IXYS DSI35

DS 35
DSA 35
VRRM = 800-1800 V
IF(RMS) = 80 A
IF(AV)M = 49 A
Rectifier Diode
Avalanche Diode
VRSM
V(BR)minÿ① VRRM
Anode
Cathode
on stud
on stud
V
V
V
900
1300
-
800
1200
DS 35-08A
DS 35-12A
DSI 35-08A
DSI 35-12A
1300
1700
1900
1300
1750
1950
1200
1600
1800
DSA 35-12A
DSA 35-16A
DSA 35-18A
DSAI 35-12A
DSAI 35-16A
DSAI 35-18A
DO-203 AB
C
A
DS
DSA
A = Anode
Symbol
Test Conditions
IF(RMS)
IF(AVM)
TVJ = TVJM
Tcase = 100°C; 180° sine
80
49
A
A
PRSM
DSA(I) types, TVJ = TVJM, tp = 10 ms
11
kW
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
650
690
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
600
640
A
A
2
It
C
DSI
DSAI
C = Cathode
Maximum Ratings
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2100
2000
As
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1800
1700
A2s
A2s
-40...+180
180
-40...+180
°C
°C
°C
Mounting torque
4.5-5.5
40-49
15
Weight
Nm
lb.in.
g
Symbol
Test Conditions
IR
TVJ = TVJM; VR = VRRM
£
4
VF
IF
£
1.55
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.85
4.5
V
mW
RthJC
RthJH
DC current
DC current
1.05
1.25
K/W
K/W
dS
dA
a
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
4.05
3.9
100
mm
mm
m/s2
= 150 A; TVJ = 25°C
Features
International standard package,
JEDEC DO-203 AB (DO-5)
Planar glassivated chips
●
TVJ = 45°C
VR = 0
TVJ
TVJM
Tstg
Md
A
1/4-28UNF
① Only for Avalanche Diodes
2
DSI 35
DSAI 35
●
Applications
High power rectifiers
Field supply for DC motors
Power supplies
●
●
●
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
●
●
●
●
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
mA
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-2
DS 35
DSA 35
1000
250
A
900
A
typ.
DSI 35
DSAI 35
10000
50Hz, 80% VRRM
VR = 0 V
8000
A2s
lim.
800
200
IF
6000
I2t
700
IFSM
4000
600
150
TVJ= 180°C
TVJ= 25°C
TVJ = 45°C
500
400
100
TVJ = 180°C
300
2000
TVJ = 45°C
200
50
TVJ = 180°C
100
0
0.5
1.0
1000
0
10-3
2.0 V
1.5
VF
Fig. 1 Forward characteristics
10-2
10-1
t
s
100
1
2
3
4
5 6 7 ms
8 910
t
Fig. 3 I2t versus time (1-10 ms)
Fig. 2 Surge overload current
IFSM: crest value, t: duration
60
100
A
W
RthJA :
80
50
1.5 K/W
PF
IF(AV)M
1.9 K/W
60
40
2.3 K/W
30
3.9 K/W
40
DC
180° sin
120°
60°
30°
20
20
10
0
0
0
20
40
60
80 A
00
50
IF(AV)M
150 °C 200
100
0
40
80
120
Tamb
Fig. 4 Power dissipation versus forward current and ambient temperature
160 °C 200
Tcase
Fig. 5 Max. forward current at case
temperature 180° sine
2.0
K/W
RthJH for various conduction angles d:
1.6
ZthJH
1.2
0.8
d
RthJH (K/W)
DC
180°
120°
60°
30°
1.25
1.37
1.47
1.74
2.08
Constants for ZthJH calculation:
0.4
0.0
10-3
i
10-2
10-1
100
s
101
t
Fig. 6 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
102
1
2
3
4
Rthi (K/W)
ti (s)
0.10
0.25
0.70
0.20
0.0012
0.1181
0.6540
2.0
2-2