CS 300 Phase Control Thyristors VRRM = 1200-1800 V IT(RMS) = 600 A IT(AV)M = 380 A 3 2 VRSM VDSM VRRM VDRM V V 1300 1700 1900 1200 1600 1800 4 Type 1 2 4 3 CS 300-12io3 CS 300-16io3 CS 300-18io3 Not for new application Symbol Test Conditions IT(RMS) IT(AV)M TVJ = TVJM Tcase = 85°C; 180° sine Tcase = 75°C; 180° sine ITSM TVJ = 45°C; VR = 0 1 Maximum Ratings 600 330 380 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 8500 9000 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 8000 8500 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 360 000 340 000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 320 000 303 500 A2s A2s TVJ = TVJM repetitive, IT = 1000 A f = 50 Hz, tP =200 µs VD = 2/3 VDRM IG = 1 A non repetitive, IT = IT(AV)M diG/dt = 1 A/µs 100 A/µs 1 = Anode, 2 = Cathode, 3 = Gate, 4 = Auxiliary Cathode Features Thyristor for line frequencies International flat base package Planar glassivated chip Long-term stability of blocking currents and voltages ● ● ● ● I2t (di/dt)cr (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) PGM TVJ = TVJM IT = IT(AV)M 500 A/µs 120 10 W W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 °C °C °C Md Mounting torque Weight ● ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling ● ● V/µs 30 µs 10 ms ● ● 1000 tP = tP = Applications Motor control Power converter AC power controller 3.5 31 Nm lb.in. 500 g Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 1999 IXYS All rights reserved 1-3 CS 300 Symbol Test Conditions Characteristic Values IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM ≤ 40 VT IT ≤ 1.43 V VT0 rT For power-loss calculations only (TVJ = 125°C) 1.0 0.43 V mΩ VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; IL = 1000 A; TVJ = 25°C mA TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C ≤ ≤ ≤ ≤ 2.0 2.8 150 250 V V mA mA VD = 2/3 VDRM ≤ ≤ 0.2 1 V mA TVJ = 25°C; tP = 10 µs IG = 0.7 A; diG/dt = 0.7 A/µs ≤ 100 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ ≤ 100 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.7 A; diG/dt = 0.7 A/µs ≤ 2 µs tq TVJ = TVJM; IT =330 A, tP = 300 µs; di/dt = -20 A/µs typ. VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM 150 µs RthJC RthJH DC current DC current 0.09 0.12 K/W K/W dS dA a Creepage distance on surface Strike distance through air Max. acceleration, 50 Hz 1.55 1.55 50 mm mm m/s2 4 102 V µs 1250 A 1000 VG 3 tgd B 101 750 C IGT: TVJ= 0°C IGT: TVJ= 25°C B 1 IGT: TVJ= -40°C B 2 a b IT TVJ= 125°C TVJ= 25°C a 100 500 b 250 A IGD: TVJ= 25°C IGD: TVJ=125°C 0 0 100 200 300 400 mA500 IG Fig. 1 Gate voltage and gate current Triggering: A = no; B = possible; C = safe © 1999 IXYS All rights reserved 10-1 10-2 10-1 100 IG A 101 Fig. 2 Gate controlled delay time tgd a = limit; b = typical 0 0.0 0.5 1.0 1.5 VT V 2.0 Fig. 3 On-state characteristics a = typical; b = limit 2-3 CS 300 9000 A 8000 500 A VR = 0 V 400 TVJ = 45°C TVJ = 125°C 7000 ITSM IT(AV)M 6000 300 5000 200 4000 3000 100 2000 1000 10-3 0 10-2 10-1 100 s 101 0 50 100 t Fig. 4 Surge overload current ITSM: crest value, t: duration °C 62 W 700 71 600 Fig. 5 Maximum forward current at case temperature 180° sine RthCA = 0.03 K/W+RthHA RthCA : 0.07 K/W 0.12 K/W 0.165 K/W 0.28 K/W 0.85 k/W PT 80 500 89 400 98 300 107 Tc 200 116 100 125 0 °C 150 Tcase W 700 600 500 PT 400 300 DC 180° sin 120° sin 90° sin 60° sin 30° sin 0 100 200 300 400 500 A IT(AV)M 200 100 0 600 20 40 60 0 80 100 120 140°C Tamb Fig. 6 Power dissipation versus on-state current and ambient temperature (sinusoidal current) °C 62 W 700 71 600 RthCA = 0.03 K/W+RthHA W 700 RthCA : 600 0.07 K/W 0.12 K/W PT 0.165 K/W - K 25 (S) 500 0.28 K/W 0.85 k/W - K 25 (S) PT 80 500 89 400 98 300 107 Tc 200 116 100 125 0 400 300 DC 180° 120° 90° 60° 30° 0 100 200 300 400 500 A IT(AV)M 200 100 0 600 20 40 60 0 80 100 120 140°C Tamb Fig. 7 Power dissipation versus on-state current and ambient temperature (rectangular current) © 1999 IXYS All rights reserved 3-3