCRIPTIONS PIN CONFIGURATION 20-Pin SOJ I/O0 1 20 GND I/O1 2 19 I/O3 WE 3 18 I/O2 RAS 4 17 CAS A9 5 16 OE A0-A9 Address Inputs I/O0-I/O3 Data Inputs/Outputs WE Write Enable A0 6 15 A8 OE Output Enable A1 7 14 A7 RAS Row Address Strobe A2 8 13 A6 CAS Column Address Strobe A3 9 12 A5 VCC Power Vcc 10 11 A4 GND Ground NC No Connection This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION 09/10/01 Rev. 00A 1 IS41C4100 IS41LV4100 ISSI ® FUNCTIONAL BLOCK DIAGRAM OE WE CAS CAS CLOCK GENERATOR WE CONTROL LOGICS CAS WE OE CONTROL LOGIC OE RAS CLOCK GENERATOR RAS DATA I/O BUS COLUMN DECODERS SENSE AMPLIFIERS ADDRESS BUFFERS A0-A9 2 ROW DECODER REFRESH COUNTER DATA I/O BUFFERS RAS I/O0-I/O3 MEMORY ARRAY 1,048,576 x 4 Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION Rev. 00A 09/10/01 IS41C4100 IS41LV4100 ISSI ® TRUTH TABLE Function RAS CAS WE Standby H H X X X Read: Word L L H L ROW/COL D OUT Read: Lower Byte L L H L ROW/COL Lower Byte, DOUT Upper Byte, High-Z Read: Upper Byte L H H L ROW/COL Lower Byte, High-Z Upper Byte, DOUT Write: Word (Early Write) L L L X ROW/COL D IN Write: Lower Byte (Early Write) L L L X ROW/COL Lower Byte, DIN Upper Byte, High-Z Write: Upper Byte (Early Write) L H L X ROW/COL Lower Byte, High-Z Upper Byte, DIN Read-Write (1,2) L L H→L L→H ROW/COL DOUT, DIN 1st Cycle: L H→L H L ROW/COL 2nd Cycle: Any Cycle: L L H→L L→H H H L L NA/COL D OUT NA/NA D OUT EDO Page-Mode Write(1) 1st Cycle: 2nd Cycle: L L H→L H→L L L X X ROW/COL, DIN NA/COL D IN EDO Page-Mode DOUT, DIN Read-Write (1,2) 1st Cycle: L H→L H→L L→H ROW/COL 2nd Cycle: L H→L H→L L→H NA/COL DOUT, DIN Read L→H→L L H L ROW/COL Write L→H→L L L X ROW/COL L H X X ROW/NA High-Z H→L L X X X High-Z EDO Page-Mode Read(2) D OUT Hidden Refresh D OUT 2) OE Address tR/tC I/O High-Z D OUT RAS-Only Refresh CBR Refresh(3) Notes: 1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active). 2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active). 3. At least one of the two CAS signals must be active (LCAS or UCAS). Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION 09/10/01 Rev. 00A 3 IS41C4100 IS41LV4100 Functional Description The IS41C4100 and IS41LV4100 is a CMOS DRAM optimized for high-speed bandwidth, low power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 19 address bits. The first ten address bits (A0-A9) are entered as row address and latter nine bits nine address bits (A0-A8) are entered as column address. The row address is latched by the Row Address Strobe (RAS). The column address is latched by the Column Address Strobe (CAS). RAS is used to latch the first nine bits and CAS is used the latter nine bits. Memory Cycle A memory cycle is initiated by bring RAS LOW and it is terminated by returning both RAS and CAS HIGH. To ensures proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum tRAS time has expired. A new cycle must not be initiated until the minimum precharge time tRP, tCP has elapsed. Read Cycle A read cycle is initiated by the falling edge of CAS or OE, whichever occurs last, while holding WE HIGH. The column address must be held for a minimum time specified by tAR. Data Out becomes valid only when tRAC, tAA, tCAC and tOEA are all satisfied. As a result, the access time is dependent on the timing relationships between these parameters. ISSI ® 2. Using a CAS-before-RAS refresh cycle. CAS-beforeRAS refresh is activated by the falling edge of RAS, while holding CAS LOW. In CAS-before-RAS refresh cycle, an internal 10-bit counter provides the row addresses and the external address inputs are ignored. CAS-before-RAS is a refresh-only mode and no data access or device selection is allowed. Thus, the output remains in the High-Z state during the cycle. Extended Data Out Page Mode EDO page mode operation permits all 512 columns within a selected row to be randomly accessed at a high data rate. In EDO page mode read cycle, the data-out is held to the next CAS cycle’s falling edge, instead of the rising edge. For this reason, the valid data output time in EDO page mode is extended compared with the fast page mode. In the fast page mode, the valid data output time becomes shorter as the CAS cycle time becomes shorter. Therefore, in EDO page mode, the timing margin in read cycle is larger than that of the fast page mode even if the CAS cycle time becomes shorter. In EDO page mode, due to the extended data function, the CAS cycle time can be shorter than in the fast page mode if the timing margin is the same. The EDO page mode allows both read and write operations during one RAS cycle, but the performance is equivalent to that of the fast page mode in that case. Write Cycle A write cycle is initiated by the falling edge of CAS and WE, whichever occurs last. The input data must be valid at or before the falling edge of CAS or WE, whichever occurs last. Refresh Cycle To retain data, 1024 refresh cycles are required in each 16 ms period. There are two ways to refresh the memory. Power-On After application of the VCC supply, an initial pause of 200 µs is required followed by a minimum of eight initialization cycles (any combination of cycles containing a RAS signal). During power-on, it is recommended that RAS track with VCC or be held at a valid VIH to avoid current surges. 1. By clocking each of the 1024 row addresses (A0 through A9) with RAS at least once every 16 ms. Any read, write, read-modify-write or RAS-only cycle refreshes the addressed row. 4 Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION Rev. 00A 09/10/01 IS41C4100 IS41LV4100 ISSI ® ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameters VT Voltage on Any Pin Relative to GND VCC Supply Voltage IOUT PD TA Output Current Power Dissipation Commercial Operation Temperature Industrail Temperature Storage Temperature TSTG Rating 5V 3.3V 5V 3.3V Unit –1.0 to +7.0 -0.5 to 4.6 –1.0 to +7.0 -0.5 to 4.6 50 1 0 to +70 –40 to +85 –55 to +125 V V V V mA W °C °C °C Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.) Symbol Parameter VCC Supply Voltage VIH Input High Voltage VIL Input Low Voltage TA Commercial Ambient Temperature Industrail Ambient Temperature 5V 3.3V 5V 3.3V 5V 3.3V Min. Typ. Max. Unit 4.5 3.0 2.4 2.0 –1.0 –0.3 0 –40 5.0 3.3 — — — — — — 5.5 3.6 VCC + 1.0 VCC + 0.3 0.8 0.8 70 85 V V V °C °C CAPACITANCE(1,2) Symbol Parameter CIN1 CIN2 CIO Input Capacitance: A0-A9 Input Capacitance: RAS, CAS, WE, OE Data Input/Output Capacitance: I/O0-I/O3 Max. Unit 5 7 7 pF pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION 09/10/01 Rev. 00A 5 IS41C4100 IS41LV4100 ISSI ® ELECTRICAL CHARACTERISTICS(1) (Recommended Operation Conditions unless otherwise noted.) Symbol Parameter Test Condition Speed Min. Max. Unit IIL Input Leakage Current Any input 0V ≤ VIN ≤ Vcc Other inputs not under test = 0V –5 5 µA IIO Output Leakage Current Output is disabled (Hi-Z) 0V ≤ VOUT ≤ Vcc –5 5 µA VOH Output High Voltage Level IOH = –2.5 mA 2.4 — V VOL Output Low Voltage Level IOL = +2.1 mA — 0.4 V ICC1 Stand-by Current: TTL RAS, CAS ≥ VIH 5V 5V 3V 3V — — — — 2 3 1 4 mA ICC2 Stand-by Current: CMOS RAS, CAS ≥ VCC – 0.2V 5V 3V — — 1 0.5 mA ICC3 Operating Current: Random Read/Write(2,3,4) Average Power Supply Current RAS, CAS, Address Cycling, tRC = tRC (min.) -35 -60 — — 100 75 mA ICC4 Operating Current: EDO Page Mode(2,3,4) Average Power Supply Current RAS = VIL, CAS, Cycling tPC = tPC (min.) -35 -60 — — 120 65 mA ICC5 Refresh Current: RAS-Only(2,3) Average Power Supply Current RAS Cycling, CAS ≥ VIH tRC = tRC (min.) -35 -60 — — 100 75 mA ICC6 Refresh Current: RAS, CAS Cycling CBR(2,3,5) tRC = tRC (min.) Average Power Supply Current -35 -60 — — 100 75 mA Commercial Industrial Commercial Industrial Notes: 1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. Dependent on cycle rates. 3. Specified values are obtained with minimum cycle time and the output open. 4. Column-address is changed once each EDO page cycle. 5. Enables on-chip refresh and address counters. 6 Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION Rev. 00A 09/10/01 IS41C4100 IS41LV4100 ISSI ® AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) -35 Symbol Parameter t RC -60 Min. Max. Min. Max. Units Random READ or WRITE Cycle Time 60 — 110 — ns t RAC Access Time from RAS(6, 7) 35 — 60 — ns t CAC Access Time from CAS — 10 — 15 ns (6, 8, 15) (6) tAA Access Time from Column-Address — 18 — 30 ns tRAS RAS Pulse Width 35 10K 60 10K ns t RP RAS Precharge Time 20 — 40 — ns tCAS CAS Pulse Width 6 10K 10 10K ns t CP CAS Precharge Time 5 — 10 — ns t CSH CAS Hold Time 35 — 60 — ns t RCD RAS to CAS Delay Time 11 28 20 45 ns tASR Row-Address Setup Time 0 — 0 — ns t RAH Row-Address Hold Time 6 — 10 — ns tASC Column-Address Setup Time(20) 0 — 0 — ns t CAH Column-Address Hold Time(20) 6 — 10 — ns t AR Column-Address Hold Time (referenced to RAS) 30 — 40 — ns t RAD RAS to Column-Address Delay Time(11) 10 20 15 30 ns t RAL Column-Address to RAS Lead Time 18 — 30 — ns t RPC RAS to CAS Precharge Time 0 — 0 — ns t RSH RAS Hold Time 8 — 115 — ns tCLZ CAS to Output in Low-Z 3 — 3 — ns t CRP CAS to RAS Precharge Time(21) 5 — 5 — ns 3 12 3 12 ns 0 10 — 15 ns tOD (26) (9, 25) (21) (10, 20) (27) (15, 29) Output Disable Time (19, 28, 29) (15, 16) tOE / tOEA Output Enable Time tOEHC OE HIGH Hold Time from CAS HIGH 10 — 10 — ns tOEP OE HIGH Pulse Width 10 — 10 — ns tOES OE LOW to CAS HIGH Setup Time 5 — 5 — ns (17, 20) t RCS Read Command Setup Time 0 — 0 — ns t RRH Read Command Hold Time (referenced to RAS)(12) 0 — 0 — ns t RCH Read Command Hold Time (referenced to CAS)(12, 17, 21) 0 — 0 — ns t WCH Write Command Hold Time(17, 27) 5 — 10 — ns t WCR Write Command Hold Time (referenced to RAS)(17) 30 — 50 — ns Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION 09/10/01 Rev. 00A 7 IS41C4100 IS41LV4100 ISSI ® AC CHARACTERISTICS (Continued)(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) -35 Symbol (17) Min. Max. Min. Max. Units tWP Write Command Pulse Width 5 — 10 — ns tWPZ WE Pulse Widths to Disable Outputs 10 — 10 — ns t RWL Write Command to RAS Lead Time(17) 8 — 15 — ns t CWL Write Command to CAS Lead Time(17, 21) 8 — 15 — ns 0 — 0 — ns (14, 17, 20) tWCS Write Command Setup Time t DHR Data-in Hold Time (referenced to RAS) Precharge during WRITE Cycle 30 — 40 — ns tOEH OE Hold Time from WE during READ-MODIFY-WRITE cycle(18) 8 — 15 — ns t DS Data-In Setup Time(15, 22) 0 — 0 — ns 6 — 10 — ns (15, 22) t DH Data-In Hold Time t RWC READ-MODIFY-WRITE Cycle Time 80 — 140 — ns t RWD RAS to WE Delay Time during READ-MODIFY-WRITE Cycle(14) 45 — 80 — ns t CWD CAS to WE Delay Time(14, 20) 25 — 36 — ns tAWD Column-Address to WE Delay Time 30 — 49 — ns t PC EDO Page Mode READ or WRITE Cycle Time(24) 12 — 25 — ns t RASP RAS Pulse Width in EDO Page Mode 35 100K 60 100K ns t CPA Access Time from CAS Precharge(15) — 21 — 34 ns t PRWC EDO Page Mode READ-WRITE Cycle Time(24) 40 — 56 — ns tCOH /tDOH Data Output Hold after CAS LOW 5 — 5 — ns tOFF Output Buffer Turn-Off Delay from CAS or RAS(13,15,19, 29) 3 15 3 15 ns tWHZ Output Disable Delay from WE 3 15 3 15 ns t CLCH Last CAS going LOW to First CAS returning HIGH(23) 10 — 10 — ns t CSR CAS Setup Time (CBR REFRESH)(30, 20) 8 — 10 — ns t CHR CAS Hold Time (CBR REFRESH)(30, 21) 8 — 10 — ns t ORD OE Setup Time prior to RAS during HIDDEN REFRESH Cycle 0 — 0 — ns tREF Refresh Period (1024 Cycles) — 16 — 16 ms 1 50 1 50 ns tT 8 Parameter -60 (14) Transition Time (Rise or Fall) (2, 3) Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION Rev. 00A 09/10/01 IS41C4100 IS41LV4100 ISSI ® Notes: 1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH and VIL (or between VIL and VIH) and assume to be 1 ns for all inputs. 3. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 4. If CAS and RAS = VIH, data output is High-Z. 5. If CAS = VIL, data output may contain data from the last valid READ cycle. 6. Measured with a load equivalent to one TTL gate and 50 pF. 7. Assumes that tRCD - tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase by the amount that tRCD exceeds the value shown. 8. Assumes that tRCD • tRCD (MAX). 9. If CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the data output buffer, CAS and RAS must be pulsed for tCP. 10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD is greater than the specified tRCD (MAX) limit, access time is controlled exclusively by tCAC. 11. Operation within the tRAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD is greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA. 12. Either tRCH or tRRH must be satisfied for a READ cycle. 13. tOFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. 14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS • tWCS (MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD • tRWD (MIN), tAWD • tAWD (MIN) and tCWD • tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back to VIH) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled) cycle. 15. Output parameter (I/O) is referenced to corresponding CAS input, I/O0-I/O7 by LCAS and I/O8-I/O15 by UCAS. 16. During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a LATE WRITE or READ-MODIFY-WRITE is not possible. 17. Write command is defined as WE going low. 18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE HIGH during WRITE cycle) in order to ensure that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS remains LOW and OE is taken back to LOW after tOEH is met. 19. The I/Os are in open during READ cycles once tOD or tOFF occur. 20. The first χCAS edge to transition LOW. 21. The last χCAS edge to transition HIGH. 22. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READ-MODIFY-WRITE cycles. 23. Last falling χCAS edge to first rising χCAS edge. 24. Last rising χCAS edge to next cycle’s last rising χCAS edge. 25. Last rising χCAS edge to first falling χCAS edge. 26. Each χCAS must meet minimum pulse width. 27. Last χCAS to go LOW. 28. I/Os controlled, regardless UCAS and LCAS. 29. The 3 ns minimum is a parameter guaranteed by design. 30. Enables on-chip refresh and address counters. Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION 09/10/01 Rev. 00A 9 IS41C4100 IS41LV4100 ISSI ® AC WAVEFORMS READ CYCLE tRC tRAS tRP RAS tCSH tCRP tRSH tCAS tCLCH tRCD tRRH CAS tAR tRAD tASR ADDRESS tRAH tRAL tCAH tASC Row Column Row tRCS tRCH WE tAA tRAC tCAC tCLC I/O tOFF(1) Open Open Valid Data tOE tOD OE tOES Don't Care Note: 1. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last. 10 Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION Rev. 00A 09/10/01 IS41C4100 IS41LV4100 ISSI ® EARLY WRITE CYCLE (OE = DON'T CARE) tRC tRAS tRP RAS tCSH tCRP tRSH tCAS tCLCH tRCD CAS tAR tRAD tASR ADDRESS tRAH tRAL tCAH tACH tASC Row Column Row tCWL tRWL tWCR tWCS tWCH tWP WE tDHR tDS I/O tDH Valid Data Don't Care Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION 09/10/01 Rev. 00A 11 IS41C4100 IS41LV4100 ISSI ® READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles) tRWC tRAS tRP RAS tCSH tCRP tRSH tCAS tCLCH tRCD CAS tAR tRAD tRAH tASR tRAL tCAH tASC tACH ADDRESS Row Column Row tRWD tCWL tRWL tCWD tAWD tRCS tWP WE tAA tRAC tCAC tCLZ I/O tDS Open Valid DOUT tOE tOD tDH Valid DIN Open tOEH OE Don't Care 12 Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION Rev. 00A 09/10/01 IS41C4100 IS41LV4100 ISSI ® EDO-PAGE-MODE READ CYCLE tRASP tRP RAS tCSH tCRP tCAS, tCLCH tRCD tPC(1) tCAS, tCP tCLCH tRSH tCP tCAS, tCLCH tCP CAS tAR tRAD tASR tASC ADDRESS tCAH tASC Row Column tRAL tCAH tCAH tASC Column Column Row tRAH tRRH tRCS tRCH WE tAA tRAC tCAC tCLZ I/O Open tAA tCPA tCAC tCOH Valid Data tOE tOES tAA tCPA tCAC tCLZ tOFF Valid Data tOEHC Valid Data Open tOE tOD tOES tOD OE tOEP Don't Care Note: 1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the tPC specifications. Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION 09/10/01 Rev. 00A 13 IS41C4100 IS41LV4100 ISSI ® EDO-PAGE-MODE EARLY-WRITE CYCLE tRASP tRP RAS tCSH tCRP tPC tCAS, tCLCH tRCD tCAS, tCLCH tCP tCP tRSH tCAS, tCLCH tCP CAS tAR tACH tCAH tASC tRAD tASR ADDRESS tASC Row Column tRAH tACH tRAL tCAH tACH tCAH tASC Column tCWL Column tCWL tWCS tWCS tWCH tWP Row tCWL tWCS tWCH tWCH tWP tWP WE tWCR tDHR tRWL tDS tDS tDH I/O Valid Data tDS tDH Valid Data tDH Valid Data OE Don't Care 14 Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION Rev. 00A 09/10/01 IS41C4100 IS41LV4100 ISSI ® EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY WRITE Cycles) tRASP tRP RAS tCSH tCRP tCAS, tCLCH tRCD tCP tPC / tPRWC(1) tCAS, tCLCH tRSH tCAS, tCLCH tCP tCP CAS tAR tRAD tASC tASR tRAH ADDRESS tCAH Row tASC tCAH Column tRWD tRCS tRAL tCAH tASC Column tCWL tWP Column tRWL tCWL tWP tCWL tWP tAWD tCWD Row tAWD tCWD tAWD tCWD WE tAA tAA tCPA tDH tDS tRAC tCAC tCLZ I/O Open tAA tCPA tDH tDS tCAC tCLZ DOUT DIN DOUT tOD tOE DIN DOUT tOD tOE tDH tDS tCAC tCLZ Open DIN tOD tOE tOEH OE Don't Care Note: 1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the tPC specifications. Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION 09/10/01 Rev. 00A 15 IS41C4100 IS41LV4100 ISSI ® EDO-PAGE-MODE READ-EARLY-WRITE CYCLE (Psuedo READ-MODIFY WRITE) tRASP tRP RAS tCSH tPC tPC tCRP tCAS tRCD tCAS tCP tRSH tCAS tCP tCP CAS tASR tRAH ADDRESS tAR tRAD tASC Row tCAH tASC tCAH Column (A) tASC Column (B) tRCS tACH tRAL tCAH Column (N) Row tRCH tWCS tWCH WE tAA tRAC tCAC tCPA tCAC tAA tWHZ tCOH I/O Open Valid Data (A) tDS Valid Data (B) tDH DIN Open tOE OE Don't Care 16 Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION Rev. 00A 09/10/01 IS41C4100 IS41LV4100 ISSI ® READ CYCLE (With WE-Controlled Disable) RAS tCSH tCRP tRCD tCP tCAS CAS tAR tRAD tRAH tASR ADDRESS tCAH tASC Row tASC Column Column tRCS tRCH tRCS WE tAA tRAC tCAC tCLZ Open I/O tWHZ tCLZ Valid Data Open tOE tOD OE Don't Care RAS-ONLY REFRESH CYCLE (OE, WE = DON'T CARE) tRC tRAS tRP RAS tCRP tRPC CAS tASR ADDRESS tRAH Row Row Open I/O Don't Care Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION 09/10/01 Rev. 00A 17 IS41C4100 IS41LV4100 ISSI ® CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE) tRP tRAS tRP tRAS RAS tRPC tCP tCHR tCHR tRPC tCSR tCSR CAS Open I/O HIDDEN REFRESH CYCLE (WE = HIGH; OE = LOW)(1) tRAS tRP tRAS RAS tCRP tRCD tRSH tCHR CAS tAR tRAD tRAH tASC tASR ADDRESS Row tRAL tCAH Column tAA tRAC tOFF(2) tCAC tCLZ I/O Open Valid Data tOE Open tOD tORD OE Don't Care Notes: 1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH. 2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last. 18 Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION Rev. 00A 09/10/01 IS41C4100 IS41LV4100 ISSI ORDERING INFORMATION : 5V Commercial Range: 0⋅⋅ C to 70⋅⋅ C Speed (ns) Order Part No. 35 60 IS41C4100-35J IS41C4100-60J Package 20-pin, 300-mil SOJ 20-pin, 300-mil SOJ ORDERING INFORMATION : 5V Industrail Range: -40⋅⋅ C to 85⋅⋅ C Speed (ns) Order Part No. 60 IS41C4100-60JI Package 20-pin, 300-mil SOJ ® ORDERING INFORMATION : 3.3V Commercial Range: 0⋅⋅ C to 70⋅⋅ C Speed (ns) Order Part No. 35 60 Package IS41LV4100-35J IS41LV4100-60J 20-pin, 300-mil SOJ 20-pin, 300-mil SOJ ORDERING INFORMATION : 3.3V Industrail Range: -40⋅⋅ C to 85⋅⋅ C Speed (ns) Order Part No. 60 Package IS41LV4100-60JI 20-pin, 300-mil SOJ ISSI ® Integrated Silicon Solution, Inc. 2231 Lawson Lane Santa Clara, CA 95054 Tel: 1-800-379-4774 Fax: (408) 588-0806 E-mail: [email protected] www.issi.com Integrated Silicon Solution, Inc. — 1-800-379-4774 PRELIMINARY INFORMATION 09/10/01 Rev. 00A 19