DSSK 80-0045B IFAV = VRRM= VF = Power Schottky Rectifier with common cathode VRSM VRRM V V 45 45 2x40 A 45 V 0.45 V TO-247 AD Type D2 A DSSK 80-0045B C A A C A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 125°C; rectangular, d = 0.5 TC = 125°C; rectangular, d = 0.5; per device IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAS = 20 A; L = 180 µH; TVJ = 25°C; non repetitive IAR VA =1.5 • VRRM typ.; f=10 kHz; repetitive (dv/dt)cr 70 40 80 A A A 600 A 57 mJ 2 A 1000 TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical Symbol Conditions V/µs -55...+150 150 -55...+150 °C °C °C 155 W 0.8...1.2 6 Nm g Characteristic Values typ. max. IR TVJ = 25°C VR = VRRM TVJ = 100°C VR = VRRM 30 250 mA mA VF IF = 40 A; IF = 40 A; IF = 80 A; 0.45 0.51 0.69 V V V 0.8 K/W K/W TVJ = 125°C TVJ = 25°C TVJ = 125°C RthJC RthCH 0.25 Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see pages D2 - 87-88 IXYS reserves the right to change limits, Conditions and dimensions. © 2002 IXYS All rights reserved 232 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSSK 80-0045B 100 10000 10000 mA A pF 1000 TVJ=150 C IR IF CT 125 C 100 100 C 10 10 TVJ = 150 C 125 C 25 C 1 1000 75 C 50 C 25 C 1 0.0 0.2 0.6 V 0.4 0 10 20 30 Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 45 W 40 80 A 70 d=0.5 DC 25 d= DC 0.5 0.33 0.25 0.17 0.08 20 15 20 10 10 5 0 40 80 0 120 C 160 10 20 30 TC Fig. 4 Average forward current IF(AV) versus case temperature TC 40 V Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 1000 0 0 30 VR A 40 30 20 IFSM 30 50 10 10000 35 P(AV) 60 IF(AV) 0 40 V 50 VR VF Fig. 1 Maximum forward voltage drop characteristics TVJ= 25 C 100 0.1 40 50 IF(AV) 60 A 100 10 100 1000 tP s 10000 Fig. 5 Forward power loss characteristics 1 K/W ZthJC D=0.5 0.33 0.25 0.17 Single Pulse 0.08 0.1 0.05 0.001 DSSK 80-0045B 0.01 0.1 1s 10 t Note: All curves are per diode 232 Fig. 6 Transient thermal impedance junction to case at various duty cycles 2-2 © 2002 IXYS All rights reserved