IXYS CS29

CS 29
ADVANCE TECHNICAL INFORMATION
VRRM
IT(RMS)
IT(AV)M
Phase Control Thyristor
ISOPLUS220TM
= 800 - 1200 V
= 35 A
= 23 A
Electrically Isolated Back Surface
VRSM
VDSM
VRRM
VDRM
V
V
800
1200
ISOPLUS220TM
Type
A
C
1
2
800
1200
CS 29-08io1C
CS 29-12io1C
3
G
Isolated back surface *
* Patent pending
Symbol
Test Conditions
IT(RMS)
IT(AV)M
TVJ = TVJM
TC = 95°C; 180° sine (IT(RMS) current limit)
ITSM
TVJ = 45°C;
VR = 0 V
I2t
(di/dt)cr
(dv/dt)cr
Maximum Ratings
35
23
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
215
A
A
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
175
185
A
A
TVJ = 45°C
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
195
A2s
A2s
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
155
145
A2s
A2s
TVJ = TVJM
repetitive, IT = 40 A
f = 50 Hz, tP =200 µs
VD = 2/3 VDRM
IG = 0.2 A
non repetitive, IT = IT(AV)M
diG/dt = 0.2 A/µs
150
A/µs
l
l
l
l
l
TVJ = TVJM;
VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
TVJ = TVJM
IT = IT(AV)M
Features
l
500
A/µs
1000
V/µs
l
tP = 30 µs
tP = 300 µs
PGAV
W
W
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
2500
V~
260
°C
VISOL
50/60 Hz RMS; IISOL ≤ 1 mA
TL
1.6mm from case; 10s
FC
Mounting force
11...65 / 2.4...11
Weight
2
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode-to-tab capacitance (15pF
typical)
Planar passivated chips
Epoxy meets UL 94V-0
High performance glass
passivated chip
Long-term stability of leakage
current and blocking voltage
Applications
l
5
2.5
0.5
PGM
Features
l
l
l
Motor control
Power converter
AC power controller
Light and temperature control
SCR for inrush current limiting
in power supplies or AC drive
Advantages
l
l
Space and weight savings
Simple mounting
N / lb
g
See CS 29..io1 data sheet for electrical characteristic curves.
IXYS reserves the right to change limits, conditions and dimensions.
98839 (5/01)
© 2001 IXYS All rights reserved
CS 29
Symbol
Test Conditions
Characteristic Values
IR, ID
TVJ = TVJM; VR = VRRM; VD = VDRM
≤
2
VT
IT
≤
1.5
V
VT0
rT
For power-loss calculations only (TVJ = 125°C)
0.82
16.5
V
mΩ
VGT
VD = 6 V;
IGT
VD = 6 V;
VGD
IGD
TVJ = TVJM;
IL
= 45 A; TVJ = 25°C
mA
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
≤
≤
≤
≤
1.0
1.2
65
80
V
V
mA
mA
VD = 2/3 VDRM
≤
≤
0.2
5
V
mA
TVJ = 25°C; tP = 10 µs
IG = 0.2; diG/dt = 0.2 A/µs
≤
150
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
≤
50
mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.2 A; diG/dt =0.2 A/µs
≤
2
µs
RthJC
RthCK
DC current
DC current
typical
1.2
0.6
K/W
K/W
a
Max. acceleration, 50 Hz
50
m/s2
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Cathode
2 - Anode
3 - Gate
98....